DE60036729D1 - Heteroübergang-Bipolartransistor mit obenliegendem Kollektor und dessen Herstellungsverfahren - Google Patents

Heteroübergang-Bipolartransistor mit obenliegendem Kollektor und dessen Herstellungsverfahren

Info

Publication number
DE60036729D1
DE60036729D1 DE60036729T DE60036729T DE60036729D1 DE 60036729 D1 DE60036729 D1 DE 60036729D1 DE 60036729 T DE60036729 T DE 60036729T DE 60036729 T DE60036729 T DE 60036729T DE 60036729 D1 DE60036729 D1 DE 60036729D1
Authority
DE
Germany
Prior art keywords
manufacturing process
bipolar transistor
heterojunction bipolar
overhead collector
overhead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60036729T
Other languages
English (en)
Other versions
DE60036729T2 (de
Inventor
Sylvain Delage
Simone Cassette
Didier Floriot
Arnaud Girardot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Application granted granted Critical
Publication of DE60036729D1 publication Critical patent/DE60036729D1/de
Publication of DE60036729T2 publication Critical patent/DE60036729T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DE60036729T 1999-12-23 2000-12-15 Heteroübergang-Bipolartransistor mit obenliegendem Kollektor und dessen Herstellungsverfahren Expired - Lifetime DE60036729T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR9916400A FR2803102B1 (fr) 1999-12-23 1999-12-23 Transistor bipolaire a heterojonction a collecteur en haut et procede de realisation
FR9916400 1999-12-23
PCT/FR2000/003562 WO2001048829A1 (fr) 1999-12-23 2000-12-15 Transistor bipolaire a heterojonction a collecteur en haut et procede de realisation

Publications (2)

Publication Number Publication Date
DE60036729D1 true DE60036729D1 (de) 2007-11-22
DE60036729T2 DE60036729T2 (de) 2008-07-17

Family

ID=9553767

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60036729T Expired - Lifetime DE60036729T2 (de) 1999-12-23 2000-12-15 Heteroübergang-Bipolartransistor mit obenliegendem Kollektor und dessen Herstellungsverfahren

Country Status (6)

Country Link
US (1) US6858509B2 (de)
EP (1) EP1243029B1 (de)
JP (1) JP4999246B2 (de)
DE (1) DE60036729T2 (de)
FR (1) FR2803102B1 (de)
WO (1) WO2001048829A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6661037B2 (en) * 2001-07-20 2003-12-09 Microlink Devices, Inc. Low emitter resistance contacts to GaAs high speed HBT
JP2003282582A (ja) * 2002-03-26 2003-10-03 Hitachi Ltd 半導体装置の製造方法
JP2004172582A (ja) * 2002-10-30 2004-06-17 Sharp Corp ヘテロ接合バイポーラトランジスタ
JP3940699B2 (ja) * 2003-05-16 2007-07-04 株式会社東芝 電力用半導体素子
JP2005079417A (ja) * 2003-09-02 2005-03-24 Matsushita Electric Ind Co Ltd 半導体装置及びヘテロ接合バイポーラトランジスタ
US6972237B2 (en) * 2003-12-01 2005-12-06 Chartered Semiconductor Manufacturing Ltd. Lateral heterojunction bipolar transistor and method of manufacture using selective epitaxial growth
US7413958B2 (en) * 2003-12-04 2008-08-19 Bae Systems Information And Electronic Systems Integration Inc. GaN-based permeable base transistor and method of fabrication
JP2005259835A (ja) * 2004-03-10 2005-09-22 Matsushita Electric Ind Co Ltd 半導体素子及びその製造方法
US8421121B2 (en) * 2007-04-18 2013-04-16 Northrop Grumman Systems Corporation Antimonide-based compound semiconductor with titanium tungsten stack
JP5628681B2 (ja) 2008-10-21 2014-11-19 ルネサスエレクトロニクス株式会社 バイポーラトランジスタ
JP5628680B2 (ja) 2008-10-21 2014-11-19 ルネサスエレクトロニクス株式会社 バイポーラトランジスタ
WO2010083263A1 (en) * 2009-01-15 2010-07-22 Jie Yao Mesa heterojunction phototransistor and method for making same
US8796149B1 (en) 2013-02-18 2014-08-05 International Business Machines Corporation Collector-up bipolar junction transistors in BiCMOS technology
US10553633B2 (en) * 2014-05-30 2020-02-04 Klaus Y.J. Hsu Phototransistor with body-strapped base
JP2019102639A (ja) * 2017-12-01 2019-06-24 株式会社村田製作所 半導体装置
US11355617B2 (en) * 2019-10-01 2022-06-07 Qualcomm Incorporated Self-aligned collector heterojunction bipolar transistor (HBT)

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3751972T2 (de) * 1986-04-01 1997-05-22 Matsushita Electric Ind Co Ltd Bipolarer Transistor
DE3850309T2 (de) * 1987-07-24 1995-01-19 Matsushita Electric Ind Co Ltd Hochfrequenz-Bipolartransistor und dessen Herstellungsverfahren.
JP2522378B2 (ja) * 1989-01-20 1996-08-07 日本電気株式会社 バイポ―ラトランジスタ及びその製造方法
FR2667724B1 (fr) 1990-10-09 1992-11-27 Thomson Csf Procede de realisation des metallisations d'electrodes d'un transistor.
JP2770583B2 (ja) * 1991-02-22 1998-07-02 日本電気株式会社 コレクタトップ型ヘテロ接合バイポーラトランジスタの製造方法
JP2500867B2 (ja) * 1991-03-18 1996-05-29 松下電器産業株式会社 ヘテロ接合バイポ―ラトランジスタおよびその集積方法
EP0562272A3 (en) * 1992-03-23 1994-05-25 Texas Instruments Inc Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same
US5700701A (en) * 1992-10-30 1997-12-23 Texas Instruments Incorporated Method for reducing junction capacitance and increasing current gain in collector-up bipolar transistors
FR2697945B1 (fr) * 1992-11-06 1995-01-06 Thomson Csf Procédé de gravure d'une hétérostructure de matériaux du groupe III-V.
US5631173A (en) * 1993-07-12 1997-05-20 Texas Instruments Incorporated Method for forming collector up heterojunction bipolar transistor having insulative extrinsic emitter
JP3349267B2 (ja) * 1993-08-12 2002-11-20 富士通株式会社 ヘテロバイポーラ型半導体装置とその製造方法
JPH07122573A (ja) * 1993-10-28 1995-05-12 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合バイポーラトランジスタの製法
FR2727570B1 (fr) 1994-11-25 1997-01-24 Thomson Csf Amplificateur hyperfrequence monolithique haute integration, a topologie distribuee arborescente
FR2736468B1 (fr) 1995-07-07 1997-08-14 Thomson Csf Transistor bipolaire a structure optimisee
FR2737342B1 (fr) * 1995-07-25 1997-08-22 Thomson Csf Composant semiconducteur avec dissipateur thermique integre
JP3595080B2 (ja) * 1995-11-27 2004-12-02 三菱電機株式会社 バイポーラトランジスタ
JPH10242163A (ja) * 1997-02-28 1998-09-11 Hitachi Ltd 半導体装置
FR2764118B1 (fr) * 1997-05-30 2000-08-04 Thomson Csf Transistor bipolaire stabilise avec elements isolants electriques
JPH11330087A (ja) * 1998-05-14 1999-11-30 Nec Corp ヘテロ接合バイポーラトランジスタ及びその製造方法

Also Published As

Publication number Publication date
FR2803102A1 (fr) 2001-06-29
EP1243029B1 (de) 2007-10-10
FR2803102B1 (fr) 2002-03-22
DE60036729T2 (de) 2008-07-17
WO2001048829A1 (fr) 2001-07-05
JP2003518776A (ja) 2003-06-10
US6858509B2 (en) 2005-02-22
US20020190273A1 (en) 2002-12-19
EP1243029A1 (de) 2002-09-25
JP4999246B2 (ja) 2012-08-15

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: DELAGE, SYLVAIN, ARCUEIL CEDEX, FR

Inventor name: CASSETTE, SIMONE, ARCUEIL CEDEX, FR

Inventor name: FLORIOT, DIDIER, ARCUEIL CEDEX, FR

Inventor name: GIRARDOT, ARNAUD, ARCUEIL CEDEX, FR

8364 No opposition during term of opposition