DE60227782D1 - Thermisch stabiler ferroelektrischer Speicher - Google Patents
Thermisch stabiler ferroelektrischer SpeicherInfo
- Publication number
- DE60227782D1 DE60227782D1 DE60227782T DE60227782T DE60227782D1 DE 60227782 D1 DE60227782 D1 DE 60227782D1 DE 60227782 T DE60227782 T DE 60227782T DE 60227782 T DE60227782 T DE 60227782T DE 60227782 D1 DE60227782 D1 DE 60227782D1
- Authority
- DE
- Germany
- Prior art keywords
- ferroelectric memory
- thermally stable
- stable ferroelectric
- thermally
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0028656A KR100493155B1 (ko) | 2002-05-23 | 2002-05-23 | 열적으로 안정한 강유전성 메모리 장치 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60227782D1 true DE60227782D1 (de) | 2008-09-04 |
Family
ID=29417448
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60227782T Expired - Lifetime DE60227782D1 (de) | 2002-05-23 | 2002-12-20 | Thermisch stabiler ferroelektrischer Speicher |
Country Status (6)
Country | Link |
---|---|
US (1) | US6784475B2 (de) |
EP (1) | EP1367592B1 (de) |
JP (1) | JP3887344B2 (de) |
KR (1) | KR100493155B1 (de) |
CN (1) | CN1301507C (de) |
DE (1) | DE60227782D1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070041237A1 (en) * | 2005-07-08 | 2007-02-22 | Nanochip, Inc. | Media for writing highly resolved domains |
KR100682950B1 (ko) * | 2005-07-28 | 2007-02-15 | 삼성전자주식회사 | 강유전체 기록매체 및 그 제조 방법 |
US20080232228A1 (en) * | 2007-03-20 | 2008-09-25 | Nanochip, Inc. | Systems and methods of writing and reading a ferro-electric media with a probe tip |
US20080316897A1 (en) * | 2007-06-19 | 2008-12-25 | Nanochip, Inc. | Methods of treating a surface of a ferroelectric media |
US20080318086A1 (en) * | 2007-06-19 | 2008-12-25 | Nanochip, Inc. | Surface-treated ferroelectric media for use in systems for storing information |
US7626846B2 (en) * | 2007-07-16 | 2009-12-01 | Nanochip, Inc. | Method and media for improving ferroelectric domain stability in an information storage device |
US20090201015A1 (en) * | 2008-02-12 | 2009-08-13 | Nanochip, Inc. | Method and device for detecting ferroelectric polarization |
US20090213492A1 (en) * | 2008-02-22 | 2009-08-27 | Nanochip, Inc. | Method of improving stability of domain polarization in ferroelectric thin films |
US20100002563A1 (en) * | 2008-07-01 | 2010-01-07 | Nanochip, Inc. | Media with tetragonally-strained recording layer having improved surface roughness |
US20100085863A1 (en) * | 2008-10-07 | 2010-04-08 | Nanochip, Inc. | Retuning of ferroelectric media built-in-bias |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07122661A (ja) * | 1993-10-27 | 1995-05-12 | Olympus Optical Co Ltd | 強誘電体メモリ装置 |
JP3136045B2 (ja) * | 1994-04-28 | 2001-02-19 | 沖電気工業株式会社 | メモリセルトランジスタ |
JP3363301B2 (ja) * | 1995-03-08 | 2003-01-08 | シャープ株式会社 | 強誘電体薄膜被覆基板及びその製造方法及び強誘電体薄膜被覆基板によって構成された不揮発性メモリ |
KR100265692B1 (ko) * | 1997-07-03 | 2000-09-15 | 윤덕용 | 에이에프엠을이용한비휘발성메모리소자와해당메모리소자의운영방법 |
JP3585374B2 (ja) * | 1998-07-22 | 2004-11-04 | 松下電器産業株式会社 | 半導体記憶装置 |
US6506643B1 (en) * | 1999-06-11 | 2003-01-14 | Sharp Laboratories Of America, Inc. | Method for forming a damascene FeRAM cell structure |
EP1213745A1 (de) * | 2000-12-05 | 2002-06-12 | Sony International (Europe) GmbH | Herstellungsverfahren für einen ferroelektrischen Speicher und Speicherbauelement |
JP2002270782A (ja) * | 2001-03-14 | 2002-09-20 | Toshiba Corp | 強誘電体キャパシタ |
-
2002
- 2002-05-23 KR KR10-2002-0028656A patent/KR100493155B1/ko not_active IP Right Cessation
- 2002-12-11 CN CNB021559813A patent/CN1301507C/zh not_active Expired - Fee Related
- 2002-12-20 DE DE60227782T patent/DE60227782D1/de not_active Expired - Lifetime
- 2002-12-20 EP EP02258831A patent/EP1367592B1/de not_active Expired - Lifetime
- 2002-12-23 US US10/325,731 patent/US6784475B2/en not_active Expired - Fee Related
-
2003
- 2003-04-08 JP JP2003103531A patent/JP3887344B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6784475B2 (en) | 2004-08-31 |
CN1301507C (zh) | 2007-02-21 |
KR20030090377A (ko) | 2003-11-28 |
EP1367592A2 (de) | 2003-12-03 |
JP2003347513A (ja) | 2003-12-05 |
US20030218196A1 (en) | 2003-11-27 |
JP3887344B2 (ja) | 2007-02-28 |
EP1367592A3 (de) | 2004-05-12 |
CN1459794A (zh) | 2003-12-03 |
EP1367592B1 (de) | 2008-07-23 |
KR100493155B1 (ko) | 2005-06-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |