DE69227422D1 - Festwertspeicher mit Anti-Sicherungselementen - Google Patents

Festwertspeicher mit Anti-Sicherungselementen

Info

Publication number
DE69227422D1
DE69227422D1 DE69227422T DE69227422T DE69227422D1 DE 69227422 D1 DE69227422 D1 DE 69227422D1 DE 69227422 T DE69227422 T DE 69227422T DE 69227422 T DE69227422 T DE 69227422T DE 69227422 D1 DE69227422 D1 DE 69227422D1
Authority
DE
Germany
Prior art keywords
read
memory
security elements
security
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69227422T
Other languages
English (en)
Other versions
DE69227422T2 (de
Inventor
Tyler A Lowrey
Ruojia Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE69227422D1 publication Critical patent/DE69227422D1/de
Publication of DE69227422T2 publication Critical patent/DE69227422T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
DE69227422T 1991-08-19 1992-08-19 Festwertspeicher mit Anti-Sicherungselementen Expired - Lifetime DE69227422T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/746,824 US5241496A (en) 1991-08-19 1991-08-19 Array of read-only memory cells, eacch of which has a one-time, voltage-programmable antifuse element constructed within a trench shared by a pair of cells

Publications (2)

Publication Number Publication Date
DE69227422D1 true DE69227422D1 (de) 1998-12-03
DE69227422T2 DE69227422T2 (de) 1999-06-10

Family

ID=25002495

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69227422T Expired - Lifetime DE69227422T2 (de) 1991-08-19 1992-08-19 Festwertspeicher mit Anti-Sicherungselementen

Country Status (3)

Country Link
US (2) US5241496A (de)
EP (1) EP0528417B1 (de)
DE (1) DE69227422T2 (de)

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US5272101A (en) * 1990-04-12 1993-12-21 Actel Corporation Electrically programmable antifuse and fabrication processes
US5404029A (en) * 1990-04-12 1995-04-04 Actel Corporation Electrically programmable antifuse element
US5541441A (en) * 1994-10-06 1996-07-30 Actel Corporation Metal to metal antifuse
EP0509631A1 (de) * 1991-04-18 1992-10-21 Actel Corporation Antischmelzsicherungen mit minimalischen Oberflächen
US5241496A (en) * 1991-08-19 1993-08-31 Micron Technology, Inc. Array of read-only memory cells, eacch of which has a one-time, voltage-programmable antifuse element constructed within a trench shared by a pair of cells
EP0558176A1 (de) * 1992-02-26 1993-09-01 Actel Corporation Metall-Metall-Antischmelzsicherung mit verbesserter Diffusionsbarriere-Schicht
US5308795A (en) * 1992-11-04 1994-05-03 Actel Corporation Above via metal-to-metal antifuse
US5301159A (en) * 1993-02-05 1994-04-05 Micron Technology, Inc. Anti-fuse circuit and method wherein the read operation and programming operation are reversed
US5498895A (en) * 1993-07-07 1996-03-12 Actel Corporation Process ESD protection devices for use with antifuses
US5369054A (en) * 1993-07-07 1994-11-29 Actel Corporation Circuits for ESD protection of metal-to-metal antifuses during processing
US5581111A (en) * 1993-07-07 1996-12-03 Actel Corporation Dielectric-polysilicon-dielectric antifuse for field programmable logic applications
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JPH07211873A (ja) * 1994-01-24 1995-08-11 Toshiba Corp アンチフュ−ズ素子
TW278229B (en) * 1994-12-29 1996-06-11 Siemens Ag Fuse structure for an integrated circuit device and method for manufacturing a fuse structure
US5838620A (en) 1995-04-05 1998-11-17 Micron Technology, Inc. Circuit for cancelling and replacing redundant elements
US5592016A (en) * 1995-04-14 1997-01-07 Actel Corporation Antifuse with improved antifuse material
EP0774164A1 (de) * 1995-06-02 1997-05-21 Actel Corporation Antisicherung mit erhöhten wolfram-stiften und herstellungsverfahren
US5986322A (en) * 1995-06-06 1999-11-16 Mccollum; John L. Reduced leakage antifuse structure
US5657293A (en) * 1995-08-23 1997-08-12 Micron Technology, Inc. Integrated circuit memory with back end mode disable
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US5965902A (en) * 1995-09-19 1999-10-12 Micron Technology Method and apparatus for testing of dielectric defects in a packaged semiconductor memory device
US5741720A (en) * 1995-10-04 1998-04-21 Actel Corporation Method of programming an improved metal-to-metal via-type antifuse
US5812468A (en) * 1995-11-28 1998-09-22 Micron Technology, Inc. Programmable device for redundant element cancel in a memory
US5825697A (en) * 1995-12-22 1998-10-20 Micron Technology, Inc. Circuit and method for enabling a function in a multiple memory device module
US6240535B1 (en) 1995-12-22 2001-05-29 Micron Technology, Inc. Device and method for testing integrated circuit dice in an integrated circuit module
US5796746A (en) * 1995-12-22 1998-08-18 Micron Technology, Inc. Device and method for testing integrated circuit dice in an integrated circuit module
US5811869A (en) * 1996-01-04 1998-09-22 Micron Technology, Inc. Laser antifuse using gate capacitor
US5668751A (en) * 1996-08-01 1997-09-16 Micron Technology, Inc. Antifuse programming method and apparatus
US5886392A (en) * 1996-08-08 1999-03-23 Micron Technology, Inc. One-time programmable element having controlled programmed state resistance
US5742555A (en) 1996-08-20 1998-04-21 Micron Technology, Inc. Method of anti-fuse repair
US5724282A (en) * 1996-09-06 1998-03-03 Micron Technology, Inc. System and method for an antifuse bank
US5812477A (en) 1996-10-03 1998-09-22 Micron Technology, Inc. Antifuse detection circuit
US5912579A (en) * 1997-02-06 1999-06-15 Zagar; Paul S. Circuit for cancelling and replacing redundant elements
US5909049A (en) 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
US5949127A (en) 1997-06-06 1999-09-07 Integrated Device Technology, Inc. Electrically programmable interlevel fusible link for integrated circuits
US6055611A (en) * 1997-07-09 2000-04-25 Micron Technology, Inc. Method and apparatus for enabling redundant memory
US5862089A (en) * 1997-08-14 1999-01-19 Micron Technology, Inc. Method and memory device for dynamic cell plate sensing with ac equilibrate
US5926034A (en) * 1997-08-14 1999-07-20 Micron Technology, Inc. Fuse option for multiple logic families on the same die
US5895253A (en) * 1997-08-22 1999-04-20 Micron Technology, Inc. Trench isolation for CMOS devices
US6828230B2 (en) * 1997-09-12 2004-12-07 Micron Technology, Inc. Integrated circuit having conductive paths of different heights formed from the same layer structure and method for forming the same
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US6185473B1 (en) 1998-01-08 2001-02-06 Micron Technology, Inc. Optical pattern transfer tool
US6242304B1 (en) 1998-05-29 2001-06-05 Micron Technology, Inc. Method and structure for textured surfaces in floating gate tunneling oxide devices
US6524941B2 (en) * 1998-06-08 2003-02-25 International Business Machines Corporation Sub-minimum wiring structure
US6222244B1 (en) 1998-06-08 2001-04-24 International Business Machines Corporation Electrically blowable fuse with reduced cross-sectional area
US6549035B1 (en) 1998-09-15 2003-04-15 Actel Corporation High density antifuse based partitioned FPGA architecture
FR2787922B1 (fr) 1998-12-23 2002-06-28 St Microelectronics Sa Cellule memoire a programmation unique en technologie cmos
US6240033B1 (en) 1999-01-11 2001-05-29 Hyundai Electronics Industries Co., Ltd. Antifuse circuitry for post-package DRAM repair
US6229733B1 (en) 1999-03-24 2001-05-08 Texas Instruments Incorporated Non-volatile memory cell for linear mos integrated circuits utilizing fused mosfet gate oxide
KR100322882B1 (ko) * 1999-06-29 2002-02-08 박종섭 3전극 구조의 안티퓨즈 및 그 통합 메모리로직 반도체 소자 제조방법
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US6496053B1 (en) 1999-10-13 2002-12-17 International Business Machines Corporation Corrosion insensitive fusible link using capacitance sensing for semiconductor devices
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US6774439B2 (en) * 2000-02-17 2004-08-10 Kabushiki Kaisha Toshiba Semiconductor device using fuse/anti-fuse system
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JP2002203901A (ja) * 2000-12-27 2002-07-19 Toshiba Microelectronics Corp フューズ回路
ITRM20010516A1 (it) * 2001-08-29 2003-02-28 Micron Technology Inc Architettura a schiera di memorie flash.
US6991970B2 (en) * 2001-08-30 2006-01-31 Micron Technology, Inc. Method and apparatus for circuit completion through the use of ball bonds or other connections during the formation of semiconductor device
FR2840444B1 (fr) * 2002-05-30 2005-04-01 St Microelectronics Sa Dispositif de memoire electriquement programmable de facon irreversible
JP4678760B2 (ja) * 2002-06-21 2011-04-27 マイクロン テクノロジー， インク． メモリセルのアレイ、メモリアレイ、メモリデバイス及び多重状態セルを有するメモリアレイを形成する方法
US6853587B2 (en) * 2002-06-21 2005-02-08 Micron Technology, Inc. Vertical NROM having a storage density of 1 bit per 1F2
US6735108B2 (en) * 2002-07-08 2004-05-11 Micron Technology, Inc. ROM embedded DRAM with anti-fuse programming
US6816427B2 (en) * 2002-11-27 2004-11-09 Novocell Semiconductor, Inc. Method of utilizing a plurality of voltage pulses to program non-volatile memory elements and related embedded memories
US6775197B2 (en) 2002-11-27 2004-08-10 Novocell Semiconductor, Inc. Non-volatile memory element integratable with standard CMOS circuitry and related programming methods and embedded memories
US6775171B2 (en) * 2002-11-27 2004-08-10 Novocell Semiconductor, Inc. Method of utilizing voltage gradients to guide dielectric breakdowns for non-volatile memory elements and related embedded memories
JP2005024665A (ja) * 2003-06-30 2005-01-27 Ricoh Co Ltd 粉体搬送装置、画像形成装置、トナー収容部及びプロセスカートリッジ
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US7095075B2 (en) * 2003-07-01 2006-08-22 Micron Technology, Inc. Apparatus and method for split transistor memory having improved endurance
US6873550B2 (en) * 2003-08-07 2005-03-29 Micron Technology, Inc. Method for programming and erasing an NROM cell
US7085170B2 (en) * 2003-08-07 2006-08-01 Micron Technology, Ind. Method for erasing an NROM cell
US6977412B2 (en) * 2003-09-05 2005-12-20 Micron Technology, Inc. Trench corner effect bidirectional flash memory cell
US6830963B1 (en) * 2003-10-09 2004-12-14 Micron Technology, Inc. Fully depleted silicon-on-insulator CMOS logic
US7184315B2 (en) * 2003-11-04 2007-02-27 Micron Technology, Inc. NROM flash memory with self-aligned structural charge separation
US7202523B2 (en) * 2003-11-17 2007-04-10 Micron Technology, Inc. NROM flash memory devices on ultrathin silicon
US7050330B2 (en) * 2003-12-16 2006-05-23 Micron Technology, Inc. Multi-state NROM device
US7269072B2 (en) * 2003-12-16 2007-09-11 Micron Technology, Inc. NROM memory cell, memory array, related devices and methods
US7241654B2 (en) * 2003-12-17 2007-07-10 Micron Technology, Inc. Vertical NROM NAND flash memory array
US7157769B2 (en) * 2003-12-18 2007-01-02 Micron Technology, Inc. Flash memory having a high-permittivity tunnel dielectric
US6878991B1 (en) 2004-01-30 2005-04-12 Micron Technology, Inc. Vertical device 4F2 EEPROM memory
US7221018B2 (en) * 2004-02-10 2007-05-22 Micron Technology, Inc. NROM flash memory with a high-permittivity gate dielectric
US6952366B2 (en) * 2004-02-10 2005-10-04 Micron Technology, Inc. NROM flash memory cell with integrated DRAM
US7072217B2 (en) * 2004-02-24 2006-07-04 Micron Technology, Inc. Multi-state memory cell with asymmetric charge trapping
US7075146B2 (en) 2004-02-24 2006-07-11 Micron Technology, Inc. 4F2 EEPROM NROM memory arrays with vertical devices
US7102191B2 (en) * 2004-03-24 2006-09-05 Micron Technologies, Inc. Memory device with high dielectric constant gate dielectrics and metal floating gates
US7274068B2 (en) * 2004-05-06 2007-09-25 Micron Technology, Inc. Ballistic direct injection NROM cell on strained silicon structures
US7755162B2 (en) 2004-05-06 2010-07-13 Sidense Corp. Anti-fuse memory cell
EP1743380B1 (de) * 2004-05-06 2016-12-28 Sidense Corp. Antifuse-anordnungsarchitektur mit geteiltem kanal
US7511982B2 (en) * 2004-05-06 2009-03-31 Sidense Corp. High speed OTP sensing scheme
US8767433B2 (en) 2004-05-06 2014-07-01 Sidense Corp. Methods for testing unprogrammed OTP memory
US9123572B2 (en) 2004-05-06 2015-09-01 Sidense Corporation Anti-fuse memory cell
US8735297B2 (en) 2004-05-06 2014-05-27 Sidense Corporation Reverse optical proximity correction method
TWI266417B (en) * 2004-11-09 2006-11-11 Powerchip Semiconductor Corp One-time programmable read only memory and operating method thereof
CN100391002C (zh) * 2005-03-29 2008-05-28 旺宏电子股份有限公司 单次可程序化只读存储器及其制造方法
US7256446B2 (en) * 2005-05-05 2007-08-14 Alpha And Omega Semiconductor, Ltd. One time programmable memory cell
US7805687B2 (en) * 2005-05-05 2010-09-28 Alpha & Omega Semiconductor, Ltd. One-time programmable (OTP) memory cell
US20080029844A1 (en) * 2006-08-03 2008-02-07 Adkisson James W Anti-fuse structure optionally integrated with guard ring structure
CN101154466B (zh) * 2006-09-30 2011-12-21 万国半导体股份有限公司 用于探测三种状态的一次可编程存储器件及其制造方法
JP4249774B2 (ja) * 2006-10-13 2009-04-08 エルピーダメモリ株式会社 半導体装置の製造方法
US7875840B2 (en) * 2006-11-16 2011-01-25 Aptina Imaging Corporation Imager device with anti-fuse pixels and recessed color filter array
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Also Published As

Publication number Publication date
EP0528417A2 (de) 1993-02-24
DE69227422T2 (de) 1999-06-10
US5241496A (en) 1993-08-31
US5331196A (en) 1994-07-19
EP0528417A3 (en) 1995-03-15
EP0528417B1 (de) 1998-10-28

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