DE60032671D1 - Heteroübergangsstruktur des Ladungstrennungs-Typs und deren Herstellungsverfahren - Google Patents

Heteroübergangsstruktur des Ladungstrennungs-Typs und deren Herstellungsverfahren

Info

Publication number
DE60032671D1
DE60032671D1 DE60032671T DE60032671T DE60032671D1 DE 60032671 D1 DE60032671 D1 DE 60032671D1 DE 60032671 T DE60032671 T DE 60032671T DE 60032671 T DE60032671 T DE 60032671T DE 60032671 D1 DE60032671 D1 DE 60032671D1
Authority
DE
Germany
Prior art keywords
production method
separation type
charge separation
heterojunction structure
heterojunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60032671T
Other languages
English (en)
Other versions
DE60032671T2 (de
Inventor
Matthias Ramm
Masafumi Ata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Research Institute of Innovative Technology for the Earth RITE
Original Assignee
Sony Corp
Research Institute of Innovative Technology for the Earth RITE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP17928999A external-priority patent/JP2001007366A/ja
Priority claimed from JP2000005116A external-priority patent/JP2001199715A/ja
Application filed by Sony Corp, Research Institute of Innovative Technology for the Earth RITE filed Critical Sony Corp
Publication of DE60032671D1 publication Critical patent/DE60032671D1/de
Application granted granted Critical
Publication of DE60032671T2 publication Critical patent/DE60032671T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J35/00—Catalysts, in general, characterised by their form or physical properties
    • B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J35/00—Catalysts, in general, characterised by their form or physical properties
    • B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
    • B01J35/39—Photocatalytic properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/152—Fullerenes
    • C01B32/156—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/125—Deposition of organic active material using liquid deposition, e.g. spin coating using electrolytic deposition e.g. in-situ electropolymerisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31909—Next to second addition polymer from unsaturated monomers
    • Y10T428/31924—Including polyene monomers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Composite Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Photovoltaic Devices (AREA)
DE2000632671 1999-06-25 2000-06-23 Heteroübergangsstruktur des Ladungstrennungs-Typs und deren Herstellungsverfahren Expired - Lifetime DE60032671T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP17928999 1999-06-25
JP17928999A JP2001007366A (ja) 1999-06-25 1999-06-25 電荷移動型ヘテロ接合構造体及びその製造方法
JP2000005116 2000-01-14
JP2000005116A JP2001199715A (ja) 2000-01-14 2000-01-14 フラーレン重合体及びその生成方法、並びに、フラーレン重合体を用いた機能素子及びその製造方法

Publications (2)

Publication Number Publication Date
DE60032671D1 true DE60032671D1 (de) 2007-02-15
DE60032671T2 DE60032671T2 (de) 2007-10-04

Family

ID=26499193

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2000632671 Expired - Lifetime DE60032671T2 (de) 1999-06-25 2000-06-23 Heteroübergangsstruktur des Ladungstrennungs-Typs und deren Herstellungsverfahren

Country Status (4)

Country Link
US (2) US7161182B2 (de)
EP (1) EP1063197B1 (de)
CA (1) CA2312140A1 (de)
DE (1) DE60032671T2 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI243859B (en) * 2002-01-07 2005-11-21 Univ Nat Chiao Tung Nano carbon materials and process for producing the same
US8907323B2 (en) * 2002-04-23 2014-12-09 Philip D. Freedman Microprocessor assembly
DE10258712B4 (de) * 2002-12-12 2005-03-17 Samsung SDI Co., Ltd., Suwon Bauelement für ein Aktiv-Matrix-OLED-Display mit integrierter Energieerzeugung
EP1447860A1 (de) * 2003-02-17 2004-08-18 Rijksuniversiteit Groningen Photodiode aus organischem Material
US20060099448A1 (en) * 2003-04-28 2006-05-11 Zheng-Hong Lu Top light-emitting devices with fullerene layer
EP1487030A3 (de) * 2003-06-11 2006-02-15 STMicroelectronics S.r.l. IR-emitter basierend auf SWNTs: halbleitende SWNT-lichtemittierende Dioden und Laser
US7329902B2 (en) 2003-06-11 2008-02-12 Stmicroelectronics S.R.L. IR-light emitters based on SWNT's (single walled carbon nanotubes), semiconducting SWNTs-light emitting diodes and lasers
DE10326546A1 (de) * 2003-06-12 2005-01-05 Siemens Ag Organische Solarzelle mit einer Zwischenschicht mit asymmetrischen Transporteigenschaften
US20070295395A1 (en) * 2004-03-26 2007-12-27 Luna Innovations Incorporated Photovoltaic Device With Trimetaspheres
KR100882503B1 (ko) * 2004-10-06 2009-02-06 한국과학기술연구원 염료감응 태양전지용 고효율 대향전극 및 그 제조방법
US7531209B2 (en) 2005-02-24 2009-05-12 Michael Raymond Ayers Porous films and bodies with enhanced mechanical strength
US7645933B2 (en) * 2005-03-02 2010-01-12 Wisconsin Alumni Research Foundation Carbon nanotube Schottky barrier photovoltaic cell
GB2424512A (en) * 2005-03-22 2006-09-27 Riso Nat Lab Method of forming photovoltaic device
WO2007143026A2 (en) 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Linked periodic networks of alternating carbon and inorganic clusters for use as low dielectric constant materials
WO2007143029A1 (en) 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Porous materials derived from polymer composites
WO2007143028A2 (en) 2006-05-31 2007-12-13 Roskilde Semiconductor Llc Low dielectric constant materials prepared from soluble fullerene clusters
US7875315B2 (en) 2006-05-31 2011-01-25 Roskilde Semiconductor Llc Porous inorganic solids for use as low dielectric constant materials
KR100900225B1 (ko) * 2006-10-31 2009-06-02 주식회사 하이닉스반도체 다마신 공정을 이용한 반도체 소자의 구리배선 형성방법
JP2010511720A (ja) * 2006-12-05 2010-04-15 ユニバーシティー オブ フロリダ リサーチ ファウンデイション インコーポレイテッド 官能化フラーレンの放射線誘導性の加熱または点火に基づくシステムおよび方法
US9315679B2 (en) * 2007-04-27 2016-04-19 Kuraray Co., Ltd. Transparent conductive film and method for producing transparent conductive film
JP5224604B2 (ja) * 2007-07-25 2013-07-03 綜研化学株式会社 色素増感太陽電池
JP2010041022A (ja) * 2008-07-08 2010-02-18 Sumitomo Chemical Co Ltd 光電変換素子
JP5444747B2 (ja) * 2009-02-17 2014-03-19 ソニー株式会社 カラー撮像素子およびその製造方法ならびに光センサーおよびその製造方法ならびに光電変換素子およびその製造方法ならびに電子機器
JP5114541B2 (ja) 2010-02-25 2013-01-09 富士フイルム株式会社 光センサの製造方法
WO2012061870A1 (en) * 2010-11-08 2012-05-18 Monash University Method and system for catalysis
KR101325213B1 (ko) 2011-11-23 2013-11-04 한국과학기술원 전자빔 조사를 이용한 ｐｃｂｍ의 전자밴드 구조의 조절방법
US8575842B2 (en) 2011-12-29 2013-11-05 Elwha Llc Field emission device
US8946992B2 (en) 2011-12-29 2015-02-03 Elwha Llc Anode with suppressor grid
US8692226B2 (en) 2011-12-29 2014-04-08 Elwha Llc Materials and configurations of a field emission device
US9018861B2 (en) 2011-12-29 2015-04-28 Elwha Llc Performance optimization of a field emission device
US9349562B2 (en) 2011-12-29 2016-05-24 Elwha Llc Field emission device with AC output
WO2013101944A2 (en) * 2011-12-29 2013-07-04 Elwha Llc Performance optimization of a field emission device
US8970113B2 (en) 2011-12-29 2015-03-03 Elwha Llc Time-varying field emission device
US9171690B2 (en) 2011-12-29 2015-10-27 Elwha Llc Variable field emission device
US8928228B2 (en) 2011-12-29 2015-01-06 Elwha Llc Embodiments of a field emission device
US8810161B2 (en) 2011-12-29 2014-08-19 Elwha Llc Addressable array of field emission devices
US8810131B2 (en) 2011-12-29 2014-08-19 Elwha Llc Field emission device with AC output
US9646798B2 (en) 2011-12-29 2017-05-09 Elwha Llc Electronic device graphene grid
US9659735B2 (en) 2012-09-12 2017-05-23 Elwha Llc Applications of graphene grids in vacuum electronics
US9659734B2 (en) 2012-09-12 2017-05-23 Elwha Llc Electronic device multi-layer graphene grid
CN103901247B (zh) * 2012-12-28 2016-08-31 清华大学 电势差测量方法
US20150091546A1 (en) * 2013-09-27 2015-04-02 Tel Solar Ag Power measurement analysis of photovoltaic modules
DE112019002761B4 (de) * 2018-05-31 2024-01-25 Sony Corporation Fotoelektrisches umwandlungselement und verfahren zum herstellen eines fotoelektrischen umwandlungselements

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3199430B2 (ja) * 1992-01-13 2001-08-20 財団法人川村理化学研究所 半導体素子
JPH05335614A (ja) * 1992-06-03 1993-12-17 Idemitsu Kosan Co Ltd 光電変換素子
US5331183A (en) * 1992-08-17 1994-07-19 The Regents Of The University Of California Conjugated polymer - acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells
JPH0693258A (ja) * 1992-09-14 1994-04-05 Toshiba Corp 有機薄膜素子
DE4336512C2 (de) 1993-04-23 2002-12-12 Mitsubishi Electric Corp Verfahren zur Reaktionskontrolle und ein Apparat, wobei Kohlenstoff-Rußmoleküle und organometallische Komplexe in angeregtem Zustand verwendet werden
JPH07147409A (ja) * 1993-11-25 1995-06-06 Toshiba Corp 電界効果型素子
JP3544237B2 (ja) 1995-02-09 2004-07-21 独立行政法人 科学技術振興機構 巨大フラーレンの製造方法
JP2692644B2 (ja) 1995-04-26 1997-12-17 日本電気株式会社 フラーレン薄膜製造方法
US6455916B1 (en) * 1996-04-08 2002-09-24 Micron Technology, Inc. Integrated circuit devices containing isolated dielectric material
US6017630A (en) 1996-05-22 2000-01-25 Research Development Corporation Ultrafine particle and production method thereof, production method of ultrafine particle bonded body, and fullerene and production method thereof
JP3544267B2 (ja) 1996-05-22 2004-07-21 独立行政法人 科学技術振興機構 巨大フラーレンの製造方法
JP2878654B2 (ja) 1996-09-13 1999-04-05 理化学研究所 感光性樹脂組成物
JP3032833B2 (ja) 1997-09-22 2000-04-17 ザ ユニバーシティ オブ バーミンガム 電子線レジスト
JP3791161B2 (ja) 1997-11-28 2006-06-28 日本油脂株式会社 フラーレン（ｃ６０）の重合体、重合方法および薄膜の製造方法
US6113673A (en) 1998-09-16 2000-09-05 Materials And Electrochemical Research (Mer) Corporation Gas storage using fullerene based adsorbents

Also Published As

Publication number Publication date
EP1063197A3 (de) 2004-01-14
EP1063197B1 (de) 2007-01-03
US20030129436A1 (en) 2003-07-10
DE60032671T2 (de) 2007-10-04
US6998285B2 (en) 2006-02-14
CA2312140A1 (en) 2000-12-25
US7161182B2 (en) 2007-01-09
US20030207573A1 (en) 2003-11-06
EP1063197A2 (de) 2000-12-27

Similar Documents

Publication Publication Date Title
DE60032671D1 (de) Heteroübergangsstruktur des Ladungstrennungs-Typs und deren Herstellungsverfahren
DE1025587T1 (de) Halbleiter-flipchippackung und herstellungsverfahren dafür
DE60034611D1 (de) Vertikale Sicherung und deren Herstellungsverfahren
DE60043760D1 (de) Festelektolytkondensator und dessen Herstellungsverfahren
DE59812443D1 (de) Solarzelle und Herstellungsverfahren
DE69910536D1 (de) Kopfstütze und ihr herstellungsverfahren
ATE293644T1 (de) Polyolefin und die herstellung davon
IL161823A0 (en) Antibodies to cd40 and pharmaceutical compositionscontaining the same
DE60134371D1 (de) Spiralkontaktor und dessen Herstellungsmethode
ATE260343T1 (de) Bernsteinsäure herstellung und reinigung
DE69929456D1 (de) Nahfeldabtastkopf und herstellungsverfahren
DE60044012D1 (de) Festelektrolytkondensator und Herstellungsverfahren
DE69734183T8 (de) Sonnenzelle und Herstellungsverfahren
DE60121878D1 (de) Mikroaktor und dessen Herstellungsverfahren
DE60134016D1 (de) Wabenstruktur und wabenfilter und verfahren zu deren herstellung
DE60036835D1 (de) Kohlenstoffhaltige komplexe Struktur und deren Herstellungsverfahren
DE60031637D1 (de) Damaszene Verbindungsstruktur und ihr Herstellungsverfahren
DE60026034D1 (de) Zusammendrückbeständiges mikriporöses material und verfahren zu seiner herstellung
DE60032829D1 (de) Toner und Tonerherstellungsverfahren
DE60020737D1 (de) Sic-einkristall und herstellungsverfahren dafür
DE60036249D1 (de) Feldeffekttransistor und dessen Herstellungsverfahren
DE69806891T2 (de) Grobkörniger kaolinton und herstellungsverfahren
DE60033043D1 (de) Modifizierte pflanzenviren und deren verwendungsmethoden
HK1039340A1 (zh) 向cyclosporine及cyclosporine代謝產物的特別位置生產抗體的方法
DE69918100D1 (de) Propylenhomopolymere und herstellungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition