DE602004004002D1 - Verfahren und Speichersystem basierend auf dualem data strobe mode and einfachem data strobe mode mit Dateninversion - Google Patents

Verfahren und Speichersystem basierend auf dualem data strobe mode and einfachem data strobe mode mit Dateninversion

Info

Publication number
DE602004004002D1
DE602004004002D1 DE602004004002T DE602004004002T DE602004004002D1 DE 602004004002 D1 DE602004004002 D1 DE 602004004002D1 DE 602004004002 T DE602004004002 T DE 602004004002T DE 602004004002 T DE602004004002 T DE 602004004002T DE 602004004002 D1 DE602004004002 D1 DE 602004004002D1
Authority
DE
Germany
Prior art keywords
strobe mode
data strobe
data
storage system
system based
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004004002T
Other languages
English (en)
Other versions
DE602004004002T2 (de
Inventor
Seong-Jin Jang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602004004002D1 publication Critical patent/DE602004004002D1/de
Application granted granted Critical
Publication of DE602004004002T2 publication Critical patent/DE602004004002T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1045—Read-write mode select circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1075—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for multiport memories each having random access ports and serial ports, e.g. video RAM

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Dram (AREA)
DE602004004002T 2003-07-04 2004-06-17 Verfahren und Speichersystem basierend auf dualem data strobe mode and einfachem data strobe mode mit Dateninversion Expired - Lifetime DE602004004002T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR2003045413 2003-07-04
KR1020030045413A KR100546339B1 (ko) 2003-07-04 2003-07-04 차동 데이터 스트로빙 모드와 데이터 반전 스킴을 가지는단일 데이터 스트로빙 모드를 선택적으로 구현할 수 있는반도체 장치
US733413 2003-12-12
US10/733,413 US7269699B2 (en) 2003-07-04 2003-12-12 Method and memory system having mode selection between dual data strobe mode and single data strobe mode with inversion

Publications (2)

Publication Number Publication Date
DE602004004002D1 true DE602004004002D1 (de) 2007-02-15
DE602004004002T2 DE602004004002T2 (de) 2007-11-15

Family

ID=33550294

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004004002T Expired - Lifetime DE602004004002T2 (de) 2003-07-04 2004-06-17 Verfahren und Speichersystem basierend auf dualem data strobe mode and einfachem data strobe mode mit Dateninversion

Country Status (6)

Country Link
US (1) US7269699B2 (de)
EP (1) EP1494242B1 (de)
JP (1) JP4989022B2 (de)
KR (1) KR100546339B1 (de)
CN (1) CN100530415C (de)
DE (1) DE602004004002T2 (de)

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KR20130098681A (ko) * 2012-02-28 2013-09-05 삼성전자주식회사 반도체 메모리 장치
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KR102017809B1 (ko) 2013-02-27 2019-09-03 에스케이하이닉스 주식회사 칩 다이 및 이를 포함하는 반도체 메모리 장치
US9740610B2 (en) 2014-12-24 2017-08-22 Intel Corporation Polarity based data transfer function for volatile memory
KR20170111572A (ko) 2016-03-29 2017-10-12 삼성전자주식회사 반도체 메모리 장치 및 이의 동작 방법
US10692555B2 (en) 2016-06-29 2020-06-23 Samsung Electronics Co., Ltd. Semiconductor memory devices enabling read strobe mode and related methods of operating semiconductor memory devices
US10186309B2 (en) 2016-06-29 2019-01-22 Samsung Electronics Co., Ltd. Methods of operating semiconductor memory devices and semiconductor memory devices
KR102641515B1 (ko) 2016-09-19 2024-02-28 삼성전자주식회사 메모리 장치 및 그것의 클록 분배 방법
EP3931667A4 (de) 2019-02-27 2022-07-13 Rambus Inc. Niederleistungsspeicher mit bedarfsabhängiger bandbreitenverstärkung
CN111031296B (zh) * 2019-12-17 2021-05-14 南京巨鲨显示科技有限公司 一种光端机单、双纤传输模式自适应系统
US11309013B2 (en) * 2020-04-29 2022-04-19 Samsung Electronics Co., Ltd. Memory device for reducing resources used for training
US11756592B2 (en) 2020-09-29 2023-09-12 Samsung Electronics Co., Ltd. Memory device supporting DBI interface and operating method of memory device
CN115440265B (zh) * 2021-06-01 2024-05-17 长鑫存储技术有限公司 存储器
CN115565563A (zh) * 2021-07-02 2023-01-03 脸萌有限公司 存储电路、芯片、数据处理方法和电子设备
TWI763556B (zh) * 2021-07-12 2022-05-01 瑞昱半導體股份有限公司 記憶體系統及其記憶體存取介面裝置

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Also Published As

Publication number Publication date
JP2005032417A (ja) 2005-02-03
US20050005053A1 (en) 2005-01-06
JP4989022B2 (ja) 2012-08-01
US7269699B2 (en) 2007-09-11
CN100530415C (zh) 2009-08-19
CN1577609A (zh) 2005-02-09
DE602004004002T2 (de) 2007-11-15
KR100546339B1 (ko) 2006-01-26
KR20050003894A (ko) 2005-01-12
EP1494242A1 (de) 2005-01-05
EP1494242B1 (de) 2007-01-03

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