DE602004010061D1 - Hochzuverlässige, kostengünstige und thermisch verbesserte Halbleiterchip-Befestigungstechnologie mit AuSn - Google Patents

Hochzuverlässige, kostengünstige und thermisch verbesserte Halbleiterchip-Befestigungstechnologie mit AuSn

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Publication number
DE602004010061D1
DE602004010061D1 DE602004010061T DE602004010061T DE602004010061D1 DE 602004010061 D1 DE602004010061 D1 DE 602004010061D1 DE 602004010061 T DE602004010061 T DE 602004010061T DE 602004010061 T DE602004010061 T DE 602004010061T DE 602004010061 D1 DE602004010061 D1 DE 602004010061D1
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DE
Germany
Prior art keywords
ausn
semiconductor chip
low cost
high reliability
chip mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004010061T
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English (en)
Other versions
DE602004010061T2 (de
Inventor
Sam-Hyo Hong
Henrik Izard Hoyer
Jeffrey Hume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
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Infineon Technologies AG
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Publication of DE602004010061D1 publication Critical patent/DE602004010061D1/de
Application granted granted Critical
Publication of DE602004010061T2 publication Critical patent/DE602004010061T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01L2924/1025—Semiconducting materials
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    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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    • H01L2924/19043—Component type being a resistor
DE602004010061T 2004-03-09 2004-03-09 Hochzuverlässige, kostengünstige und thermisch verbesserte Halbleiterchip-Befestigungstechnologie mit AuSn Expired - Lifetime DE602004010061T2 (de)

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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7327029B2 (en) * 2005-09-27 2008-02-05 Agere Systems, Inc. Integrated circuit device incorporating metallurigical bond to enhance thermal conduction to a heat sink
JP2009054892A (ja) * 2007-08-28 2009-03-12 Panasonic Electric Works Co Ltd Ｌｅｄチップの実装方法
US8828804B2 (en) * 2008-04-30 2014-09-09 Infineon Technologies Ag Semiconductor device and method
US7754533B2 (en) * 2008-08-28 2010-07-13 Infineon Technologies Ag Method of manufacturing a semiconductor device
US8637379B2 (en) * 2009-10-08 2014-01-28 Infineon Technologies Ag Device including a semiconductor chip and a carrier and fabrication method
US8994182B2 (en) 2012-12-21 2015-03-31 Cree, Inc. Dielectric solder barrier for semiconductor devices
US8970010B2 (en) 2013-03-15 2015-03-03 Cree, Inc. Wafer-level die attach metallization
JP5866561B1 (ja) * 2014-12-26 2016-02-17 パナソニックＩｐマネジメント株式会社 発光装置及びその製造方法
US9893027B2 (en) 2016-04-07 2018-02-13 Nxp Usa, Inc. Pre-plated substrate for die attachment
EP3551034A1 (de) 2016-12-07 2019-10-16 Progenity, Inc. Verfahren, vorrichtungen und systeme zur detektion des magen-darm-trakts
EP3554541B1 (de) 2016-12-14 2023-06-07 Biora Therapeutics, Inc. Behandlung einer erkrankung des gastrointestinaltraktes mit einem chemokin/chemokin-rezeptor-inhibitor
WO2020106757A1 (en) 2018-11-19 2020-05-28 Progenity, Inc. Ingestible device for delivery of therapeutic agent to the gastrointestinal tract
EP3870261B1 (de) 2019-12-13 2024-01-31 Biora Therapeutics, Inc. Einnehmbare vorrichtung zur abgabe eines therapeutischen mittels an den magen-darm-trakt
CN114171422B (zh) * 2022-02-11 2022-06-03 浙江里阳半导体有限公司 半导体器件的制造方法及其蒸镀缺陷的检测方法

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648357A (en) * 1969-07-31 1972-03-14 Gen Dynamics Corp Method for sealing microelectronic device packages
JPS556839A (en) * 1978-06-28 1980-01-18 Nec Corp Semiconductor device
JPS5837713B2 (ja) * 1978-12-01 1983-08-18 富士通株式会社 半導体レ−ザ−装置の製造方法
US4518112A (en) * 1982-12-30 1985-05-21 International Business Machines Corporation Process for controlled braze joining of electronic packaging elements
JPS6156422A (ja) * 1984-08-28 1986-03-22 Nec Corp 半導体装置
JPS6223118A (ja) * 1985-07-24 1987-01-31 Hitachi Ltd 半導体装置
US4875617A (en) * 1987-01-20 1989-10-24 Citowsky Elya L Gold-tin eutectic lead bonding method and structure
JPH0793329B2 (ja) * 1987-03-10 1995-10-09 日本鉱業株式会社 半導体ペレツトの固定方法
GB2221570B (en) * 1988-08-04 1992-02-12 Stc Plc Bonding a semiconductor to a substrate
DE4025622A1 (de) * 1990-08-13 1992-02-20 Siemens Ag Anschlusskontakthoecker und verfahren zu dessen herstellung
JPH0665376B2 (ja) * 1990-10-19 1994-08-24 日本碍子株式会社 セラミック粒の製造方法
JP2605502B2 (ja) * 1991-05-14 1997-04-30 三菱電機株式会社 パッケージ
US5353193A (en) * 1993-02-26 1994-10-04 Lsi Logic Corporation High power dissipating packages with matched heatspreader heatsink assemblies
JPH06349866A (ja) * 1993-06-10 1994-12-22 Sumitomo Electric Ind Ltd 半導体ウェハ及び半導体素子のダイボンディング方法
US5384690A (en) * 1993-07-27 1995-01-24 International Business Machines Corporation Flex laminate package for a parallel processor
JPH07130685A (ja) * 1993-11-05 1995-05-19 Sumitomo Electric Ind Ltd 半導体ウェーハの製造方法
GB2300375B (en) * 1994-08-01 1998-02-25 Nippon Denso Co Bonding method for electric element
JPH09283909A (ja) * 1996-04-19 1997-10-31 Hitachi Ltd 電子回路装置およびその製造方法
US6027957A (en) * 1996-06-27 2000-02-22 University Of Maryland Controlled solder interdiffusion for high power semiconductor laser diode die bonding
US5847929A (en) * 1996-06-28 1998-12-08 International Business Machines Corporation Attaching heat sinks directly to flip chips and ceramic chip carriers
JPH1079471A (ja) * 1996-09-05 1998-03-24 Hitachi Ltd 半導体装置、その製造方法及びフレキシブルカード
JP3796016B2 (ja) * 1997-03-28 2006-07-12 三洋電機株式会社 半導体装置
JPH11204884A (ja) * 1998-01-07 1999-07-30 Mitsubishi Electric Corp ハンダ形成方法
TW380284B (en) * 1998-09-09 2000-01-21 Promos Technologies Inc Method for improving etching uniformity during a wet etching process
US6180505B1 (en) * 1999-01-07 2001-01-30 International Business Machines Corporation Process for forming a copper-containing film
JP2002151541A (ja) * 2000-11-15 2002-05-24 Hitachi Ltd 電子部品
JP4497737B2 (ja) * 2001-03-12 2010-07-07 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2003037231A (ja) * 2001-07-23 2003-02-07 Ibiden Co Ltd モジュール用基板
JP2003068751A (ja) * 2001-08-27 2003-03-07 Nec Yamagata Ltd 半導体装置及びその製造方法
JP4514400B2 (ja) * 2001-09-27 2010-07-28 古河電気工業株式会社 部材の接合方法、その方法で得られた接合部材
JP3816821B2 (ja) * 2002-03-20 2006-08-30 株式会社住友金属エレクトロデバイス 高周波用パワーモジュール基板及びその製造方法
US6660548B2 (en) * 2002-03-27 2003-12-09 Intel Corporation Packaging of multiple active optical devices
US6833289B2 (en) * 2003-05-12 2004-12-21 Intel Corporation Fluxless die-to-heat spreader bonding using thermal interface material

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US7608485B2 (en) 2009-10-27
EP1575089A1 (de) 2005-09-14
US20070181987A1 (en) 2007-08-09
EP1575089B1 (de) 2007-11-14
JP2007528601A (ja) 2007-10-11
DE602004010061T2 (de) 2008-09-11
WO2005086220A1 (en) 2005-09-15
JP4700681B2 (ja) 2011-06-15

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