DE60321883D1 - Verfahren zur Herstellung einer Vorrichtung - Google Patents

Verfahren zur Herstellung einer Vorrichtung

Info

Publication number
DE60321883D1
DE60321883D1 DE60321883T DE60321883T DE60321883D1 DE 60321883 D1 DE60321883 D1 DE 60321883D1 DE 60321883 T DE60321883 T DE 60321883T DE 60321883 T DE60321883 T DE 60321883T DE 60321883 D1 DE60321883 D1 DE 60321883D1
Authority
DE
Germany
Prior art keywords
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60321883T
Other languages
English (en)
Inventor
Martin Lowisch
Marcel Mathijs Theodo Dierichs
Ingen Schenau Koen Van
Der Laan Hans Van
Martinus Hendrikus An Leenders
Elaine Mcgoo
Uwe Mickan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Application granted granted Critical
Publication of DE60321883D1 publication Critical patent/DE60321883D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
DE60321883T 2002-11-28 2003-11-25 Verfahren zur Herstellung einer Vorrichtung Expired - Fee Related DE60321883D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02258208 2002-11-28

Publications (1)

Publication Number Publication Date
DE60321883D1 true DE60321883D1 (de) 2008-08-14

Family

ID=32695570

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60321883T Expired - Fee Related DE60321883D1 (de) 2002-11-28 2003-11-25 Verfahren zur Herstellung einer Vorrichtung

Country Status (7)

Country Link
US (1) US7042550B2 (de)
JP (1) JP4204959B2 (de)
KR (1) KR100571369B1 (de)
CN (1) CN1530747A (de)
DE (1) DE60321883D1 (de)
SG (1) SG135931A1 (de)
TW (1) TWI257532B (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG110121A1 (en) * 2003-09-10 2005-04-28 Asml Netherlands Bv Method for exposing a substrate and lithographic projection apparatus
KR101050320B1 (ko) 2003-09-17 2011-07-19 칼 짜이스 에스엠테 게엠베하 마스크, 리소그래피 장치와 반도체 구성요소
US8027813B2 (en) * 2004-02-20 2011-09-27 Nikon Precision, Inc. Method and system for reconstructing aberrated image profiles through simulation
US8304180B2 (en) * 2004-09-14 2012-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG124407A1 (en) * 2005-02-03 2006-08-30 Asml Netherlands Bv Method of generating a photolithography patterningdevice, computer program, patterning device, meth od of determining the position of a target image on or proximate a substrate, measurement device, and lithographic apparatus
JP2006237184A (ja) * 2005-02-24 2006-09-07 Sony Corp マスク補正方法および露光用マスク
JP2007073666A (ja) * 2005-09-06 2007-03-22 Sony Corp マスク補正方法、マスク製造方法および露光用マスク
DE602005021127D1 (de) * 2005-12-09 2010-06-17 Imec Verfahren und Vorrichtungen zur Lithographie
JP2007227570A (ja) * 2006-02-22 2007-09-06 Toshiba Corp 製造装置調整システム及び製造装置調整方法
US7713665B2 (en) * 2006-03-29 2010-05-11 Asml Netherlands B.V. Lithographic apparatus and patterning device
JP2007273560A (ja) * 2006-03-30 2007-10-18 Toshiba Corp 光強度分布シミュレーション方法
JP4664232B2 (ja) * 2006-05-16 2011-04-06 東京エレクトロン株式会社 熱処理板の温度設定方法，プログラム，プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
JP4664233B2 (ja) * 2006-05-22 2011-04-06 東京エレクトロン株式会社 熱処理板の温度設定方法，プログラム，プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
JP4850664B2 (ja) * 2006-11-02 2012-01-11 東京エレクトロン株式会社 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
JP4796476B2 (ja) * 2006-11-07 2011-10-19 東京エレクトロン株式会社 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
KR100809717B1 (ko) * 2007-01-12 2008-03-06 삼성전자주식회사 더블 패터닝된 패턴의 전기적 특성을 콘트롤할 수 있는반도체 소자 및 그의 패턴 콘트롤방법
US20080180696A1 (en) * 2007-01-30 2008-07-31 Sony Corporation Process window for EUV lithography
ATE537484T1 (de) * 2007-02-23 2011-12-15 Imec Systeme und verfahren zur uv-lithographie
US8975599B2 (en) * 2007-05-03 2015-03-10 Asml Netherlands B.V. Image sensor, lithographic apparatus comprising an image sensor and use of an image sensor in a lithographic apparatus
JP4975532B2 (ja) * 2007-07-02 2012-07-11 ルネサスエレクトロニクス株式会社 反射型露光方法
US7910863B2 (en) 2007-09-20 2011-03-22 Tokyo Electron Limited Temperature setting method of thermal processing plate, computer-readable recording medium recording program thereon, and temperature setting apparatus for thermal processing plate
NL2003806A (en) * 2008-12-15 2010-06-16 Asml Netherlands Bv Method for a lithographic apparatus.
KR101675380B1 (ko) 2010-02-19 2016-11-14 삼성전자주식회사 오버레이 보정방법 및 그를 이용한 반도체 제조방법
DE102010029651A1 (de) * 2010-06-02 2011-12-08 Carl Zeiss Smt Gmbh Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern
NL2008310A (en) 2011-04-05 2012-10-08 Asml Netherlands Bv Lithographic method and assembly.
JP2012142619A (ja) * 2012-04-11 2012-07-26 Renesas Electronics Corp 反射型露光方法
DE102012207377A1 (de) * 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
US8663878B2 (en) * 2012-07-05 2014-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Mask and method for forming the same
JP6033987B1 (ja) * 2014-12-19 2016-11-30 Hoya株式会社 マスクブランク用基板、マスクブランク及びこれらの製造方法、転写用マスクの製造方法並びに半導体デバイスの製造方法
US20170199511A1 (en) * 2016-01-12 2017-07-13 Globalfoundries Inc. Signal detection metholodogy for fabrication control
CN109478021B (zh) * 2016-07-11 2021-01-01 Asml荷兰有限公司 用于确定性能参数的指纹的方法和设备
EP3963404B1 (de) * 2019-04-30 2023-01-25 ASML Netherlands B.V. Verfahren und vorrichtung zur photolithografischen bildgebung

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6078380A (en) * 1991-10-08 2000-06-20 Nikon Corporation Projection exposure apparatus and method involving variation and correction of light intensity distributions, detection and control of imaging characteristics, and control of exposure
JP3303436B2 (ja) * 1993-05-14 2002-07-22 キヤノン株式会社 投影露光装置及び半導体素子の製造方法
US6115108A (en) * 1998-12-04 2000-09-05 Advanced Micro Devices, Inc. Illumination modification scheme synthesis using lens characterization data
US6057914A (en) * 1999-04-09 2000-05-02 Advanced Micro Devices, Inc. Method for detecting and identifying a lens aberration by measurement of sidewall angles by atomic force microscopy
EP1246014A1 (de) * 2001-03-30 2002-10-02 ASML Netherlands B.V. Lithographischer Apparat
EP1251402B1 (de) 2001-03-30 2007-10-24 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
EP1271247A1 (de) 2001-06-20 2003-01-02 ASML Netherlands B.V. Verfahren und Maske für Projektionsbelichtung
US6879374B2 (en) * 2001-06-20 2005-04-12 Asml Netherlands B.V. Device manufacturing method, device manufactured thereby and a mask for use in the method
US6673638B1 (en) * 2001-11-14 2004-01-06 Kla-Tencor Corporation Method and apparatus for the production of process sensitive lithographic features
US6986971B2 (en) * 2002-11-08 2006-01-17 Freescale Semiconductor, Inc. Reflective mask useful for transferring a pattern using extreme ultraviolet (EUV) radiation and method of making the same

Also Published As

Publication number Publication date
KR20040047703A (ko) 2004-06-05
KR100571369B1 (ko) 2006-04-14
US7042550B2 (en) 2006-05-09
TW200426522A (en) 2004-12-01
SG135931A1 (en) 2007-10-29
TWI257532B (en) 2006-07-01
JP4204959B2 (ja) 2009-01-07
US20040137677A1 (en) 2004-07-15
CN1530747A (zh) 2004-09-22
JP2004179663A (ja) 2004-06-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee