JP2010041022A - 光電変換素子 - Google Patents
光電変換素子 Download PDFInfo
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- JP2010041022A JP2010041022A JP2008299268A JP2008299268A JP2010041022A JP 2010041022 A JP2010041022 A JP 2010041022A JP 2008299268 A JP2008299268 A JP 2008299268A JP 2008299268 A JP2008299268 A JP 2008299268A JP 2010041022 A JP2010041022 A JP 2010041022A
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- Prior art keywords
- photoelectric conversion
- type semiconductor
- active layer
- conversion element
- derivatives
- Prior art date
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- IGPFOKFDBICQMC-UHFFFAOYSA-N 3-phenylmethoxyaniline Chemical compound NC1=CC=CC(OCC=2C=CC=CC=2)=C1 IGPFOKFDBICQMC-UHFFFAOYSA-N 0.000 description 1
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- DDTHMESPCBONDT-UHFFFAOYSA-N 4-(4-oxocyclohexa-2,5-dien-1-ylidene)cyclohexa-2,5-dien-1-one Chemical class C1=CC(=O)C=CC1=C1C=CC(=O)C=C1 DDTHMESPCBONDT-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Chemical class 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229920000292 Polyquinoline Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021612 Silver iodide Inorganic materials 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- 239000006011 Zinc phosphide Substances 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- YGUXVEHFNLRTTD-UHFFFAOYSA-N bis(sulfanylidene)antimony Chemical class S=[Sb]=S YGUXVEHFNLRTTD-UHFFFAOYSA-N 0.000 description 1
- WVMYSOZCZHQCSG-UHFFFAOYSA-N bis(sulfanylidene)zirconium Chemical compound S=[Zr]=S WVMYSOZCZHQCSG-UHFFFAOYSA-N 0.000 description 1
- HITXEXPSQXNMAN-UHFFFAOYSA-N bis(tellanylidene)molybdenum Chemical compound [Te]=[Mo]=[Te] HITXEXPSQXNMAN-UHFFFAOYSA-N 0.000 description 1
- ODWXUNBKCRECNW-UHFFFAOYSA-M bromocopper(1+) Chemical compound Br[Cu+] ODWXUNBKCRECNW-UHFFFAOYSA-M 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- NNLOHLDVJGPUFR-UHFFFAOYSA-L calcium;3,4,5,6-tetrahydroxy-2-oxohexanoate Chemical compound [Ca+2].OCC(O)C(O)C(O)C(=O)C([O-])=O.OCC(O)C(O)C(O)C(=O)C([O-])=O NNLOHLDVJGPUFR-UHFFFAOYSA-L 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- HPQRSQFZILKRDH-UHFFFAOYSA-M chloro(trimethyl)plumbane Chemical compound C[Pb](C)(C)Cl HPQRSQFZILKRDH-UHFFFAOYSA-M 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 150000008376 fluorenones Chemical class 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- XKBGEWXEAPTVCK-UHFFFAOYSA-M methyltrioctylammonium chloride Chemical compound [Cl-].CCCCCCCC[N+](C)(CCCCCCCC)CCCCCCCC XKBGEWXEAPTVCK-UHFFFAOYSA-M 0.000 description 1
- MHWZQNGIEIYAQJ-UHFFFAOYSA-N molybdenum diselenide Chemical compound [Se]=[Mo]=[Se] MHWZQNGIEIYAQJ-UHFFFAOYSA-N 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 125000001792 phenanthrenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- HOKBIQDJCNTWST-UHFFFAOYSA-N phosphanylidenezinc;zinc Chemical compound [Zn].[Zn]=P.[Zn]=P HOKBIQDJCNTWST-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical class C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- OMEPJWROJCQMMU-UHFFFAOYSA-N selanylidenebismuth;selenium Chemical compound [Se].[Bi]=[Se].[Bi]=[Se] OMEPJWROJCQMMU-UHFFFAOYSA-N 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- HQASLXJEKYYFNY-UHFFFAOYSA-N selenium(2-);titanium(4+) Chemical compound [Ti+4].[Se-2].[Se-2] HQASLXJEKYYFNY-UHFFFAOYSA-N 0.000 description 1
- HVEIXSLGUCQTMP-UHFFFAOYSA-N selenium(2-);zirconium(4+) Chemical compound [Se-2].[Se-2].[Zr+4] HVEIXSLGUCQTMP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 1
- 229940045105 silver iodide Drugs 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- WWGXHTXOZKVJDN-UHFFFAOYSA-M sodium;n,n-diethylcarbamodithioate;trihydrate Chemical compound O.O.O.[Na+].CCN(CC)C([S-])=S WWGXHTXOZKVJDN-UHFFFAOYSA-M 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 description 1
- RCYJPSGNXVLIBO-UHFFFAOYSA-N sulfanylidenetitanium Chemical compound [S].[Ti] RCYJPSGNXVLIBO-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- FAWYJKSBSAKOFP-UHFFFAOYSA-N tantalum(iv) sulfide Chemical compound S=[Ta]=S FAWYJKSBSAKOFP-UHFFFAOYSA-N 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- AFNRRBXCCXDRPS-UHFFFAOYSA-N tin(ii) sulfide Chemical compound [Sn]=S AFNRRBXCCXDRPS-UHFFFAOYSA-N 0.000 description 1
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229940048462 zinc phosphide Drugs 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
- H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
【解決手段】陽極と陰極と、該陽極と該陰極との間に活性層を有し、該活性層がn型半導体とp型半導体とを有し、該n型半導体と該p型半導体とのpn接合の面積が、活性層1μm3あたり100μm2以上である光電変換素子。pn接合の面積が、活性層1μm3あたり300μm2以下であることが好ましい。また、光電変換素子中の活性層がフラーレン誘導体と高分子化合物とを含むことが好ましい。
【選択図】なし
Description
(高分子化合物1の合成)
アルゴン置換した2L四つ口フラスコに化合物A(7.928g、16.72mmol)、化合物B(13.00g、17.60mmol)、メチルトリオクチルアンモニウムクロライド(商品名:aliquat336、Aldrich製、CH3N[(CH2)7CH3]3Cl、density 0.884g/ml,25℃、(登録商標))(4.979g)、及びトルエン405mlを入れ、撹拌しながら系内を30分間アルゴンバブリングした。ジクロロビス(トリフェニルホスフィン)パラジウム(II)(0.02g)を加え、105℃に昇温、撹拌しながら2mol/Lの炭酸ナトリウム水溶液42.2mlを滴下した。滴下終了後5時間反応させ、フェニルボロン酸(2.6g)とトルエン1.8mlを加えて105℃で16時間撹拌した。その後、トルエン700ml及び7.5%ジエチルジチオカルバミン酸ナトリウム三水和物水溶液200mlを加えて85℃で3時間撹拌した。その後、水層を除去し、有機層を60℃のイオン交換水300mlで2回、60℃の3%酢酸300mlで1回、さらに60℃のイオン交換水300mlで3回洗浄した。有機層をセライト、アルミナ、シリカを充填したカラムに通し、熱トルエン800mlでカラムを洗浄した。溶液を700mlまで濃縮した後、2Lのメタノールに注加、再沈殿させた。重合体をろ過して回収し、500mlのメタノール、アセトン、メタノールで洗浄した。50℃で一晩真空乾燥することにより、下記式:
で表されるペンタチエニル−フルオレンコポリマー(以下、「高分子化合物1」という) 12.21gを得た。高分子化合物1のポリスチレン換算の数平均分子量は5.4×104、重量平均分子量は1.1×105であった。
n型半導体であるフラーレン誘導体として15重量部の[6,6]−フェニルC61−酪酸メチルエステル(C60PCBM)(フロンティアカーボン社製E100)とp型半導体である電子供与体化合物として5重量部の高分子化合物1と溶媒として1000重量部のo−ジクロロベンゼンとを混合した。その後、孔径1.0μmのテフロン(登録商標)フィルターで濾過して組成物1を製造した。
フラーレン誘導体として5重量部の[6,6]−フェニルC61−酪酸メチルエステル(C60PCBM)(フロンティアカーボン社製E100)と電子供与体化合物として5重量部の高分子化合物1と溶媒として1000重量部のo−ジクロロベンゼンとを混合した。その後、孔径1.0μmのテフロン(登録商標)フィルターで濾過して組成物2を製造した。
フラーレン誘導体として15重量部の[6,6]−フェニルC61−酪酸メチルエステル(C60PCBM)(フロンティアカーボン社製E100)と電子供与体化合物として5重量部の高分子化合物1と溶媒として1000重量部のクロロベンゼンとを混合した。その後、孔径1.0μmのテフロン(登録商標)フィルターで濾過して組成物3を製造した。
フラーレン誘導体として15重量部の[6,6]−フェニルC61−酪酸メチルエステル(C60PCBM)(フロンティアカーボン社製E100)と電子供与体化合物として5重量部の高分子化合物1と溶媒として1000重量部のキシレンとを混合した。その後、孔径1.0μmのテフロン(登録商標)フィルターで濾過して組成物4を製造した。
フラーレン誘導体として15重量部のC70PCBM(Phenyl C71-butyric acid methyl ester、アメリカンダイソース社製、商品名ADS71BFA、ロット名07L022E)と電子供与体化合物として5重量部の高分子化合物1と溶媒として1000重量部のo−ジクロロベンゼンとを混合した。その後、シリカゲル(Wakogel C−300(粒径45〜75μm)、和光純薬社製)を溶液の重量に対して1重量%添加し、23℃で12時間攪拌した。攪拌終了後、1.0μmのテフロン(登録商標)フィルター用いて溶液中のシリカゲルを濾過し、組成物5を製造した。
(有機薄膜太陽電池の作製、評価)
スパッタ法により150nmの厚みでITO膜を付けたガラス基板をオゾンUV処理して表面処理を行った。次に、スピンコートにより組成物1を塗布し、有機薄膜太陽電池の活性層(膜厚約100nm)を得た。その後、真空蒸着機によりフッ化リチウムを膜厚4nmで蒸着し、次いでAlを膜厚100nmで蒸着した。蒸着のときの真空度は、すべて1〜9×10-3Paであった。また、得られた有機薄膜太陽電池の形状は、2mm×2mmの正四角形であった。得られた有機薄膜太陽電池にソーラシミュレーター(分光計器製、商品名OTENTO-SUNII:AM1.5Gフィルター、放射照度100mW/cm2) を用いて一定の光を照射し、発生する電流と電圧を測定して光電変換効率を求めた。測定結果を表1に示す。
(有機薄膜太陽電池の作製、評価)
組成物1にかえて組成物2を用いた以外は実施例1と同様の方法で有機薄膜太陽電池を作製し、光電変換効率を測定した。測定結果を表1に示す。
(有機薄膜太陽電池の作製、評価)
組成物1にかえて組成物3を用いた以外は実施例1と同様の方法で有機薄膜太陽電池を作製し、光電変換効率を測定した。測定結果を表1に示す。
(有機薄膜太陽電池の作製、評価)
組成物1にかえて組成物4を用いた以外は実施例1と同様の方法で有機薄膜太陽電池を作製し、光電変換効率を測定した。測定結果を表1に示す。
(有機薄膜太陽電池の作製、評価)
組成物1にかえて組成物5を用いた以外は実施例1と同様の方法で有機薄膜太陽電池を作製し、光電変換効率を測定した。測定結果を表1に示す。
(TEM2次元観察によるpn接合の面積の測定)
ガラス基板上に、スピンコートにより組成物1を塗布し、有機薄膜太陽電池の活性層(膜厚約100nm)に相当する層を得た。その後、真空下で1時間乾燥を行った。真空度は、1〜9×10-3Paであった。次に、TEM2次元観察により、該層中のp型半導体とn型半導体との境界の長さの測定を行った。TEMはJEM2200FS(日本電子製)を加速電圧200kVで用い、該層の上方から900nm×900nmの範囲の層を観察し、そのうち800nm×800nmの範囲の層を面積の測定に用いた。p型半導体部分とn型半導体成分の分離観察を、3ウィンドウ法による硫黄原子のマッピング像を得ることによって行った。得られた像をラトック社製の3次元構造解析ソフト3D・BONを用いて、明るい部分である高分子化合物を含む相を白に、暗い部分であるC60PCBMを含む相を黒とすることで2値化し、層中の1μm3あたりのpn接合の面積を求めた。測定結果を表1に示す。
(TEM2次元観察によるpn接合の面積の測定)
組成物1にかえて組成物2を用いた以外は評価例1と同様の方法で層中の1μm3あたりのpn接合の面積を測定した。測定結果を表1に示す。
(TEM2次元観察によるpn接合の面積の測定)
ガラス基板上に、スピンコートにより組成物3を塗布し、有機薄膜太陽電池の活性層(膜厚約100nm)に相当する層を得た。その後、真空下で1時間乾燥を行った。真空度は、1〜9×10-3Paであった。次に、TEM2次元観察により、該層中のp型半導体とn型半導体との境界の長さの測定を行った。TEMはJEM2200FS(日本電子製)を加速電圧200kVで用い、該層の上方から900nm×900nmの範囲の層を観察し、そのうち800nm×800nmの範囲の層を面積の測定に用いた。p型半導体部分とn型半導体成分の分離観察を、20eVエネルギーロス像を得ることによって行った。なお、20eVエネルギーロス像は、硫黄原子のマッピング像と同じコントラストが得られることを事前に確認した。得られた像をラトック社製の3次元構造解析ソフト3D・BONを用いて、明るい部分である高分子化合物を含む相を白に、暗い部分であるC60PCBMを含む相を黒とすることで2値化し、層中の1μm3あたりのpn接合の面積を求めた。測定結果を表1に示す。
(TEM2次元観察によるpn接合の面積の測定)
組成物1にかえて組成物4を用いた以外は評価例1と同様の方法で層中の1μm3あたりのpn接合の面積を測定した。測定結果を表1に示す。
(TEM2次元観察によるpn接合の面積の測定)
組成物3にかえて組成物5を用いた以外は評価例3と同様の方法で層中の1μm3あたりのpn接合の面積を測定した。測定結果を表1に示す。
Claims (4)
- 陽極と陰極と、該陽極と該陰極との間に活性層を有し、該活性層がn型半導体とp型半導体とを有し、該n型半導体と該p型半導体とのpn接合の面積が、活性層1μm3あたり100μm2以上である光電変換素子。
- pn接合の面積が、活性層1μm3あたり300μm2以下である請求項1に記載の光電変換素子。
- 活性層が高分子化合物を含む請求項1又は2に記載の光電変換素子。
- 活性層がフラーレン誘導体と高分子化合物とを含む請求項3に記載の光電変換素子。
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US9362515B2 (en) | 2016-06-07 |
US20110108884A1 (en) | 2011-05-12 |
WO2010005094A1 (ja) | 2010-01-14 |
EP2302713A1 (en) | 2011-03-30 |
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