DE68923056D1 - Halbleiteranordnung mit kurzgeschlossener Anode und Verfahren zu deren Herstellung. - Google Patents

Halbleiteranordnung mit kurzgeschlossener Anode und Verfahren zu deren Herstellung.

Info

Publication number
DE68923056D1
DE68923056D1 DE68923056T DE68923056T DE68923056D1 DE 68923056 D1 DE68923056 D1 DE 68923056D1 DE 68923056 T DE68923056 T DE 68923056T DE 68923056 T DE68923056 T DE 68923056T DE 68923056 D1 DE68923056 D1 DE 68923056D1
Authority
DE
Germany
Prior art keywords
short
production
semiconductor device
circuited anode
circuited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68923056T
Other languages
English (en)
Other versions
DE68923056T2 (de
Inventor
Hideo C O Intellectual Matsuda
Takeomi C O Intellectu Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE68923056D1 publication Critical patent/DE68923056D1/de
Application granted granted Critical
Publication of DE68923056T2 publication Critical patent/DE68923056T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE68923056T 1988-10-04 1989-09-14 Halbleiteranordnung mit kurzgeschlossener Anode und Verfahren zu deren Herstellung. Expired - Fee Related DE68923056T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25045688 1988-10-04

Publications (2)

Publication Number Publication Date
DE68923056D1 true DE68923056D1 (de) 1995-07-20
DE68923056T2 DE68923056T2 (de) 1995-11-30

Family

ID=17208146

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68923056T Expired - Fee Related DE68923056T2 (de) 1988-10-04 1989-09-14 Halbleiteranordnung mit kurzgeschlossener Anode und Verfahren zu deren Herstellung.

Country Status (3)

Country Link
US (1) US5148254A (de)
EP (1) EP0366916B1 (de)
DE (1) DE68923056T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5204273A (en) * 1990-08-20 1993-04-20 Siemens Aktiengesellschaft Method for the manufacturing of a thyristor with defined lateral resistor
JP2804216B2 (ja) * 1993-06-22 1998-09-24 株式会社日立製作所 ゲートターンオフサイリスタ
DE4337209A1 (de) * 1993-10-30 1995-05-04 Abb Management Ag Abschaltbarer Thyristor
JP3241526B2 (ja) * 1994-04-04 2001-12-25 三菱電機株式会社 ゲートターンオフサイリスタおよびその製造方法
DE4431294A1 (de) * 1994-09-02 1996-03-07 Abb Management Ag Abschaltbarer Thyristor für hohe Blockierspannungen und kleiner Bauelementdicke
US5962878A (en) * 1997-09-17 1999-10-05 Citizen Watch Co., Ltd. Surge protection device and method of fabricating the same

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3251004A (en) * 1961-04-27 1966-05-10 Merck & Co Inc Relaxation oscillator semiconductor solid circuit structure
US4009059A (en) * 1972-01-08 1977-02-22 Mitsubishi Denki Kabushiki Kaisha Reverse conducting thyristor and process for producing the same
CH543178A (de) * 1972-03-27 1973-10-15 Bbc Brown Boveri & Cie Kontinuierlich steuerbares Leistungshalbleiterbauelement
DE2636234A1 (de) * 1976-08-12 1978-02-16 Bbc Brown Boveri & Cie Steuerbares halbleiterbauelement fuer zwei stromrichtungen
JPS54111790A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Semiconductor switchgear
JPS6043032B2 (ja) * 1978-09-14 1985-09-26 株式会社日立製作所 ゲートターンオフサイリスタ
JPS6019147B2 (ja) * 1979-01-24 1985-05-14 株式会社日立製作所 ゲ−ト・タ−ン・オフ・サイリスタ
JPS571257A (en) * 1980-06-04 1982-01-06 Hitachi Ltd Semiconductor device
JPS5773956A (en) * 1980-10-27 1982-05-08 Hitachi Ltd Glass coated semiconductor device
JPS57201077A (en) * 1981-06-05 1982-12-09 Hitachi Ltd Semiconductor switching device
JPS59134876A (ja) * 1983-01-20 1984-08-02 Mitsubishi Electric Corp 半導体装置
JPS6085563A (ja) * 1983-10-17 1985-05-15 Mitsubishi Electric Corp ゲ−ト・タ−ンオフサイリスタの製造方法
GB2150753B (en) * 1983-11-30 1987-04-01 Toshiba Kk Semiconductor device
JPS60119776A (ja) * 1983-11-30 1985-06-27 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
DE3586735D1 (de) * 1984-10-19 1992-11-12 Bbc Brown Boveri & Cie Abschaltbares leistungshalbleiterbauelement.
US4757025A (en) * 1985-03-25 1988-07-12 Motorola Inc. Method of making gate turn off switch with anode short and buried base
JPH0715991B2 (ja) * 1985-06-12 1995-02-22 株式会社東芝 半導体装置の製造方法
DE3628857A1 (de) * 1985-08-27 1987-03-12 Mitsubishi Electric Corp Halbleitereinrichtung
JPS63209167A (ja) * 1987-02-26 1988-08-30 Hitachi Ltd 半導体装置の製造方法
US4951110A (en) * 1987-11-03 1990-08-21 Siemens Aktiengesellschaft Power semiconductor structural element with four layers
DE3742638A1 (de) * 1987-12-16 1989-06-29 Semikron Elektronik Gmbh Gto-thyristor

Also Published As

Publication number Publication date
EP0366916A2 (de) 1990-05-09
DE68923056T2 (de) 1995-11-30
US5148254A (en) 1992-09-15
EP0366916B1 (de) 1995-06-14
EP0366916A3 (de) 1991-08-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee