DE60329060D1 - Herstellungsverfahren eines integrierten Schaltkreises und dessen Vorprodukt - Google Patents

Herstellungsverfahren eines integrierten Schaltkreises und dessen Vorprodukt

Info

Publication number
DE60329060D1
DE60329060D1 DE60329060T DE60329060T DE60329060D1 DE 60329060 D1 DE60329060 D1 DE 60329060D1 DE 60329060 T DE60329060 T DE 60329060T DE 60329060 T DE60329060 T DE 60329060T DE 60329060 D1 DE60329060 D1 DE 60329060D1
Authority
DE
Germany
Prior art keywords
precursor
integrated circuit
manufacturing process
manufacturing
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60329060T
Other languages
English (en)
Inventor
Luc Ouellet
Jules Poisson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne Digital Imaging Inc
Original Assignee
Dalsa Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dalsa Semiconductor Inc filed Critical Dalsa Semiconductor Inc
Application granted granted Critical
Publication of DE60329060D1 publication Critical patent/DE60329060D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0172—Seals
    • B81C2203/019—Seals characterised by the material or arrangement of seals between parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Die Bonding (AREA)
DE60329060T 2002-10-04 2003-10-03 Herstellungsverfahren eines integrierten Schaltkreises und dessen Vorprodukt Expired - Lifetime DE60329060D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41578202P 2002-10-04 2002-10-04
US10/310,814 US7138293B2 (en) 2002-10-04 2002-12-06 Wafer level packaging technique for microdevices

Publications (1)

Publication Number Publication Date
DE60329060D1 true DE60329060D1 (de) 2009-10-15

Family

ID=32045019

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60329060T Expired - Lifetime DE60329060D1 (de) 2002-10-04 2003-10-03 Herstellungsverfahren eines integrierten Schaltkreises und dessen Vorprodukt

Country Status (3)

Country Link
US (1) US7138293B2 (de)
EP (1) EP1405821B1 (de)
DE (1) DE60329060D1 (de)

Families Citing this family (110)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7242099B2 (en) * 2001-03-05 2007-07-10 Megica Corporation Chip package with multiple chips connected by bumps
US6862934B2 (en) * 2001-10-05 2005-03-08 The Charles Stark Draper Laboratory, Inc. Tuning fork gyroscope
JP2003198117A (ja) * 2001-12-28 2003-07-11 Matsushita Electric Ind Co Ltd はんだ付け方法および接合構造体
US6953985B2 (en) * 2002-06-12 2005-10-11 Freescale Semiconductor, Inc. Wafer level MEMS packaging
JP4766831B2 (ja) * 2002-11-26 2011-09-07 株式会社村田製作所 電子部品の製造方法
DE10309677B4 (de) * 2003-02-27 2008-07-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mikroelektromechanisches Bauteil und Verfahren zur Herstellung eines mikroelektromechanischen Bauteils
JP4758614B2 (ja) * 2003-04-07 2011-08-31 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 電気めっき組成物および方法
US20040232535A1 (en) * 2003-05-22 2004-11-25 Terry Tarn Microelectromechanical device packages with integral heaters
US6858475B2 (en) * 2003-06-30 2005-02-22 Intel Corporation Method of forming an integrated circuit substrate
EP1517166B1 (de) * 2003-09-15 2015-10-21 Nuvotronics, LLC Vorrichtungsgehäuse und Verfahren zu derer Prüfung und Herstellung
US7723208B2 (en) * 2003-09-24 2010-05-25 Intel Corporation Integrated re-combiner for electroosmotic pumps using porous frits
US20050093134A1 (en) 2003-10-30 2005-05-05 Terry Tarn Device packages with low stress assembly process
US7291513B2 (en) * 2003-12-15 2007-11-06 Dalsa Semiconductor Inc. Hermetic wafer-level packaging for MEMS devices with low-temperature metallurgy
DE102004005361B4 (de) * 2004-02-03 2008-01-17 Qimonda Ag Verfahren zur Herstellung von metallischen Leitbahnen und Kontaktflächen auf elektronischen Bauelementen
US20090151972A1 (en) * 2004-05-28 2009-06-18 Stellar Microdevices, Inc. Cold weld hermetic mems package and method of manufacture
KR100605315B1 (ko) 2004-07-30 2006-07-28 삼성전자주식회사 집적회로 칩의 입출력 패드 구조
US7422962B2 (en) * 2004-10-27 2008-09-09 Hewlett-Packard Development Company, L.P. Method of singulating electronic devices
US7300812B2 (en) 2004-10-29 2007-11-27 Hewlett-Packard Development Coompany, L.P. Micro electrical mechanical system
EP2428486B1 (de) 2004-11-04 2021-04-14 Microchips Biotech, Inc. Press- und Kaltschweißverfahren und -vorrichtungen
US7999366B2 (en) * 2004-11-26 2011-08-16 Stmicroelectronics, S.A. Micro-component packaging process and set of micro-components resulting from this process
US7528061B2 (en) * 2004-12-10 2009-05-05 L-3 Communications Corporation Systems and methods for solder bonding
US7601554B1 (en) 2005-01-31 2009-10-13 The United States Of America As Represented By The Secretary Of The Air Force Shaped MEMS contact
US7235750B1 (en) 2005-01-31 2007-06-26 United States Of America As Represented By The Secretary Of The Air Force Radio frequency MEMS switch contact metal selection
US7358106B2 (en) * 2005-03-03 2008-04-15 Stellar Micro Devices Hermetic MEMS package and method of manufacture
CN100403033C (zh) * 2005-03-23 2008-07-16 中国电子科技集团公司第四十九研究所 应用于硅微加速度传感器的键合方法
US20060214266A1 (en) * 2005-03-23 2006-09-28 Jordan Larry L Bevel dicing semiconductor components
US7508063B2 (en) * 2005-04-05 2009-03-24 Texas Instruments Incorporated Low cost hermetically sealed package
US7408250B2 (en) * 2005-04-05 2008-08-05 Texas Instruments Incorporated Micromirror array device with compliant adhesive
CN101198724A (zh) * 2005-06-15 2008-06-11 丹福斯有限公司 具有贵金属外层的耐腐蚀物体
JP2007027279A (ja) 2005-07-13 2007-02-01 Shinko Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
TWI265579B (en) * 2005-08-02 2006-11-01 Advanced Semiconductor Eng Package structure and wafer level package method
TWI257656B (en) * 2005-08-03 2006-07-01 Advanced Semiconductor Eng Method for fabricating protection caps for protecting elements on wafer surface
US20070040501A1 (en) 2005-08-18 2007-02-22 Aitken Bruce G Method for inhibiting oxygen and moisture degradation of a device and the resulting device
US20080206589A1 (en) * 2007-02-28 2008-08-28 Bruce Gardiner Aitken Low tempertature sintering using Sn2+ containing inorganic materials to hermetically seal a device
US7722929B2 (en) * 2005-08-18 2010-05-25 Corning Incorporated Sealing technique for decreasing the time it takes to hermetically seal a device and the resulting hermetically sealed device
US7829147B2 (en) 2005-08-18 2010-11-09 Corning Incorporated Hermetically sealing a device without a heat treating step and the resulting hermetically sealed device
US7582969B2 (en) * 2005-08-26 2009-09-01 Innovative Micro Technology Hermetic interconnect structure and method of manufacture
DE102005040789B4 (de) * 2005-08-29 2014-12-24 Robert Bosch Gmbh Herstellungsverfahren für ein Mikromechanisches Bauelement mit anodisch gebondeter Kappe
US7408243B2 (en) * 2005-12-14 2008-08-05 Honeywell International Inc. High temperature package flip-chip bonding to ceramic
TWI283918B (en) * 2005-12-21 2007-07-11 Siliconware Precision Industries Co Ltd Electronic carrier board and package structure thereof
TWI278081B (en) * 2005-12-22 2007-04-01 Siliconware Precision Industries Co Ltd Electronic carrier board and package structure thereof
US20100189222A1 (en) * 2006-02-16 2010-07-29 Steller Micro Devices Panoramic irradiation system using flat panel x-ray sources
US20100189223A1 (en) * 2006-02-16 2010-07-29 Steller Micro Devices Digitally addressed flat panel x-ray sources
US9324535B2 (en) * 2006-02-16 2016-04-26 Stellarray, Incorporaated Self contained irradiation system using flat panel X-ray sources
TWI299552B (en) * 2006-03-24 2008-08-01 Advanced Semiconductor Eng Package structure
US7781697B2 (en) * 2006-04-10 2010-08-24 Hewlett-Packard Development Company, L.P. Micro-display and methods
DE102006019080B3 (de) 2006-04-25 2007-08-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Herstellungsverfahren für ein gehäustes Bauelement
US7524693B2 (en) * 2006-05-16 2009-04-28 Freescale Semiconductor, Inc. Method and apparatus for forming an electrical connection to a semiconductor substrate
DE102006023998B4 (de) * 2006-05-22 2009-02-19 Infineon Technologies Ag Elektronische Schaltungsanordnung und Verfahren zur Herstellung einer solchen
KR100846569B1 (ko) * 2006-06-14 2008-07-15 매그나칩 반도체 유한회사 Ｍｅｍｓ 소자의 패키지 및 그 제조방법
CN100449740C (zh) * 2006-06-19 2009-01-07 上海集成电路研发中心有限公司 降低半导体器件发热的散热方法、相应器件及其制造方法
US20080048178A1 (en) * 2006-08-24 2008-02-28 Bruce Gardiner Aitken Tin phosphate barrier film, method, and apparatus
US20080048818A1 (en) * 2006-08-25 2008-02-28 Hong Mao Transformers with improved voltage-step-down ratios and DC-to-DC power converters employing same
DE102006046206B4 (de) * 2006-09-29 2009-06-25 Siemens Ag Verbindungseinrichtung zur wahlfreien Verbindung einer Anzahl an Sendern und Empfängern, Kommunikationseinrichtung und Verfahren zum Herstellen einer Verbindungseinrichtung
US8049326B2 (en) * 2007-06-07 2011-11-01 The Regents Of The University Of Michigan Environment-resistant module, micropackage and methods of manufacturing same
US10266392B2 (en) 2007-06-07 2019-04-23 E-Pack, Inc. Environment-resistant module, micropackage and methods of manufacturing same
DE102007030121A1 (de) * 2007-06-29 2009-01-02 Litef Gmbh Verfahren zur Herstellung eines Bauteils und Bauteil
US8211752B2 (en) * 2007-11-26 2012-07-03 Infineon Technologies Ag Device and method including a soldering process
KR100959454B1 (ko) * 2007-12-10 2010-05-25 주식회사 동부하이텍 반도체 소자 및 그 제조 방법
US20090230409A1 (en) * 2008-03-17 2009-09-17 Philips Lumileds Lighting Company, Llc Underfill process for flip-chip leds
JP5522045B2 (ja) 2008-08-21 2014-06-18 株式会社村田製作所 電子部品装置およびその製造方法
JPWO2010021267A1 (ja) * 2008-08-21 2012-01-26 株式会社村田製作所 電子部品装置およびその製造方法
DE102008041674A1 (de) * 2008-08-28 2010-03-04 Robert Bosch Gmbh Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
US20100084752A1 (en) * 2008-10-08 2010-04-08 Honeywell International Inc. Systems and methods for implementing a wafer level hermetic interface chip
US20100117153A1 (en) * 2008-11-07 2010-05-13 Honeywell International Inc. High voltage soi cmos device and method of manufacture
US8980698B2 (en) * 2008-11-10 2015-03-17 Nxp, B.V. MEMS devices
US8089144B2 (en) 2008-12-17 2012-01-03 Denso Corporation Semiconductor device and method for manufacturing the same
US20100190023A1 (en) * 2009-01-26 2010-07-29 Adam Franklin Gross Metal bonded nanotube array
US7846815B2 (en) * 2009-03-30 2010-12-07 Freescale Semiconductor, Inc. Eutectic flow containment in a semiconductor fabrication process
US20100320595A1 (en) * 2009-06-22 2010-12-23 Honeywell International Inc. Hybrid hermetic interface chip
TWI388038B (zh) * 2009-07-23 2013-03-01 Ind Tech Res Inst 感測元件結構與製造方法
CN101993031B (zh) * 2009-08-13 2014-04-09 联华电子股份有限公司 接触垫的保护结构与半导体结构
US10040681B2 (en) * 2009-08-28 2018-08-07 Miradia Inc. Method and system for MEMS devices
US8709538B1 (en) * 2009-09-29 2014-04-29 The Boeing Company Substantially aligned boron nitride nano-element arrays and methods for their use and preparation
KR101096548B1 (ko) * 2009-11-06 2011-12-20 주식회사 비에스이 멤스 마이크로폰 및 그 제조방법
US8119431B2 (en) * 2009-12-08 2012-02-21 Freescale Semiconductor, Inc. Method of forming a micro-electromechanical system (MEMS) having a gap stop
US8551814B2 (en) * 2010-03-11 2013-10-08 Freescale Semiconductor, Inc. Method of fabricating a semiconductor device that limits damage to elements of the semiconductor device that are exposed during processing
US8518815B2 (en) * 2010-07-07 2013-08-27 Lam Research Corporation Methods, devices, and materials for metallization
EP2455332B1 (de) * 2010-11-19 2014-02-12 Imec Verfahren zur Herstellung einer temporären Kappe auf einem MEMS-Bauteil
CN102556944B (zh) * 2010-12-31 2014-11-05 中芯国际集成电路制造(上海)有限公司 Mems装置的制作方法
US9278853B2 (en) 2011-03-28 2016-03-08 Miramems Sensing Technology Co., Ltd. Manufacturing process of MEMS device
US8754529B2 (en) * 2011-03-28 2014-06-17 Miradia, Inc. MEMS device with simplified electrical conducting paths
TWI425547B (zh) * 2011-05-06 2014-02-01 Nat Chip Implementation Ct Nat Applied Res Lab Ｃｍｏｓ微機電開關結構
US8741738B2 (en) 2011-06-08 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabrication of a semiconductor apparatus comprising substrates including Al/Ge and Cu contact layers to form a metallic alloy
US8652865B2 (en) 2011-08-16 2014-02-18 Freescale Semiconductor, Inc. Attaching a MEMS to a bonding wafer
US8629036B2 (en) 2011-11-11 2014-01-14 International Business Machines Corporation Integrated semiconductor devices with amorphous silicon beam, methods of manufacture and design structure
US9105751B2 (en) 2011-11-11 2015-08-11 International Business Machines Corporation Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure
US8546240B2 (en) 2011-11-11 2013-10-01 International Business Machines Corporation Methods of manufacturing integrated semiconductor devices with single crystalline beam
CN103121658B (zh) * 2011-11-21 2015-10-28 水木智芯科技（北京）有限公司 电容式三轴微陀螺仪的硅外延制造方法
WO2013080238A1 (ja) * 2011-11-28 2013-06-06 日立オートモティブシステムズ株式会社 複合センサおよびその製造方法
TWI476839B (zh) * 2012-07-06 2015-03-11 Univ Nat Chiao Tung 晶圓次微米接合方法及其接合層
CN103663356A (zh) * 2012-09-05 2014-03-26 中国科学院微电子研究所 透明衬底探测器芯片的封装方法及其封装结构
CN103832969B (zh) * 2012-11-23 2016-06-01 上海微电子装备有限公司 一种晶圆级键合方法
DE102014202220B3 (de) * 2013-12-03 2015-05-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines Deckelsubstrats und gehäustes strahlungsemittierendes Bauelement
WO2015111753A1 (ja) * 2014-01-27 2015-07-30 独立行政法人産業技術総合研究所 パッケージ形成方法及びｍｅｍｓ用パッケージ
US9776858B2 (en) 2014-02-26 2017-10-03 Taiwan Semiconductor Manufacturing Company Limited Semiconductor arrangement and formation thereof
CN104445046B (zh) * 2014-06-24 2016-05-18 华天科技（昆山）电子有限公司 新型晶圆级mems芯片封装结构及其封装方法
WO2016027186A1 (en) * 2014-08-19 2016-02-25 Koninklijke Philips N.V. Sapphire collector for reducing mechanical damage during die level laser lift-off
US9613926B2 (en) 2014-12-26 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer to wafer bonding process and structures
CN105987687B (zh) * 2015-02-15 2019-06-28 水木智芯科技（北京）有限公司 新的氮化硅阻隔三轴陀螺仪工艺
EP3295479B1 (de) * 2015-05-13 2018-09-26 Lumileds Holding B.V. Saphirkollektor zur verringerung von mechanischer schädigung während einer laserabhebung auf chipebene
DE102015108494B4 (de) * 2015-05-29 2024-01-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines Gehäusedeckels und Verfahren zum Herstellen eines optoelektronischen Bauelements
US9874693B2 (en) 2015-06-10 2018-01-23 The Research Foundation For The State University Of New York Method and structure for integrating photonics with CMOs
CN105293419B (zh) * 2015-10-15 2016-12-07 华东光电集成器件研究所 一种防止悬浮层刻蚀损伤的mems器件
US10242967B2 (en) * 2017-05-16 2019-03-26 Raytheon Company Die encapsulation in oxide bonded wafer stack
US10319654B1 (en) 2017-12-01 2019-06-11 Cubic Corporation Integrated chip scale packages
WO2019195334A1 (en) * 2018-04-03 2019-10-10 Corning Incorporated Hermetically sealed optically transparent wafer-level packages and methods for making the same
CN111115549B (zh) * 2018-10-31 2022-12-27 深圳华大智造极创科技有限公司 低温封装结构及方法
US11355460B1 (en) * 2020-12-07 2022-06-07 Infineon Technologies Ag Molded semiconductor package with high voltage isolation
CN114189995A (zh) * 2021-12-02 2022-03-15 广州得尔塔影像技术有限公司 电路板的制作方法以及电路板

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06328617A (ja) * 1993-05-18 1994-11-29 Nippon Steel Corp マグネシウム−アルミニウムクラッド材
US6452238B1 (en) * 1999-10-04 2002-09-17 Texas Instruments Incorporated MEMS wafer level package
US20020071169A1 (en) 2000-02-01 2002-06-13 Bowers John Edward Micro-electro-mechanical-system (MEMS) mirror device
CA2413965C (en) 2000-06-21 2011-01-11 Input/Output, Inc. Accelerometer with folded beams
AU2002237682A1 (en) 2000-11-27 2002-06-03 Microsensors Inc. Wafer eutectic bonding of mems gyros
US20020096421A1 (en) * 2000-11-29 2002-07-25 Cohn Michael B. MEMS device with integral packaging
US6778046B2 (en) * 2001-09-17 2004-08-17 Magfusion Inc. Latching micro magnetic relay packages and methods of packaging
US20030116845A1 (en) * 2001-12-21 2003-06-26 Bojkov Christo P. Waferlevel method for direct bumping on copper pads in integrated circuits

Also Published As

Publication number Publication date
EP1405821B1 (de) 2009-09-02
EP1405821A3 (de) 2004-12-22
US7138293B2 (en) 2006-11-21
US20040067604A1 (en) 2004-04-08
EP1405821A2 (de) 2004-04-07

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