DE60021505D1 - Hochleistungshalbleiterlaser mit Strombegrenzung und indexgeführter Struktur - Google Patents
Hochleistungshalbleiterlaser mit Strombegrenzung und indexgeführter StrukturInfo
- Publication number
- DE60021505D1 DE60021505D1 DE60021505T DE60021505T DE60021505D1 DE 60021505 D1 DE60021505 D1 DE 60021505D1 DE 60021505 T DE60021505 T DE 60021505T DE 60021505 T DE60021505 T DE 60021505T DE 60021505 D1 DE60021505 D1 DE 60021505D1
- Authority
- DE
- Germany
- Prior art keywords
- index
- semiconductor laser
- power semiconductor
- current limitation
- guided structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
- H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32986699 | 1999-11-19 | ||
JP32986699A JP2001148541A (ja) | 1999-11-19 | 1999-11-19 | 半導体発光装置およびその半導体発光装置を励起光源に用いた固体レーザ装置 |
JP2000031733 | 2000-02-09 | ||
JP2000031733A JP2001223436A (ja) | 2000-02-09 | 2000-02-09 | 半導体レーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60021505D1 true DE60021505D1 (de) | 2005-09-01 |
DE60021505T2 DE60021505T2 (de) | 2006-06-01 |
Family
ID=26573359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60021505T Expired - Lifetime DE60021505T2 (de) | 1999-11-19 | 2000-11-14 | Hochleistungshalbleiterlaser mit Strombegrenzung und indexgeführter Struktur |
Country Status (3)
Country | Link |
---|---|
US (1) | US6516016B1 (de) |
EP (1) | EP1104057B1 (de) |
DE (1) | DE60021505T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6822990B2 (en) * | 2000-09-08 | 2004-11-23 | Mitsui Chemicals, Inc. | Semiconductor laser device |
JP4033626B2 (ja) * | 2000-10-06 | 2008-01-16 | 日本オプネクスト株式会社 | 半導体レーザ装置の製造方法 |
EP1583187B1 (de) * | 2000-10-12 | 2007-07-04 | FUJIFILM Corporation | Halbleiterlaser mit Gebiet ohne Stromzuführung in der Nähe einer Resonatorendfläche |
JP2002299765A (ja) * | 2001-04-03 | 2002-10-11 | Sony Corp | 半導体レーザ素子及びその作製方法 |
US6954477B2 (en) * | 2001-04-03 | 2005-10-11 | Sony Corporation | Semiconductor laser device and fabrication method thereof |
JP2002305352A (ja) * | 2001-04-05 | 2002-10-18 | Fuji Photo Film Co Ltd | 半導体レーザ素子 |
JP2003069148A (ja) | 2001-08-27 | 2003-03-07 | Fuji Photo Film Co Ltd | 半導体レーザ素子 |
JP4408185B2 (ja) * | 2001-06-22 | 2010-02-03 | 富士フイルム株式会社 | 半導体レーザ装置 |
CN1259760C (zh) | 2001-08-31 | 2006-06-14 | 三井化学株式会社 | 半导体激光元件 |
JP2003289175A (ja) | 2002-01-28 | 2003-10-10 | Sharp Corp | 半導体レーザ素子 |
US20030235225A1 (en) * | 2002-06-22 | 2003-12-25 | Rick Glew | Guided self-aligned laser structure with integral current blocking layer |
US7801194B2 (en) * | 2002-07-01 | 2010-09-21 | Sharp Kabushiki Kaisha | Semiconductor laser device and optical disk unit using the same |
JP4317357B2 (ja) * | 2002-11-18 | 2009-08-19 | シャープ株式会社 | 半導体レーザ素子およびその製造方法 |
DE102014016889A1 (de) * | 2014-11-15 | 2016-05-19 | Mbda Deutschland Gmbh | Überwachungsvorrichtung für einen Laserstrahl |
US9755403B2 (en) * | 2015-06-24 | 2017-09-05 | King Abdullah University Of Science And Technology | Controlling the emission wavelength in group III-V semiconductor laser diodes |
US10084282B1 (en) | 2017-08-14 | 2018-09-25 | The United States Of America As Represented By The Secretary Of The Air Force | Fundamental mode operation in broad area quantum cascade lasers |
US11031753B1 (en) | 2017-11-13 | 2021-06-08 | The Government Of The United States Of America As Represented By The Secretary Of The Air Force | Extracting the fundamental mode in broad area quantum cascade lasers |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5212704A (en) * | 1991-11-27 | 1993-05-18 | At&T Bell Laboratories | Article comprising a strained layer quantum well laser |
JPH0750445A (ja) * | 1993-06-02 | 1995-02-21 | Rohm Co Ltd | 半導体レーザの製法 |
JP2914093B2 (ja) * | 1993-06-04 | 1999-06-28 | 住友電気工業株式会社 | 半導体レーザ |
US5379312A (en) * | 1993-10-25 | 1995-01-03 | Xerox Corporation | Semiconductor laser with tensile-strained etch-stop layer |
EP0695007B1 (de) * | 1994-07-04 | 2000-06-14 | Mitsubishi Chemical Corporation | Halbleitervorrichtung und Herstellungsverfahren |
JPH0888439A (ja) * | 1994-09-16 | 1996-04-02 | Rohm Co Ltd | 半導体レーザおよびその製法 |
JPH10504142A (ja) * | 1995-06-16 | 1998-04-14 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 半導体ダイオードレーザ及びその製造方法 |
JPH09162470A (ja) * | 1995-12-13 | 1997-06-20 | Nec Corp | 2波長レーザ発振器 |
US6055255A (en) * | 1996-02-01 | 2000-04-25 | Sharp Kabushiki Kaisha | Semiconductor laser device and method for producing the same |
CN1129218C (zh) * | 1996-03-01 | 2003-11-26 | 松下电器产业株式会社 | 半导体激光器及劈开方法 |
EP0814548B1 (de) * | 1996-06-17 | 2003-10-29 | Fuji Photo Film Co., Ltd. | Halbleiterlaser |
JP3888487B2 (ja) | 1997-08-29 | 2007-03-07 | 富士フイルムホールディングス株式会社 | 半導体レーザおよび該半導体レーザを用いたレーザ発光装置 |
JPH11274635A (ja) * | 1998-03-19 | 1999-10-08 | Hitachi Ltd | 半導体発光装置 |
-
2000
- 2000-11-14 DE DE60021505T patent/DE60021505T2/de not_active Expired - Lifetime
- 2000-11-14 EP EP00124832A patent/EP1104057B1/de not_active Expired - Lifetime
- 2000-11-20 US US09/715,192 patent/US6516016B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE60021505T2 (de) | 2006-06-01 |
US6516016B1 (en) | 2003-02-04 |
EP1104057B1 (de) | 2005-07-27 |
EP1104057A2 (de) | 2001-05-30 |
EP1104057A3 (de) | 2003-11-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJIFILM CORP., TOKIO/TOKYO, JP |
|
R082 | Change of representative |
Ref document number: 1104057 Country of ref document: EP Representative=s name: KLUNKER, SCHMITT-NILSON, HIRSCH, 80796 MUENCHEN, D |