DE60140143D1 - Halbleiterbauelement und tragbare elektronische vorrichtung - Google Patents
Halbleiterbauelement und tragbare elektronische vorrichtungInfo
- Publication number
- DE60140143D1 DE60140143D1 DE60140143T DE60140143T DE60140143D1 DE 60140143 D1 DE60140143 D1 DE 60140143D1 DE 60140143 T DE60140143 T DE 60140143T DE 60140143 T DE60140143 T DE 60140143T DE 60140143 D1 DE60140143 D1 DE 60140143D1
- Authority
- DE
- Germany
- Prior art keywords
- electronic device
- semiconductor element
- portable electronic
- portable
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000349675A JP3950294B2 (ja) | 2000-11-16 | 2000-11-16 | 半導体装置 |
PCT/JP2001/009887 WO2002041401A1 (fr) | 2000-11-16 | 2001-11-13 | Dispositif semi-conducteur et appareil electronique portable |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60140143D1 true DE60140143D1 (de) | 2009-11-19 |
Family
ID=18823032
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60140143T Expired - Lifetime DE60140143D1 (de) | 2000-11-16 | 2001-11-13 | Halbleiterbauelement und tragbare elektronische vorrichtung |
Country Status (7)
Country | Link |
---|---|
US (1) | US6969893B2 (de) |
EP (1) | EP1343207B1 (de) |
JP (1) | JP3950294B2 (de) |
KR (1) | KR100560185B1 (de) |
DE (1) | DE60140143D1 (de) |
TW (1) | TW563243B (de) |
WO (1) | WO2002041401A1 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7825488B2 (en) | 2006-05-31 | 2010-11-02 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuits and modular methods of forming the same |
US8089129B2 (en) * | 2002-08-14 | 2012-01-03 | Advanced Analogic Technologies, Inc. | Isolated CMOS transistors |
US6936898B2 (en) * | 2002-12-31 | 2005-08-30 | Transmeta Corporation | Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions |
DE10300687A1 (de) * | 2003-01-10 | 2004-07-22 | Infineon Technologies Ag | Integrierte Halbleiterschaltung insbesondere Halbleiterspeicherschaltung und Herstellungsverfahren dafür |
US7135753B2 (en) * | 2003-12-05 | 2006-11-14 | International Rectifier Corporation | Structure and method for III-nitride monolithic power IC |
US7304354B2 (en) | 2004-02-17 | 2007-12-04 | Silicon Space Technology Corp. | Buried guard ring and radiation hardened isolation structures and fabrication methods |
JP4578878B2 (ja) * | 2004-07-27 | 2010-11-10 | パナソニック株式会社 | 半導体集積回路 |
KR100797896B1 (ko) * | 2004-11-12 | 2008-01-24 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 다양한 동작 전압들을 갖는 집적 회로들을 절연시키기 위한반도체 구조 |
JP2006228910A (ja) * | 2005-02-16 | 2006-08-31 | Matsushita Electric Ind Co Ltd | 半導体装置 |
WO2006131986A1 (ja) * | 2005-06-10 | 2006-12-14 | Fujitsu Limited | 半導体装置、半導体システム、および半導体装置の製造方法 |
US20070029621A1 (en) * | 2005-08-05 | 2007-02-08 | Nec Electronics Corporation | Semiconductor integrated circuit device |
JP5036719B2 (ja) | 2005-10-14 | 2012-09-26 | シリコン・スペース・テクノロジー・コーポレイション | 耐放射線性のあるアイソレーション構造及びその製造方法 |
JP4890838B2 (ja) * | 2005-11-17 | 2012-03-07 | ルネサスエレクトロニクス株式会社 | 半導体集積回路のレイアウト設計方法、及びレイアウト設計ツール |
US7479418B2 (en) * | 2006-01-11 | 2009-01-20 | International Business Machines Corporation | Methods of applying substrate bias to SOI CMOS circuits |
WO2008012899A1 (fr) * | 2006-07-27 | 2008-01-31 | Fujitsu Limited | Dispositif de circuit à semi-conducteurs, système de dispositif de circuit à semi-conducteurs et procédé de fabrication pour le dispositif de circuit à semi-conducteurs |
JP2009283867A (ja) * | 2008-05-26 | 2009-12-03 | Toshiba Corp | 半導体装置 |
TWI474305B (zh) * | 2008-07-31 | 2015-02-21 | Sitronix Technology Corp | The polarity switching structure of point conversion system |
US8273617B2 (en) | 2009-09-30 | 2012-09-25 | Suvolta, Inc. | Electronic devices and systems, and methods for making and using the same |
US8421162B2 (en) | 2009-09-30 | 2013-04-16 | Suvolta, Inc. | Advanced transistors with punch through suppression |
JP2013511163A (ja) * | 2009-11-17 | 2013-03-28 | スボルタ,インコーポレーテッド | 電子デバイス及びシステム、並びにその製造方法及び使用方法 |
JP2012114274A (ja) * | 2010-11-25 | 2012-06-14 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US8765607B2 (en) * | 2011-06-01 | 2014-07-01 | Freescale Semiconductor, Inc. | Active tiling placement for improved latch-up immunity |
US10038058B2 (en) | 2016-05-07 | 2018-07-31 | Silicon Space Technology Corporation | FinFET device structure and method for forming same |
US9831134B1 (en) | 2016-09-28 | 2017-11-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor device having deep wells |
JP6776192B2 (ja) * | 2017-06-28 | 2020-10-28 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5984572A (ja) | 1982-11-08 | 1984-05-16 | Nec Corp | 半導体装置 |
JPH06216346A (ja) | 1992-11-30 | 1994-08-05 | Sony Corp | 半導体装置 |
JP3406949B2 (ja) | 1995-01-31 | 2003-05-19 | キヤノン株式会社 | 半導体集積回路装置 |
JPH1022462A (ja) * | 1996-06-28 | 1998-01-23 | Sharp Corp | 半導体装置及びその製造方法 |
JPH10163342A (ja) | 1996-12-04 | 1998-06-19 | Sharp Corp | 半導体装置 |
JPH10199968A (ja) | 1997-01-10 | 1998-07-31 | Sony Corp | 半導体装置及び半導体装置の素子間分離溝の形成方法 |
JP4253052B2 (ja) * | 1997-04-08 | 2009-04-08 | 株式会社東芝 | 半導体装置 |
JP3097652B2 (ja) | 1998-03-31 | 2000-10-10 | 日本電気株式会社 | 半導体集積回路装置の製造方法 |
JP4333932B2 (ja) | 1998-06-30 | 2009-09-16 | シャープ株式会社 | 半導体装置および半導体装置を製造する方法 |
US6143593A (en) * | 1998-09-29 | 2000-11-07 | Conexant Systems, Inc. | Elevated channel MOSFET |
JP2000294624A (ja) * | 1999-04-05 | 2000-10-20 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
-
2000
- 2000-11-16 JP JP2000349675A patent/JP3950294B2/ja not_active Expired - Fee Related
-
2001
- 2001-11-13 WO PCT/JP2001/009887 patent/WO2002041401A1/ja active IP Right Grant
- 2001-11-13 EP EP01982765A patent/EP1343207B1/de not_active Expired - Lifetime
- 2001-11-13 DE DE60140143T patent/DE60140143D1/de not_active Expired - Lifetime
- 2001-11-13 US US10/416,856 patent/US6969893B2/en not_active Expired - Fee Related
- 2001-11-13 KR KR1020037006707A patent/KR100560185B1/ko not_active IP Right Cessation
- 2001-11-16 TW TW090128513A patent/TW563243B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20030051841A (ko) | 2003-06-25 |
EP1343207A4 (de) | 2008-01-23 |
US20040026743A1 (en) | 2004-02-12 |
WO2002041401A1 (fr) | 2002-05-23 |
EP1343207A1 (de) | 2003-09-10 |
US6969893B2 (en) | 2005-11-29 |
EP1343207B1 (de) | 2009-10-07 |
JP3950294B2 (ja) | 2007-07-25 |
KR100560185B1 (ko) | 2006-03-13 |
TW563243B (en) | 2003-11-21 |
JP2002158293A (ja) | 2002-05-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |