DE60208224D1 - Magnetoresistive hochleistungs-spinventilanordnung - Google Patents

Magnetoresistive hochleistungs-spinventilanordnung

Info

Publication number
DE60208224D1
DE60208224D1 DE60208224T DE60208224T DE60208224D1 DE 60208224 D1 DE60208224 D1 DE 60208224D1 DE 60208224 T DE60208224 T DE 60208224T DE 60208224 T DE60208224 T DE 60208224T DE 60208224 D1 DE60208224 D1 DE 60208224D1
Authority
DE
Germany
Prior art keywords
spin valve
dielectric
layers
semiconducting layer
magnetoresistive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60208224T
Other languages
English (en)
Other versions
DE60208224T2 (de
Inventor
Bernard Dieny
Bernard Rodmacq
Franck Ernult
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE60208224D1 publication Critical patent/DE60208224D1/de
Publication of DE60208224T2 publication Critical patent/DE60208224T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/305—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling
    • H01F41/307—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling insulating or semiconductive spacer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
    • Y10T29/49032—Fabricating head structure or component thereof
    • Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
    • Y10T29/49043—Depositing magnetic layer or coating
    • Y10T29/49044—Plural magnetic deposition layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Semiconductor Memories (AREA)
  • Magnetically Actuated Valves (AREA)
  • Lift Valve (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
DE60208224T 2001-10-12 2002-10-10 Magnetoresistive hochleistungs-spinventilanordnung Expired - Lifetime DE60208224T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0113174 2001-10-12
FR0113174A FR2830971B1 (fr) 2001-10-12 2001-10-12 Dispositif magnetoresistif a vanne de spin a performances ameliorees
PCT/FR2002/003448 WO2003032338A1 (fr) 2001-10-12 2002-10-10 Dispositif magnetoresistif a vanne de spin a performances ameliorees

Publications (2)

Publication Number Publication Date
DE60208224D1 true DE60208224D1 (de) 2006-01-26
DE60208224T2 DE60208224T2 (de) 2006-08-03

Family

ID=8868224

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60208224T Expired - Lifetime DE60208224T2 (de) 2001-10-12 2002-10-10 Magnetoresistive hochleistungs-spinventilanordnung

Country Status (7)

Country Link
US (2) US7453672B2 (de)
EP (1) EP1435101B1 (de)
JP (1) JP2005505932A (de)
AT (1) ATE313848T1 (de)
DE (1) DE60208224T2 (de)
FR (1) FR2830971B1 (de)
WO (1) WO2003032338A1 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7227728B2 (en) * 2003-08-29 2007-06-05 Hitachi Global Storage Technologies Netherlands B.V. Method and apparatus for a current-perpendicular-to-plane Giant Magneto-Resistance sensor with embedded composite film
US7423851B2 (en) * 2003-09-30 2008-09-09 Tdk Corporation Magneto-resistive element and device being provided with magneto-resistive element having magnetic nano-contact
JP2005123298A (ja) * 2003-10-15 2005-05-12 Nippon Hoso Kyokai <Nhk> 磁気メモリー装置及びその製造方法
DE10356285A1 (de) * 2003-11-28 2005-06-30 Infineon Technologies Ag Integrierter Halbleiterspeicher und Verfahren zum Herstellen eines integrierten Halbleiterspeichers
JP4082711B2 (ja) 2004-03-12 2008-04-30 独立行政法人科学技術振興機構 磁気抵抗素子及びその製造方法
JP4822680B2 (ja) * 2004-08-10 2011-11-24 株式会社東芝 磁気抵抗効果素子の製造方法
JP4292128B2 (ja) * 2004-09-07 2009-07-08 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法
JP2006114610A (ja) * 2004-10-13 2006-04-27 Toshiba Corp 磁気抵抗効果素子とそれを用いた磁気ヘッドおよび磁気再生装置
JP4261454B2 (ja) * 2004-10-13 2009-04-30 株式会社東芝 磁気抵抗効果素子とそれを用いた磁気ヘッドおよび磁気再生装置
JP4309363B2 (ja) * 2005-03-16 2009-08-05 株式会社東芝 磁気抵抗効果素子、磁気再生ヘッド及び磁気情報再生装置
US20060291107A1 (en) * 2005-06-22 2006-12-28 Tdk Corporation Magnetoresistive element with tilted in-stack bias
JP2007103471A (ja) * 2005-09-30 2007-04-19 Sony Corp 記憶素子及びメモリ
US7423847B2 (en) * 2005-11-03 2008-09-09 Hitachi Global Storage Technologies Netherlands B.V. Current-perpendicular-to-the-plane spin-valve (CPP-SV) sensor with current-confining apertures concentrated near the sensing edge
JP4786331B2 (ja) * 2005-12-21 2011-10-05 株式会社東芝 磁気抵抗効果素子の製造方法
KR20080091182A (ko) * 2006-01-30 2008-10-09 가부시키가이샤 니콘 반사 굴절 결상 광학계, 노광 장치 및 디바이스의 제조방법
JP4260182B2 (ja) 2006-02-06 2009-04-30 Ｔｄｋ株式会社 磁気抵抗効果素子および薄膜磁気ヘッド
JP4514721B2 (ja) 2006-02-09 2010-07-28 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置及び磁気記憶装置
JP4758812B2 (ja) * 2006-04-26 2011-08-31 株式会社日立製作所 スピン流狭窄層を備えたスピン蓄積素子及びその作製方法
JP2007299880A (ja) 2006-04-28 2007-11-15 Toshiba Corp 磁気抵抗効果素子，および磁気抵抗効果素子の製造方法
JP4550777B2 (ja) 2006-07-07 2010-09-22 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置及び磁気メモリ
US7646570B2 (en) * 2006-07-31 2010-01-12 Hitachi Global Storage Technologies Netherlands B.V. CPP read sensor having constrained current paths made of lithographically-defined conductive vias with surrounding oxidized metal sublayers and method of making same
JP4764294B2 (ja) * 2006-09-08 2011-08-31 株式会社東芝 磁気抵抗効果素子、及び磁気ヘッド
JP4539876B2 (ja) * 2006-10-26 2010-09-08 Ｔｄｋ株式会社 磁気抵抗効果素子の製造方法
US8143682B2 (en) * 2006-10-31 2012-03-27 Hewlett-Packard Development Company, L.P. Methods and systems for implementing logic gates with spintronic devices located at nanowire crossbar junctions of crossbar arrays
JP2008124288A (ja) * 2006-11-14 2008-05-29 Tdk Corp 磁気抵抗効果素子およびその製造方法、ならびに薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ヘッドアームアセンブリおよび磁気ディスク装置
JP4388093B2 (ja) * 2007-03-27 2009-12-24 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置
US7978442B2 (en) * 2007-10-03 2011-07-12 Tdk Corporation CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer
JPWO2009050945A1 (ja) * 2007-10-15 2011-02-24 富士電機ホールディングス株式会社 スピンバルブ素子
JP2009164182A (ja) * 2007-12-28 2009-07-23 Hitachi Global Storage Technologies Netherlands Bv 磁気抵抗効果素子、磁気ヘッド及び磁気記録再生装置
WO2009102577A1 (en) * 2008-02-13 2009-08-20 University Of Delaware Electromagnetic wave detection methods and apparatus
JP5039007B2 (ja) 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5039006B2 (ja) 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP2010080839A (ja) 2008-09-29 2010-04-08 Toshiba Corp 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリおよび磁気記録再生装置
US8941379B2 (en) * 2009-05-14 2015-01-27 University Of Delaware Electromagnetic wave detection systems and methods
US20100315869A1 (en) * 2009-06-15 2010-12-16 Magic Technologies, Inc. Spin torque transfer MRAM design with low switching current
DE102011083623A1 (de) * 2011-09-28 2013-03-28 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Dünnschichtbauelement und Verfahren zu seiner Herstellung
US9117515B2 (en) * 2012-01-18 2015-08-25 Macronix International Co., Ltd. Programmable metallization cell with two dielectric layers
US9437266B2 (en) 2012-11-13 2016-09-06 Macronix International Co., Ltd. Unipolar programmable metallization cell
US9529060B2 (en) 2014-01-09 2016-12-27 Allegro Microsystems, Llc Magnetoresistance element with improved response to magnetic fields
JP6763887B2 (ja) 2015-06-05 2020-09-30 アレグロ・マイクロシステムズ・エルエルシー 磁界に対する応答が改善されたスピンバルブ磁気抵抗効果素子
US10620279B2 (en) 2017-05-19 2020-04-14 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US11022661B2 (en) 2017-05-19 2021-06-01 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
CN110867514B (zh) * 2019-11-14 2021-09-28 中国科学院半导体研究所 含内建电场的自旋阀和包含所述自旋阀的自旋电子器件
JP7434962B2 (ja) * 2020-02-05 2024-02-21 Tdk株式会社 磁気抵抗効果素子
US11719771B1 (en) 2022-06-02 2023-08-08 Allegro Microsystems, Llc Magnetoresistive sensor having seed layer hysteresis suppression

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2692711B1 (fr) * 1992-06-23 1996-02-09 Thomson Csf Transducteur magnetoresistif.
JP3293437B2 (ja) 1995-12-19 2002-06-17 松下電器産業株式会社 磁気抵抗効果素子、磁気抵抗効果型ヘッド及びメモリー素子
US6064552A (en) * 1997-03-18 2000-05-16 Kabushiki Kaisha Toshiba Magnetoresistive head having magnetic yoke and giant magnetoresistive element such that a first electrode is formed on the giant magnetoresistive element which in turn is formed on the magnetic yoke which acts as a second electrode
JPH10341047A (ja) * 1997-06-06 1998-12-22 Sony Corp 磁気トンネル素子
JP2000040619A (ja) * 1998-07-23 2000-02-08 Sumitomo Metal Ind Ltd 磁気抵抗効果膜
JP3601690B2 (ja) * 1999-03-02 2004-12-15 松下電器産業株式会社 磁気抵抗効果素子とその製造方法、磁気抵抗効果型ヘッド、磁気記録装置、磁気抵抗効果メモリ素子
US6567246B1 (en) 1999-03-02 2003-05-20 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element
JP4572434B2 (ja) * 1999-03-23 2010-11-04 パナソニック株式会社 磁気抵抗効果素子、磁気抵抗効果型ヘッド、及びメモリ−素子
JP2001068760A (ja) * 1999-08-31 2001-03-16 Hitachi Ltd 強磁性トンネル接合素子
JP4469482B2 (ja) * 1999-09-24 2010-05-26 株式会社東芝 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気再生装置、及び磁性積層体
KR100373473B1 (ko) 1999-09-24 2003-02-25 가부시끼가이샤 도시바 자기 저항 효과 소자, 자기 저항 효과 헤드, 자기 재생장치 및 자성 적층체
US6233172B1 (en) * 1999-12-17 2001-05-15 Motorola, Inc. Magnetic element with dual magnetic states and fabrication method thereof
JP3833512B2 (ja) * 2000-10-20 2006-10-11 株式会社東芝 磁気抵抗効果素子
US6937446B2 (en) * 2000-10-20 2005-08-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
JP3995072B2 (ja) 2000-11-16 2007-10-24 富士通株式会社 Ｃｐｐ構造スピンバルブヘッド
US6686068B2 (en) * 2001-02-21 2004-02-03 International Business Machines Corporation Heterogeneous spacers for CPP GMR stacks
JP3904467B2 (ja) * 2001-03-22 2007-04-11 アルプス電気株式会社 磁気検出素子及びその製造方法
US6707649B2 (en) 2001-03-22 2004-03-16 Alps Electric Co., Ltd. Magnetic sensing element permitting decrease in effective element size while maintaining large optical element size
JP3849460B2 (ja) * 2001-05-29 2006-11-22 ソニー株式会社 磁気抵抗効果素子、磁気抵抗効果型磁気センサ、および磁気抵抗効果型磁気ヘッド
JP2003008105A (ja) * 2001-06-25 2003-01-10 Matsushita Electric Ind Co Ltd 磁気抵抗素子および磁気メモリ
US6937447B2 (en) 2001-09-19 2005-08-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
JP3967237B2 (ja) * 2001-09-19 2007-08-29 株式会社東芝 磁気抵抗効果素子及びその製造方法、磁気再生素子並びに磁気メモリ
JP2008252008A (ja) * 2007-03-30 2008-10-16 Toshiba Corp 磁気抵抗効果素子、およびその製造方法

Also Published As

Publication number Publication date
DE60208224T2 (de) 2006-08-03
JP2005505932A (ja) 2005-02-24
EP1435101A1 (de) 2004-07-07
US7830640B2 (en) 2010-11-09
FR2830971A1 (fr) 2003-04-18
US20040246631A1 (en) 2004-12-09
WO2003032338A1 (fr) 2003-04-17
FR2830971B1 (fr) 2004-03-12
EP1435101B1 (de) 2005-12-21
US20090290266A1 (en) 2009-11-26
US7453672B2 (en) 2008-11-18
ATE313848T1 (de) 2006-01-15

Similar Documents

Publication Publication Date Title
DE60208224D1 (de) Magnetoresistive hochleistungs-spinventilanordnung
JP4919893B2 (ja) 漏れ磁場を用いたスピントランジスタ
US8792264B2 (en) Method of switching out-of-plane magnetic tunnel junction cells
WO2005096313A3 (en) Separate write and read access architecture for magnetic tunnel junction
BRPI0702182A (pt) distorção de campo reduzida em ferramentas médicas
US20100134101A1 (en) Broad-range magnetic sensor and manufacturing process thereof
US20090014420A1 (en) Wire electric discharge machining apparatus
KR940012688A (ko) 개선된 바르크하우젠 잡음억제를 갖는 자기 저항 장치 및 방법
US20140353785A1 (en) Low-consumption, amr-type, integrated magnetoresistor
WO2005079528A3 (en) Spin transfer magnetic element having low saturation magnetization free layers
WO2009084433A1 (ja) 磁気センサ及び磁気センサモジュール
WO2007035786A3 (en) Magnetic devices having stabilized free ferromagnetic layer or multilayered free ferromagnetic layer
KR970063046A (ko) 자기저항 효과 헤드
JP2012533188A5 (de)
JP2003142692A5 (de)
SG153012A1 (en) Magnetic element with thermally-assisted writing
WO2004074855A3 (en) Magnetic field sensor
WO2008050045A3 (fr) Dispositif magnetique a aimantation perpendiculaire et a couche intercalaire compensatrice d&#39;interactions
KR101737956B1 (ko) 스핀 편극 트랜지스터 소자
TW200606431A (en) Azimuth meter having spin-valve giant magneto-resistive elements
JP2009503833A (ja) 磁気抵抗素子
JPWO2010010872A1 (ja) 磁気センサ及び磁気センサモジュール
WO2008126136A1 (ja) 磁気ヘッド
JP2010101871A (ja) 電流センサ
JP2009145327A (ja) 磁界検出素子

Legal Events

Date Code Title Description
8364 No opposition during term of opposition