DE60010797D1 - Strahlungsempfindliche Harzzusammensetzung und deren Verwendung in einem interlaminaren Isolierfilm - Google Patents
Strahlungsempfindliche Harzzusammensetzung und deren Verwendung in einem interlaminaren IsolierfilmInfo
- Publication number
- DE60010797D1 DE60010797D1 DE60010797T DE60010797T DE60010797D1 DE 60010797 D1 DE60010797 D1 DE 60010797D1 DE 60010797 T DE60010797 T DE 60010797T DE 60010797 T DE60010797 T DE 60010797T DE 60010797 D1 DE60010797 D1 DE 60010797D1
- Authority
- DE
- Germany
- Prior art keywords
- insulating film
- resin composition
- sensitive resin
- radiation sensitive
- interlaminar insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/22—Compounds containing nitrogen bound to another nitrogen atom
- C08K5/27—Compounds containing a nitrogen atom bound to two other nitrogen atoms, e.g. diazoamino-compounds
- C08K5/28—Azides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Medicinal Chemistry (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials For Photolithography (AREA)
- Magnetic Heads (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11157463A JP2000347397A (ja) | 1999-06-04 | 1999-06-04 | 感放射線性樹脂組成物およびその層間絶縁膜への使用 |
JP15746399 | 1999-06-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60010797D1 true DE60010797D1 (de) | 2004-06-24 |
DE60010797T2 DE60010797T2 (de) | 2005-06-02 |
Family
ID=15650226
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60010797T Expired - Lifetime DE60010797T2 (de) | 1999-06-04 | 2000-05-31 | Strahlungsempfindliche Harzzusammensetzung und deren Verwendung in einem interlaminaren Isolierfilm |
Country Status (6)
Country | Link |
---|---|
US (1) | US6399267B1 (de) |
EP (1) | EP1057859B1 (de) |
JP (1) | JP2000347397A (de) |
KR (1) | KR100663818B1 (de) |
DE (1) | DE60010797T2 (de) |
TW (1) | TW593488B (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AUPQ700100A0 (en) * | 2000-04-18 | 2000-05-11 | Orbital Engine Company (Australia) Proprietary Limited | Engine speed control for internal combustion engines |
TWI297104B (de) * | 2000-07-27 | 2008-05-21 | Jsr Corp | |
WO2002019034A1 (fr) * | 2000-08-29 | 2002-03-07 | Jsr Corporation | Composition possedant un indice de refraction sensiblement modifiable par rayonnement et procede pour former un motif d'indice de refraction |
CA2431358A1 (en) * | 2000-12-11 | 2002-06-20 | Jsr Corporation | Radiation sensitive refractive index changing composition and refractive index changing method |
CA2406219A1 (en) | 2001-02-19 | 2002-10-15 | Jsr Corporation | Radiation sensitive refractive index changing composition |
EP1375597A4 (de) * | 2001-03-13 | 2004-05-26 | Jsr Corp | Strahlungsempfindliche zusammensetzung mit veränderlichem brechungsindex sowie deren verwendung |
TW555822B (en) * | 2001-03-15 | 2003-10-01 | Jsr Corp | Light diffuse reflecting film-forming composition, manufacturing method thereof, light diffuse reflecting film and liquid crystal display element |
JP4524944B2 (ja) * | 2001-03-28 | 2010-08-18 | Jsr株式会社 | 感放射線性樹脂組成物、その層間絶縁膜およびマイクロレンズの形成への使用、ならびに層間絶縁膜およびマイクロレンズ |
JP4631081B2 (ja) * | 2001-07-16 | 2011-02-16 | ナガセケムテックス株式会社 | ポジ型感放射線性樹脂組成物 |
JP2003043682A (ja) | 2001-08-01 | 2003-02-13 | Jsr Corp | 感放射線性誘電率変化性組成物、誘電率変化法 |
KR100784672B1 (ko) * | 2001-08-20 | 2007-12-12 | 주식회사 동진쎄미켐 | 감광성 수지 조성물 |
KR100809544B1 (ko) * | 2001-10-24 | 2008-03-04 | 주식회사 동진쎄미켐 | 퀴논디아지드 술폰산 에스테르 화합물을 포함하는 감광성수지조성물 |
US7001705B2 (en) * | 2002-04-18 | 2006-02-21 | Nissan Chemical Industries, Ltd. | Positively photosensitive resin composition and method of pattern formation |
KR20040092550A (ko) * | 2003-04-24 | 2004-11-04 | 클라리언트 인터내셔널 리미티드 | 레지스트 조성물 및 레지스트 제거용 유기용제 |
JP4099114B2 (ja) * | 2003-06-26 | 2008-06-11 | Azエレクトロニックマテリアルズ株式会社 | 感光性樹脂組成物 |
JP4455499B2 (ja) * | 2003-07-16 | 2010-04-21 | Azエレクトロニックマテリアルズ株式会社 | 感光性樹脂組成物 |
KR100571721B1 (ko) * | 2004-02-10 | 2006-04-17 | 삼성전자주식회사 | 신너 조성물 및 이를 이용한 포토레지스트의 제거 방법 |
KR101057850B1 (ko) * | 2004-04-08 | 2011-08-19 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물, 층간 절연막, 마이크로 렌즈 및이들의 제조 방법 |
TWI386714B (zh) * | 2004-05-06 | 2013-02-21 | Dongjin Semichem Co Ltd | Tft-lcd用層間有機絕緣膜、tft-lcd用層間有機絕緣膜用丙烯酸系共聚合體樹脂及其製造方法 |
KR20050113351A (ko) * | 2004-05-27 | 2005-12-02 | 주식회사 동진쎄미켐 | 감광성 수지 조성물 |
KR101206780B1 (ko) * | 2005-03-03 | 2012-11-30 | 주식회사 동진쎄미켐 | 감광성 수지 조성물 |
US7799509B2 (en) * | 2005-06-04 | 2010-09-21 | Samsung Electronics Co., Ltd. | Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same |
KR101326595B1 (ko) * | 2005-06-04 | 2013-11-20 | 주식회사 동진쎄미켐 | 감광성 수지 조성물, 이를 이용한 박막 트랜지스터 기판의 제조방법 및 공통 전극 기판의 제조방법 |
JP4934353B2 (ja) * | 2005-06-10 | 2012-05-16 | ドンジン セミケム カンパニー リミテッド | ネガティブ感光性樹脂組成物 |
KR100696195B1 (ko) | 2005-09-13 | 2007-03-20 | 한국전자통신연구원 | 저온 경화형 고분자 게이트 절연막 및 이를 적용한 유기박막 트랜지스터 |
JP4654867B2 (ja) * | 2005-10-07 | 2011-03-23 | Jsr株式会社 | 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法 |
KR101330345B1 (ko) | 2006-04-25 | 2013-11-15 | 코오롱인더스트리 주식회사 | 절연막 형성용 조성물 |
KR100867948B1 (ko) * | 2006-12-13 | 2008-11-11 | 제일모직주식회사 | 유기 절연막 형성용 감광성 수지 조성물 및 이를 포함하는소자 |
CN102981365B (zh) * | 2007-09-28 | 2014-12-17 | 东京应化工业株式会社 | 共聚物、树脂组合物、显示板用隔片、平坦化膜、热固性保护膜、微型透镜、以及共聚物的制备方法 |
KR100922843B1 (ko) | 2007-12-13 | 2009-10-20 | 제일모직주식회사 | 절연막 형성용 감광성 수지 조성물 |
JP5343664B2 (ja) * | 2009-03-30 | 2013-11-13 | Jsr株式会社 | 感放射線性樹脂組成物、有機el表示素子用隔壁及び絶縁膜、並びにその形成方法 |
CN101955743B (zh) * | 2010-09-16 | 2012-08-22 | 明基材料有限公司 | 粘着剂的组成物及其制造方法 |
EP2850114B1 (de) * | 2012-05-18 | 2017-03-15 | Ricoh Company, Ltd. | Lichtpolymerisierbare zusammensetzung, lichtpolymerisierbare tintenstrahltinte und tintenpatrone |
KR20140015869A (ko) * | 2012-07-26 | 2014-02-07 | 삼성디스플레이 주식회사 | 포토 레지스트 조성물 및 이를 이용한 박막 트랜지스터 표시판 제조 방법 |
KR101747230B1 (ko) | 2013-02-21 | 2017-06-14 | 제일모직 주식회사 | 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법 |
WO2015029723A1 (ja) | 2013-08-30 | 2015-03-05 | Jsr株式会社 | 被接着物回収方法、被接着物回収装置、ガス発生膜および樹脂組成物 |
CN107383594B (zh) * | 2017-07-16 | 2019-07-26 | 常州大学 | 一种纳米无机粒子共混改性聚丙烯微孔膜的制备方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU3870478A (en) | 1977-08-09 | 1980-02-14 | Somar Mfg | High energy radiation cruable resist material |
JPS5614232A (en) * | 1979-07-16 | 1981-02-12 | Mitsubishi Rayon Co Ltd | Negative type resist resin |
JPS56122031A (en) | 1980-03-01 | 1981-09-25 | Japan Synthetic Rubber Co Ltd | Positive type photosensitive resin composition |
JPS57204032A (en) | 1981-06-10 | 1982-12-14 | Somar Corp | Photosensitive material |
US4377631A (en) | 1981-06-22 | 1983-03-22 | Philip A. Hunt Chemical Corporation | Positive novolak photoresist compositions |
JPS58203433A (ja) | 1982-05-21 | 1983-11-26 | Fuji Photo Film Co Ltd | 感光性組成物 |
US4550069A (en) | 1984-06-11 | 1985-10-29 | American Hoechst Corporation | Positive photoresist compositions with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate |
JPS61141441A (ja) | 1984-12-14 | 1986-06-28 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物 |
US4929536A (en) | 1985-08-12 | 1990-05-29 | Hoechst Celanese Corporation | Image reversal negative working O-napthoquinone diazide and cross-linking compound containing photoresist process with thermal curing |
GB8529958D0 (en) | 1985-12-05 | 1986-01-15 | Vickers Plc | Radiation sensitive devices |
JP2593305B2 (ja) | 1987-02-02 | 1997-03-26 | 日本ペイント株式会社 | ポジ型感光性樹脂組成物 |
DE3731439A1 (de) | 1987-09-18 | 1989-03-30 | Hoechst Ag | Strahlungsempfindliches gemisch und hieraus hergestelltes kopiermaterial |
JPH03155554A (ja) | 1989-11-14 | 1991-07-03 | Japan Synthetic Rubber Co Ltd | 放射線感応性樹脂組成物 |
JP2571136B2 (ja) | 1989-11-17 | 1997-01-16 | 日本ゼオン株式会社 | ポジ型レジスト組成物 |
JPH061377B2 (ja) | 1989-12-28 | 1994-01-05 | 日本ゼオン株式会社 | ポジ型レジスト組成物 |
US5362597A (en) | 1991-05-30 | 1994-11-08 | Japan Synthetic Rubber Co., Ltd. | Radiation-sensitive resin composition comprising an epoxy-containing alkali-soluble resin and a naphthoquinone diazide sulfonic acid ester |
JP3484808B2 (ja) * | 1995-03-24 | 2004-01-06 | Jsr株式会社 | 層間絶縁膜形成用感放射線性樹脂組成物並びに層間絶縁膜およびその製造方法 |
JP3389820B2 (ja) * | 1996-06-17 | 2003-03-24 | 東レ株式会社 | 水なし平版印刷版原版 |
JP3650985B2 (ja) | 1997-05-22 | 2005-05-25 | Jsr株式会社 | ネガ型感放射線性樹脂組成物およびパターン製造法 |
JPH1152560A (ja) * | 1997-08-06 | 1999-02-26 | Jsr Corp | 感放射線性樹脂組成物 |
-
1999
- 1999-06-04 JP JP11157463A patent/JP2000347397A/ja not_active Withdrawn
-
2000
- 2000-05-31 EP EP00111681A patent/EP1057859B1/de not_active Expired - Lifetime
- 2000-05-31 DE DE60010797T patent/DE60010797T2/de not_active Expired - Lifetime
- 2000-06-01 US US09/584,776 patent/US6399267B1/en not_active Expired - Lifetime
- 2000-06-03 TW TW089110893A patent/TW593488B/zh not_active IP Right Cessation
- 2000-06-03 KR KR1020000030565A patent/KR100663818B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2000347397A (ja) | 2000-12-15 |
KR20010007222A (ko) | 2001-01-26 |
EP1057859A3 (de) | 2000-12-20 |
EP1057859B1 (de) | 2004-05-19 |
US6399267B1 (en) | 2002-06-04 |
KR100663818B1 (ko) | 2007-01-03 |
DE60010797T2 (de) | 2005-06-02 |
TW593488B (en) | 2004-06-21 |
EP1057859A2 (de) | 2000-12-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |