DE60310498D1 - Verfahren zur Reinigung durch Entfernung von Teilchen von Oberflächen, Reinigungsvorrichtung und lithographischer Projektionsapparat - Google Patents

Verfahren zur Reinigung durch Entfernung von Teilchen von Oberflächen, Reinigungsvorrichtung und lithographischer Projektionsapparat

Info

Publication number
DE60310498D1
DE60310498D1 DE60310498T DE60310498T DE60310498D1 DE 60310498 D1 DE60310498 D1 DE 60310498D1 DE 60310498 T DE60310498 T DE 60310498T DE 60310498 T DE60310498 T DE 60310498T DE 60310498 D1 DE60310498 D1 DE 60310498D1
Authority
DE
Germany
Prior art keywords
cleaning
particles
removal
projection apparatus
lithographic projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60310498T
Other languages
English (en)
Other versions
DE60310498T2 (de
Inventor
Gert-Jan Heerens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Application granted granted Critical
Publication of DE60310498D1 publication Critical patent/DE60310498D1/de
Publication of DE60310498T2 publication Critical patent/DE60310498T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE60310498T 2002-09-12 2003-09-10 Verfahren zur Reinigung durch Entfernung von Teilchen von Oberflächen, Reinigungsvorrichtung und lithographischer Projektionsapparat Expired - Fee Related DE60310498T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02256312 2002-09-12
EP02256312 2002-09-12

Publications (2)

Publication Number Publication Date
DE60310498D1 true DE60310498D1 (de) 2007-02-01
DE60310498T2 DE60310498T2 (de) 2007-10-04

Family

ID=32241344

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60310498T Expired - Fee Related DE60310498T2 (de) 2002-09-12 2003-09-10 Verfahren zur Reinigung durch Entfernung von Teilchen von Oberflächen, Reinigungsvorrichtung und lithographischer Projektionsapparat

Country Status (7)

Country Link
US (1) US7306680B2 (de)
JP (1) JP2004102293A (de)
KR (1) KR100563102B1 (de)
CN (1) CN1494956A (de)
DE (1) DE60310498T2 (de)
SG (1) SG111152A1 (de)
TW (1) TWI224527B (de)

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Publication number Priority date Publication date Assignee Title
US20060243300A1 (en) * 2005-04-27 2006-11-02 Patrick Klingbeil Method for cleaning lithographic apparatus
US7522263B2 (en) * 2005-12-27 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and method
US20070146658A1 (en) * 2005-12-27 2007-06-28 Asml Netherlands B.V. Lithographic apparatus and method
US20100183987A1 (en) * 2006-12-08 2010-07-22 Canon Kabushiki Kaisha Exposure apparatus
US7993464B2 (en) * 2007-08-09 2011-08-09 Rave, Llc Apparatus and method for indirect surface cleaning
US11311917B2 (en) 2007-08-09 2022-04-26 Bruker Nano, Inc. Apparatus and method for contamination identification
US20090183322A1 (en) * 2008-01-17 2009-07-23 Banqiu Wu Electrostatic surface cleaning
CN101925860B (zh) * 2008-03-05 2012-12-12 阿尔卡特朗讯公司 用于制造光掩膜的方法和实现该方法的设备
NL1036769A1 (nl) * 2008-04-23 2009-10-26 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, cleaning system and method for cleaning a patterning device.
CN102246605B (zh) * 2008-12-16 2013-08-07 株式会社村田制作所 电路模块
JP5295808B2 (ja) * 2009-02-09 2013-09-18 東京エレクトロン株式会社 パーティクル付着防止方法及び被処理基板の搬送方法
KR20110092837A (ko) * 2010-02-10 2011-08-18 고려대학교 산학협력단 포토레지스트 패턴의 제거 방법
CN102419511A (zh) * 2011-06-07 2012-04-18 上海华力微电子有限公司 一种清除光刻掩模板表面微尘颗粒的方法
DE102013219585A1 (de) * 2013-09-27 2015-04-16 Carl Zeiss Smt Gmbh Optische Anordnung, insbesondere Plasma-Lichtquelle oder EUV-Lithographieanlage
CN105562406A (zh) * 2014-10-14 2016-05-11 洛阳瑞昌石油化工设备有限公司 一种金属腔体内壁除焦方法
TWI576657B (zh) * 2014-12-25 2017-04-01 台灣積體電路製造股份有限公司 光罩清潔設備以及光罩清潔方法
US10459352B2 (en) 2015-08-31 2019-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Mask cleaning
CN105537194B (zh) * 2016-01-04 2019-03-15 京东方科技集团股份有限公司 一种掩膜版的清洗装置及清洗方法、蒸镀设备
CN107626688B (zh) * 2016-07-19 2021-10-29 富泰华工业（深圳）有限公司 一种自动清洁屏幕的电子装置
CN107942616A (zh) * 2017-11-30 2018-04-20 上海华力微电子有限公司 去除掩模版上颗粒的装置和方法
US11062898B2 (en) * 2018-07-30 2021-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Particle removal apparatus, particle removal system and particle removal method
CN110299285B (zh) * 2019-06-19 2021-10-15 上海华力集成电路制造有限公司 一种改善晶圆表面缺陷的方法
US11256181B2 (en) * 2019-07-31 2022-02-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for removing particles in semiconductor manufacturing
CN111085494B (zh) * 2019-12-19 2022-01-04 天津智安微电子技术有限公司 一种掩膜版的清洗装置
US11815821B2 (en) * 2021-03-19 2023-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Module vessel with scrubber gutters sized to prevent overflow
CN116088275A (zh) * 2021-11-05 2023-05-09 邱俊荣 半导体工艺设备的清洁方法及清洁系统

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US3420710A (en) * 1964-09-03 1969-01-07 Du Pont Process and apparatus for cleaning webs utilizing a sonic air blast
SU383531A1 (ru) 1970-12-24 1973-05-23 I ВСЕСОЮЗНАЯ * •' " TPL'~"'n " rV'f''Jf*r'"lf ^ ft/
JPS5515620A (en) 1978-07-20 1980-02-02 Fujitsu Ltd Washing method
JPS61159730A (ja) 1985-01-08 1986-07-19 Oki Electric Ind Co Ltd エマルジヨンマスクのパ−テイクル除去方法
JPS6341855A (ja) 1986-08-07 1988-02-23 Mitsubishi Electric Corp フオトマスクのドライ洗浄方法
JP2828867B2 (ja) 1993-03-30 1998-11-25 住友重機械工業株式会社 洗浄方法および洗浄装置
JP3327492B2 (ja) 1993-09-30 2002-09-24 忠弘 大見 基体表面からの気相ゴミ除去装置及び除去方法並びにプロセス装置及びプロセスライン
JPH07142438A (ja) 1993-11-22 1995-06-02 Tadahiro Omi 洗浄装置、半導体製造装置及び半導体製造ライン
JP2666706B2 (ja) 1993-12-13 1997-10-22 日本電気株式会社 半導体処理装置
US5967156A (en) 1994-11-07 1999-10-19 Krytek Corporation Processing a surface
US6355397B1 (en) 1997-04-11 2002-03-12 Taiwan Semiconductor Manufacturing Company Method and apparatus for improving resist pattern developing
US6395102B1 (en) 1997-08-25 2002-05-28 Texas Instruments Incorporated Method and apparatus for in-situ reticle cleaning at photolithography tool
IT1298891B1 (it) * 1998-02-06 2000-02-07 Ca Te V Centro Tecnologie Del Impianto da vuoto portatile provvisto di precamera per la deposizione di film sottili su superfici anche inamovibili.
US6153044A (en) 1998-04-30 2000-11-28 Euv Llc Protection of lithographic components from particle contamination
JP3628939B2 (ja) 2000-06-27 2005-03-16 松下電器産業株式会社 露光方法及び露光装置
US6805751B2 (en) 2000-07-24 2004-10-19 Alkansas State University Method and apparatus for removal of minute particles from a surface using thermophoresis to prevent particle redeposition
DE60118669T2 (de) 2000-08-25 2007-01-11 Asml Netherlands B.V. Lithographischer Projektionsapparat
US20020096195A1 (en) 2001-01-04 2002-07-25 Applied Materials, Inc. Method and apparatus for critical flow particle removal
JP2002252261A (ja) 2001-02-23 2002-09-06 Nec Corp 半導体検査装置及び半導体露光装置
US20050217706A1 (en) * 2002-04-05 2005-10-06 Souvik Banerjee Fluid assisted cryogenic cleaning
US7101260B2 (en) * 2002-07-29 2006-09-05 Nanoclean Technologies, Inc. Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants
US6764385B2 (en) * 2002-07-29 2004-07-20 Nanoclean Technologies, Inc. Methods for resist stripping and cleaning surfaces substantially free of contaminants

Also Published As

Publication number Publication date
CN1494956A (zh) 2004-05-12
DE60310498T2 (de) 2007-10-04
TWI224527B (en) 2004-12-01
US20040103917A1 (en) 2004-06-03
JP2004102293A (ja) 2004-04-02
SG111152A1 (en) 2005-05-30
KR100563102B1 (ko) 2006-03-27
KR20040030294A (ko) 2004-04-09
TW200410764A (en) 2004-07-01
US7306680B2 (en) 2007-12-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee