JP7226910B2 - 高い光電変換効率と低い暗電流とが具現可能なイメージセンサ - Google Patents
高い光電変換効率と低い暗電流とが具現可能なイメージセンサ Download PDFInfo
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- JP7226910B2 JP7226910B2 JP2017183395A JP2017183395A JP7226910B2 JP 7226910 B2 JP7226910 B2 JP 7226910B2 JP 2017183395 A JP2017183395 A JP 2017183395A JP 2017183395 A JP2017183395 A JP 2017183395A JP 7226910 B2 JP7226910 B2 JP 7226910B2
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- 238000006243 chemical reaction Methods 0.000 title claims description 45
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 32
- 229910021389 graphene Inorganic materials 0.000 claims description 32
- 239000007769 metal material Substances 0.000 claims description 28
- 239000002096 quantum dot Substances 0.000 claims description 9
- 229910052723 transition metal Inorganic materials 0.000 claims description 9
- 150000003624 transition metals Chemical class 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
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- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052798 chalcogen Inorganic materials 0.000 claims description 5
- 150000001787 chalcogens Chemical class 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
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- 229910052702 rhenium Inorganic materials 0.000 claims description 5
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- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052713 technetium Inorganic materials 0.000 claims description 5
- 229910052714 tellurium Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 380
- 239000002019 doping agent Substances 0.000 description 32
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- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 3
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- 239000004020 conductor Substances 0.000 description 3
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- LYBDVVBIMGTZMB-HVIJGSDCSA-N [3-[hydroxy-[(2s,3r,5s,6s)-2,3,4,5,6-pentahydroxycyclohexyl]oxyphosphoryl]oxy-2-tetradecanoyloxypropyl] tetradecanoate Chemical compound CCCCCCCCCCCCCC(=O)OCC(OC(=O)CCCCCCCCCCCCC)COP(O)(=O)OC1[C@@H](O)[C@@H](O)C(O)[C@@H](O)[C@@H]1O LYBDVVBIMGTZMB-HVIJGSDCSA-N 0.000 description 2
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- 229950006238 nadide Drugs 0.000 description 2
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- 239000002253 acid Chemical class 0.000 description 1
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- CZKMPDNXOGQMFW-UHFFFAOYSA-N chloro(triethyl)germane Chemical compound CC[Ge](Cl)(CC)CC CZKMPDNXOGQMFW-UHFFFAOYSA-N 0.000 description 1
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- 238000003384 imaging method Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 208000013469 light sensitivity Diseases 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
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- 150000004706 metal oxides Chemical class 0.000 description 1
- BOPGDPNILDQYTO-NNYOXOHSSA-N nicotinamide-adenine dinucleotide Chemical compound C1=CCC(C(=O)N)=CN1[C@H]1[C@H](O)[C@H](O)[C@@H](COP(O)(=O)OP(O)(=O)OC[C@@H]2[C@H]([C@@H](O)[C@@H](O2)N2C3=NC=NC(N)=C3N=C2)O)O1 BOPGDPNILDQYTO-NNYOXOHSSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- QRUBYZBWAOOHSV-UHFFFAOYSA-M silver trifluoromethanesulfonate Chemical compound [Ag+].[O-]S(=O)(=O)C(F)(F)F QRUBYZBWAOOHSV-UHFFFAOYSA-M 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Description
互いに離隔されて設けられる第1電極及び第2電極と、
前記第1電極及び前記第2電極の間に設けられ、入射される光を電気的信号に変化させるものであり、半導体物質を含む複数の光検出層と、
複数の前記光検出層の間に設けられ、電気伝導異方性(anisotropy in electrical conductivity)を有する金属性(metallic)または半金属性(semi-metallic)の物質を含む中間層と、を含むイメージセンサが提供される。
基板と、
前記基板の上部に、前記基板と離隔されて設けられる第1電極と、
前記第1電極と前記基板との間に設けられ、入射される光を電気的信号に変化させるものであり、半導体物質を含む複数の光検出層と、
複数の前記光検出層の間に設けられ、電気伝導異方性を有する金属性または半金属性の物質を含む中間層と、を含むイメージセンサが提供される。
111,111’,211,311,411,511 第1電極
112,112’,212,412,512 第2電極
121,121’,221,321,421,521 第1光検出層
122,122’,222,322,422,522 第2光検出層
130,130’,231,232,233,234,330,430,530 中間層
223 第3光検出層
224 第4光検出層
310,410 導電性基板
315,415 絶縁層
510 絶縁性基板
610 青色イメージセンサ
620 緑色イメージセンサ
630 赤色イメージセンサ
Claims (25)
- 互いに離隔されて設けられる第1電極及び第2電極と、
前記第1電極及び前記第2電極の間に設けられ、入射される光を電気的信号に変化させるものであり、半導体物質を含む複数の光検出層と、
複数の前記光検出層間に設けられ、電気伝導異方性を有する金属性または半金属性の物質を含む中間層と、を含むイメージセンサ。 - 前記中間層は、前記中間層に垂直である方向への電気伝導度が、前記中間層に平行方向への電気伝導度より低いことを特徴とする請求項1に記載のイメージセンサ。
- 前記光検出層と前記中間層との間で入射される光によって、光電流が生じることを特徴とする請求項1又は2に記載のイメージセンサ。
- 前記中間層は、少なくとも1層を含むグラフェン、またはWTe2を含むことを特徴とする請求項1~3の何れか一項に記載のイメージセンサ。
- 前記中間層は、0.34nm~10cmの厚みを有することを特徴とする請求項1~4の何れか一項に記載のイメージセンサ。
- 前記中間層は、0.34nm~100μmの厚みを有することを特徴とする請求項5に記載のイメージセンサ。
- 前記光検出層は、Si、TMDC(transition metal dichalcogenides)、量子点及び有機半導体物質のうち少なくとも一つを含むことを特徴とする請求項1~6の何れか一項に記載のイメージセンサ。
- 前記TMDCは、Mo、W、Nb、V、Ta、Ti、Zr、Hf、Tc、Re、Cuのうち1つの遷移金属と、S、Se、Teのうち1つのカルコゲン元素と、を含むことを特徴とする請求項7に記載のイメージセンサ。
- 前記第1電極及び前記第2電極のうち少なくとも一方は、透明電極であることを特徴とする請求項1~8の何れか一項に記載のイメージセンサ。
- 前記透明電極は、透明な導電性酸化物またはグラフェンを含むことを特徴とする請求項9に記載のイメージセンサ。
- 前記光検出層及び前記中間層のうち少なくとも1層のフェルミレベルを制御することにより、光電変換効率及び暗電流を調節することを特徴とする請求項1~10の何れか一項に記載のイメージセンサ。
- 前記中間層の厚みと、前記光検出層及び前記中間層のうち少なくとも1層のドーピング濃度と、を制御することにより、光電変換効率及び暗電流を調節することを特徴とする請求項1~11の何れか一項に記載のイメージセンサ。
- 基板と、
前記基板の上部に、前記基板と離隔されて設けられる第1電極と、
前記第1電極と前記基板との間に設けられ、入射される光を電気的信号に変化させるものであり、半導体物質を含む複数の光検出層と、
複数の前記光検出層間に設けられ、電気伝導異方性を有する金属性または半金属性の物
質を含む中間層と、を含むイメージセンサ。 - 前記基板は、導電性基板を含むことを特徴とする請求項13に記載のイメージセンサ。
- 前記導電性基板は、シリコン基板を含むことを特徴とする請求項14に記載のイメージセンサ。
- 前記基板と、その上に設けられた前記光検出層との間に設けられた絶縁層をさらに含むことを特徴とする請求項13~15の何れか一項に記載のイメージセンサ。
- 前記基板と、その上に設けられた前記光検出層とが、前記絶縁層に形成されたビアホールを介して互いに電気的に連結されることを特徴とする請求項16に記載のイメージセンサ。
- 前記絶縁層と、その上に設けられた前記光検出層との間に設けられた第2電極をさらに含むことを特徴とする請求項16に記載のイメージセンサ。
- 前記基板は、絶縁性基板を含むことを特徴とする請求項13~18の何れか一項に記載のイメージセンサ。
- 前記中間層は、前記中間層に垂直である方向への電気伝導度が、前記中間層に平行方向への電気伝導度より低いことを特徴とする請求項13~19の何れか一項に記載のイメージセンサ。
- 前記中間層は、少なくとも1層を含むグラフェン、またはWTe2を含むことを特徴とする請求項20に記載のイメージセンサ。
- 前記中間層は、0.34nm~10cmの厚みを有することを特徴とする請求項13~21の何れか一項に記載のイメージセンサ。
- 前記光検出層は、Si、TMDC(transition metal dichalcogenides)、量子点及び有機半導体物質のうち少なくとも一つを含むことを特徴とする請求項13~22の何れか一項に記載のイメージセンサ。
- 前記第1電極は、透明電極であることを特徴とする請求項13~23の何れか一項に記載のイメージセンサ。
- 前記透明電極は、透明な導電性酸化物またはグラフェンを含むことを特徴とする請求項24に記載のイメージセンサ。
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