DE60034611D1 - Vertikale Sicherung und deren Herstellungsverfahren - Google Patents
Vertikale Sicherung und deren HerstellungsverfahrenInfo
- Publication number
- DE60034611D1 DE60034611D1 DE60034611T DE60034611T DE60034611D1 DE 60034611 D1 DE60034611 D1 DE 60034611D1 DE 60034611 T DE60034611 T DE 60034611T DE 60034611 T DE60034611 T DE 60034611T DE 60034611 D1 DE60034611 D1 DE 60034611D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- vertical fuse
- fuse
- vertical
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Fuses (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/255,767 US6242789B1 (en) | 1999-02-23 | 1999-02-23 | Vertical fuse and method of fabrication |
US255767 | 1999-02-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60034611D1 true DE60034611D1 (de) | 2007-06-14 |
DE60034611T2 DE60034611T2 (de) | 2008-01-31 |
Family
ID=22969768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60034611T Expired - Fee Related DE60034611T2 (de) | 1999-02-23 | 2000-02-04 | Vertikale Sicherung und deren Herstellungsverfahren |
Country Status (7)
Country | Link |
---|---|
US (2) | US6242789B1 (de) |
EP (1) | EP1032039B1 (de) |
JP (1) | JP2000243213A (de) |
KR (1) | KR100374214B1 (de) |
CN (1) | CN1188912C (de) |
DE (1) | DE60034611T2 (de) |
TW (1) | TW448561B (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19926107C1 (de) * | 1999-06-08 | 2000-11-16 | Siemens Ag | Halbleiteranordnung mit einer Fuse und ihr Herstellungsverfahren |
KR100340906B1 (ko) * | 1999-08-23 | 2002-06-20 | 박종섭 | 반도체 장치의 퓨즈 구조 |
KR100359158B1 (ko) * | 1999-12-30 | 2002-10-31 | 주식회사 하이닉스반도체 | 반도체소자의 퓨즈 형성방법 |
DE10030444A1 (de) * | 2000-06-22 | 2002-01-10 | Infineon Technologies Ag | Verfahren zur Herstellung einer dielektrischen Antifuse-Struktur |
US6584029B2 (en) * | 2001-08-09 | 2003-06-24 | Hewlett-Packard Development Company, L.P. | One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells |
US6580144B2 (en) * | 2001-09-28 | 2003-06-17 | Hewlett-Packard Development Company, L.P. | One time programmable fuse/anti-fuse combination based memory cell |
US6611039B2 (en) * | 2001-09-28 | 2003-08-26 | Hewlett-Packard Development Company, L.P. | Vertically oriented nano-fuse and nano-resistor circuit elements |
US6927472B2 (en) * | 2001-11-14 | 2005-08-09 | International Business Machines Corporation | Fuse structure and method to form the same |
US6444503B1 (en) | 2002-02-07 | 2002-09-03 | Taiwan Semiconductor Manufacturing Company | Fabricating electrical metal fuses without additional masking |
US7535078B2 (en) * | 2002-02-14 | 2009-05-19 | Freescale Semiconductor, Inc. | Semiconductor device having a fuse and method of forming thereof |
US7067897B2 (en) * | 2002-02-19 | 2006-06-27 | Kabushiki Kaisha Toshiba | Semiconductor device |
KR100449029B1 (ko) * | 2002-04-04 | 2004-09-16 | 삼성전자주식회사 | 패드영역에 퓨즈박스를 구비한 반도체 장치 및 그의제조방법 |
US6828652B2 (en) | 2002-05-07 | 2004-12-07 | Infineon Technologies Ag | Fuse structure for semiconductor device |
JP2005109116A (ja) * | 2003-09-30 | 2005-04-21 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
KR100621773B1 (ko) * | 2005-02-07 | 2006-09-14 | 삼성전자주식회사 | 전기적 퓨즈 회로 및 레이아웃 방법 |
KR100735529B1 (ko) * | 2006-02-09 | 2007-07-04 | 삼성전자주식회사 | 반도체 메모리 소자 및 그 제조 방법 |
JP2007258371A (ja) * | 2006-03-22 | 2007-10-04 | Elpida Memory Inc | ヒューズ素子を有する半導体装置及びヒューズ素子の切断方法 |
US20070252238A1 (en) * | 2006-04-27 | 2007-11-01 | Charles Lin | Tungstein plug as fuse for IC device |
JP4861051B2 (ja) * | 2006-05-09 | 2012-01-25 | ルネサスエレクトロニクス株式会社 | 半導体装置および電気ヒューズの切断方法 |
JP4861060B2 (ja) * | 2006-06-01 | 2012-01-25 | ルネサスエレクトロニクス株式会社 | 半導体装置および電気ヒューズの切断方法 |
US7470929B2 (en) * | 2006-07-24 | 2008-12-30 | International Business Machines Corporation | Fuse/anti-fuse structure and methods of making and programming same |
DE102006043484B4 (de) * | 2006-09-15 | 2019-11-28 | Infineon Technologies Ag | Fuse-Struktur und Verfahren zum Herstellen derselben |
US7785934B2 (en) | 2007-02-28 | 2010-08-31 | International Business Machines Corporation | Electronic fuses in semiconductor integrated circuits |
JP5283975B2 (ja) * | 2007-06-07 | 2013-09-04 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置ならびにそのデータ書込方法およびデータ読出方法 |
US7671444B2 (en) * | 2007-06-25 | 2010-03-02 | International Business Machines Corporation | Empty vias for electromigration during electronic-fuse re-programming |
US8232190B2 (en) * | 2007-10-01 | 2012-07-31 | International Business Machines Corporation | Three dimensional vertical E-fuse structures and methods of manufacturing the same |
US10600902B2 (en) * | 2008-02-13 | 2020-03-24 | Vishay SIliconix, LLC | Self-repairing field effect transisitor |
US8609534B2 (en) | 2010-09-27 | 2013-12-17 | International Business Machines Corporation | Electrical fuse structure and method of fabricating same |
US8299567B2 (en) * | 2010-11-23 | 2012-10-30 | International Business Machines Corporation | Structure of metal e-fuse |
US8633707B2 (en) * | 2011-03-29 | 2014-01-21 | International Business Machines Corporation | Stacked via structure for metal fuse applications |
US8922328B2 (en) * | 2011-08-16 | 2014-12-30 | United Microelectronics Corp. | Electrical fuse structure |
US8962467B2 (en) | 2012-02-17 | 2015-02-24 | International Business Machines Corporation | Metal fuse structure for improved programming capability |
US8916461B2 (en) | 2012-09-20 | 2014-12-23 | International Business Machines Corporation | Electronic fuse vias in interconnect structures |
US8921167B2 (en) | 2013-01-02 | 2014-12-30 | International Business Machines Corporation | Modified via bottom for BEOL via efuse |
US9059170B2 (en) * | 2013-02-06 | 2015-06-16 | International Business Machines Corporation | Electronic fuse having a damaged region |
US8896090B2 (en) | 2013-02-22 | 2014-11-25 | International Business Machines Corporation | Electrical fuses and methods of making electrical fuses |
CN104103460B (zh) * | 2013-04-03 | 2016-04-27 | 功得电子工业股份有限公司 | 垂直绕线中空保险丝的制法 |
US9646929B2 (en) | 2013-06-13 | 2017-05-09 | GlobalFoundries, Inc. | Making an efuse |
US9666528B1 (en) | 2016-02-23 | 2017-05-30 | International Business Machines Corporation | BEOL vertical fuse formed over air gap |
US9728542B1 (en) * | 2016-05-25 | 2017-08-08 | International Business Machines Corporation | High density programmable e-fuse co-integrated with vertical FETs |
US10483201B1 (en) | 2018-10-26 | 2019-11-19 | Nanya Technology Corporation | Semiconductor structure and method for manufacturing the same |
CN111223839A (zh) * | 2020-01-17 | 2020-06-02 | 上海华力微电子有限公司 | 一种efuse熔丝的版图结构 |
US11239160B2 (en) | 2020-06-16 | 2022-02-01 | International Business Machines Corporation | E-fuse with dielectric zipping |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5833865A (ja) * | 1981-08-24 | 1983-02-28 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
JP2593471B2 (ja) * | 1987-03-11 | 1997-03-26 | 株式会社東芝 | 半導体装置 |
US5451811A (en) * | 1991-10-08 | 1995-09-19 | Aptix Corporation | Electrically programmable interconnect element for integrated circuits |
US5264725A (en) * | 1992-12-07 | 1993-11-23 | Micron Semiconductor, Inc. | Low-current polysilicon fuse |
KR100297222B1 (ko) * | 1997-01-14 | 2001-08-07 | 가네꼬 히사시 | 반도체장치및그제조방법 |
US6100118A (en) * | 1998-06-11 | 2000-08-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fabrication of metal fuse design for redundancy technology having a guard ring |
-
1999
- 1999-02-23 US US09/255,767 patent/US6242789B1/en not_active Expired - Fee Related
-
2000
- 2000-02-04 EP EP00102357A patent/EP1032039B1/de not_active Expired - Lifetime
- 2000-02-04 DE DE60034611T patent/DE60034611T2/de not_active Expired - Fee Related
- 2000-02-23 KR KR10-2000-0008763A patent/KR100374214B1/ko not_active IP Right Cessation
- 2000-02-23 JP JP2000046289A patent/JP2000243213A/ja not_active Withdrawn
- 2000-02-23 CN CNB001026348A patent/CN1188912C/zh not_active Expired - Fee Related
- 2000-02-24 US US09/512,648 patent/US6218279B1/en not_active Expired - Lifetime
- 2000-08-29 TW TW089102932A patent/TW448561B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2000243213A (ja) | 2000-09-08 |
DE60034611T2 (de) | 2008-01-31 |
KR20000058155A (ko) | 2000-09-25 |
CN1275807A (zh) | 2000-12-06 |
US6218279B1 (en) | 2001-04-17 |
KR100374214B1 (ko) | 2003-03-03 |
TW448561B (en) | 2001-08-01 |
EP1032039B1 (de) | 2007-05-02 |
EP1032039A3 (de) | 2000-12-20 |
CN1188912C (zh) | 2005-02-09 |
US6242789B1 (en) | 2001-06-05 |
EP1032039A2 (de) | 2000-08-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: QIMONDA AG, 81739 MUENCHEN, DE Owner name: INTERNATIONAL BUSINESS MACHINES CORP., ARMONK,, US |
|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |