DE60035955D1 - Kohlenstoffnanoröhren-Feldemissionsanzeige mit Triodenstruktur und Verfahren zu deren Herstellung - Google Patents

Kohlenstoffnanoröhren-Feldemissionsanzeige mit Triodenstruktur und Verfahren zu deren Herstellung

Info

Publication number
DE60035955D1
DE60035955D1 DE60035955T DE60035955T DE60035955D1 DE 60035955 D1 DE60035955 D1 DE 60035955D1 DE 60035955 T DE60035955 T DE 60035955T DE 60035955 T DE60035955 T DE 60035955T DE 60035955 D1 DE60035955 D1 DE 60035955D1
Authority
DE
Germany
Prior art keywords
making
same
carbon nanotube
field emission
emission display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60035955T
Other languages
English (en)
Other versions
DE60035955T2 (de
Inventor
In-Taek Han
Jong-Min Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung SDI Co Ltd
Original Assignee
Samsung SDI Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung SDI Co Ltd filed Critical Samsung SDI Co Ltd
Application granted granted Critical
Publication of DE60035955D1 publication Critical patent/DE60035955D1/de
Publication of DE60035955T2 publication Critical patent/DE60035955T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
    • H01J9/241—Manufacture or joining of vessels, leading-in conductors or bases the vessel being for a flat panel display
    • H01J9/242—Spacers between faceplate and backplate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/86—Vessels; Containers; Vacuum locks
    • H01J29/864—Spacers between faceplate and backplate of flat panel cathode ray tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/86—Vessels
    • H01J2329/8625—Spacing members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/86—Vessels
    • H01J2329/8625—Spacing members
    • H01J2329/8665—Spacer holding means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/952—Display

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
DE60035955T 2000-02-15 2000-04-25 Kohlenstoffnanoröhren-Feldemissionsanzeige mit Triodenstruktur und Verfahren zu deren Herstellung Expired - Lifetime DE60035955T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020000007116A KR100316780B1 (ko) 2000-02-15 2000-02-15 격벽 리브를 이용한 3극관 탄소나노튜브 전계 방출 소자및 그 제작 방법
KR2000007116 2000-02-15

Publications (2)

Publication Number Publication Date
DE60035955D1 true DE60035955D1 (de) 2007-09-27
DE60035955T2 DE60035955T2 (de) 2008-04-30

Family

ID=19646655

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60035955T Expired - Lifetime DE60035955T2 (de) 2000-02-15 2000-04-25 Kohlenstoffnanoröhren-Feldemissionsanzeige mit Triodenstruktur und Verfahren zu deren Herstellung

Country Status (5)

Country Link
US (1) US6515415B1 (de)
EP (1) EP1146541B1 (de)
JP (1) JP4700200B2 (de)
KR (1) KR100316780B1 (de)
DE (1) DE60035955T2 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3611503B2 (ja) * 1999-07-21 2005-01-19 シャープ株式会社 電子源及びその製造方法
KR100314094B1 (ko) * 1999-08-12 2001-11-15 김순택 전기 영동법을 이용한 카본나노튜브 필드 에미터의 제조 방법
KR100343205B1 (ko) * 2000-04-26 2002-07-10 김순택 카본나노튜브를 이용한 삼극 전계 방출 어레이 및 그 제작방법
KR100763890B1 (ko) 2001-08-06 2007-10-05 삼성에스디아이 주식회사 Ｃｎｔ를 적용한 전계방출표시소자의 제조방법
TW511108B (en) * 2001-08-13 2002-11-21 Delta Optoelectronics Inc Carbon nanotube field emission display technology
US6897603B2 (en) 2001-08-24 2005-05-24 Si Diamond Technology, Inc. Catalyst for carbon nanotube growth
JP2003197131A (ja) * 2001-12-26 2003-07-11 Hitachi Ltd 平面表示装置およびその製造方法
US7071603B2 (en) * 2002-02-20 2006-07-04 Cdream Corporation Patterned seed layer suitable for electron-emitting device, and associated fabrication method
US7053538B1 (en) 2002-02-20 2006-05-30 Cdream Corporation Sectioned resistor layer for a carbon nanotube electron-emitting device
TWI220319B (en) * 2002-03-11 2004-08-11 Solidlite Corp Nano-wire light emitting device
US6975063B2 (en) * 2002-04-12 2005-12-13 Si Diamond Technology, Inc. Metallization of carbon nanotubes for field emission applications
JP2003346689A (ja) * 2002-05-22 2003-12-05 Hitachi Displays Ltd 表示装置
US6979947B2 (en) 2002-07-09 2005-12-27 Si Diamond Technology, Inc. Nanotriode utilizing carbon nanotubes and fibers
CN100541700C (zh) * 2002-07-30 2009-09-16 学校法人浦项工科大学校 使用阳极氧化工艺制造的具有三极管结构的电场发射器件及其制造方法
US7175494B1 (en) 2002-08-22 2007-02-13 Cdream Corporation Forming carbon nanotubes at lower temperatures suitable for an electron-emitting device
US6803708B2 (en) * 2002-08-22 2004-10-12 Cdream Display Corporation Barrier metal layer for a carbon nanotube flat panel display
US20040037972A1 (en) * 2002-08-22 2004-02-26 Kang Simon Patterned granulized catalyst layer suitable for electron-emitting device, and associated fabrication method
US6958499B2 (en) * 2002-12-11 2005-10-25 Electronics And Telecommunications Research Institute Triode field emission device having mesh gate and field emission display using the same
US6984535B2 (en) * 2002-12-20 2006-01-10 Cdream Corporation Selective etching of a protective layer to form a catalyst layer for an electron-emitting device
JP2004228084A (ja) 2003-01-21 2004-08-12 Samsung Sdi Co Ltd 電界放出素子
US7521851B2 (en) * 2003-03-24 2009-04-21 Zhidan L Tolt Electron emitting composite based on regulated nano-structures and a cold electron source using the composite
CN1310270C (zh) * 2003-03-26 2007-04-11 清华大学 一种场发射显示器的制备方法
CN100345239C (zh) * 2003-03-26 2007-10-24 清华大学 碳纳米管场发射显示装置的制备方法
CN1287413C (zh) * 2003-03-26 2006-11-29 清华大学 一种场发射显示器
CN100463094C (zh) * 2003-03-26 2009-02-18 清华大学 一种场发射显示器的制作方法
CN100437876C (zh) * 2003-03-27 2008-11-26 清华大学 一种场发射元件
CN100405519C (zh) * 2003-03-27 2008-07-23 清华大学 一种场发射元件的制备方法
CN100419943C (zh) * 2003-04-03 2008-09-17 清华大学 一种场发射显示装置
JP4219724B2 (ja) * 2003-04-08 2009-02-04 三菱電機株式会社 冷陰極発光素子の製造方法
CN1886537B (zh) * 2003-10-16 2013-07-24 阿克伦大学 碳纳米纤维基板上的碳纳米管
US7459839B2 (en) * 2003-12-05 2008-12-02 Zhidan Li Tolt Low voltage electron source with self aligned gate apertures, and luminous display using the electron source
KR20050096536A (ko) 2004-03-31 2005-10-06 삼성에스디아이 주식회사 그리드 전극을 갖는 전자 방출 표시장치
KR100986895B1 (ko) * 2004-03-31 2010-10-08 삼성에스디아이 주식회사 그리드 고정 구조를 구비한 전자방출 표시장치
US20050236963A1 (en) * 2004-04-15 2005-10-27 Kang Sung G Emitter structure with a protected gate electrode for an electron-emitting device
CN1707724A (zh) * 2004-06-07 2005-12-14 清华大学 场发射装置及其制造方法
CN1707725A (zh) * 2004-06-11 2005-12-14 清华大学 场发射装置及其制造方法
KR20060029074A (ko) * 2004-09-30 2006-04-04 삼성에스디아이 주식회사 전자방출 표시장치 및 이의 제조방법
US7586248B2 (en) * 2005-04-29 2009-09-08 Samsung Sdi Co., Ltd. Electron emission device, method for manufacturing the device, and electron emission display using the same
CN100573063C (zh) * 2005-06-15 2009-12-23 中国科学院上海微系统与信息技术研究所 微机械碳纳米管场发射型非致冷热成像器件及制作方法
KR100710592B1 (ko) * 2005-07-18 2007-04-24 일진다이아몬드(주) 전계 방출 장치
US7326328B2 (en) 2005-07-19 2008-02-05 General Electric Company Gated nanorod field emitter structures and associated methods of fabrication
CN1929080A (zh) * 2005-09-07 2007-03-14 鸿富锦精密工业（深圳）有限公司 场发射显示装置
US20090045061A1 (en) * 2007-06-20 2009-02-19 New Jersey Institute Of Technology Nanotube Devices and Vertical Field Effect Transistors
KR101007189B1 (ko) * 2008-11-04 2011-01-12 이송근 반영구적 간판고정장치
US20100141866A1 (en) * 2008-12-04 2010-06-10 Kyung-Sun Ryu Light emission device and display device using the light emission device as a light source

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5675212A (en) * 1992-04-10 1997-10-07 Candescent Technologies Corporation Spacer structures for use in flat panel displays and methods for forming same
JPH02299125A (ja) * 1989-05-15 1990-12-11 Canon Inc 電極の形成方法及び電子線表示装置
JP3054205B2 (ja) * 1991-02-20 2000-06-19 株式会社リコー 電子放出素子集積基板
US5548185A (en) * 1992-03-16 1996-08-20 Microelectronics And Computer Technology Corporation Triode structure flat panel display employing flat field emission cathode
US5650690A (en) * 1994-11-21 1997-07-22 Candescent Technologies, Inc. Backplate of field emission device with self aligned focus structure and spacer wall locators
JPH08222156A (ja) * 1995-02-17 1996-08-30 Nec Home Electron Ltd 画像表示装置
JP2809129B2 (ja) * 1995-04-20 1998-10-08 日本電気株式会社 電界放射冷陰極とこれを用いた表示装置
JPH09306395A (ja) * 1996-05-20 1997-11-28 Toshiba Corp 平面型表示装置およびその製造方法
US5708325A (en) * 1996-05-20 1998-01-13 Motorola Display spacer structure for a field emission device
KR100365444B1 (ko) * 1996-09-18 2004-01-24 가부시끼가이샤 도시바 진공마이크로장치와이를이용한화상표시장치
US5864205A (en) * 1996-12-02 1999-01-26 Motorola Inc. Gridded spacer assembly for a field emission display
JP3564913B2 (ja) * 1997-01-29 2004-09-15 双葉電子工業株式会社 気密外囲器用支持部材及び気密外囲器
JP3461260B2 (ja) * 1997-03-28 2003-10-27 キヤノン株式会社 画像形成装置
JPH11162383A (ja) * 1997-12-01 1999-06-18 Ise Electronics Corp 平面ディスプレイ
JP3488967B2 (ja) * 1997-12-25 2004-01-19 パイオニア株式会社 電子放出素子フラットパネルディスプレイ装置
JPH11265653A (ja) * 1998-03-18 1999-09-28 Ulvac Corp 電極、及びその電極を有する表示装置
JPH11329217A (ja) * 1998-05-15 1999-11-30 Sony Corp 電界放出型カソードの製造方法
KR100480773B1 (ko) * 2000-01-07 2005-04-06 삼성에스디아이 주식회사 카본 나노 튜브를 이용한 3극 전계방출소자의 제작방법

Also Published As

Publication number Publication date
JP2001236907A (ja) 2001-08-31
DE60035955T2 (de) 2008-04-30
US6515415B1 (en) 2003-02-04
KR100316780B1 (ko) 2001-12-12
EP1146541B1 (de) 2007-08-15
KR20010081497A (ko) 2001-08-29
EP1146541A2 (de) 2001-10-17
EP1146541A3 (de) 2003-07-16
JP4700200B2 (ja) 2011-06-15

Similar Documents

Publication Publication Date Title
DE60035955D1 (de) Kohlenstoffnanoröhren-Feldemissionsanzeige mit Triodenstruktur und Verfahren zu deren Herstellung
DE60300022D1 (de) Feldemissionsanzeigevorrichtung mit Triodenstruktur mit Kohlenstoffnanoröhren und Verfahren zur deren Herstellung
DE69817293D1 (de) Kohlenstoff-Nanofaser-Einrichtung, Verfahren zur Herstellung dieser Einrichtung, und elektronenstrahlende Einrichtung
DE60101232D1 (de) Elektronenemittierende Quelle, Baugruppe und Verfahren zu deren Herstellung
DE60301582D1 (de) Speicheranordnung mit kohlenstoffnanoröhre und Verfahren zur Herstellung der Speicheranordnung
GB2361805B (en) Field emission array with carbon nanotubes and method for fabricating the field emission array
DE69802898D1 (de) Verfahren zur herstellung von kohlenstoffnanoröhren, verfahren zur herstellung von kohlenstoffnanoröhrenfilm und struktur versehen mit kohlenstoffnanoröhrenfilm
DE60104907D1 (de) Verfahren zur Herstellung einer Kohlenstoffnanoröhren-Feldemissionsanordnung mit Triodenstruktur
DE60201689D1 (de) Verfahren zur Herstellung einer Kohlenstoffnanoröhren-Feldemissionsanordnung mit Triodenstruktur
DE60144235D1 (de) Zusammengesetzter film mit mehreren komponenten und verfahren zu seiner herstellung
DE602004007440D1 (de) Kohlenstoffnanoröhren Anordnung, Verfahren zur Herstellung, Feldemissionsanordnung und Feldemissionsanzeige
DE69910573D1 (de) Plasma-anzeigevorrichtung mit guten licht-emissionseigenschaften, und verfahren und vorrichtung zu deren herstellung
DE60127239D1 (de) Verbundstoff mit feuerverzögernden eigenschaften und verfahren zu seiner herstellung
DE60144104D1 (de) Membranen mit gemischter matrix und pyrolisierten kohlenstoffsiebteilchen und verfahren zur herstellung derselben
DE69608403D1 (de) Elektronenemittierende elektrode und verfahren zu deren herstellung
DE60106698D1 (de) Faser aus anorganischem Material und Verfahren zu deren Herstellung
DE69617704T2 (de) Feldemissionsanzeigevorrichtung mit fokusierungelektroden beimder anode und verfahren zu deren herstellung
DE69412882D1 (de) Kohlenstoffmaterial, hergestellt aus Graphit, und Verfahren zur Herstellung desselben
DE10192115T1 (de) Von der Umgebung abgedichteter Elektronikaufbau und Verfahren zu seiner Herstellung
DE60111904D1 (de) Biosensor und verfahren zu dessen herstellung
DE50107925D1 (de) Hochvolt-diode und verfahren zu deren herstellung
DE60005735D1 (de) Feldemissionskathode, Elektronenemissionsvorrichtung und Verfahren zur Herstellung
DE69936203D1 (de) Polyalphaolefine mit vervesserter oxidationsstabilität und verfahren zu deren herstellung
DE69509625D1 (de) Bildschirm, Verfahren zu seiner Herstellung und Kathodenstrahlrohr
DE69941811D1 (de) Elektronenemissionsvorrichtung, verfahren zur herselben; bildanzeige mit solchen elektronenemissions- vorrichtung und verfahren zur herstellung derselben

Legal Events

Date Code Title Description
8364 No opposition during term of opposition