SG139699A1 - Polishing composition and polishing process - Google Patents

Polishing composition and polishing process

Info

Publication number
SG139699A1
SG139699A1 SG200705542-9A SG2007055429A SG139699A1 SG 139699 A1 SG139699 A1 SG 139699A1 SG 2007055429 A SG2007055429 A SG 2007055429A SG 139699 A1 SG139699 A1 SG 139699A1
Authority
SG
Singapore
Prior art keywords
group
polishing
composition
polishing composition
anionic surfactant
Prior art date
Application number
SG200705542-9A
Other languages
English (en)
Inventor
Atsunori Kawamura
Masayuki Hattori
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2006211454A external-priority patent/JP5314839B2/ja
Priority claimed from JP2006211453A external-priority patent/JP2008041781A/ja
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG139699A1 publication Critical patent/SG139699A1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472Non-aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Disintegrating Or Milling (AREA)
SG200705542-9A 2006-08-02 2007-07-30 Polishing composition and polishing process SG139699A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006211454A JP5314839B2 (ja) 2006-08-02 2006-08-02 研磨用組成物及び研磨方法
JP2006211453A JP2008041781A (ja) 2006-08-02 2006-08-02 研磨用組成物及び研磨方法

Publications (1)

Publication Number Publication Date
SG139699A1 true SG139699A1 (en) 2008-02-29

Family

ID=38961937

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200705542-9A SG139699A1 (en) 2006-08-02 2007-07-30 Polishing composition and polishing process

Country Status (7)

Country Link
US (1) US8080476B2 (de)
EP (1) EP1894978B1 (de)
KR (1) KR101477796B1 (de)
AT (1) ATE496103T1 (de)
DE (1) DE602007012026D1 (de)
SG (1) SG139699A1 (de)
TW (1) TWI417371B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009164188A (ja) * 2007-12-28 2009-07-23 Fujimi Inc 研磨用組成物
JP2009164186A (ja) * 2007-12-28 2009-07-23 Fujimi Inc 研磨用組成物
JP2009187984A (ja) * 2008-02-01 2009-08-20 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法
US8506661B2 (en) * 2008-10-24 2013-08-13 Air Products & Chemicals, Inc. Polishing slurry for copper films
US8551887B2 (en) 2009-12-22 2013-10-08 Air Products And Chemicals, Inc. Method for chemical mechanical planarization of a copper-containing substrate
JP5587620B2 (ja) * 2010-01-25 2014-09-10 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP6077209B2 (ja) 2011-11-25 2017-02-08 株式会社フジミインコーポレーテッド 研磨用組成物
JP5838083B2 (ja) * 2011-12-09 2015-12-24 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
JPWO2014069457A1 (ja) 2012-11-02 2016-09-08 株式会社フジミインコーポレーテッド 研磨用組成物
CN103817603A (zh) * 2014-02-28 2014-05-28 张家港市互惠光电有限公司 一种板材角部加工用护套
US10759969B2 (en) * 2016-03-25 2020-09-01 Fujimi Incorporated Polishing composition, polishing method, and method for manufacturing semiconductor substrate
KR20200038014A (ko) * 2018-10-02 2020-04-10 주식회사 케이씨텍 표면처리 조성물 및 그것을 이용한 표면처리 방법

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5428721A (en) * 1990-02-07 1995-06-27 Kabushiki Kaisha Toshiba Data processing apparatus for editing image by using image conversion
JP3024823B2 (ja) * 1991-06-24 2000-03-27 花王株式会社 洗浄剤組成物
US5391721A (en) * 1993-02-04 1995-02-21 Wormald U.S., Inc. Aqueous film forming foam concentrates for hydrophilic combustible liquids and method for modifying viscosity of same
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5575885A (en) * 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US6025611A (en) * 1996-09-20 2000-02-15 The Board Of Regents Of The University Of Nebraska Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes
US5954997A (en) * 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6309560B1 (en) 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6126853A (en) * 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6423678B1 (en) * 1998-05-05 2002-07-23 Amway Corporation Alcohol ethoxylate-peg ether of glycerin
KR100491465B1 (ko) 1998-08-31 2005-05-25 히다치 가세고교 가부시끼가이샤 금속용 연마액 및 연마 방법
JP4053165B2 (ja) * 1998-12-01 2008-02-27 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
AU1804300A (en) 1998-12-28 2000-07-31 Hitachi Chemical Company, Ltd. Materials for polishing liquid for metal, polishing liquid for metal, method forpreparation thereof and polishing method using the same
US7208049B2 (en) * 2003-10-20 2007-04-24 Air Products And Chemicals, Inc. Process solutions containing surfactants used as post-chemical mechanical planarization treatment
US6479442B1 (en) * 1999-05-05 2002-11-12 Access Business Group International Llc Hydrotrope and skin conditioning agents for use in liquid detergent compositions
CA2378771A1 (en) * 1999-08-13 2001-02-22 Cabot Microelectronics Corporation Chemical mechanical polishing systems and methods for their use
TW501197B (en) 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
CN1161826C (zh) 1999-08-26 2004-08-11 日立化成工业株式会社 化学机械研磨用研磨剂及研磨方法
JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
JP2002075927A (ja) 2000-08-24 2002-03-15 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP2002110596A (ja) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
JP2002164307A (ja) * 2000-11-24 2002-06-07 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP3849091B2 (ja) * 2001-02-28 2006-11-22 Jsr株式会社 化学機械研磨用水系分散体
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
AU2002334406A1 (en) 2001-09-03 2003-03-18 Showa Denko K.K. Polishing composition
US20030219982A1 (en) * 2002-05-23 2003-11-27 Hitachi Chemical Co., Ltd CMP (chemical mechanical polishing) polishing liquid for metal and polishing method
TW200401358A (en) 2002-06-07 2004-01-16 Showa Denko Kk Metal polish composition, polishing method using the composition and method for producing wafer using the polishing method
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
JP4083502B2 (ja) * 2002-08-19 2008-04-30 株式会社フジミインコーポレーテッド 研磨方法及びそれに用いられる研磨用組成物
JP3981616B2 (ja) * 2002-10-02 2007-09-26 株式会社フジミインコーポレーテッド 研磨用組成物
JP2004172606A (ja) * 2002-11-08 2004-06-17 Sumitomo Chem Co Ltd 金属研磨材組成物及び研磨方法
JP4350364B2 (ja) * 2002-12-12 2009-10-21 昭和電工株式会社 洗浄剤組成物、半導体ウェーハの洗浄方法および製造方法
JP2004349426A (ja) * 2003-05-21 2004-12-09 Jsr Corp Sti用化学機械研磨方法
JP2004134751A (ja) * 2003-07-28 2004-04-30 Hitachi Chem Co Ltd 研磨剤及び基板の研磨方法
TWI347969B (en) * 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
JP2005294798A (ja) * 2004-03-08 2005-10-20 Asahi Glass Co Ltd 研磨剤および研磨方法
JP2006086462A (ja) * 2004-09-17 2006-03-30 Fujimi Inc 研磨用組成物およびそれを用いた配線構造体の製造法

Also Published As

Publication number Publication date
KR20080012229A (ko) 2008-02-11
DE602007012026D1 (de) 2011-03-03
TWI417371B (zh) 2013-12-01
US20080032505A1 (en) 2008-02-07
TW200831652A (en) 2008-08-01
ATE496103T1 (de) 2011-02-15
EP1894978B1 (de) 2011-01-19
US8080476B2 (en) 2011-12-20
EP1894978A3 (de) 2009-10-21
KR101477796B1 (ko) 2014-12-30
EP1894978A2 (de) 2008-03-05

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