DE602007012026D1 - Polierzusammensetzung und Polierverfahren - Google Patents

Polierzusammensetzung und Polierverfahren

Info

Publication number
DE602007012026D1
DE602007012026D1 DE602007012026T DE602007012026T DE602007012026D1 DE 602007012026 D1 DE602007012026 D1 DE 602007012026D1 DE 602007012026 T DE602007012026 T DE 602007012026T DE 602007012026 T DE602007012026 T DE 602007012026T DE 602007012026 D1 DE602007012026 D1 DE 602007012026D1
Authority
DE
Germany
Prior art keywords
group
composition
polishing
anionic surfactant
polishing composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007012026T
Other languages
English (en)
Inventor
Atsunori Kawamura
Masayuki Hattori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2006211453A external-priority patent/JP2008041781A/ja
Priority claimed from JP2006211454A external-priority patent/JP5314839B2/ja
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of DE602007012026D1 publication Critical patent/DE602007012026D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472—Non-aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Disintegrating Or Milling (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE602007012026T 2006-08-02 2007-07-31 Polierzusammensetzung und Polierverfahren Active DE602007012026D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006211453A JP2008041781A (ja) 2006-08-02 2006-08-02 研磨用組成物及び研磨方法
JP2006211454A JP5314839B2 (ja) 2006-08-02 2006-08-02 研磨用組成物及び研磨方法

Publications (1)

Publication Number Publication Date
DE602007012026D1 true DE602007012026D1 (de) 2011-03-03

Family

ID=38961937

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007012026T Active DE602007012026D1 (de) 2006-08-02 2007-07-31 Polierzusammensetzung und Polierverfahren

Country Status (7)

Country Link
US (1) US8080476B2 (de)
EP (1) EP1894978B1 (de)
KR (1) KR101477796B1 (de)
AT (1) ATE496103T1 (de)
DE (1) DE602007012026D1 (de)
SG (1) SG139699A1 (de)
TW (1) TWI417371B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009164188A (ja) * 2007-12-28 2009-07-23 Fujimi Inc 研磨用組成物
JP2009164186A (ja) * 2007-12-28 2009-07-23 Fujimi Inc 研磨用組成物
JP2009187984A (ja) * 2008-02-01 2009-08-20 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法
US8506661B2 (en) * 2008-10-24 2013-08-13 Air Products & Chemicals, Inc. Polishing slurry for copper films
US8551887B2 (en) 2009-12-22 2013-10-08 Air Products And Chemicals, Inc. Method for chemical mechanical planarization of a copper-containing substrate
JP5587620B2 (ja) * 2010-01-25 2014-09-10 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP6077209B2 (ja) 2011-11-25 2017-02-08 株式会社フジミインコーポレーテッド 研磨用組成物
JP5838083B2 (ja) * 2011-12-09 2015-12-24 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
SG11201502768UA (en) 2012-11-02 2015-05-28 Fujimi Inc Polishing composition
CN103817603A (zh) * 2014-02-28 2014-05-28 张家港市互惠光电有限公司 一种板材角部加工用护套
WO2017163847A1 (ja) * 2016-03-25 2017-09-28 株式会社フジミインコーポレーテッド 研磨用組成物ならびに研磨方法および半導体基板の製造方法
KR20200038014A (ko) * 2018-10-02 2020-04-10 주식회사 케이씨텍 표면처리 조성물 및 그것을 이용한 표면처리 방법

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5428721A (en) 1990-02-07 1995-06-27 Kabushiki Kaisha Toshiba Data processing apparatus for editing image by using image conversion
JP3024823B2 (ja) * 1991-06-24 2000-03-27 花王株式会社 洗浄剤組成物
US5391721A (en) * 1993-02-04 1995-02-21 Wormald U.S., Inc. Aqueous film forming foam concentrates for hydrophilic combustible liquids and method for modifying viscosity of same
US5391258A (en) 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5575885A (en) 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US5858813A (en) 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US6025611A (en) * 1996-09-20 2000-02-15 The Board Of Regents Of The University Of Nebraska Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes
US6309560B1 (en) 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6126853A (en) 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5954997A (en) 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US5759917A (en) 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US6432828B2 (en) 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6423678B1 (en) * 1998-05-05 2002-07-23 Amway Corporation Alcohol ethoxylate-peg ether of glycerin
WO2000013217A1 (fr) 1998-08-31 2000-03-09 Hitachi Chemical Company, Ltd. Liquide abrasif pour le polissage de metaux et procede correspondant
JP4053165B2 (ja) 1998-12-01 2008-02-27 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US7250369B1 (en) 1998-12-28 2007-07-31 Hitachi, Ltd. Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same
US7208049B2 (en) * 2003-10-20 2007-04-24 Air Products And Chemicals, Inc. Process solutions containing surfactants used as post-chemical mechanical planarization treatment
US6479442B1 (en) * 1999-05-05 2002-11-12 Access Business Group International Llc Hydrotrope and skin conditioning agents for use in liquid detergent compositions
WO2001012739A1 (en) 1999-08-13 2001-02-22 Cabot Microelectronics Corporation Chemical mechanical polishing systems and methods for their use
TW501197B (en) 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
EP1223609A4 (de) 1999-08-26 2006-03-15 Hitachi Chemical Co Ltd Polirmittel für cmp und poliermethode
JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
JP2002075927A (ja) 2000-08-24 2002-03-15 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP2002110596A (ja) 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
JP2002164307A (ja) 2000-11-24 2002-06-07 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP2002231666A (ja) 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP3849091B2 (ja) * 2001-02-28 2006-11-22 Ｊｓｒ株式会社 化学機械研磨用水系分散体
SG144688A1 (en) 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
AU2002334406A1 (en) 2001-09-03 2003-03-18 Showa Denko K.K. Polishing composition
US20030219982A1 (en) 2002-05-23 2003-11-27 Hitachi Chemical Co., Ltd CMP (chemical mechanical polishing) polishing liquid for metal and polishing method
CN1665902A (zh) 2002-06-07 2005-09-07 昭和电工株式会社 金属抛光组合物,使用组合物进行抛光的方法以及使用抛光方法来生产晶片的方法
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
JP4083502B2 (ja) 2002-08-19 2008-04-30 株式会社フジミインコーポレーテッド 研磨方法及びそれに用いられる研磨用組成物
JP3981616B2 (ja) 2002-10-02 2007-09-26 株式会社フジミインコーポレーテッド 研磨用組成物
JP2004172606A (ja) * 2002-11-08 2004-06-17 Sumitomo Chem Co Ltd 金属研磨材組成物及び研磨方法
JP4350364B2 (ja) * 2002-12-12 2009-10-21 昭和電工株式会社 洗浄剤組成物、半導体ウェーハの洗浄方法および製造方法
JP2004349426A (ja) * 2003-05-21 2004-12-09 Jsr Corp Ｓｔｉ用化学機械研磨方法
JP2004134751A (ja) * 2003-07-28 2004-04-30 Hitachi Chem Co Ltd 研磨剤及び基板の研磨方法
US7485162B2 (en) 2003-09-30 2009-02-03 Fujimi Incorporated Polishing composition
JP2005294798A (ja) * 2004-03-08 2005-10-20 Asahi Glass Co Ltd 研磨剤および研磨方法
JP2006086462A (ja) 2004-09-17 2006-03-30 Fujimi Inc 研磨用組成物およびそれを用いた配線構造体の製造法

Also Published As

Publication number Publication date
TWI417371B (zh) 2013-12-01
KR101477796B1 (ko) 2014-12-30
US20080032505A1 (en) 2008-02-07
TW200831652A (en) 2008-08-01
KR20080012229A (ko) 2008-02-11
US8080476B2 (en) 2011-12-20
EP1894978B1 (de) 2011-01-19
EP1894978A2 (de) 2008-03-05
EP1894978A3 (de) 2009-10-21
ATE496103T1 (de) 2011-02-15
SG139699A1 (en) 2008-02-29

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