DE60321883D1 - Verfahren zur Herstellung einer Vorrichtung - Google Patents
Verfahren zur Herstellung einer VorrichtungInfo
- Publication number
- DE60321883D1 DE60321883D1 DE60321883T DE60321883T DE60321883D1 DE 60321883 D1 DE60321883 D1 DE 60321883D1 DE 60321883 T DE60321883 T DE 60321883T DE 60321883 T DE60321883 T DE 60321883T DE 60321883 D1 DE60321883 D1 DE 60321883D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02258208 | 2002-11-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60321883D1 true DE60321883D1 (de) | 2008-08-14 |
Family
ID=32695570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60321883T Expired - Fee Related DE60321883D1 (de) | 2002-11-28 | 2003-11-25 | Verfahren zur Herstellung einer Vorrichtung |
Country Status (7)
Country | Link |
---|---|
US (1) | US7042550B2 (de) |
JP (1) | JP4204959B2 (de) |
KR (1) | KR100571369B1 (de) |
CN (1) | CN1530747A (de) |
DE (1) | DE60321883D1 (de) |
SG (1) | SG135931A1 (de) |
TW (1) | TWI257532B (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG110121A1 (en) * | 2003-09-10 | 2005-04-28 | Asml Netherlands Bv | Method for exposing a substrate and lithographic projection apparatus |
JP4402656B2 (ja) | 2003-09-17 | 2010-01-20 | カール・ツァイス・エスエムティー・アーゲー | マスク及びリソグラフィ装置 |
US8027813B2 (en) * | 2004-02-20 | 2011-09-27 | Nikon Precision, Inc. | Method and system for reconstructing aberrated image profiles through simulation |
US8304180B2 (en) * | 2004-09-14 | 2012-11-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG124407A1 (en) * | 2005-02-03 | 2006-08-30 | Asml Netherlands Bv | Method of generating a photolithography patterningdevice, computer program, patterning device, meth od of determining the position of a target image on or proximate a substrate, measurement device, and lithographic apparatus |
JP2006237184A (ja) * | 2005-02-24 | 2006-09-07 | Sony Corp | マスク補正方法および露光用マスク |
JP2007073666A (ja) * | 2005-09-06 | 2007-03-22 | Sony Corp | マスク補正方法、マスク製造方法および露光用マスク |
DE602005021127D1 (de) * | 2005-12-09 | 2010-06-17 | Imec | Verfahren und Vorrichtungen zur Lithographie |
JP2007227570A (ja) * | 2006-02-22 | 2007-09-06 | Toshiba Corp | 製造装置調整システム及び製造装置調整方法 |
US7713665B2 (en) * | 2006-03-29 | 2010-05-11 | Asml Netherlands B.V. | Lithographic apparatus and patterning device |
JP2007273560A (ja) * | 2006-03-30 | 2007-10-18 | Toshiba Corp | 光強度分布シミュレーション方法 |
JP4664232B2 (ja) * | 2006-05-16 | 2011-04-06 | 東京エレクトロン株式会社 | 熱処理板の温度設定方法,プログラム,プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置 |
JP4664233B2 (ja) * | 2006-05-22 | 2011-04-06 | 東京エレクトロン株式会社 | 熱処理板の温度設定方法,プログラム,プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置 |
JP4850664B2 (ja) * | 2006-11-02 | 2012-01-11 | 東京エレクトロン株式会社 | 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置 |
JP4796476B2 (ja) * | 2006-11-07 | 2011-10-19 | 東京エレクトロン株式会社 | 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置 |
KR100809717B1 (ko) * | 2007-01-12 | 2008-03-06 | 삼성전자주식회사 | 더블 패터닝된 패턴의 전기적 특성을 콘트롤할 수 있는반도체 소자 및 그의 패턴 콘트롤방법 |
US20080180696A1 (en) * | 2007-01-30 | 2008-07-31 | Sony Corporation | Process window for EUV lithography |
ATE537484T1 (de) * | 2007-02-23 | 2011-12-15 | Imec | Systeme und verfahren zur uv-lithographie |
US8975599B2 (en) * | 2007-05-03 | 2015-03-10 | Asml Netherlands B.V. | Image sensor, lithographic apparatus comprising an image sensor and use of an image sensor in a lithographic apparatus |
JP4975532B2 (ja) * | 2007-07-02 | 2012-07-11 | ルネサスエレクトロニクス株式会社 | 反射型露光方法 |
US7910863B2 (en) | 2007-09-20 | 2011-03-22 | Tokyo Electron Limited | Temperature setting method of thermal processing plate, computer-readable recording medium recording program thereon, and temperature setting apparatus for thermal processing plate |
NL2003806A (en) * | 2008-12-15 | 2010-06-16 | Asml Netherlands Bv | Method for a lithographic apparatus. |
KR101675380B1 (ko) | 2010-02-19 | 2016-11-14 | 삼성전자주식회사 | 오버레이 보정방법 및 그를 이용한 반도체 제조방법 |
DE102010029651A1 (de) * | 2010-06-02 | 2011-12-08 | Carl Zeiss Smt Gmbh | Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern |
NL2008310A (en) | 2011-04-05 | 2012-10-08 | Asml Netherlands Bv | Lithographic method and assembly. |
JP2012142619A (ja) * | 2012-04-11 | 2012-07-26 | Renesas Electronics Corp | 反射型露光方法 |
DE102012207377A1 (de) * | 2012-05-03 | 2013-11-07 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie |
US8663878B2 (en) * | 2012-07-05 | 2014-03-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mask and method for forming the same |
WO2016098452A1 (ja) * | 2014-12-19 | 2016-06-23 | Hoya株式会社 | マスクブランク用基板、マスクブランク及びこれらの製造方法、転写用マスクの製造方法並びに半導体デバイスの製造方法 |
US20170199511A1 (en) * | 2016-01-12 | 2017-07-13 | Globalfoundries Inc. | Signal detection metholodogy for fabrication control |
WO2018010928A1 (en) * | 2016-07-11 | 2018-01-18 | Asml Netherlands B.V. | Method and apparatus for determining a fingerprint of a performance parameter |
KR102700458B1 (ko) * | 2019-04-30 | 2024-08-30 | 에이에스엠엘 네델란즈 비.브이. | 포토리소그래피 이미징을 위한 장치 및 방법 |
US11340531B2 (en) * | 2020-07-10 | 2022-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Target control in extreme ultraviolet lithography systems using aberration of reflection image |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6078380A (en) | 1991-10-08 | 2000-06-20 | Nikon Corporation | Projection exposure apparatus and method involving variation and correction of light intensity distributions, detection and control of imaging characteristics, and control of exposure |
JP3303436B2 (ja) | 1993-05-14 | 2002-07-22 | キヤノン株式会社 | 投影露光装置及び半導体素子の製造方法 |
US6115108A (en) | 1998-12-04 | 2000-09-05 | Advanced Micro Devices, Inc. | Illumination modification scheme synthesis using lens characterization data |
US6057914A (en) * | 1999-04-09 | 2000-05-02 | Advanced Micro Devices, Inc. | Method for detecting and identifying a lens aberration by measurement of sidewall angles by atomic force microscopy |
EP1246014A1 (de) * | 2001-03-30 | 2002-10-02 | ASML Netherlands B.V. | Lithographischer Apparat |
EP1251402B1 (de) | 2001-03-30 | 2007-10-24 | ASML Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
TWI266959B (en) * | 2001-06-20 | 2006-11-21 | Asml Netherlands Bv | Device manufacturing method, device manufactured thereby and a mask for use in the method |
EP1271247A1 (de) | 2001-06-20 | 2003-01-02 | ASML Netherlands B.V. | Verfahren und Maske für Projektionsbelichtung |
US6673638B1 (en) * | 2001-11-14 | 2004-01-06 | Kla-Tencor Corporation | Method and apparatus for the production of process sensitive lithographic features |
US6986971B2 (en) * | 2002-11-08 | 2006-01-17 | Freescale Semiconductor, Inc. | Reflective mask useful for transferring a pattern using extreme ultraviolet (EUV) radiation and method of making the same |
-
2003
- 2003-11-20 US US10/716,939 patent/US7042550B2/en not_active Expired - Fee Related
- 2003-11-24 SG SG200306869-9A patent/SG135931A1/en unknown
- 2003-11-25 DE DE60321883T patent/DE60321883D1/de not_active Expired - Fee Related
- 2003-11-26 TW TW092133175A patent/TWI257532B/zh not_active IP Right Cessation
- 2003-11-27 KR KR1020030085198A patent/KR100571369B1/ko not_active IP Right Cessation
- 2003-11-27 JP JP2003397604A patent/JP4204959B2/ja not_active Expired - Fee Related
- 2003-11-27 CN CNA2003101246710A patent/CN1530747A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
KR100571369B1 (ko) | 2006-04-14 |
JP4204959B2 (ja) | 2009-01-07 |
TWI257532B (en) | 2006-07-01 |
US20040137677A1 (en) | 2004-07-15 |
SG135931A1 (en) | 2007-10-29 |
TW200426522A (en) | 2004-12-01 |
KR20040047703A (ko) | 2004-06-05 |
US7042550B2 (en) | 2006-05-09 |
CN1530747A (zh) | 2004-09-22 |
JP2004179663A (ja) | 2004-06-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |