EP1367592A3 - Thermisch stabiler ferroelektrischer Speicher - Google Patents

Thermisch stabiler ferroelektrischer Speicher Download PDF

Info

Publication number
EP1367592A3
EP1367592A3 EP02258831A EP02258831A EP1367592A3 EP 1367592 A3 EP1367592 A3 EP 1367592A3 EP 02258831 A EP02258831 A EP 02258831A EP 02258831 A EP02258831 A EP 02258831A EP 1367592 A3 EP1367592 A3 EP 1367592A3
Authority
EP
European Patent Office
Prior art keywords
ferroelectric memory
memory
thermally stable
ferroelectric
stable ferroelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP02258831A
Other languages
English (en)
French (fr)
Other versions
EP1367592A2 (de
EP1367592B1 (de
Inventor
Seung-bum 507-1305 Hayan Maeul 5-danji Hong
Hyun-jung 229-1505 Sibeom Woosung Apt. Shin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of EP1367592A2 publication Critical patent/EP1367592A2/de
Publication of EP1367592A3 publication Critical patent/EP1367592A3/de
Application granted granted Critical
Publication of EP1367592B1 publication Critical patent/EP1367592B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
EP02258831A 2002-05-23 2002-12-20 Thermisch stabiler ferroelektrischer Speicher Expired - Lifetime EP1367592B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2002-0028656A KR100493155B1 (ko) 2002-05-23 2002-05-23 열적으로 안정한 강유전성 메모리 장치
KR2002028656 2002-05-23

Publications (3)

Publication Number Publication Date
EP1367592A2 EP1367592A2 (de) 2003-12-03
EP1367592A3 true EP1367592A3 (de) 2004-05-12
EP1367592B1 EP1367592B1 (de) 2008-07-23

Family

ID=29417448

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02258831A Expired - Lifetime EP1367592B1 (de) 2002-05-23 2002-12-20 Thermisch stabiler ferroelektrischer Speicher

Country Status (6)

Country Link
US (1) US6784475B2 (de)
EP (1) EP1367592B1 (de)
JP (1) JP3887344B2 (de)
KR (1) KR100493155B1 (de)
CN (1) CN1301507C (de)
DE (1) DE60227782D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070041237A1 (en) * 2005-07-08 2007-02-22 Nanochip, Inc. Media for writing highly resolved domains
KR100682950B1 (ko) * 2005-07-28 2007-02-15 삼성전자주식회사 강유전체 기록매체 및 그 제조 방법
US20080232228A1 (en) * 2007-03-20 2008-09-25 Nanochip, Inc. Systems and methods of writing and reading a ferro-electric media with a probe tip
US20080316897A1 (en) * 2007-06-19 2008-12-25 Nanochip, Inc. Methods of treating a surface of a ferroelectric media
US20080318086A1 (en) * 2007-06-19 2008-12-25 Nanochip, Inc. Surface-treated ferroelectric media for use in systems for storing information
US7626846B2 (en) * 2007-07-16 2009-12-01 Nanochip, Inc. Method and media for improving ferroelectric domain stability in an information storage device
US20090201015A1 (en) * 2008-02-12 2009-08-13 Nanochip, Inc. Method and device for detecting ferroelectric polarization
US20090213492A1 (en) * 2008-02-22 2009-08-27 Nanochip, Inc. Method of improving stability of domain polarization in ferroelectric thin films
US20100002563A1 (en) * 2008-07-01 2010-01-07 Nanochip, Inc. Media with tetragonally-strained recording layer having improved surface roughness
US20100085863A1 (en) * 2008-10-07 2010-04-08 Nanochip, Inc. Retuning of ferroelectric media built-in-bias

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0732422A2 (de) * 1995-03-08 1996-09-18 Sharp Kabushiki Kaisha Mit einer ferroelektrischen Dünnschicht beschichtetes Substrat, Methode zu dessen Herstellung sowie nichtflüchtiger Speicher, der dieses Substrat enthält
EP1213745A1 (de) * 2000-12-05 2002-06-12 Sony International (Europe) GmbH Herstellungsverfahren für einen ferroelektrischen Speicher und Speicherbauelement

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07122661A (ja) * 1993-10-27 1995-05-12 Olympus Optical Co Ltd 強誘電体メモリ装置
JP3136045B2 (ja) * 1994-04-28 2001-02-19 沖電気工業株式会社 メモリセルトランジスタ
KR100265692B1 (ko) * 1997-07-03 2000-09-15 윤덕용 에이에프엠을이용한비휘발성메모리소자와해당메모리소자의운영방법
JP3585374B2 (ja) * 1998-07-22 2004-11-04 松下電器産業株式会社 半導体記憶装置
US6506643B1 (en) * 1999-06-11 2003-01-14 Sharp Laboratories Of America, Inc. Method for forming a damascene FeRAM cell structure
JP2002270782A (ja) * 2001-03-14 2002-09-20 Toshiba Corp 強誘電体キャパシタ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0732422A2 (de) * 1995-03-08 1996-09-18 Sharp Kabushiki Kaisha Mit einer ferroelektrischen Dünnschicht beschichtetes Substrat, Methode zu dessen Herstellung sowie nichtflüchtiger Speicher, der dieses Substrat enthält
EP1213745A1 (de) * 2000-12-05 2002-06-12 Sony International (Europe) GmbH Herstellungsverfahren für einen ferroelektrischen Speicher und Speicherbauelement

Also Published As

Publication number Publication date
JP3887344B2 (ja) 2007-02-28
CN1459794A (zh) 2003-12-03
KR100493155B1 (ko) 2005-06-03
KR20030090377A (ko) 2003-11-28
US20030218196A1 (en) 2003-11-27
EP1367592A2 (de) 2003-12-03
DE60227782D1 (de) 2008-09-04
CN1301507C (zh) 2007-02-21
US6784475B2 (en) 2004-08-31
JP2003347513A (ja) 2003-12-05
EP1367592B1 (de) 2008-07-23

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