DE69017262D1 - Aktiv-Matrix-Anzeigevorrichtung und Verfahren zu ihrer Herstellung. - Google Patents

Aktiv-Matrix-Anzeigevorrichtung und Verfahren zu ihrer Herstellung.

Info

Publication number
DE69017262D1
DE69017262D1 DE69017262T DE69017262T DE69017262D1 DE 69017262 D1 DE69017262 D1 DE 69017262D1 DE 69017262 T DE69017262 T DE 69017262T DE 69017262 T DE69017262 T DE 69017262T DE 69017262 D1 DE69017262 D1 DE 69017262D1
Authority
DE
Germany
Prior art keywords
production
display device
active matrix
matrix display
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69017262T
Other languages
English (en)
Other versions
DE69017262T2 (de
Inventor
Yasunori Shimada
Hirohisa Tanaka
Hisashi Saito
Hitoshi Ujimasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP13337289A external-priority patent/JPH07113728B2/ja
Priority claimed from JP17080889A external-priority patent/JPH0820641B2/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69017262D1 publication Critical patent/DE69017262D1/de
Publication of DE69017262T2 publication Critical patent/DE69017262T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
DE69017262T 1989-05-26 1990-05-25 Aktiv-Matrix-Anzeigevorrichtung und Verfahren zu ihrer Herstellung. Expired - Fee Related DE69017262T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13337289A JPH07113728B2 (ja) 1989-05-26 1989-05-26 アクティブマトリクス基板
JP17080889A JPH0820641B2 (ja) 1989-06-30 1989-06-30 液晶表示装置の製造方法

Publications (2)

Publication Number Publication Date
DE69017262D1 true DE69017262D1 (de) 1995-04-06
DE69017262T2 DE69017262T2 (de) 1995-09-21

Family

ID=26467747

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69017262T Expired - Fee Related DE69017262T2 (de) 1989-05-26 1990-05-25 Aktiv-Matrix-Anzeigevorrichtung und Verfahren zu ihrer Herstellung.

Country Status (3)

Country Link
US (1) US5162901A (de)
EP (1) EP0399846B1 (de)
DE (1) DE69017262T2 (de)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2662290B1 (fr) * 1990-05-15 1992-07-24 France Telecom Procede de realisation d'un ecran d'affichage a matrice active et a condensateurs de stockage et ecran obtenu par ce procede.
JP2650780B2 (ja) * 1990-11-30 1997-09-03 シャープ株式会社 アクティブマトリクス基板
JP2999271B2 (ja) * 1990-12-10 2000-01-17 株式会社半導体エネルギー研究所 表示装置
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US5521107A (en) * 1991-02-16 1996-05-28 Semiconductor Energy Laboratory Co., Ltd. Method for forming a field-effect transistor including anodic oxidation of the gate
US5854494A (en) * 1991-02-16 1998-12-29 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
JP3556679B2 (ja) 1992-05-29 2004-08-18 株式会社半導体エネルギー研究所 電気光学装置
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
JP2845303B2 (ja) 1991-08-23 1999-01-13 株式会社 半導体エネルギー研究所 半導体装置とその作製方法
US6979840B1 (en) * 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
JP2900662B2 (ja) * 1991-10-18 1999-06-02 三菱電機株式会社 薄膜トランジスタアレイ
US5422293A (en) * 1991-12-24 1995-06-06 Casio Computer Co., Ltd. Method for manufacturing a TFT panel
DE69319760T2 (de) * 1992-02-21 1999-02-11 Toshiba Kawasaki Kk Flüssigkristallanzeigevorrichtung
US5402141A (en) * 1992-03-11 1995-03-28 Honeywell Inc. Multigap liquid crystal color display with reduced image retention and flicker
JP3133140B2 (ja) * 1992-04-01 2001-02-05 株式会社半導体エネルギー研究所 表示装置
JP2814161B2 (ja) 1992-04-28 1998-10-22 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置およびその駆動方法
JP3245959B2 (ja) * 1992-06-05 2002-01-15 松下電器産業株式会社 液晶画像表示装置の製造方法
EP0592063A3 (en) * 1992-09-14 1994-07-13 Toshiba Kk Active matrix liquid crystal display device
US6313889B1 (en) * 1993-03-04 2001-11-06 Samsung Electronics Co., Ltd. Matrix-type display device capable of being repaired in pixel unit
JP3258768B2 (ja) * 1993-06-22 2002-02-18 三菱電機株式会社 マトリックス型表示装置
US5852480A (en) * 1994-03-30 1998-12-22 Nec Corporation LCD panel having a plurality of shunt buses
US6747627B1 (en) 1994-04-22 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Redundancy shift register circuit for driver circuit in active matrix type liquid crystal display device
JP3402400B2 (ja) * 1994-04-22 2003-05-06 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
JP2827920B2 (ja) * 1994-10-13 1998-11-25 松下電器産業株式会社 カラー液晶表示パネル
KR100338480B1 (ko) * 1995-08-19 2003-01-24 엘지.필립스 엘시디 주식회사 액정표시장치및그제조방법
JP3737176B2 (ja) * 1995-12-21 2006-01-18 株式会社半導体エネルギー研究所 液晶表示装置
JP3624596B2 (ja) * 1996-12-09 2005-03-02 ソニー株式会社 画像表示装置
US5892558A (en) * 1997-06-26 1999-04-06 Gl Displays, Inc. Wire electrode structure based on 2 or 3 terminal device employed in a liquid crystal display
US6600157B2 (en) * 2000-06-27 2003-07-29 Canon Kabushiki Kaisha Semiconductor device, and radiation detection device and radiation detection system having same
GB0029315D0 (en) * 2000-12-01 2001-01-17 Koninkl Philips Electronics Nv Method of increasing the conductivity of a transparent conductive layer
JP3909572B2 (ja) * 2001-09-28 2007-04-25 株式会社日立製作所 表示装置
TW594156B (en) * 2002-01-04 2004-06-21 Fujitsu Display Tech Substrate for display device and display device equipped therewith
US8247965B2 (en) * 2003-11-14 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Light emitting display device and method for manufacturing the same
KR101030056B1 (ko) * 2003-11-14 2011-04-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정표시장치 제조방법
US8166649B2 (en) * 2005-12-12 2012-05-01 Nupix, LLC Method of forming an electroded sheet
US8106853B2 (en) * 2005-12-12 2012-01-31 Nupix, LLC Wire-based flat panel displays
US8089434B2 (en) * 2005-12-12 2012-01-03 Nupix, LLC Electroded polymer substrate with embedded wires for an electronic display
JP2009519564A (ja) * 2005-12-12 2009-05-14 モア ビー． チャド ワイヤ式のフラットパネルディスプレイ
US20070132387A1 (en) * 2005-12-12 2007-06-14 Moore Chad B Tubular plasma display
US8441007B2 (en) 2008-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US20100224878A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101900653B1 (ko) 2009-07-10 2018-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
JP5642447B2 (ja) * 2009-08-07 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
KR101746198B1 (ko) 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 전자기기
KR101751908B1 (ko) 2009-10-21 2017-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전압 조정 회로
KR101765849B1 (ko) 2009-12-18 2017-08-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 기기
KR101815838B1 (ko) 2010-01-24 2018-01-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101132119B1 (ko) * 2010-03-10 2012-04-05 삼성모바일디스플레이주식회사 액정표시장치 어레이 기판 및 그 제조방법
US8569754B2 (en) 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2081018B (en) * 1980-07-31 1985-06-26 Suwa Seikosha Kk Active matrix assembly for display device
JPS57115856A (en) * 1981-01-09 1982-07-19 Semiconductor Energy Lab Co Ltd Compound semiconductor device
JPS5821863A (ja) * 1981-07-31 1983-02-08 Seiko Epson Corp 液晶表示装置
JPS58130561A (ja) * 1982-01-29 1983-08-04 Seiko Epson Corp アクテイブマトリクス基板
JPS58159518A (ja) * 1982-03-18 1983-09-21 Seiko Epson Corp 液晶表示パネル
JPS595229A (ja) * 1982-07-01 1984-01-12 Asahi Glass Co Ltd 画像表示装置
JPH06100745B2 (ja) * 1982-07-02 1994-12-12 セイコーエプソン株式会社 アクティブマトリクス型液晶表示装置
JPS5961818A (ja) * 1982-10-01 1984-04-09 Seiko Epson Corp 液晶表示装置
JPS60169828A (ja) * 1984-02-15 1985-09-03 Hitachi Ltd 液晶表示素子の電極基板
JPS60239711A (ja) * 1984-05-14 1985-11-28 Canon Inc トランジスタの駆動法
JPH0646277B2 (ja) * 1984-04-27 1994-06-15 セイコー電子工業株式会社 記憶容量内蔵型液晶表示装置
JPS60230118A (ja) * 1984-04-27 1985-11-15 Seiko Instr & Electronics Ltd 記憶容量内蔵型液晶表示装置
JPS6129820A (ja) * 1984-07-23 1986-02-10 Seiko Instr & Electronics Ltd アクテイプマトリクス表示装置用基板
JPS61151516A (ja) * 1984-12-25 1986-07-10 Seiko Instr & Electronics Ltd Ｍｉｓ型アクテイプマトリクス表示装置用基板
JPS61243430A (ja) * 1985-04-22 1986-10-29 Canon Inc 液晶装置
JPH0685032B2 (ja) * 1985-10-17 1994-10-26 キヤノン株式会社 カイラルスメクティック液晶素子
JPS6290624A (ja) * 1985-10-17 1987-04-25 Asahi Glass Co Ltd 画像表示装置
JPS62227130A (ja) * 1986-03-28 1987-10-06 Nec Corp アクテイブマトリクス型液晶表示装置
JPS62296123A (ja) * 1986-06-17 1987-12-23 Toshiba Corp アクテイブマトリツクス型液晶表示装置
JPS62148929A (ja) * 1986-10-27 1987-07-02 Seiko Epson Corp 液晶表示装置
US4955697A (en) * 1987-04-20 1990-09-11 Hitachi, Ltd. Liquid crystal display device and method of driving the same
JP2566149B2 (ja) * 1987-09-10 1996-12-25 キヤノン株式会社 光学変調素子
JP2568857B2 (ja) * 1987-09-22 1997-01-08 セイコーエプソン株式会社 アクティブマトリックス基板
JPH0827465B2 (ja) * 1988-04-06 1996-03-21 株式会社日立製作所 平面デイスプレイ

Also Published As

Publication number Publication date
EP0399846A3 (de) 1991-07-24
DE69017262T2 (de) 1995-09-21
EP0399846B1 (de) 1995-03-01
EP0399846A2 (de) 1990-11-28
US5162901A (en) 1992-11-10

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