DE68926019D1 - Positiv arbeitende hochempfindliche Photolack-Zusammensetzung - Google Patents

Positiv arbeitende hochempfindliche Photolack-Zusammensetzung

Info

Publication number
DE68926019D1
DE68926019D1 DE68926019T DE68926019T DE68926019D1 DE 68926019 D1 DE68926019 D1 DE 68926019D1 DE 68926019 T DE68926019 T DE 68926019T DE 68926019 T DE68926019 T DE 68926019T DE 68926019 D1 DE68926019 D1 DE 68926019D1
Authority
DE
Germany
Prior art keywords
highly sensitive
photoresist composition
positive working
sensitive photoresist
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68926019T
Other languages
English (en)
Other versions
DE68926019T2 (de
Inventor
David Paul Merritt
Robert Lavin Wood
Wayne Martin Moreau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23005942&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE68926019(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE68926019D1 publication Critical patent/DE68926019D1/de
Application granted granted Critical
Publication of DE68926019T2 publication Critical patent/DE68926019T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
DE1989626019 1988-10-28 1989-10-10 Positiv arbeitende hochempfindliche Photolack-Zusammensetzung Expired - Fee Related DE68926019T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26440788A 1988-10-28 1988-10-28

Publications (2)

Publication Number Publication Date
DE68926019D1 true DE68926019D1 (de) 1996-04-25
DE68926019T2 DE68926019T2 (de) 1996-10-02

Family

ID=23005942

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1989626019 Expired - Fee Related DE68926019T2 (de) 1988-10-28 1989-10-10 Positiv arbeitende hochempfindliche Photolack-Zusammensetzung

Country Status (4)

Country Link
EP (1) EP0366590B2 (de)
JP (1) JP2839159B2 (de)
CA (1) CA2001384A1 (de)
DE (1) DE68926019T2 (de)

Families Citing this family (62)

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EP0422628A3 (en) * 1989-10-13 1992-02-26 E.I. Du Pont De Nemours And Company Photosensitive element
US5055439A (en) * 1989-12-27 1991-10-08 International Business Machines Corporation Photoacid generating composition and sensitizer therefor
EP0440374B1 (de) * 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemisch verstärktes Photolack-Material
JP2970879B2 (ja) * 1990-01-30 1999-11-02 和光純薬工業株式会社 化学増幅型レジスト材料
EP0440376B1 (de) * 1990-01-30 1996-04-24 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung einer Bildstruktur
JPH0488346A (ja) * 1990-07-31 1992-03-23 Nippon Paint Co Ltd レジスト組成物
EP0476865A1 (de) * 1990-08-31 1992-03-25 Wako Pure Chemical Industries Ltd Resistmaterial und Verfahren zur Herstellung eines Bildes unter Verwendung desselben
JP3030672B2 (ja) * 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
EP0524759A1 (de) * 1991-07-23 1993-01-27 AT&T Corp. Verfahren zur Herstellung einer Vorrichtung
EP0552548B1 (de) * 1991-12-16 1997-03-19 Wako Pure Chemical Industries Ltd Resistmaterial
JP3010607B2 (ja) * 1992-02-25 2000-02-21 ジェイエスアール株式会社 感放射線性樹脂組成物
US5384229A (en) * 1992-05-07 1995-01-24 Shipley Company Inc. Photoimageable compositions for electrodeposition
DE4242050A1 (de) * 1992-12-14 1994-06-16 Hoechst Ag Polymere mit N,N-disubstituierten Sulfonamid-Seitengruppen und deren Verwendung
DE4242051A1 (de) * 1992-12-14 1994-06-16 Hoechst Ag N,N-Disubstituierte Sulfonamide und damit hergestelltes strahlungsempfindliches Gemisch
JPH06214395A (ja) * 1993-01-18 1994-08-05 Sumitomo Chem Co Ltd ポジ型フォトレジスト組成物
EP0608983B1 (de) * 1993-01-25 1997-11-12 AT&T Corp. Ein Verfahren zum gesteuerten Entschützen von Polymeren und Verfahren zur Herstellung einer Vorrichtung welches diese zum Teil entschützten Polymere für Photoresiste benutzt
JP2719748B2 (ja) * 1993-02-08 1998-02-25 信越化学工業株式会社 新規なオニウム塩及びそれを用いたポジ型レジスト材料
CA2131507C (en) * 1993-11-08 1999-11-02 Edwin A. Chandross Resist materials and related processes
EP0659781A3 (de) * 1993-12-21 1995-09-27 Ciba Geigy Ag Maleinimidcopolymere, insbesonder für Photoresists.
US6004720A (en) 1993-12-28 1999-12-21 Fujitsu Limited Radiation sensitive material and method for forming pattern
DE4414896A1 (de) * 1994-04-28 1995-11-02 Hoechst Ag Positiv arbeitendes strahlungempfindliches Gemisch
US5558971A (en) 1994-09-02 1996-09-24 Wako Pure Chemical Industries, Ltd. Resist material
EP0709410A3 (de) * 1994-10-26 1997-03-26 Ocg Microelectronic Materials Polymere
DE4444669A1 (de) 1994-12-15 1996-06-20 Hoechst Ag Strahlungsempfindliches Gemisch
JP3073149B2 (ja) 1995-10-30 2000-08-07 東京応化工業株式会社 ポジ型レジスト組成物
US5879856A (en) 1995-12-05 1999-03-09 Shipley Company, L.L.C. Chemically amplified positive photoresists
DE69628996T2 (de) 1995-12-21 2004-04-22 Wako Pure Chemical Industries, Ltd. Polymerzusammensetzung und Rezistmaterial
JP3591672B2 (ja) 1996-02-05 2004-11-24 富士写真フイルム株式会社 ポジ型感光性組成物
DE69612182T3 (de) 1996-02-09 2005-08-04 Wako Pure Chemical Industries, Ltd. Polymer und Resistmaterial
PL324248A1 (en) 1996-04-23 1998-05-11 Horsell Graphic Ind Ltd Composition sensitive to heat and method of making lithographic formes incorporating such compositions
JP3808140B2 (ja) * 1996-09-10 2006-08-09 Ａｚエレクトロニックマテリアルズ株式会社 新規酸感応性基で保護されたヒドロキシスチレン重合体およびこれらを含む放射線感応性材料
US6117610A (en) * 1997-08-08 2000-09-12 Kodak Polychrome Graphics Llc Infrared-sensitive diazonaphthoquinone imaging composition and element containing non-basic IR absorbing material and methods of use
US6090532A (en) * 1997-03-21 2000-07-18 Kodak Polychrome Graphics Llc Positive-working infrared radiation sensitive composition and printing plate and imaging method
US6063544A (en) * 1997-03-21 2000-05-16 Kodak Polychrome Graphics Llc Positive-working printing plate and method of providing a positive image therefrom using laser imaging
EP1103373A3 (de) 1997-07-05 2001-07-18 Kodak Polychrome Graphics LLC Verfahren zur Bildung eines Musters, und Flachdruckplatten
DE19729067A1 (de) 1997-07-08 1999-01-14 Agfa Gevaert Ag Infrarot-bebilderbares Aufzeichnungsmaterial und daraus hergestellte Offsetdruckplatte
US6077643A (en) * 1997-08-28 2000-06-20 Shipley Company, L.L.C. Polymers and photoresist compositions
US6060217A (en) * 1997-09-02 2000-05-09 Kodak Polychrome Graphics Llc Thermal lithographic printing plates
US6117622A (en) * 1997-09-05 2000-09-12 Fusion Systems Corporation Controlled shrinkage of photoresist
US6057084A (en) 1997-10-03 2000-05-02 Fusion Systems Corporation Controlled amine poisoning for reduced shrinkage of features formed in photoresist
JP3024128B2 (ja) * 1998-11-27 2000-03-21 ジェイエスアール株式会社 ポジ型感放射線性樹脂組成物
US6787283B1 (en) 1999-07-22 2004-09-07 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
US6680157B1 (en) * 2000-10-12 2004-01-20 Massachusetts Institute Of Technology Resist methods and materials for UV and electron-beam lithography with reduced outgassing
DE60204301T2 (de) 2001-01-26 2005-10-13 Nippon Soda Co. Ltd. Verfahren zur herstellung von teilgeschützten poly(hydroxystryolen)
KR100750267B1 (ko) * 2001-04-03 2007-08-17 후지필름 가부시키가이샤 포지티브 포토레지스트 조성물
JP3851594B2 (ja) 2002-07-04 2006-11-29 Ａｚエレクトロニックマテリアルズ株式会社 反射防止コーティング用組成物およびパターン形成方法
JP4723557B2 (ja) 2007-12-14 2011-07-13 Ａｚエレクトロニックマテリアルズ株式会社 表面反射防止膜形成用組成物及びそれを用いたパターン形成方法
US8338077B2 (en) 2009-06-22 2012-12-25 Rohm And Haas Electronic Materials Llc Photoacid generators and photoresists comprising same
JP6228353B2 (ja) 2009-12-10 2017-11-08 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 光酸発生剤およびこれを含むフォトレジスト
TWI464140B (zh) 2009-12-10 2014-12-11 羅門哈斯電子材料有限公司 膽酸鹽光酸產生劑及含該光酸產生劑之光阻
EP2336826B1 (de) 2009-12-14 2012-10-24 Rohm and Haas Electronic Materials LLC Sulfonyl-Fotosäuregeneratoren und diese Fotosäuregeneratoren enthaltende Fotoresiste
US10295910B2 (en) 2009-12-15 2019-05-21 Rohm And Haas Electronic Materials Llc Photoresists and methods of use thereof
JP5753681B2 (ja) 2009-12-15 2015-07-22 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジストおよびその使用方法
JP2011186432A (ja) 2009-12-15 2011-09-22 Rohm & Haas Electronic Materials Llc フォトレジストおよびその使用方法
CN102207678B (zh) 2010-01-25 2015-05-20 罗门哈斯电子材料有限公司 包含含氮化合物的光致抗蚀剂
JP5969171B2 (ja) 2010-03-31 2016-08-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 光酸発生剤およびこれを含むフォトレジスト
EP2383611A3 (de) 2010-04-27 2012-01-25 Rohm and Haas Electronic Materials LLC Fotosäureerzeuger und Fotolacke damit
EP2472327A1 (de) 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Fotoresiste und Verwendungsverfahren dafür
JP2018127513A (ja) 2017-02-06 2018-08-16 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 半導体水溶性組成物、およびその使用
JP2020067547A (ja) 2018-10-24 2020-04-30 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 半導体水溶性組成物およびその使用
JP2021165771A (ja) 2020-04-06 2021-10-14 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH 電子機器製造水溶液、レジストパターンの製造方法およびデバイスの製造方法
IL309082A (en) 2021-07-15 2024-02-01 Merck Patent Gmbh Aqueous solution for manufacturing an electronic device, a method for manufacturing a resistive pattern and a method for manufacturing a device

Family Cites Families (13)

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US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4837124A (en) * 1986-02-24 1989-06-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
DE3751745T2 (de) * 1986-10-23 1996-09-26 Ibm Hochempfindliche Resiste mit Selbstzersetzungstemperatur grösser als etwa 160 Grad Celsius
EP0285025A3 (de) † 1987-03-30 1989-01-18 Shipley Company Inc. Silylierte Phenolharze
MY103006A (en) * 1987-03-30 1993-03-31 Microsi Inc Photoresist compositions
DE3817011A1 (de) * 1988-05-19 1989-11-30 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
DE3817012A1 (de) * 1988-05-19 1989-11-30 Basf Ag Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern
DE3817009A1 (de) * 1988-05-19 1989-11-30 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
JPH01300248A (ja) * 1988-05-30 1989-12-04 Tosoh Corp フォトレジスト組成物
JPH01300250A (ja) * 1988-05-30 1989-12-04 Tosoh Corp フォトレジスト組成物
JPH0210355A (ja) * 1988-06-29 1990-01-16 Matsushita Electric Ind Co Ltd パターン形成材料
JPH0223354A (ja) * 1988-07-12 1990-01-25 Fujitsu Ltd パターン形成方法
JPH0262544A (ja) * 1988-08-30 1990-03-02 Tosoh Corp フォトレジスト組成物

Also Published As

Publication number Publication date
JPH02209977A (ja) 1990-08-21
EP0366590A3 (en) 1990-10-24
EP0366590B2 (de) 2001-03-21
JP2839159B2 (ja) 1998-12-16
EP0366590B1 (de) 1996-03-20
DE68926019T2 (de) 1996-10-02
EP0366590A2 (de) 1990-05-02
CA2001384A1 (en) 1990-04-28

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8339 Ceased/non-payment of the annual fee