FR2781317B1 - Source de tension de basse impedance - Google Patents

Source de tension de basse impedance

Info

Publication number
FR2781317B1
FR2781317B1 FR9809318A FR9809318A FR2781317B1 FR 2781317 B1 FR2781317 B1 FR 2781317B1 FR 9809318 A FR9809318 A FR 9809318A FR 9809318 A FR9809318 A FR 9809318A FR 2781317 B1 FR2781317 B1 FR 2781317B1
Authority
FR
France
Prior art keywords
voltage source
low impedance
impedance voltage
low
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9809318A
Other languages
English (en)
Other versions
FR2781317A1 (fr
Inventor
Laurent Savelli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR9809318A priority Critical patent/FR2781317B1/fr
Priority to US09/353,345 priority patent/US20020024379A1/en
Publication of FR2781317A1 publication Critical patent/FR2781317A1/fr
Application granted granted Critical
Publication of FR2781317B1 publication Critical patent/FR2781317B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
FR9809318A 1998-07-17 1998-07-17 Source de tension de basse impedance Expired - Fee Related FR2781317B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9809318A FR2781317B1 (fr) 1998-07-17 1998-07-17 Source de tension de basse impedance
US09/353,345 US20020024379A1 (en) 1998-07-17 1999-07-15 Low impedance voltage source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9809318A FR2781317B1 (fr) 1998-07-17 1998-07-17 Source de tension de basse impedance

Publications (2)

Publication Number Publication Date
FR2781317A1 FR2781317A1 (fr) 2000-01-21
FR2781317B1 true FR2781317B1 (fr) 2005-08-26

Family

ID=9528867

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9809318A Expired - Fee Related FR2781317B1 (fr) 1998-07-17 1998-07-17 Source de tension de basse impedance

Country Status (2)

Country Link
US (1) US20020024379A1 (fr)
FR (1) FR2781317B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2806489B1 (fr) 2000-03-15 2002-06-28 St Microelectronics Sa Circuit de fourniture de tension de reference
US11024373B2 (en) * 2019-09-12 2021-06-01 Hefei Reliance Memory Limited Voltage-mode bit line precharge for random-access memory cells

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663584B1 (en) * 1985-06-10 1996-05-21 Toshiba Kk Intermediate potential generation circuit
JP2509596B2 (ja) * 1987-01-14 1996-06-19 株式会社東芝 中間電位生成回路
JP3114391B2 (ja) * 1992-10-14 2000-12-04 三菱電機株式会社 中間電圧発生回路
JP3038094B2 (ja) * 1992-12-24 2000-05-08 三菱電機株式会社 半導体集積回路装置の出力回路

Also Published As

Publication number Publication date
FR2781317A1 (fr) 2000-01-21
US20020024379A1 (en) 2002-02-28

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20080331