AU2003248770A8 - Integrated circuit including field effect transistor and method of manufacture - Google Patents

Integrated circuit including field effect transistor and method of manufacture

Info

Publication number
AU2003248770A8
AU2003248770A8 AU2003248770A AU2003248770A AU2003248770A8 AU 2003248770 A8 AU2003248770 A8 AU 2003248770A8 AU 2003248770 A AU2003248770 A AU 2003248770A AU 2003248770 A AU2003248770 A AU 2003248770A AU 2003248770 A8 AU2003248770 A8 AU 2003248770A8
Authority
AU
Australia
Prior art keywords
manufacture
integrated circuit
field effect
effect transistor
circuit including
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003248770A
Other versions
AU2003248770A1 (en
Inventor
Paul Brazis
Steven Scheifers
Abhijit Roy Chowdhuri
Daniel Gamota
Krishna Kalanasundaram
Jerzy Wielgus
Jie Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2003248770A8 publication Critical patent/AU2003248770A8/en
Publication of AU2003248770A1 publication Critical patent/AU2003248770A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
AU2003248770A 2002-07-02 2003-06-03 Integrated circuit including field effect transistor and method of manufacture Abandoned AU2003248770A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/187,737 US6661024B1 (en) 2002-07-02 2002-07-02 Integrated circuit including field effect transistor and method of manufacture
US10/187,737 2002-07-02
PCT/US2003/020650 WO2004006633A2 (en) 2002-07-02 2003-06-03 Integrated circuit including field effect transistor and method of manufacture

Publications (2)

Publication Number Publication Date
AU2003248770A8 true AU2003248770A8 (en) 2004-01-23
AU2003248770A1 AU2003248770A1 (en) 2004-01-23

Family

ID=29711413

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003248770A Abandoned AU2003248770A1 (en) 2002-07-02 2003-06-03 Integrated circuit including field effect transistor and method of manufacture

Country Status (6)

Country Link
US (1) US6661024B1 (en)
EP (1) EP1540734A4 (en)
JP (1) JP4668613B2 (en)
CN (1) CN100359700C (en)
AU (1) AU2003248770A1 (en)
WO (1) WO2004006633A2 (en)

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US6784017B2 (en) * 2002-08-12 2004-08-31 Precision Dynamics Corporation Method of creating a high performance organic semiconductor device
US6905908B2 (en) * 2002-12-26 2005-06-14 Motorola, Inc. Method of fabricating organic field effect transistors
JP2004304009A (en) * 2003-03-31 2004-10-28 Canon Inc Organic thin film transistor
US20040266054A1 (en) * 2003-06-30 2004-12-30 Brazis Paul W. OFET channel fabrication
JP2005079549A (en) * 2003-09-03 2005-03-24 Victor Co Of Japan Ltd Organic thin film transistor
KR100549227B1 (en) * 2003-09-06 2006-02-03 한국전자통신연구원 Method for manufacturing organic molecular device
US7767998B2 (en) * 2003-12-04 2010-08-03 Alcatel-Lucent Usa Inc. OFETs with active channels formed of densified layers
KR101002332B1 (en) * 2003-12-30 2010-12-17 엘지디스플레이 주식회사 Liquid Crystal Display Device And Method For Fabricating The Same
GB0407739D0 (en) * 2004-04-05 2004-05-12 Univ Cambridge Tech Dual-gate transistors
US7372070B2 (en) * 2004-05-12 2008-05-13 Matsushita Electric Industrial Co., Ltd. Organic field effect transistor and method of manufacturing the same
WO2005122233A1 (en) * 2004-06-10 2005-12-22 Yamanashi University Shot key gate organic field effect transistor and manufacturing method thereof
US7045814B2 (en) * 2004-06-24 2006-05-16 Lucent Technologies Inc. OFET structures with both n- and p-type channels
US7244626B2 (en) * 2004-06-30 2007-07-17 Motorola, Inc. Semiconductor devices shared element(s) apparatus and method
JP2006073794A (en) * 2004-09-02 2006-03-16 Victor Co Of Japan Ltd Field effect transistor and manufacturing method thereof
KR100659061B1 (en) * 2004-09-20 2006-12-19 삼성에스디아이 주식회사 Organic thin film transistor and Flat panel display with the same
US20060113569A1 (en) * 2004-11-03 2006-06-01 Akinwande Akintunde I Control of threshold voltage in organic field effect transistors
JP4792781B2 (en) * 2004-12-06 2011-10-12 凸版印刷株式会社 Thin film transistor manufacturing method
US20060131616A1 (en) * 2004-12-21 2006-06-22 Devaney Douglas E Copperless flexible circuit
JP2008544477A (en) 2005-05-09 2008-12-04 ナノ イープリント リミテッド Electronic devices
DE102005022000B8 (en) * 2005-05-09 2010-08-12 O-Flexx Technologies Gmbh Process for the preparation of electronic units from two multilayer starting structures and their use
KR100647695B1 (en) * 2005-05-27 2006-11-23 삼성에스디아이 주식회사 Otft and fabrication method thereof and flat panel display device with the same
GB2445487B (en) * 2005-08-31 2011-11-02 Sumitomo Chemical Co Transistor, method for manufacturing same, and semiconductor device comprising such transistor
US20070090869A1 (en) * 2005-10-26 2007-04-26 Motorola, Inc. Combined power source and printed transistor circuit apparatus and method
US20070090459A1 (en) * 2005-10-26 2007-04-26 Motorola, Inc. Multiple gate printed transistor method and apparatus
JP4887848B2 (en) * 2006-03-15 2012-02-29 セイコーエプソン株式会社 Circuit board, electro-optical device and electronic apparatus
GB2437112B (en) * 2006-04-11 2011-04-13 Nicholas Jim Stone A method of making an electrical device
TWI316760B (en) * 2006-05-03 2009-11-01 Ind Tech Res Inst Circuit structure with doubl-gate organic thin film transistors and application thereof
CN101022152B (en) * 2007-03-20 2011-03-09 广州新视界光电科技有限公司 Polymer electrolytic thin film transistor
KR101501699B1 (en) * 2007-09-19 2015-03-16 삼성디스플레이 주식회사 Organic thin film transistor substrate and method of manufacturing the same
JP5170627B2 (en) * 2007-10-12 2013-03-27 独立行政法人産業技術総合研究所 Method for manufacturing organic semiconductor device and organic semiconductor device
JP5396709B2 (en) * 2007-12-11 2014-01-22 セイコーエプソン株式会社 Thin film transistor, electro-optical device and electronic apparatus
PT103998B (en) * 2008-03-20 2011-03-10 Univ Nova De Lisboa ELECTRONIC AND OPTOELECTRONIC FIELD EFFECT DEVICES UNDERSTANDING NATURAL, SYNTHETIC OR MIST FIBER LAYERS AND THEIR MANUFACTURING PROCESS
US8623478B2 (en) 2009-03-31 2014-01-07 Dic Corporation Organic semiconductor ink composition and method for forming organic semiconductor pattern using the same
JP6649765B2 (en) * 2015-12-11 2020-02-19 出光興産株式会社 Thin film transistor and method of manufacturing thin film transistor
JP2021132050A (en) * 2018-04-27 2021-09-09 富士フイルム株式会社 Organic semiconductor device and method for manufacturing organic semiconductor device

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FI91573C (en) * 1990-01-04 1994-07-11 Neste Oy Method for manufacturing electronic and electro-optical components and circuits
JPH05110069A (en) * 1991-10-14 1993-04-30 Mitsubishi Electric Corp Manufacture of field effect transistor
US5796121A (en) * 1997-03-25 1998-08-18 International Business Machines Corporation Thin film transistors fabricated on plastic substrates
JP4272353B2 (en) * 1998-01-28 2009-06-03 シン フィルム エレクトロニクス エイエスエイ Method for generating a three-dimensional conductive structure and / or semiconductive structure, a method for erasing the structure, and an electric field generator / modulator used with the method
AU3552699A (en) * 1998-04-10 1999-11-01 E-Ink Corporation Electronic displays using organic-based field effect transistors
US6197663B1 (en) * 1999-12-07 2001-03-06 Lucent Technologies Inc. Process for fabricating integrated circuit devices having thin film transistors
JP2001244467A (en) * 2000-02-28 2001-09-07 Hitachi Ltd Coplanar semiconductor device, display device using it, and method for its manufacture
JP2002215065A (en) * 2000-11-02 2002-07-31 Seiko Epson Corp Organo-electroluminescence device and its manufacturing method and electronic equipment
EP1438753B1 (en) * 2001-10-11 2010-04-07 Koninklijke Philips Electronics N.V. Thin film transistor device and method of manufacturing same

Also Published As

Publication number Publication date
EP1540734A2 (en) 2005-06-15
CN100359700C (en) 2008-01-02
CN1666346A (en) 2005-09-07
US6661024B1 (en) 2003-12-09
WO2004006633A3 (en) 2004-06-17
JP4668613B2 (en) 2011-04-13
AU2003248770A1 (en) 2004-01-23
JP2005532690A (en) 2005-10-27
WO2004006633A2 (en) 2004-01-15
EP1540734A4 (en) 2010-10-27

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase