DE60101232D1 - Elektronenemittierende Quelle, Baugruppe und Verfahren zu deren Herstellung - Google Patents

Elektronenemittierende Quelle, Baugruppe und Verfahren zu deren Herstellung

Info

Publication number
DE60101232D1
DE60101232D1 DE60101232T DE60101232T DE60101232D1 DE 60101232 D1 DE60101232 D1 DE 60101232D1 DE 60101232 T DE60101232 T DE 60101232T DE 60101232 T DE60101232 T DE 60101232T DE 60101232 D1 DE60101232 D1 DE 60101232D1
Authority
DE
Germany
Prior art keywords
assembly
making
same
emitting source
electron emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60101232T
Other languages
English (en)
Other versions
DE60101232T2 (de
Inventor
Sashiro Uemura
Takeshi Nagasako
Junko Yotani
Hirohiko Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Noritake Co Ltd
Ulvac Inc
Original Assignee
Noritake Co Ltd
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Noritake Co Ltd, Ulvac Inc filed Critical Noritake Co Ltd
Application granted granted Critical
Publication of DE60101232D1 publication Critical patent/DE60101232D1/de
Publication of DE60101232T2 publication Critical patent/DE60101232T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S427/00—Coating processes
    • Y10S427/102—Fullerene type base or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/939—Electron emitter, e.g. spindt emitter tip coated with nanoparticles
DE60101232T 2000-02-16 2001-02-16 Elektronenemittierende Quelle, Baugruppe und Verfahren zu deren Herstellung Expired - Lifetime DE60101232T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000037672 2000-02-16
JP2000037672A JP3595233B2 (ja) 2000-02-16 2000-02-16 電子放出源及びその製造方法

Publications (2)

Publication Number Publication Date
DE60101232D1 true DE60101232D1 (de) 2003-12-24
DE60101232T2 DE60101232T2 (de) 2004-04-22

Family

ID=18561531

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60101232T Expired - Lifetime DE60101232T2 (de) 2000-02-16 2001-02-16 Elektronenemittierende Quelle, Baugruppe und Verfahren zu deren Herstellung

Country Status (8)

Country Link
US (2) US6522055B2 (de)
EP (1) EP1126494B1 (de)
JP (1) JP3595233B2 (de)
KR (1) KR100411623B1 (de)
CN (1) CN1185674C (de)
CA (1) CA2335213C (de)
DE (1) DE60101232T2 (de)
TW (1) TW495790B (de)

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JP2002025477A (ja) * 2000-07-07 2002-01-25 Ise Electronics Corp 平面ディスプレイ及びその製造方法
US7259510B1 (en) * 2000-08-30 2007-08-21 Agere Systems Inc. On-chip vacuum tube device and process for making device
FR2815954B1 (fr) * 2000-10-27 2003-02-21 Commissariat Energie Atomique Procede et dispositif de depot par plasma a la resonance cyclotron electronique de nanotubes de carbone monoparois et nanotubes ainsi obtenus
ATE275530T1 (de) * 2001-02-26 2004-09-15 Nanolight Internat Ltd Verfahren zur bildung einer kohlenstoffnanoröhren enthaltenden beschichtung auf einem substrat
JP3768937B2 (ja) * 2001-09-10 2006-04-19 キヤノン株式会社 電子放出素子、電子源及び画像表示装置の製造方法
JP3839713B2 (ja) 2001-12-12 2006-11-01 株式会社ノリタケカンパニーリミテド 平面ディスプレイの製造方法
FR2833935B1 (fr) * 2001-12-26 2004-01-30 Commissariat Energie Atomique Procede de fabrication d'au moins un nanotube entre deux elements electriquement conducteurs et dispositif pour mettre en oeuvre un tel procede
JP4404961B2 (ja) * 2002-01-08 2010-01-27 双葉電子工業株式会社 カーボンナノ繊維の製造方法。
KR100837393B1 (ko) * 2002-01-22 2008-06-12 삼성에스디아이 주식회사 탄소와 친화도가 높은 금속을 전극으로 구비하는 전자소자
US7638727B2 (en) * 2002-05-08 2009-12-29 Btu International Inc. Plasma-assisted heat treatment
US20060237398A1 (en) * 2002-05-08 2006-10-26 Dougherty Mike L Sr Plasma-assisted processing in a manufacturing line
US7497922B2 (en) * 2002-05-08 2009-03-03 Btu International, Inc. Plasma-assisted gas production
US20060057016A1 (en) * 2002-05-08 2006-03-16 Devendra Kumar Plasma-assisted sintering
US20060233682A1 (en) * 2002-05-08 2006-10-19 Cherian Kuruvilla A Plasma-assisted engine exhaust treatment
AU2002325215A1 (en) * 2002-05-08 2003-11-11 Leonhard Kurz Gmbh And Co. Kg Method of decorating large plastic 3d objects
US20050233091A1 (en) * 2002-05-08 2005-10-20 Devendra Kumar Plasma-assisted coating
US20060228497A1 (en) * 2002-05-08 2006-10-12 Satyendra Kumar Plasma-assisted coating
BR0309810A (pt) * 2002-05-08 2007-04-10 Dana Corp sistemas e método de tratamento da exaustão de motor e veìculo móvel
US7445817B2 (en) * 2002-05-08 2008-11-04 Btu International Inc. Plasma-assisted formation of carbon structures
AU2003301728A1 (en) * 2002-06-21 2004-05-25 Nanomix. Inc. Dispersed growth of nanotubes on a substrate
JP3876313B2 (ja) * 2002-11-12 2007-01-31 国立大学法人 北海道大学 繊維状固体炭素集合体の製造方法
US7189940B2 (en) * 2002-12-04 2007-03-13 Btu International Inc. Plasma-assisted melting
US6933222B2 (en) * 2003-01-02 2005-08-23 Intel Corporation Microcircuit fabrication and interconnection
JP3697257B2 (ja) 2003-03-25 2005-09-21 キヤノン株式会社 カーボンファイバー、電子放出素子、電子源、画像形成装置、ライトバルブ、二次電池の製造方法
JP3878571B2 (ja) * 2003-04-15 2007-02-07 株式会社ノリタケカンパニーリミテド 電子放出源の製造方法
KR101065308B1 (ko) * 2004-02-04 2011-09-16 삼성에스디아이 주식회사 광전기화학전지
US20050238810A1 (en) * 2004-04-26 2005-10-27 Mainstream Engineering Corp. Nanotube/metal substrate composites and methods for producing such composites
US20060006780A1 (en) * 2004-07-06 2006-01-12 Chun-Yen Hsiao Electron emission source of field emission display and method for making the same
US20060083927A1 (en) * 2004-10-15 2006-04-20 Zyvex Corporation Thermal interface incorporating nanotubes
WO2006127037A2 (en) * 2004-11-05 2006-11-30 Dana Corporation Atmospheric pressure processing using microwave-generated plasmas
JP4781662B2 (ja) * 2004-11-17 2011-09-28 シャープ株式会社 カーボンナノチューブの作製方法およびカーボンナノチューブの作製装置
KR20060059747A (ko) * 2004-11-29 2006-06-02 삼성에스디아이 주식회사 전자방출 표시장치
FR2880200B1 (fr) * 2004-12-24 2012-08-17 St Microelectronics Sa Plaquette munie de conducteurs transverses et application a une pile a combustible
KR100657953B1 (ko) * 2005-02-23 2006-12-14 삼성에스디아이 주식회사 전계 방출 표시장치의 실링 구조 및 그 제조 방법
CN100462300C (zh) * 2005-07-29 2009-02-18 鸿富锦精密工业（深圳）有限公司 碳纳米管生长装置
JP5049473B2 (ja) * 2005-08-19 2012-10-17 株式会社アルバック 配線形成方法及び配線
CN100467370C (zh) * 2005-09-12 2009-03-11 鸿富锦精密工业（深圳）有限公司 一种碳纳米管制备装置及方法
US20070084407A1 (en) * 2005-10-14 2007-04-19 Hon Hai Precision Industry Co., Ltd. Apparatus and method for manufacturing carbon nanotubes
CN100573808C (zh) * 2006-03-22 2009-12-23 清华大学 场发射照明光源及其制造方法
JP4523562B2 (ja) * 2006-03-23 2010-08-11 株式会社ノリタケカンパニーリミテド 電子放出源及びその製造方法
US7635945B2 (en) * 2006-07-21 2009-12-22 Tsinghua University Field emission device having a hollow shaped shielding structure
JP2008071501A (ja) * 2006-09-12 2008-03-27 Noritake Co Ltd 蛍光表示装置
WO2011004609A1 (ja) * 2009-07-08 2011-01-13 Ohmae Nobuo Ｃｏ２リサイクリング方法、ｃｏ２削減方法、および装置
CN102064063B (zh) 2010-12-24 2012-08-29 清华大学 场发射阴极装置及其制备方法
CN102097264B (zh) * 2011-01-21 2012-11-28 东南大学 一种大电流场致发射阴极结构
WO2013175806A1 (ja) * 2012-05-25 2013-11-28 株式会社ティサポート Ｃｏ２リサイクリング装置およびｃｏ２リサイクリングシステム
CN103896245B (zh) * 2012-12-29 2016-01-20 清华大学 反应器及生长碳纳米管的方法
JP2017107816A (ja) * 2015-12-11 2017-06-15 株式会社堀場エステック 熱電子放出用フィラメント、四重極質量分析計、及び残留ガス分析方法
KR102616653B1 (ko) * 2018-12-14 2023-12-21 삼성전자주식회사 탄소섬유 대전장치 및 이를 구비한 가전기기

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KR100365444B1 (ko) * 1996-09-18 2004-01-24 가부시끼가이샤 도시바 진공마이크로장치와이를이용한화상표시장치
DE69834673T2 (de) 1997-09-30 2006-10-26 Noritake Co., Ltd., Nagoya Verfahren zur Herstellung einer Elektronenemittierenden Quelle
JP3740295B2 (ja) 1997-10-30 2006-02-01 キヤノン株式会社 カーボンナノチューブデバイス、その製造方法及び電子放出素子
JP3902883B2 (ja) 1998-03-27 2007-04-11 キヤノン株式会社 ナノ構造体及びその製造方法
JP2002518280A (ja) 1998-06-19 2002-06-25 ザ・リサーチ・ファウンデーション・オブ・ステイト・ユニバーシティ・オブ・ニューヨーク 整列した自立炭素ナノチューブおよびその合成
JP3497740B2 (ja) 1998-09-09 2004-02-16 株式会社東芝 カーボンナノチューブの製造方法及び電界放出型冷陰極装置の製造方法
US6250984B1 (en) * 1999-01-25 2001-06-26 Agere Systems Guardian Corp. Article comprising enhanced nanotube emitter structure and process for fabricating article
WO2000052726A1 (en) 1999-03-04 2000-09-08 Electrovac, Fabrikation Elektrotechnischer Spezialartikel Gesellschaft M.B.H. Cathode structure for a field emission display
KR100480773B1 (ko) * 2000-01-07 2005-04-06 삼성에스디아이 주식회사 카본 나노 튜브를 이용한 3극 전계방출소자의 제작방법
US7335603B2 (en) * 2000-02-07 2008-02-26 Vladimir Mancevski System and method for fabricating logic devices comprising carbon nanotube transistors
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Also Published As

Publication number Publication date
CA2335213C (en) 2003-09-30
US20010028209A1 (en) 2001-10-11
EP1126494B1 (de) 2003-11-19
EP1126494A1 (de) 2001-08-22
TW495790B (en) 2002-07-21
JP3595233B2 (ja) 2004-12-02
CN1185674C (zh) 2005-01-19
DE60101232T2 (de) 2004-04-22
KR20010082722A (ko) 2001-08-30
JP2001229806A (ja) 2001-08-24
CN1309408A (zh) 2001-08-22
US20030013372A1 (en) 2003-01-16
US6522055B2 (en) 2003-02-18
CA2335213A1 (en) 2001-08-16
KR100411623B1 (ko) 2003-12-18
US6652923B2 (en) 2003-11-25

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