DE60036520D1 - Herstellungsverfahren für ein einen feldeffekttransistor beinhaltendes halbleiterbauteil - Google Patents

Herstellungsverfahren für ein einen feldeffekttransistor beinhaltendes halbleiterbauteil

Info

Publication number
DE60036520D1
DE60036520D1 DE60036520T DE60036520T DE60036520D1 DE 60036520 D1 DE60036520 D1 DE 60036520D1 DE 60036520 T DE60036520 T DE 60036520T DE 60036520 T DE60036520 T DE 60036520T DE 60036520 D1 DE60036520 D1 DE 60036520D1
Authority
DE
Germany
Prior art keywords
manufacturing
field effect
effect transistor
semiconductor component
containing semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60036520T
Other languages
English (en)
Other versions
DE60036520T2 (de
Inventor
Der Meer Hendrik H Van
Klaas G Druijf
Adrianus C Heessels
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE60036520D1 publication Critical patent/DE60036520D1/de
Publication of DE60036520T2 publication Critical patent/DE60036520T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE60036520T 1999-04-28 2000-04-14 Herstellungsverfahren für ein einen feldeffekttransistor beinhaltendes halbleiterbauteil Expired - Lifetime DE60036520T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP99201329 1999-04-28
EP99201329 1999-04-28
PCT/EP2000/003410 WO2000067309A1 (en) 1999-04-28 2000-04-14 Method of manufacturing a semiconductor device comprising a field effect transistor

Publications (2)

Publication Number Publication Date
DE60036520D1 true DE60036520D1 (de) 2007-11-08
DE60036520T2 DE60036520T2 (de) 2008-06-26

Family

ID=8240159

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60036520T Expired - Lifetime DE60036520T2 (de) 1999-04-28 2000-04-14 Herstellungsverfahren für ein einen feldeffekttransistor beinhaltendes halbleiterbauteil

Country Status (7)

Country Link
US (1) US6177314B1 (de)
EP (1) EP1093667B1 (de)
JP (1) JP2002543614A (de)
KR (1) KR100618058B1 (de)
DE (1) DE60036520T2 (de)
TW (1) TW479364B (de)
WO (1) WO2000067309A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW449919B (en) * 1998-12-18 2001-08-11 Koninkl Philips Electronics Nv A method of manufacturing a semiconductor device
GB0022149D0 (en) * 2000-09-09 2000-10-25 Zetex Plc Implantation method
US6284610B1 (en) * 2000-09-21 2001-09-04 Chartered Semiconductor Manufacturing Ltd. Method to reduce compressive stress in the silicon substrate during silicidation
KR100866111B1 (ko) * 2002-06-28 2008-10-30 매그나칩 반도체 유한회사 다마신공정을 이용하여 게이트전극의 저항을 감소시키는반도체 소자의 제조방법
JP4841123B2 (ja) * 2004-07-28 2011-12-21 パナソニック株式会社 半導体記憶装置及びその製造方法
JP5076548B2 (ja) 2007-02-22 2012-11-21 富士通セミコンダクター株式会社 半導体装置とその製造方法
US7790534B2 (en) * 2007-06-15 2010-09-07 Sandisk 3D Llc Method to form low-defect polycrystalline semiconductor material for use in a transistor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4635344A (en) * 1984-08-20 1987-01-13 Texas Instruments Incorporated Method of low encroachment oxide isolation of a semiconductor device
JP2638411B2 (ja) * 1992-11-27 1997-08-06 日本電気株式会社 Ｍｏｓ型半導体装置の製造方法
KR950034830A (ko) * 1994-04-29 1995-12-28 빈센트 비. 인그라시아 전계 효과 트랜지스터 및 이 트랜지스터의 제조 방법
JP3173760B2 (ja) * 1994-11-11 2001-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH0982958A (ja) * 1995-09-19 1997-03-28 Matsushita Electric Ind Co Ltd Ｍｏｓ型半導体装置およびその製造方法
JPH09148542A (ja) * 1995-11-17 1997-06-06 Sharp Corp 半導体記憶装置及びその製造方法
JPH09172171A (ja) * 1995-12-20 1997-06-30 Nec Corp 半導体装置の製造方法
TW347567B (en) * 1996-03-22 1998-12-11 Philips Eloctronics N V Semiconductor device and method of manufacturing a semiconductor device
US5753557A (en) * 1996-10-07 1998-05-19 Vanguard International Semiconductor Company Bridge-free self aligned silicide process
JPH11135788A (ja) * 1997-10-27 1999-05-21 Ricoh Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
TW479364B (en) 2002-03-11
WO2000067309A1 (en) 2000-11-09
DE60036520T2 (de) 2008-06-26
EP1093667A1 (de) 2001-04-25
JP2002543614A (ja) 2002-12-17
KR20010071624A (ko) 2001-07-28
KR100618058B1 (ko) 2006-08-30
EP1093667B1 (de) 2007-09-26
US6177314B1 (en) 2001-01-23

Similar Documents

Publication Publication Date Title
DE69939895D1 (de) Herstellungsverfahren für ein halbleiterbauelement
DE69832324D1 (de) Herstellungsverfahren für einen Halbleiter
DE60042028D1 (de) Herstellungsverfahren für einen farbfilter
DE60325039D1 (de) Herstellungsverfahren für einen halbleiterwafer und wafer
DE60227481D1 (de) Herstellungsverfahren für komplementäre Transistoren
DE60143761D1 (de) Herstellungsverfahren für einen siliziumwafer
NO994814L (no) FremgangsmÕte for tilvirkning av en halvlederkomponent
DE60044221D1 (de) Lumineszierendes Halbleiterelement und Verfahren zu dessen Herstellung
DE60141055D1 (de) Push-Planung für Halbleiterfertigung
DE60045755D1 (de) Halbleiterbauelement und dessen Herstellungsverfahren
DE60134954D1 (de) Produktionanordnung für Halbleiter
DE60336429D1 (de) HERSTELLUNGSVERFAHREN FÜR Ta-SPUTTERTARGET
DE69834280D1 (de) Herstellungsverfahren für einen rückstrahlenden Gegenstand
DE60037707D1 (de) Herstellungsverfahren für dünnfilmtransistoren
DE60220736D1 (de) Herstellungsverfahren für gebondetes Substrat
DE60044969D1 (de) Herstellungsverfahren einer integrierten schaltung
DE69518684D1 (de) Herstellungsverfahren für ein Feldeffekt-Halbleiterbauelement
DE60037559D1 (de) Herstellungsverfahren für ein Halbleiter-Bauelement
DE60236944D1 (de) Herstellungsverfahren für einen anneal-wafer
DE60238952D1 (de) Halbleiteranordnungsherstellungsmethode
DE69826865D1 (de) Herstellungsverfahren für verkapselte halbleiteranordnungen
DE50312208D1 (de) Herstellungsverfahren für eine halbleiterstruktur
DE60036520D1 (de) Herstellungsverfahren für ein einen feldeffekttransistor beinhaltendes halbleiterbauteil
DE60037599D1 (de) Herstellungsverfahren für halbleiteranordnung mit reduzierter signalwegverzögerungszeit
DE60217977D1 (de) Halbleiterwafer und verfahren zu dessen herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition