DE60119470D1 - Halbleiterlaser mit Gebiet ohne Stromzuführung in der Nähe einer Resonatorendfläche und zugehöriges Herstellungsverfahren - Google Patents

Halbleiterlaser mit Gebiet ohne Stromzuführung in der Nähe einer Resonatorendfläche und zugehöriges Herstellungsverfahren

Info

Publication number
DE60119470D1
DE60119470D1 DE60119470T DE60119470T DE60119470D1 DE 60119470 D1 DE60119470 D1 DE 60119470D1 DE 60119470 T DE60119470 T DE 60119470T DE 60119470 T DE60119470 T DE 60119470T DE 60119470 D1 DE60119470 D1 DE 60119470D1
Authority
DE
Germany
Prior art keywords
resonatorendfläche
vicinity
region
power supply
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60119470T
Other languages
English (en)
Other versions
DE60119470T2 (de
Inventor
Toshiaki Kuniyasu
Fusao Yamanaka
Toshiaki Fukunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000360432A external-priority patent/JP2002164618A/ja
Priority claimed from JP2001038689A external-priority patent/JP2002190644A/ja
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Publication of DE60119470D1 publication Critical patent/DE60119470D1/de
Application granted granted Critical
Publication of DE60119470T2 publication Critical patent/DE60119470T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Geometry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE60119470T 2000-10-12 2001-10-11 Halbleiterlaser mit Gebiet ohne Stromzuführung in der Nähe einer Resonatorendfläche und zugehöriges Herstellungsverfahren Expired - Lifetime DE60119470T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2000311405 2000-10-12
JP2000311405 2000-10-12
JP2000360432A JP2002164618A (ja) 2000-11-28 2000-11-28 半導体レーザ素子
JP2000360432 2000-11-28
JP2001038689 2001-02-15
JP2001038689A JP2002190644A (ja) 2000-10-12 2001-02-15 半導体レーザ素子およびその製造方法

Publications (2)

Publication Number Publication Date
DE60119470D1 true DE60119470D1 (de) 2006-06-14
DE60119470T2 DE60119470T2 (de) 2007-04-19

Family

ID=27344912

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60129261T Expired - Lifetime DE60129261T2 (de) 2000-10-12 2001-10-11 Halbleiterlaser mit Gebiet ohne Stromzuführung in der Nähe einer Resonatorendfläche
DE60119470T Expired - Lifetime DE60119470T2 (de) 2000-10-12 2001-10-11 Halbleiterlaser mit Gebiet ohne Stromzuführung in der Nähe einer Resonatorendfläche und zugehöriges Herstellungsverfahren

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE60129261T Expired - Lifetime DE60129261T2 (de) 2000-10-12 2001-10-11 Halbleiterlaser mit Gebiet ohne Stromzuführung in der Nähe einer Resonatorendfläche

Country Status (3)

Country Link
US (2) US6888866B2 (de)
EP (2) EP1198042B1 (de)
DE (2) DE60129261T2 (de)

Families Citing this family (21)

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JP4408185B2 (ja) * 2001-06-22 2010-02-03 富士フイルム株式会社 半導体レーザ装置
JP4504610B2 (ja) * 2002-03-01 2010-07-14 株式会社日立製作所 リッジ型半導体レーザ素子
JP2003273464A (ja) * 2002-03-19 2003-09-26 Mitsubishi Electric Corp リッジ導波路型半導体レーザ装置
JP4480948B2 (ja) * 2002-07-15 2010-06-16 日本オプネクスト株式会社 半導体レーザ素子及びその製造方法
JP2004158615A (ja) * 2002-11-06 2004-06-03 Mitsubishi Electric Corp 半導体レーザ装置
JP4472278B2 (ja) * 2003-06-26 2010-06-02 三菱電機株式会社 半導体レーザ素子
JP2005033021A (ja) * 2003-07-04 2005-02-03 Sumitomo Electric Ind Ltd 半導体光素子及びその製造方法
JP2005158800A (ja) * 2003-11-20 2005-06-16 Sharp Corp 半導体装置の製造方法及びその製造方法により製造された半導体装置
JP2006148032A (ja) * 2004-11-25 2006-06-08 Toshiba Corp 半導体レーザ装置
US20070153855A1 (en) * 2005-01-17 2007-07-05 Tetsuya Suzuki Semiconductor optical device having broad optical spectral luminescence characteristic and method of manufacturing the same, as well as external resonator type semiconductor laser using the same
EP1854189B1 (de) 2005-02-18 2015-04-08 Binoptics Corporation Hochzuverlässige photonische vorrichtungen mit geätzten facetten
JP2006303299A (ja) * 2005-04-22 2006-11-02 Sharp Corp 半導体レーザ
KR100764393B1 (ko) * 2006-02-22 2007-10-05 삼성전기주식회사 고출력 어레이형 반도체 레이저 장치 제조방법
US20120223354A1 (en) * 2009-10-18 2012-09-06 Technion-Research & Development Foundation Semiconductor two-photo device
US8571080B2 (en) * 2009-12-02 2013-10-29 Massachusetts Institute Of Technology High efficiency slab-coupled optical waveguide laser and amplifier
RU2549553C2 (ru) * 2013-07-30 2015-04-27 Общество с ограниченной ответственностью "Новолюм" Инжекционный лазер
RU2557359C2 (ru) * 2013-10-09 2015-07-20 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Лазер-тиристор
JP7121536B2 (ja) * 2018-05-18 2022-08-18 株式会社堀場製作所 半導体レーザ素子の製造方法及びその半導体レーザ装置並びにガス分析装置
CN113574750A (zh) * 2018-12-31 2021-10-29 恩耐公司 用于差分电流注入的方法、系统、设备
CN110764185B (zh) * 2019-10-12 2021-01-01 天津大学 一种低损耗铌酸锂薄膜光波导的制备方法
CN113345808B (zh) * 2021-08-05 2021-10-29 度亘激光技术（苏州）有限公司 一种半导体器件和热沉键合的方法

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JPS54115088A (en) * 1978-02-28 1979-09-07 Nec Corp Double hetero junction laser element of stripe type
US4371966A (en) * 1980-11-06 1983-02-01 Xerox Corporation Heterostructure lasers with combination active strip and passive waveguide strip
US4620308A (en) 1985-10-30 1986-10-28 Lectromelt Corporation Arc furnace electrode control
JPS6338279A (ja) 1986-08-04 1988-02-18 Sharp Corp 半導体レーザ装置の製造方法
JPH03222488A (ja) * 1990-01-29 1991-10-01 Furukawa Electric Co Ltd:The 半導体レーザ素子及びその製造方法
JPH05327112A (ja) 1992-05-20 1993-12-10 Sanyo Electric Co Ltd 半導体レーザの製造方法
US5394421A (en) * 1993-01-11 1995-02-28 Rohm Co., Ltd. Semiconductor laser device including a step electrode in a form of eaves
JPH09298340A (ja) * 1996-04-30 1997-11-18 Fuji Photo Film Co Ltd 半導体レーザを用いたレーザ発光装置
JPH10163563A (ja) 1996-11-29 1998-06-19 Furukawa Electric Co Ltd:The 半導体レーザ
JPH10233556A (ja) * 1997-02-20 1998-09-02 Mitsubishi Electric Corp リッジ型半導体レーザダイオードとその製造方法
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JP3753216B2 (ja) * 1997-11-25 2006-03-08 富士写真フイルム株式会社 半導体レーザ装置
JP3317335B2 (ja) * 1998-02-10 2002-08-26 富士写真フイルム株式会社 半導体レーザ装置
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Also Published As

Publication number Publication date
US20050164420A1 (en) 2005-07-28
EP1198042B1 (de) 2006-05-10
EP1583187B1 (de) 2007-07-04
US6888866B2 (en) 2005-05-03
DE60129261T2 (de) 2008-05-08
US20020061044A1 (en) 2002-05-23
EP1198042A3 (de) 2004-04-28
EP1198042A2 (de) 2002-04-17
DE60119470T2 (de) 2007-04-19
DE60129261D1 (de) 2007-08-16
EP1583187A1 (de) 2005-10-05

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