FR2806489B1 - Circuit de fourniture de tension de reference - Google Patents
Circuit de fourniture de tension de referenceInfo
- Publication number
- FR2806489B1 FR2806489B1 FR0003320A FR0003320A FR2806489B1 FR 2806489 B1 FR2806489 B1 FR 2806489B1 FR 0003320 A FR0003320 A FR 0003320A FR 0003320 A FR0003320 A FR 0003320A FR 2806489 B1 FR2806489 B1 FR 2806489B1
- Authority
- FR
- France
- Prior art keywords
- reference voltage
- supply circuit
- voltage supply
- circuit
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
- G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
- G05F3/227—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the supply voltage
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Amplifiers (AREA)
- Control Of Electrical Variables (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0003320A FR2806489B1 (fr) | 2000-03-15 | 2000-03-15 | Circuit de fourniture de tension de reference |
US09/808,733 US6407624B2 (en) | 2000-03-15 | 2001-03-14 | Circuit for providing a reference voltage |
EP01410026A EP1143320A1 (fr) | 2000-03-15 | 2001-03-14 | Circuit de fourniture de tension de référence |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0003320A FR2806489B1 (fr) | 2000-03-15 | 2000-03-15 | Circuit de fourniture de tension de reference |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2806489A1 FR2806489A1 (fr) | 2001-09-21 |
FR2806489B1 true FR2806489B1 (fr) | 2002-06-28 |
Family
ID=8848120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0003320A Expired - Fee Related FR2806489B1 (fr) | 2000-03-15 | 2000-03-15 | Circuit de fourniture de tension de reference |
Country Status (3)
Country | Link |
---|---|
US (1) | US6407624B2 (fr) |
EP (1) | EP1143320A1 (fr) |
FR (1) | FR2806489B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003124757A (ja) * | 2001-10-16 | 2003-04-25 | Texas Instr Japan Ltd | アーリー効果の影響を低減する方法および装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4859963A (en) * | 1988-05-24 | 1989-08-22 | Maxim Integrated Products | High speed low gain stable amplifier |
JPH03225402A (ja) * | 1990-01-31 | 1991-10-04 | Fujitsu Ltd | 定電圧発生回路 |
FR2718259A1 (fr) * | 1994-03-30 | 1995-10-06 | Philips Composants | Circuit régulateur fournissant une tension indépendante de l'alimentation et de la température. |
US5955874A (en) * | 1994-06-23 | 1999-09-21 | Advanced Micro Devices, Inc. | Supply voltage-independent reference voltage circuit |
FR2781317B1 (fr) * | 1998-07-17 | 2005-08-26 | St Microelectronics Sa | Source de tension de basse impedance |
US6285244B1 (en) * | 1999-10-02 | 2001-09-04 | Texas Instruments Incorporated | Low voltage, VCC incentive, low temperature co-efficient, stable cross-coupled bandgap circuit |
-
2000
- 2000-03-15 FR FR0003320A patent/FR2806489B1/fr not_active Expired - Fee Related
-
2001
- 2001-03-14 EP EP01410026A patent/EP1143320A1/fr not_active Withdrawn
- 2001-03-14 US US09/808,733 patent/US6407624B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1143320A1 (fr) | 2001-10-10 |
FR2806489A1 (fr) | 2001-09-21 |
US6407624B2 (en) | 2002-06-18 |
US20010043115A1 (en) | 2001-11-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20051130 |