DE60315295D1 - Ferroelektrischer speicher mit in reihe geschalteten speicherzellen - Google Patents

Ferroelektrischer speicher mit in reihe geschalteten speicherzellen

Info

Publication number
DE60315295D1
DE60315295D1 DE60315295T DE60315295T DE60315295D1 DE 60315295 D1 DE60315295 D1 DE 60315295D1 DE 60315295 T DE60315295 T DE 60315295T DE 60315295 T DE60315295 T DE 60315295T DE 60315295 D1 DE60315295 D1 DE 60315295D1
Authority
DE
Germany
Prior art keywords
serial
memory cells
ferroelectric storage
placed memory
ferroelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60315295T
Other languages
English (en)
Other versions
DE60315295T2 (de
Inventor
Michael Jacob
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qimonda AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Application granted granted Critical
Publication of DE60315295D1 publication Critical patent/DE60315295D1/de
Publication of DE60315295T2 publication Critical patent/DE60315295T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
DE60315295T 2002-06-20 2003-06-18 Ferroelektrischer speicher mit in reihe geschalteten speicherzellen Expired - Fee Related DE60315295T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/177,324 US6795329B2 (en) 2002-06-20 2002-06-20 Memory integrated circuit
US177324 2002-06-20
PCT/EP2003/006477 WO2004001760A1 (en) 2002-06-20 2003-06-18 Ferroelectric memory with series connected memory cells

Publications (2)

Publication Number Publication Date
DE60315295D1 true DE60315295D1 (de) 2007-09-13
DE60315295T2 DE60315295T2 (de) 2008-03-20

Family

ID=29734361

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60315295T Expired - Fee Related DE60315295T2 (de) 2002-06-20 2003-06-18 Ferroelektrischer speicher mit in reihe geschalteten speicherzellen

Country Status (7)

Country Link
US (1) US6795329B2 (de)
EP (1) EP1514275B1 (de)
JP (1) JP4073912B2 (de)
KR (1) KR100583691B1 (de)
CN (1) CN1662995A (de)
DE (1) DE60315295T2 (de)
WO (1) WO2004001760A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4091577B2 (ja) * 2004-07-20 2008-05-28 株式会社東芝 強誘電体メモリ
DE102004041330B3 (de) * 2004-08-26 2006-03-16 Infineon Technologies Ag Speicherschaltung mit ein Widerstandsspeicherelement aufweisenden Speicherzellen
DE102004051152B4 (de) 2004-10-20 2007-12-20 Qimonda Ag NOR-Speicheranordnung von resistiven Speicherelementen
JP4995834B2 (ja) * 2006-12-07 2012-08-08 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP2010080520A (ja) * 2008-09-24 2010-04-08 Toshiba Corp 半導体記憶装置およびその製造方法
JP2010123673A (ja) * 2008-11-18 2010-06-03 Toshiba Corp 半導体記憶装置
KR101929530B1 (ko) 2012-02-21 2019-03-15 삼성전자주식회사 가변 저항 메모리 장치 및 그것의 구동 방법
USD920803S1 (en) 2019-10-23 2021-06-01 S. C. Johnson & Son, Inc. Dispenser
USD980074S1 (en) 2021-07-13 2023-03-07 S. C. Johnson & Son, Inc. Container

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3766181B2 (ja) * 1996-06-10 2006-04-12 株式会社東芝 半導体記憶装置とそれを搭載したシステム
JP3828332B2 (ja) * 2000-03-27 2006-10-04 株式会社東芝 強誘電体メモリ
JP3856424B2 (ja) * 2000-12-25 2006-12-13 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
KR20050009753A (ko) 2005-01-25
EP1514275A1 (de) 2005-03-16
US6795329B2 (en) 2004-09-21
CN1662995A (zh) 2005-08-31
JP2005530355A (ja) 2005-10-06
JP4073912B2 (ja) 2008-04-09
DE60315295T2 (de) 2008-03-20
EP1514275B1 (de) 2007-08-01
US20030237011A1 (en) 2003-12-25
WO2004001760A1 (en) 2003-12-31
KR100583691B1 (ko) 2006-05-26

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: QIMONDA AG, 81739 MUENCHEN, DE

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee