DE60300022D1 - Feldemissionsanzeigevorrichtung mit Triodenstruktur mit Kohlenstoffnanoröhren und Verfahren zur deren Herstellung - Google Patents
Feldemissionsanzeigevorrichtung mit Triodenstruktur mit Kohlenstoffnanoröhren und Verfahren zur deren HerstellungInfo
- Publication number
- DE60300022D1 DE60300022D1 DE60300022T DE60300022T DE60300022D1 DE 60300022 D1 DE60300022 D1 DE 60300022D1 DE 60300022 T DE60300022 T DE 60300022T DE 60300022 T DE60300022 T DE 60300022T DE 60300022 D1 DE60300022 D1 DE 60300022D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- display device
- carbon nanotubes
- field emission
- emission display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/952—Display
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0003687A KR100413815B1 (ko) | 2002-01-22 | 2002-01-22 | 삼극구조를 가지는 탄소나노튜브 전계방출소자 및 그제조방법 |
KR2002003687 | 2002-01-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60300022D1 true DE60300022D1 (de) | 2004-09-23 |
DE60300022T2 DE60300022T2 (de) | 2005-08-18 |
Family
ID=19718735
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60300022T Expired - Lifetime DE60300022T2 (de) | 2002-01-22 | 2003-01-22 | Feldemissionsanzeigevorrichtung mit Triodenstruktur mit Kohlenstoffnanoröhren und Verfahren zur deren Herstellung |
Country Status (5)
Country | Link |
---|---|
US (2) | US6812480B2 (de) |
EP (1) | EP1329929B1 (de) |
JP (2) | JP4307856B2 (de) |
KR (1) | KR100413815B1 (de) |
DE (1) | DE60300022T2 (de) |
Families Citing this family (50)
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KR100413815B1 (ko) * | 2002-01-22 | 2004-01-03 | 삼성에스디아이 주식회사 | 삼극구조를 가지는 탄소나노튜브 전계방출소자 및 그제조방법 |
JP3465705B2 (ja) * | 2002-04-02 | 2003-11-10 | ソニー株式会社 | 冷陰極電界電子放出素子の製造方法、及び、冷陰極電界電子放出表示装置の製造方法 |
US6777869B2 (en) * | 2002-04-10 | 2004-08-17 | Si Diamond Technology, Inc. | Transparent emissive display |
US20070003472A1 (en) * | 2003-03-24 | 2007-01-04 | Tolt Zhidan L | Electron emitting composite based on regulated nano-structures and a cold electron source using the composite |
CN1287413C (zh) * | 2003-03-26 | 2006-11-29 | 清华大学 | 一种场发射显示器 |
TW591716B (en) * | 2003-05-26 | 2004-06-11 | Prime View Int Co Ltd | A structure of a structure release and manufacturing the same |
KR100862655B1 (ko) * | 2003-08-12 | 2008-10-10 | 삼성에스디아이 주식회사 | 탄소나노튜브 에미터를 구비하는 전계 방출 디스플레이 및그 제조 방법 |
US7459839B2 (en) * | 2003-12-05 | 2008-12-02 | Zhidan Li Tolt | Low voltage electron source with self aligned gate apertures, and luminous display using the electron source |
KR20050062742A (ko) * | 2003-12-22 | 2005-06-27 | 삼성에스디아이 주식회사 | 전계방출소자와, 이를 적용한 표시소자 및 그 제조방법 |
KR101018344B1 (ko) * | 2004-01-08 | 2011-03-04 | 삼성에스디아이 주식회사 | 전계방출형 백라이트 유니트 및 그 구동 방법과 하부패널의 제조 방법 |
KR20050078327A (ko) * | 2004-01-29 | 2005-08-05 | 삼성에스디아이 주식회사 | 전계 방출 표시 소자와 이의 제조 방법 |
KR20050082805A (ko) * | 2004-02-20 | 2005-08-24 | 삼성에스디아이 주식회사 | 전계 방출 표시 소자와 이의 제조 방법 |
KR101009983B1 (ko) * | 2004-02-25 | 2011-01-21 | 삼성에스디아이 주식회사 | 전자 방출 표시 소자 |
KR20050096478A (ko) | 2004-03-30 | 2005-10-06 | 삼성에스디아이 주식회사 | 전자 방출 표시 장치 및 그 제조 방법 |
KR20050096534A (ko) | 2004-03-31 | 2005-10-06 | 삼성에스디아이 주식회사 | 전자 방출 표시 장치의 캐소드 기판 및 그 제조 방법 |
KR101022654B1 (ko) * | 2004-04-29 | 2011-03-22 | 삼성에스디아이 주식회사 | 전자 방출 소자 및 이의 제조 방법 |
KR101022656B1 (ko) * | 2004-05-25 | 2011-03-22 | 삼성에스디아이 주식회사 | 전자 방출 표시 장치와, 이의 제조 방법 |
CN1707724A (zh) * | 2004-06-07 | 2005-12-14 | 清华大学 | 场发射装置及其制造方法 |
KR20060009681A (ko) * | 2004-07-26 | 2006-02-01 | 삼성에스디아이 주식회사 | 탄소나노튜브 에미터를 구비하는 전계 방출 디스플레이 및그 제조 방법 |
JP4886184B2 (ja) * | 2004-10-26 | 2012-02-29 | キヤノン株式会社 | 画像表示装置 |
JP4817641B2 (ja) * | 2004-10-26 | 2011-11-16 | キヤノン株式会社 | 画像形成装置 |
TWI271766B (en) * | 2004-12-10 | 2007-01-21 | Ind Tech Res Inst | Composite substrate able to emit light from both sides |
KR100638668B1 (ko) * | 2005-01-07 | 2006-10-30 | 삼성전기주식회사 | 전계방출 에미터 어레이 및 그 제조 방법 |
KR100590579B1 (ko) * | 2005-02-01 | 2006-06-19 | 삼성에스디아이 주식회사 | 탄소나노튜브 에미터를 구비한 전계방출소자의 제조방법 |
KR20060089841A (ko) * | 2005-02-04 | 2006-08-09 | 삼성에스디아이 주식회사 | 전계방출소자 및 그 제조방법 |
KR20060104655A (ko) * | 2005-03-31 | 2006-10-09 | 삼성에스디아이 주식회사 | 전자 방출 소자 |
TWI435358B (zh) * | 2005-08-10 | 2014-04-21 | Pureron Japan Co Ltd | A carbon film having a shape suitable for the emission of electric field, a carbon film structure, and an electron emitter |
JP2007087934A (ja) * | 2005-08-24 | 2007-04-05 | Canon Inc | 電子源及び画像表示装置 |
US20070120462A1 (en) * | 2005-09-30 | 2007-05-31 | Kim Il-Hwan | Electron emission device, method of manufacturing the electron emission device, and electron emission display having the electron emission device |
KR100724369B1 (ko) * | 2005-10-19 | 2007-06-04 | 엘지전자 주식회사 | 자외선 차폐층을 구비한 전계방출소자 및 그 제조 방법 |
US7413924B2 (en) | 2005-10-31 | 2008-08-19 | Motorola, Inc. | Plasma etch process for defining catalyst pads on nanoemissive displays |
KR20070046670A (ko) * | 2005-10-31 | 2007-05-03 | 삼성에스디아이 주식회사 | 전자 방출 디바이스 및 이를 구비한 전자 방출 표시디바이스 |
JP4947336B2 (ja) * | 2005-11-04 | 2012-06-06 | 双葉電子工業株式会社 | 電界放出素子 |
KR100759399B1 (ko) * | 2006-06-16 | 2007-09-19 | 삼성에스디아이 주식회사 | 발광 장치 및 이 발광 장치를 백 라이트 유닛으로 사용하는액정 표시 장치 |
TWI334154B (en) | 2006-05-19 | 2010-12-01 | Samsung Sdi Co Ltd | Light emission device and display device |
KR100759400B1 (ko) * | 2006-06-15 | 2007-09-19 | 삼성에스디아이 주식회사 | 발광 장치 및 이 발광 장치를 백 라이트 유닛으로 사용하는액정 표시 장치 |
CN101110308B (zh) * | 2006-07-19 | 2011-05-04 | 清华大学 | 场发射阴极的制造方法 |
KR100785028B1 (ko) * | 2006-11-06 | 2007-12-12 | 삼성전자주식회사 | 전계방출소자의 제조방법 |
KR100787239B1 (ko) * | 2007-01-30 | 2007-12-21 | 한국기계연구원 | 탄소나노튜브 투명 전도체 |
KR20100100904A (ko) | 2007-11-26 | 2010-09-15 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 자외선 광 차단 유전체 층을 포함하는 캐소드 어셈블리 |
US8018675B2 (en) * | 2008-03-06 | 2011-09-13 | Tdk Corporation | Thin film magnetic head |
KR101301080B1 (ko) * | 2008-03-17 | 2013-09-03 | 삼성전자주식회사 | 삼극 전계방출소자의 제조방법 |
JP5151667B2 (ja) * | 2008-05-12 | 2013-02-27 | パナソニック株式会社 | マトリックス型冷陰極電子源装置 |
KR100943971B1 (ko) * | 2008-06-30 | 2010-02-26 | 한국과학기술원 | 탄소 미세 구조물을 갖는 전계방출 어레이 및 그 제조방법 |
TW201019370A (en) * | 2008-11-14 | 2010-05-16 | Tatung Co | Field emission cathode plate and method for manufacturing the same |
FR2946456A1 (fr) * | 2009-06-05 | 2010-12-10 | Thales Sa | Source de faisceau electronique collimate a cathode froide |
CN102097272B (zh) * | 2011-01-10 | 2012-06-27 | 福州大学 | 阳栅同基板的三极结构场致发射显示器 |
US9053890B2 (en) | 2013-08-02 | 2015-06-09 | University Health Network | Nanostructure field emission cathode structure and method for making |
CN109767961B (zh) * | 2018-12-28 | 2022-09-23 | 中国电子科技集团公司第十二研究所 | 带屏蔽结构的尖锥阵列型场发射电子源及其制作方法 |
CN114512380B (zh) * | 2022-01-28 | 2023-03-28 | 电子科技大学 | 一种栅极自对准的垂直纳米空气沟道三极管制备方法 |
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US5442193A (en) * | 1994-02-22 | 1995-08-15 | Motorola | Microelectronic field emission device with breakdown inhibiting insulated gate electrode |
JPH0992130A (ja) * | 1995-09-25 | 1997-04-04 | Olympus Optical Co Ltd | 電荷発生器及びその製造方法 |
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JP3836539B2 (ja) * | 1996-07-12 | 2006-10-25 | 双葉電子工業株式会社 | 電界放出素子およびその製造方法 |
JP3323750B2 (ja) * | 1996-08-08 | 2002-09-09 | キヤノン株式会社 | 電子放出素子及びそれを備えた電子源並びに画像形成装置 |
JP3843154B2 (ja) * | 1996-09-25 | 2006-11-08 | 関西ペイント株式会社 | 光重合性組成物 |
JP3569135B2 (ja) * | 1998-09-09 | 2004-09-22 | 株式会社東芝 | 電界放出陰極の製造方法 |
JP2000215792A (ja) * | 1999-01-20 | 2000-08-04 | Sony Corp | 平面型表示装置の製造方法 |
JP2000251614A (ja) * | 1999-02-24 | 2000-09-14 | Futaba Corp | 電界放出素子及びその製造方法 |
JP2000353467A (ja) | 1999-04-09 | 2000-12-19 | Nec Corp | 冷陰極装置の製造方法 |
JP3585396B2 (ja) | 1999-06-02 | 2004-11-04 | シャープ株式会社 | 冷陰極の製造方法 |
JP2000353466A (ja) | 1999-06-09 | 2000-12-19 | Sony Corp | 電子放出素子およびその製造方法、並びに表示装置およびその製造方法 |
JP2001167690A (ja) | 1999-12-09 | 2001-06-22 | Sony Corp | 冷陰極電界電子放出素子及びその製造方法、並びに、冷陰極電界電子放出表示装置の製造方法 |
US20020036452A1 (en) | 1999-12-21 | 2002-03-28 | Masakazu Muroyama | Electron emission device, cold cathode field emission device and method for the production thereof, and cold cathode field emission display and method for the production thereof |
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JP2001234163A (ja) * | 2000-02-25 | 2001-08-28 | Sony Corp | 発光性結晶粒子、発光性結晶粒子組成物、表示用パネル及び平面型表示装置 |
US6682383B2 (en) * | 2000-05-17 | 2004-01-27 | Electronics And Telecommunications Research Institute | Cathode structure for field emission device and method of fabricating the same |
US7449081B2 (en) * | 2000-06-21 | 2008-11-11 | E. I. Du Pont De Nemours And Company | Process for improving the emission of electron field emitters |
EP1221710B1 (de) | 2001-01-05 | 2004-10-27 | Samsung SDI Co. Ltd. | Verfahren zur Herstellung einer Kohlenstoffnanoröhren-Feldemissionsanordnung mit Triodenstruktur |
US6448701B1 (en) * | 2001-03-09 | 2002-09-10 | The United States Of America As Represented By The Secretary Of The Navy | Self-aligned integrally gated nanofilament field emitter cell and array |
KR100413815B1 (ko) * | 2002-01-22 | 2004-01-03 | 삼성에스디아이 주식회사 | 삼극구조를 가지는 탄소나노튜브 전계방출소자 및 그제조방법 |
US6670629B1 (en) * | 2002-09-06 | 2003-12-30 | Ge Medical Systems Global Technology Company, Llc | Insulated gate field emitter array |
-
2002
- 2002-01-22 KR KR10-2002-0003687A patent/KR100413815B1/ko not_active IP Right Cessation
-
2003
- 2003-01-22 DE DE60300022T patent/DE60300022T2/de not_active Expired - Lifetime
- 2003-01-22 EP EP03250389A patent/EP1329929B1/de not_active Expired - Lifetime
- 2003-01-22 JP JP2003013323A patent/JP4307856B2/ja not_active Expired - Fee Related
- 2003-01-22 US US10/347,622 patent/US6812480B2/en not_active Expired - Fee Related
-
2004
- 2004-09-27 US US10/949,524 patent/US7527988B2/en not_active Expired - Fee Related
-
2008
- 2008-10-29 JP JP2008278142A patent/JP4512156B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7527988B2 (en) | 2009-05-05 |
EP1329929A1 (de) | 2003-07-23 |
JP4307856B2 (ja) | 2009-08-05 |
JP2003234062A (ja) | 2003-08-22 |
JP4512156B2 (ja) | 2010-07-28 |
EP1329929B1 (de) | 2004-08-18 |
US20030141495A1 (en) | 2003-07-31 |
KR20030063529A (ko) | 2003-07-31 |
JP2009049019A (ja) | 2009-03-05 |
US20050040752A1 (en) | 2005-02-24 |
US6812480B2 (en) | 2004-11-02 |
DE60300022T2 (de) | 2005-08-18 |
KR100413815B1 (ko) | 2004-01-03 |
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