DE68921780D1 - In ein Halbleiterspeichergerät eingebaute Redundanzschaltung. - Google Patents
In ein Halbleiterspeichergerät eingebaute Redundanzschaltung.Info
- Publication number
- DE68921780D1 DE68921780D1 DE68921780T DE68921780T DE68921780D1 DE 68921780 D1 DE68921780 D1 DE 68921780D1 DE 68921780 T DE68921780 T DE 68921780T DE 68921780 T DE68921780 T DE 68921780T DE 68921780 D1 DE68921780 D1 DE 68921780D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- circuit built
- redundancy circuit
- redundancy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/52—Protection of memory contents; Detection of errors in memory contents
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63090519A JP2785936B2 (ja) | 1988-04-12 | 1988-04-12 | 冗長回路のテスト方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68921780D1 true DE68921780D1 (de) | 1995-04-27 |
DE68921780T2 DE68921780T2 (de) | 1995-11-23 |
Family
ID=14000699
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68921780T Expired - Fee Related DE68921780T2 (de) | 1988-04-12 | 1989-04-11 | In ein Halbleiterspeichergerät eingebaute Redundanzschaltung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5018104A (de) |
EP (1) | EP0337384B1 (de) |
JP (1) | JP2785936B2 (de) |
DE (1) | DE68921780T2 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0335498A (ja) * | 1989-06-30 | 1991-02-15 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP3021771B2 (ja) * | 1991-04-27 | 2000-03-15 | 日本電気株式会社 | 冗長回路 |
US5251169A (en) * | 1991-05-06 | 1993-10-05 | Lattice Semiconductor Corporation | Non-volatile erasable and programmable interconnect cell |
US5325333A (en) * | 1991-12-27 | 1994-06-28 | Nec Corporation | Semiconductor memory device |
US5502333A (en) * | 1994-03-30 | 1996-03-26 | International Business Machines Corporation | Semiconductor stack structures and fabrication/sparing methods utilizing programmable spare circuit |
JPH1116387A (ja) * | 1997-06-26 | 1999-01-22 | Mitsubishi Electric Corp | 冗長回路 |
US6535034B1 (en) | 1997-07-30 | 2003-03-18 | Programmable Silicon Solutions | High performance integrated circuit devices adaptable to use lower supply voltages with smaller device geometries |
US5841694A (en) * | 1997-07-30 | 1998-11-24 | Programmable Silicon Solutions | High performance programmable interconnect |
KR19990053744A (ko) * | 1997-12-24 | 1999-07-15 | 김영환 | 반도체 소자의 게이트전극 형성방법 |
JPH11231967A (ja) | 1998-02-17 | 1999-08-27 | Nec Corp | クロック出力回路 |
JP3625383B2 (ja) * | 1998-08-25 | 2005-03-02 | シャープ株式会社 | 不揮発性半導体メモリ装置 |
JP4600792B2 (ja) | 2000-07-13 | 2010-12-15 | エルピーダメモリ株式会社 | 半導体装置 |
TWI591959B (zh) * | 2016-03-18 | 2017-07-11 | 立積電子股份有限公司 | 主動電路 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4535259A (en) * | 1982-06-18 | 1985-08-13 | Seeq Technology, Inc. | Sense amplifier for use with a semiconductor memory array |
JPS593795A (ja) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | 半導体記憶装置 |
US4556975A (en) * | 1983-02-07 | 1985-12-03 | Westinghouse Electric Corp. | Programmable redundancy circuit |
US4567580A (en) * | 1983-06-29 | 1986-01-28 | Fairchild Camera & Instrument Corporation | Redundancy roll call technique |
JP2530610B2 (ja) * | 1986-02-27 | 1996-09-04 | 富士通株式会社 | 半導体記憶装置 |
JPS62222500A (ja) * | 1986-03-20 | 1987-09-30 | Fujitsu Ltd | 半導体記憶装置 |
-
1988
- 1988-04-12 JP JP63090519A patent/JP2785936B2/ja not_active Expired - Lifetime
-
1989
- 1989-04-11 EP EP89106397A patent/EP0337384B1/de not_active Expired - Lifetime
- 1989-04-11 DE DE68921780T patent/DE68921780T2/de not_active Expired - Fee Related
- 1989-04-12 US US07/337,003 patent/US5018104A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5018104A (en) | 1991-05-21 |
JPH01261845A (ja) | 1989-10-18 |
DE68921780T2 (de) | 1995-11-23 |
EP0337384A3 (de) | 1991-07-17 |
EP0337384B1 (de) | 1995-03-22 |
JP2785936B2 (ja) | 1998-08-13 |
EP0337384A2 (de) | 1989-10-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8339 | Ceased/non-payment of the annual fee |