DE60044969D1 - Herstellungsverfahren einer integrierten schaltung - Google Patents
Herstellungsverfahren einer integrierten schaltungInfo
- Publication number
- DE60044969D1 DE60044969D1 DE60044969T DE60044969T DE60044969D1 DE 60044969 D1 DE60044969 D1 DE 60044969D1 DE 60044969 T DE60044969 T DE 60044969T DE 60044969 T DE60044969 T DE 60044969T DE 60044969 D1 DE60044969 D1 DE 60044969D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- integrated circuit
- integrated
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/299,357 US6444588B1 (en) | 1999-04-26 | 1999-04-26 | Anti-reflective coatings and methods regarding same |
PCT/US2000/011149 WO2000065639A1 (en) | 1999-04-26 | 2000-04-25 | Anti-reflective coatings and methods regarding same |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60044969D1 true DE60044969D1 (de) | 2010-10-28 |
Family
ID=23154432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60044969T Expired - Lifetime DE60044969D1 (de) | 1999-04-26 | 2000-04-25 | Herstellungsverfahren einer integrierten schaltung |
Country Status (7)
Country | Link |
---|---|
US (1) | US6444588B1 (de) |
EP (1) | EP1177574B1 (de) |
JP (1) | JP4397126B2 (de) |
KR (1) | KR100612593B1 (de) |
AU (1) | AU4663800A (de) |
DE (1) | DE60044969D1 (de) |
WO (1) | WO2000065639A1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6121133A (en) | 1997-08-22 | 2000-09-19 | Micron Technology, Inc. | Isolation using an antireflective coating |
US6294459B1 (en) * | 1998-09-03 | 2001-09-25 | Micron Technology, Inc. | Anti-reflective coatings and methods for forming and using same |
US6255717B1 (en) * | 1998-11-25 | 2001-07-03 | Advanced Micro Devices, Inc. | Shallow trench isolation using antireflection layer |
US7061075B1 (en) | 1998-11-25 | 2006-06-13 | Advanced Micro Devices, Inc. | Shallow trench isolation using antireflection layer |
US6821883B1 (en) | 1998-11-25 | 2004-11-23 | Advanced Micro Devices, Inc. | Shallow trench isolation using antireflection layer |
US7125783B2 (en) * | 2001-04-18 | 2006-10-24 | Integrated Device Technology, Inc. | Dielectric anti-reflective coating surface treatment to prevent defect generation in associated wet clean |
US6743726B2 (en) * | 2002-07-11 | 2004-06-01 | Promos Technologies, Inc. | Method for etching a trench through an anti-reflective coating |
DE10301291B3 (de) * | 2003-01-15 | 2004-08-26 | Infineon Technologies Ag | Verfahren zum Einbringen von eine unterschiedliche Dimensionierung aufweisenden Strukturen in ein Substrat |
US20050044894A1 (en) * | 2003-08-29 | 2005-03-03 | Douglas Nelson | Deposition of silica coatings on a substrate |
CN1934233B (zh) * | 2003-10-28 | 2015-02-04 | 塞克姆公司 | 清洁溶液和蚀刻剂及其使用方法 |
US7507521B2 (en) * | 2004-08-09 | 2009-03-24 | Intel Corporation | Silicon based optically degraded arc for lithographic patterning |
US7687225B2 (en) * | 2004-09-29 | 2010-03-30 | Intel Corporation | Optical coatings |
KR20060039571A (ko) * | 2004-11-03 | 2006-05-09 | 동부일렉트로닉스 주식회사 | 금속 배선 형성 방법 |
US7651955B2 (en) * | 2005-06-21 | 2010-01-26 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7576361B2 (en) * | 2005-08-03 | 2009-08-18 | Aptina Imaging Corporation | Backside silicon wafer design reducing image artifacts from infrared radiation |
JP4640047B2 (ja) * | 2005-08-30 | 2011-03-02 | 沖電気工業株式会社 | エッチング方法、金属膜構造体の製造方法およびエッチング構造体 |
US7741225B2 (en) | 2007-05-07 | 2010-06-22 | Georgia Tech Research Corporation | Method for cleaning a solar cell surface opening made with a solar etch paste |
US20090286349A1 (en) * | 2008-05-13 | 2009-11-19 | Georgia Tech Research Corporation | Solar cell spin-on based process for simultaneous diffusion and passivation |
KR100950930B1 (ko) * | 2009-05-22 | 2010-04-01 | 동국대학교 산학협력단 | 태양전지 셀의 반사방지막 제조 장치 및 방법 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5690525A (en) | 1979-11-28 | 1981-07-22 | Fujitsu Ltd | Manufacture of semiconductor device |
US4451969A (en) * | 1983-01-10 | 1984-06-05 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
JPS6159820A (ja) | 1984-08-31 | 1986-03-27 | Fujitsu Ltd | 半導体装置の製造方法 |
US4764248A (en) | 1987-04-13 | 1988-08-16 | Cypress Semiconductor Corporation | Rapid thermal nitridized oxide locos process |
JPH0752673B2 (ja) | 1989-01-18 | 1995-06-05 | シャープ株式会社 | 薄膜el素子 |
US4921572A (en) * | 1989-05-04 | 1990-05-01 | Olin Corporation | Etchant solutions containing hydrogen fluoride and a polyammonium fluoride salt |
JPH03101147A (ja) | 1989-09-13 | 1991-04-25 | Toshiba Corp | 半導体装置の製造方法 |
DE3941797A1 (de) | 1989-12-19 | 1991-06-20 | Leybold Ag | Belag, bestehend aus einem optisch wirkenden schichtsystem, fuer substrate, wobei das schichtsystem insbesondere eine hohe antireflexwirkung aufweist, und verfahren zur herstellung des belags |
US5677111A (en) | 1991-12-20 | 1997-10-14 | Sony Corporation | Process for production of micropattern utilizing antireflection film |
US5472827A (en) | 1991-12-30 | 1995-12-05 | Sony Corporation | Method of forming a resist pattern using an anti-reflective layer |
US5270241A (en) | 1992-03-13 | 1993-12-14 | Micron Technology, Inc. | Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing |
DE4231312C2 (de) | 1992-09-18 | 1996-10-02 | Siemens Ag | Antireflexschicht und Verfahren zur lithografischen Strukturierung einer Schicht |
US5378659A (en) | 1993-07-06 | 1995-01-03 | Motorola Inc. | Method and structure for forming an integrated circuit pattern on a semiconductor substrate |
US5580815A (en) | 1993-08-12 | 1996-12-03 | Motorola Inc. | Process for forming field isolation and a structure over a semiconductor substrate |
JP3101147B2 (ja) | 1994-05-02 | 2000-10-23 | シャープ株式会社 | 複写機 |
US5441914A (en) | 1994-05-02 | 1995-08-15 | Motorola Inc. | Method of forming conductive interconnect structure |
US5374585A (en) | 1994-05-09 | 1994-12-20 | Motorola, Inc. | Process for forming field isolation |
US5418019A (en) | 1994-05-25 | 1995-05-23 | Georgia Tech Research Corporation | Method for low temperature plasma enhanced chemical vapor deposition (PECVD) of an oxide and nitride antireflection coating on silicon |
JPH0831811A (ja) | 1994-07-15 | 1996-02-02 | Sony Corp | 半導体装置の素子分離領域の形成方法 |
JPH0831812A (ja) | 1994-07-15 | 1996-02-02 | Sony Corp | 半導体装置の素子分離領域の形成方法 |
US5510271A (en) | 1994-09-09 | 1996-04-23 | Georgia Tech Research Corporation | Processes for producing low cost, high efficiency silicon solar cells |
US5710067A (en) | 1995-06-07 | 1998-01-20 | Advanced Micro Devices, Inc. | Silicon oxime film |
JPH09134914A (ja) | 1995-11-08 | 1997-05-20 | Oki Electric Ind Co Ltd | 素子分離領域の形成方法 |
US5716535A (en) * | 1996-03-05 | 1998-02-10 | Micron Technology, Inc. | Methods and etchants for etching oxides of silicon with low selectivity |
US6127262A (en) | 1996-06-28 | 2000-10-03 | Applied Materials, Inc. | Method and apparatus for depositing an etch stop layer |
US5994217A (en) | 1996-12-16 | 1999-11-30 | Chartered Semiconductor Manufacturing Ltd. | Post metallization stress relief annealing heat treatment for ARC TiN over aluminum layers |
US5796151A (en) | 1996-12-19 | 1998-08-18 | Texas Instruments Incorporated | Semiconductor stack having a dielectric sidewall for prevention of oxidation of tungsten in tungsten capped poly-silicon gate electrodes |
US5886391A (en) | 1997-04-18 | 1999-03-23 | Micron Technology, Inc. | Antireflective structure |
US6121133A (en) | 1997-08-22 | 2000-09-19 | Micron Technology, Inc. | Isolation using an antireflective coating |
US6117741A (en) * | 1998-01-09 | 2000-09-12 | Texas Instruments Incorporated | Method of forming a transistor having an improved sidewall gate structure |
US6274292B1 (en) | 1998-02-25 | 2001-08-14 | Micron Technology, Inc. | Semiconductor processing methods |
US6103456A (en) | 1998-07-22 | 2000-08-15 | Siemens Aktiengesellschaft | Prevention of photoresist poisoning from dielectric antireflective coating in semiconductor fabrication |
US6124178A (en) | 1999-08-26 | 2000-09-26 | Mosel Vitelic, Inc. | Method of manufacturing MOSFET devices |
-
1999
- 1999-04-26 US US09/299,357 patent/US6444588B1/en not_active Expired - Lifetime
-
2000
- 2000-04-25 AU AU46638/00A patent/AU4663800A/en not_active Abandoned
- 2000-04-25 EP EP00928389A patent/EP1177574B1/de not_active Expired - Lifetime
- 2000-04-25 WO PCT/US2000/011149 patent/WO2000065639A1/en active IP Right Grant
- 2000-04-25 KR KR1020017011534A patent/KR100612593B1/ko not_active IP Right Cessation
- 2000-04-25 DE DE60044969T patent/DE60044969D1/de not_active Expired - Lifetime
- 2000-04-25 JP JP2000614488A patent/JP4397126B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP4397126B2 (ja) | 2010-01-13 |
AU4663800A (en) | 2000-11-10 |
JP2002543586A (ja) | 2002-12-17 |
KR20010104377A (ko) | 2001-11-24 |
WO2000065639A1 (en) | 2000-11-02 |
EP1177574B1 (de) | 2010-09-15 |
KR100612593B1 (ko) | 2006-08-17 |
US6444588B1 (en) | 2002-09-03 |
EP1177574A1 (de) | 2002-02-06 |
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