DE69015458T2 - Elektrodenstruktur für III-V-Verbindungshalbleiterbauelement und deren Herstellungsverfahren. - Google Patents

Elektrodenstruktur für III-V-Verbindungshalbleiterbauelement und deren Herstellungsverfahren.

Info

Publication number
DE69015458T2
DE69015458T2 DE69015458T DE69015458T DE69015458T2 DE 69015458 T2 DE69015458 T2 DE 69015458T2 DE 69015458 T DE69015458 T DE 69015458T DE 69015458 T DE69015458 T DE 69015458T DE 69015458 T2 DE69015458 T2 DE 69015458T2
Authority
DE
Germany
Prior art keywords
iii
semiconductor device
manufacturing process
compound semiconductor
electrode structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69015458T
Other languages
English (en)
Other versions
DE69015458D1 (de
Inventor
Takashi C O Osaka Works Yano
Naoyuki Yamabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69015458D1 publication Critical patent/DE69015458D1/de
Publication of DE69015458T2 publication Critical patent/DE69015458T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE69015458T 1989-06-16 1990-06-15 Elektrodenstruktur für III-V-Verbindungshalbleiterbauelement und deren Herstellungsverfahren. Expired - Fee Related DE69015458T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15551689 1989-06-16

Publications (2)

Publication Number Publication Date
DE69015458D1 DE69015458D1 (de) 1995-02-09
DE69015458T2 true DE69015458T2 (de) 1995-08-24

Family

ID=15607765

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69015458T Expired - Fee Related DE69015458T2 (de) 1989-06-16 1990-06-15 Elektrodenstruktur für III-V-Verbindungshalbleiterbauelement und deren Herstellungsverfahren.

Country Status (7)

Country Link
US (1) US5077599A (de)
EP (1) EP0402936B1 (de)
JP (1) JPH0387067A (de)
KR (1) KR940006688B1 (de)
AU (1) AU636616B2 (de)
CA (1) CA2019026C (de)
DE (1) DE69015458T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5160793A (en) * 1991-06-07 1992-11-03 Eastman Kodak Company Shallow ohmic contacts to n-Alx Ga1-x As
JP3115148B2 (ja) * 1993-03-31 2000-12-04 株式会社東芝 半導体装置の製造方法
US5523623A (en) * 1994-03-09 1996-06-04 Matsushita Electric Industrial Co., Ltd. Ohmic electrode for a p-type compound semiconductor and a bipolar transistor incorporating the ohmic electrode
US5646069A (en) * 1995-06-07 1997-07-08 Hughes Aircraft Company Fabrication process for Alx In1-x As/Gay In1-y As power HFET ohmic contacts
JP3022765B2 (ja) * 1996-03-27 2000-03-21 日本電気株式会社 半導体装置及び半導体素子の実装方法
DE60038524D1 (de) * 1999-02-18 2008-05-21 Furukawa Electric Co Ltd Elektrode für halbleiteranordnung und verfahren zum herstellen
KR100376424B1 (ko) * 1999-08-05 2003-03-15 청인산업개발(주) 폐유리를 이용한 보도블럭 시공방법
DE10329364B4 (de) * 2003-06-30 2007-10-11 Osram Opto Semiconductors Gmbh Elektrischer Kontakt für ein optoelekronisches Bauelement und Verfahren zu dessen Herstellung
CN101636820B (zh) * 2007-03-28 2011-09-07 松下电器产业株式会社 欧姆电极结构体及半导体元件
JP5237628B2 (ja) * 2007-12-28 2013-07-17 スタンレー電気株式会社 半導体素子の製造方法
JP2009224499A (ja) * 2008-03-14 2009-10-01 Sumitomo Electric Ind Ltd 電極構造および半導体装置
CN102687247B (zh) * 2009-12-22 2015-01-07 株式会社德山 Ⅲ族氮化物半导体的n型接触电极及其形成方法
US8829567B2 (en) * 2012-12-28 2014-09-09 Sematech, Inc. Metal alloy with an abrupt interface to III-V semiconductor
EP3740966A4 (de) * 2018-01-16 2021-10-27 Princeton Optronics, Inc. Ohmsche kontakte und verfahren zu ihrer herstellung
DE102019006099B4 (de) * 2019-08-29 2022-03-17 Azur Space Solar Power Gmbh Stapelförmige Mehrfachsolarzelle mit einer ein Mehrschichtsystem umfassenden Metallisierung

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654047A (en) * 1979-10-08 1981-05-13 Nec Corp Compound semiconductor device
JPS5713756A (en) * 1980-06-27 1982-01-23 Nec Corp Electrode for semiconductor device
JPS5890773A (ja) * 1982-11-01 1983-05-30 Toshiba Corp 化合物半導体の電極
JPS605559A (ja) * 1983-06-23 1985-01-12 Nec Corp 半導体素子の電極構造
JPS60242619A (ja) * 1984-05-16 1985-12-02 Nippon Telegr & Teleph Corp <Ntt> 半導体オ−ム性電極の形成方法
JPH0658896B2 (ja) * 1984-06-15 1994-08-03 株式会社日立製作所 半導体装置の製造方法
JPS6360526A (ja) * 1986-08-30 1988-03-16 Sharp Corp 半導体装置の製造方法
JPS63252471A (ja) * 1987-04-09 1988-10-19 Toshiba Corp 化合物半導体電極構体

Also Published As

Publication number Publication date
KR940006688B1 (ko) 1994-07-25
AU636616B2 (en) 1993-05-06
EP0402936A3 (de) 1991-05-02
EP0402936A2 (de) 1990-12-19
CA2019026A1 (en) 1990-12-16
JPH0387067A (ja) 1991-04-11
EP0402936B1 (de) 1994-12-28
CA2019026C (en) 1998-01-06
US5077599A (en) 1991-12-31
KR910002000A (ko) 1991-01-31
DE69015458D1 (de) 1995-02-09
AU5713490A (en) 1990-12-20

Similar Documents

Publication Publication Date Title
DE68926033T2 (de) Herstellungsverfahren für Gross-Matrix-Halbleiterbauelemente
KR880701461A (ko) 반도체 소자 제조공정
DE69131762T2 (de) Herstellungsverfahren für Halbleitereinrichtungen
DE69033229T2 (de) Anschlussfläche für Halbleiteranordnung
DE69133497D1 (de) Leiterrahmen für eine Halbleiteranordnung und dessen Herstellungsverfahren
DE59406621D1 (de) Herstellungsverfahren für vertikal kontaktierte halbleiterbauelemente
KR850006258A (ko) 반도체장치 제조방법
KR880004552A (ko) 반도체장치 제조방법
DE69015458D1 (de) Elektrodenstruktur für III-V-Verbindungshalbleiterbauelement und deren Herstellungsverfahren.
DE3381711D1 (de) Halbleiteranordnung und verfahren zu deren herstellung.
IT8422056A0 (it) Substrato semiconduttore e processo di realizzazione dello stesso.
DE68909632D1 (de) Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren.
KR880701457A (ko) 반도체 장치 제조 방법
DE69315125D1 (de) Herstellungsverfahren für Halbleiterbauelement mit Kondensator
KR900012352A (ko) 반도체장치 패키지 및 그 패키지의 제조방법
DE69119463T2 (de) Kontaktierung und deren Herstellungsverfahren für Halbleiterbauelemente
DE69131241D1 (de) Herstellungsverfahren für Halbleiteranordnungen
BR8403468A (pt) Dispositivo com semicondutor de dois terminais e processo para sua fabricacao
DE68925219D1 (de) Halbleiterlaser-Vorrichtung und Herstellungsverfahren für die Halbleiterlaser-Vorrichtung
KR860000710A (ko) 반도체장치 제조방법
DE3855551T2 (de) Halbleiter-Laservorrichtung und deren Herstellungsverfahren
DE69022864D1 (de) Komplementäre Transistorstruktur und deren Herstellungsverfahren.
DE3650186T2 (de) Halbleiteranordnung und Verfahren zu deren Herstellung.
DE69030433D1 (de) Herstellungsmethode für Halbleiterspeicher
DE68926591D1 (de) Mit dem Fermi-Niveau nichtfixierte Oxid-Verbindungshalbleiterstrukturen und Verfahren zu deren Herstellungen

Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee