DE60201689D1 - Verfahren zur Herstellung einer Kohlenstoffnanoröhren-Feldemissionsanordnung mit Triodenstruktur - Google Patents
Verfahren zur Herstellung einer Kohlenstoffnanoröhren-Feldemissionsanordnung mit TriodenstrukturInfo
- Publication number
- DE60201689D1 DE60201689D1 DE60201689T DE60201689T DE60201689D1 DE 60201689 D1 DE60201689 D1 DE 60201689D1 DE 60201689 T DE60201689 T DE 60201689T DE 60201689 T DE60201689 T DE 60201689T DE 60201689 D1 DE60201689 D1 DE 60201689D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- carbon nanotube
- field emission
- emission device
- nanotube field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20010000680 | 2001-01-05 | ||
KR2001000680 | 2001-01-05 | ||
KR10-2001-0083353A KR100442840B1 (ko) | 2001-01-05 | 2001-12-22 | 삼극관 탄소나노튜브 전계방출 어레이의 제조 방법 |
KR2001083353 | 2001-12-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60201689D1 true DE60201689D1 (de) | 2004-12-02 |
DE60201689T2 DE60201689T2 (de) | 2005-11-03 |
Family
ID=26638703
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60201689T Expired - Lifetime DE60201689T2 (de) | 2001-01-05 | 2002-01-04 | Verfahren zur Herstellung einer Kohlenstoffnanoröhren-Feldemissionsanordnung mit Triodenstruktur |
Country Status (4)
Country | Link |
---|---|
US (1) | US6699642B2 (de) |
EP (1) | EP1221710B1 (de) |
JP (1) | JP3863781B2 (de) |
DE (1) | DE60201689T2 (de) |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW502395B (en) * | 2001-08-29 | 2002-09-11 | Ind Tech Res Inst | Manufacturing method for large-area carbon nano-tube field emission display in low cost |
US6866989B2 (en) * | 2001-09-07 | 2005-03-15 | Canon Kabushiki Kaisha | Method for forming patterned insulating elements and methods for making electron source and image display device |
KR100413815B1 (ko) * | 2002-01-22 | 2004-01-03 | 삼성에스디아이 주식회사 | 삼극구조를 가지는 탄소나노튜브 전계방출소자 및 그제조방법 |
US8552632B2 (en) * | 2002-03-20 | 2013-10-08 | Copytele, Inc. | Active matrix phosphor cold cathode display |
JP3465705B2 (ja) | 2002-04-02 | 2003-11-10 | ソニー株式会社 | 冷陰極電界電子放出素子の製造方法、及び、冷陰極電界電子放出表示装置の製造方法 |
US20050148174A1 (en) * | 2002-05-06 | 2005-07-07 | Infineon Technologies Ag | Contact-connection of nanotubes |
US7554255B2 (en) | 2002-07-30 | 2009-06-30 | Postech Foundation | Electric field emission device having a triode structure fabricated by using an anodic oxidation process and method for fabricating same |
AU2003259517A1 (en) * | 2002-10-07 | 2004-04-23 | Koninklijke Philips Electronics N.V. | Field emission device with self-aligned gate electrode structure, and method of manufacturing same |
US7044822B2 (en) * | 2002-12-20 | 2006-05-16 | Samsung Sdi Co., Ltd. | Method of manufacturing a field emission device utilizing the sacrificial layer |
US20060124467A1 (en) * | 2003-05-20 | 2006-06-15 | Industrial Technology Research Institute | Metal nanodot arrays and fabrication methods thereof |
JP4230393B2 (ja) * | 2003-06-02 | 2009-02-25 | 三菱電機株式会社 | 電界放出型表示装置 |
KR100862655B1 (ko) * | 2003-08-12 | 2008-10-10 | 삼성에스디아이 주식회사 | 탄소나노튜브 에미터를 구비하는 전계 방출 디스플레이 및그 제조 방법 |
TWI231521B (en) * | 2003-09-25 | 2005-04-21 | Ind Tech Res Inst | A carbon nanotubes field emission display and the fabricating method of which |
US20050116214A1 (en) | 2003-10-31 | 2005-06-02 | Mammana Victor P. | Back-gated field emission electron source |
KR20050051041A (ko) * | 2003-11-26 | 2005-06-01 | 삼성에스디아이 주식회사 | 카본나노튜브의 형성방법 |
KR20050058617A (ko) * | 2003-12-12 | 2005-06-17 | 삼성에스디아이 주식회사 | 전계방출소자와, 이를 적용한 표시소자 및 그 제조방법 |
US7125308B2 (en) * | 2003-12-18 | 2006-10-24 | Nano-Proprietary, Inc. | Bead blast activation of carbon nanotube cathode |
KR20050062742A (ko) * | 2003-12-22 | 2005-06-27 | 삼성에스디아이 주식회사 | 전계방출소자와, 이를 적용한 표시소자 및 그 제조방법 |
KR20050082805A (ko) * | 2004-02-20 | 2005-08-24 | 삼성에스디아이 주식회사 | 전계 방출 표시 소자와 이의 제조 방법 |
KR20050096534A (ko) * | 2004-03-31 | 2005-10-06 | 삼성에스디아이 주식회사 | 전자 방출 표시 장치의 캐소드 기판 및 그 제조 방법 |
US20050233263A1 (en) * | 2004-04-20 | 2005-10-20 | Applied Materials, Inc. | Growth of carbon nanotubes at low temperature |
KR20050104643A (ko) * | 2004-04-29 | 2005-11-03 | 삼성에스디아이 주식회사 | 전자 방출 표시장치용 캐소드 기판, 전자 방출 표시장치및 이의 제조 방법 |
KR20050111708A (ko) * | 2004-05-22 | 2005-11-28 | 삼성에스디아이 주식회사 | 전계방출 표시장치 및 그 제조방법 |
KR20050111706A (ko) * | 2004-05-22 | 2005-11-28 | 삼성에스디아이 주식회사 | 전계방출 표시소자 및 그 제조방법 |
US7834530B2 (en) * | 2004-05-27 | 2010-11-16 | California Institute Of Technology | Carbon nanotube high-current-density field emitters |
KR20060009681A (ko) * | 2004-07-26 | 2006-02-01 | 삼성에스디아이 주식회사 | 탄소나노튜브 에미터를 구비하는 전계 방출 디스플레이 및그 제조 방법 |
KR20060012782A (ko) * | 2004-08-04 | 2006-02-09 | 삼성에스디아이 주식회사 | 전계방출소자와, 이를 적용한 전계방출 표시소자 |
US7736209B2 (en) * | 2004-09-10 | 2010-06-15 | Applied Nanotech Holdings, Inc. | Enhanced electron field emission from carbon nanotubes without activation |
KR20060080728A (ko) * | 2005-01-06 | 2006-07-11 | 삼성에스디아이 주식회사 | 탄소나노튜브 합성을 위한 촉매층의 패터닝 방법 및 이를이용한 전계방출소자의 제조방법 |
KR100590579B1 (ko) * | 2005-02-01 | 2006-06-19 | 삼성에스디아이 주식회사 | 탄소나노튜브 에미터를 구비한 전계방출소자의 제조방법 |
US7701128B2 (en) * | 2005-02-04 | 2010-04-20 | Industrial Technology Research Institute | Planar light unit using field emitters and method for fabricating the same |
KR20060095318A (ko) * | 2005-02-28 | 2006-08-31 | 삼성에스디아이 주식회사 | 전자 방출 소자와 이의 제조 방법 |
KR20060104655A (ko) * | 2005-03-31 | 2006-10-09 | 삼성에스디아이 주식회사 | 전자 방출 소자 |
KR100710592B1 (ko) * | 2005-07-18 | 2007-04-24 | 일진다이아몬드(주) | 전계 방출 장치 |
KR100723383B1 (ko) * | 2005-08-10 | 2007-05-30 | 삼성에스디아이 주식회사 | 전계방출형 백라이트 유닛 |
US7649665B2 (en) | 2005-08-24 | 2010-01-19 | The Trustees Of Boston College | Apparatus and methods for optical switching using nanoscale optics |
US7995777B2 (en) * | 2005-10-03 | 2011-08-09 | Xun Yu | Thin film transparent acoustic transducer |
KR101082440B1 (ko) * | 2005-10-04 | 2011-11-11 | 삼성에스디아이 주식회사 | 전자 방출 소자, 이를 구비한 전자 방출 디스플레이 장치및 그 제조 방법 |
TWI333228B (en) * | 2006-01-13 | 2010-11-11 | Ind Tech Res Inst | Method of fabricating field emission display device and cathode plate thereof |
KR100784997B1 (ko) * | 2006-01-14 | 2007-12-12 | 삼성에스디아이 주식회사 | 전자 방출 소자의 제조방법, 이에 의하여 제조된 전자 방출소자, 이를 적용한 백라이트 장치 및 전자 방출디스플레이 장치 |
JP5102968B2 (ja) * | 2006-04-14 | 2012-12-19 | 株式会社日立ハイテクノロジーズ | 導電性針およびその製造方法 |
KR101118698B1 (ko) * | 2007-05-29 | 2012-03-12 | 전자빔기술센터 주식회사 | 시엔티 팁을 이용한 전자 칼럼 및 시엔티 팁을 정렬하는방법 |
FR2917191B1 (fr) | 2007-06-11 | 2010-06-11 | Commissariat Energie Atomique | Dispositif d'eclairage pour ecran a cristal liquide |
KR100881954B1 (ko) * | 2007-11-09 | 2009-02-06 | 한국전자통신연구원 | 반응성 스퍼터링 증착 장치 |
KR100913132B1 (ko) * | 2007-12-17 | 2009-08-19 | 한국전자통신연구원 | 전계 방출형 백라이트 유닛과 이에 이용되는 캐소드 구조물및 이의 제조 방법 |
US8039380B2 (en) * | 2008-06-27 | 2011-10-18 | Commissariat A L'energie Atomique | Procedure for obtaining nanotube layers of carbon with conductor or semiconductor substrate |
WO2010022218A1 (en) * | 2008-08-22 | 2010-02-25 | E. I. Du Pont De Nemours And Company | Method of making air-fired cathode assemblies in field emission devices |
TW201019370A (en) * | 2008-11-14 | 2010-05-16 | Tatung Co | Field emission cathode plate and method for manufacturing the same |
KR101267277B1 (ko) * | 2011-05-19 | 2013-05-24 | 한국기계연구원 | 유연기판의 금속배선 형성방법 |
US8569121B2 (en) | 2011-11-01 | 2013-10-29 | International Business Machines Corporation | Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making same |
CN103288033B (zh) * | 2012-02-23 | 2016-02-17 | 清华大学 | 碳纳米管微尖结构的制备方法 |
CN103295854B (zh) * | 2012-02-23 | 2015-08-26 | 清华大学 | 碳纳米管微尖结构及其制备方法 |
CN103295853B (zh) * | 2012-02-23 | 2015-12-09 | 清华大学 | 场发射电子源及应用该场发射电子源的场发射装置 |
CN103367073B (zh) * | 2012-03-29 | 2016-09-14 | 清华大学 | 碳纳米管场发射体 |
CN103367074B (zh) * | 2012-03-29 | 2015-08-26 | 清华大学 | 碳纳米管场发射体的制备方法 |
CN112882351A (zh) * | 2021-01-20 | 2021-06-01 | 桂林理工大学 | 用于电子束投影光刻系统的图案化发射器及其制造方法 |
CN114512380B (zh) * | 2022-01-28 | 2023-03-28 | 电子科技大学 | 一种栅极自对准的垂直纳米空气沟道三极管制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5872422A (en) | 1995-12-20 | 1999-02-16 | Advanced Technology Materials, Inc. | Carbon fiber-based field emission devices |
KR100365444B1 (ko) * | 1996-09-18 | 2004-01-24 | 가부시끼가이샤 도시바 | 진공마이크로장치와이를이용한화상표시장치 |
JP2000348601A (ja) * | 1999-06-07 | 2000-12-15 | Sony Corp | 電子放出源及びその製造方法、並びにその電子放出源を用いたディスプレイ装置 |
JP3597740B2 (ja) * | 1999-11-10 | 2004-12-08 | シャープ株式会社 | 冷陰極及びその製造方法 |
JP3730476B2 (ja) | 2000-03-31 | 2006-01-05 | 株式会社東芝 | 電界放出型冷陰極及びその製造方法 |
US6486599B2 (en) * | 2001-03-20 | 2002-11-26 | Industrial Technology Research Institute | Field emission display panel equipped with two cathodes and an anode |
-
2002
- 2002-01-04 EP EP02250035A patent/EP1221710B1/de not_active Expired - Lifetime
- 2002-01-04 DE DE60201689T patent/DE60201689T2/de not_active Expired - Lifetime
- 2002-01-04 US US10/035,438 patent/US6699642B2/en not_active Expired - Fee Related
- 2002-01-07 JP JP2002000681A patent/JP3863781B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20020094494A1 (en) | 2002-07-18 |
JP3863781B2 (ja) | 2006-12-27 |
EP1221710A2 (de) | 2002-07-10 |
EP1221710B1 (de) | 2004-10-27 |
US6699642B2 (en) | 2004-03-02 |
JP2002245928A (ja) | 2002-08-30 |
DE60201689T2 (de) | 2005-11-03 |
EP1221710A3 (de) | 2002-11-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |