DE69121775D1 - Auslöschbare programmierbare Speicheranordnung - Google Patents

Auslöschbare programmierbare Speicheranordnung

Info

Publication number
DE69121775D1
DE69121775D1 DE69121775T DE69121775T DE69121775D1 DE 69121775 D1 DE69121775 D1 DE 69121775D1 DE 69121775 T DE69121775 T DE 69121775T DE 69121775 T DE69121775 T DE 69121775T DE 69121775 D1 DE69121775 D1 DE 69121775D1
Authority
DE
Germany
Prior art keywords
memory array
erasable programmable
programmable memory
erasable
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69121775T
Other languages
English (en)
Other versions
DE69121775T2 (de
Inventor
James L Paterson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69121775D1 publication Critical patent/DE69121775D1/de
Application granted granted Critical
Publication of DE69121775T2 publication Critical patent/DE69121775T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
DE69121775T 1990-06-01 1991-04-30 Auslöschbare programmierbare Speicheranordnung Expired - Fee Related DE69121775T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53198790A 1990-06-01 1990-06-01

Publications (2)

Publication Number Publication Date
DE69121775D1 true DE69121775D1 (de) 1996-10-10
DE69121775T2 DE69121775T2 (de) 1997-01-30

Family

ID=24119930

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69121775T Expired - Fee Related DE69121775T2 (de) 1990-06-01 1991-04-30 Auslöschbare programmierbare Speicheranordnung

Country Status (4)

Country Link
US (1) US5394002A (de)
EP (1) EP0459164B1 (de)
JP (1) JP3288399B2 (de)
DE (1) DE69121775T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5592003A (en) * 1992-12-28 1997-01-07 Nippon Steel Corporation Nonvolatile semiconductor memory and method of rewriting data thereto
JP3397903B2 (ja) * 1994-08-23 2003-04-21 新日本製鐵株式会社 不揮発性半導体記憶装置の製造方法
AUPN236595A0 (en) 1995-04-11 1995-05-11 Rescare Limited Monitoring of apneic arousals
US6291851B1 (en) * 1995-07-21 2001-09-18 Rohm Co., Ltd. Semiconductor device having oxide layers formed with different thicknesses
US6136677A (en) * 1997-09-25 2000-10-24 Siemens Aktiengesellschaft Method of fabricating semiconductor chips with silicide and implanted junctions
US6128232A (en) * 1998-09-21 2000-10-03 Texas Instruments Incorporated Method for erasing a non-volatile memory array
US6438030B1 (en) * 2000-08-15 2002-08-20 Motorola, Inc. Non-volatile memory, method of manufacture, and method of programming
US6774426B2 (en) * 2000-12-19 2004-08-10 Micron Technology, Inc. Flash cell with trench source-line connection
US6933557B2 (en) * 2003-08-11 2005-08-23 Atmel Corporation Fowler-Nordheim block alterable EEPROM memory cell
JP2006054283A (ja) * 2004-08-11 2006-02-23 Nec Electronics Corp 不揮発性半導体記憶装置，及びその製造方法
JP5112731B2 (ja) * 2007-04-04 2013-01-09 ローム株式会社 Ｆｌｏｔｏｘ型ｅｅｐｒｏｍ
US10797064B2 (en) * 2018-09-19 2020-10-06 Ememory Technology Inc. Single-poly non-volatile memory cell and operating method thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590504A (en) * 1982-12-28 1986-05-20 Thomson Components - Mostek Corporation Nonvolatile MOS memory cell with tunneling element
JPS60206072A (ja) * 1984-03-29 1985-10-17 Toshiba Corp 不揮発性半導体メモリ装置
US4750024A (en) * 1986-02-18 1988-06-07 Texas Instruments Incorporated Offset floating gate EPROM memory cell
US4855800A (en) * 1986-03-27 1989-08-08 Texas Instruments Incorporated EPROM with increased floating gate/control gate coupling
US4853895A (en) * 1987-11-30 1989-08-01 Texas Instruments Incorporated EEPROM including programming electrode extending through the control gate electrode
US4924437A (en) * 1987-12-09 1990-05-08 Texas Instruments Incorporated Erasable programmable memory including buried diffusion source/drain lines and erase lines
JP2511485B2 (ja) * 1988-01-12 1996-06-26 沖電気工業株式会社 半導体記憶装置
US5017980A (en) * 1988-07-15 1991-05-21 Texas Instruments Incorporated Electrically-erasable, electrically-programmable read-only memory cell
DE68922004T2 (de) * 1988-02-05 1995-10-12 Texas Instruments Inc Elektrisch löschbare und programmierbare Nur-Lesespeicherzelle.
US4912676A (en) * 1988-08-09 1990-03-27 Texas Instruments, Incorporated Erasable programmable memory

Also Published As

Publication number Publication date
JP3288399B2 (ja) 2002-06-04
US5394002A (en) 1995-02-28
DE69121775T2 (de) 1997-01-30
JPH04230078A (ja) 1992-08-19
EP0459164A3 (en) 1992-05-27
EP0459164A2 (de) 1991-12-04
EP0459164B1 (de) 1996-09-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee