DE69915928D1 - Diazodisulfonverbindung und strahlungsempfindliche Harzzusammensetzung - Google Patents

Diazodisulfonverbindung und strahlungsempfindliche Harzzusammensetzung

Info

Publication number
DE69915928D1
DE69915928D1 DE69915928T DE69915928T DE69915928D1 DE 69915928 D1 DE69915928 D1 DE 69915928D1 DE 69915928 T DE69915928 T DE 69915928T DE 69915928 T DE69915928 T DE 69915928T DE 69915928 D1 DE69915928 D1 DE 69915928D1
Authority
DE
Germany
Prior art keywords
resin composition
sensitive resin
radiation sensitive
diazodisulfone compound
diazodisulfone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69915928T
Other languages
English (en)
Other versions
DE69915928T2 (de
Inventor
Eiichi Kobayashi
Ken-Ichi Yokoyama
Yong Wang
Shin-Ichiro Iwanaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Application granted granted Critical
Publication of DE69915928D1 publication Critical patent/DE69915928D1/de
Publication of DE69915928T2 publication Critical patent/DE69915928T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
DE69915928T 1998-05-19 1999-05-18 Diazodisulfonverbindung und strahlungsempfindliche Harzzusammensetzung Expired - Lifetime DE69915928T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15394798 1998-05-19
JP15394798 1998-05-19

Publications (2)

Publication Number Publication Date
DE69915928D1 true DE69915928D1 (de) 2004-05-06
DE69915928T2 DE69915928T2 (de) 2005-04-14

Family

ID=15573563

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69915928T Expired - Lifetime DE69915928T2 (de) 1998-05-19 1999-05-18 Diazodisulfonverbindung und strahlungsempfindliche Harzzusammensetzung

Country Status (5)

Country Link
US (1) US6143460A (de)
EP (1) EP0959389B1 (de)
KR (1) KR100539648B1 (de)
DE (1) DE69915928T2 (de)
TW (1) TWI232855B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0928287B1 (de) * 1997-07-25 2003-10-01 Acep Inc. Ionische verbindungen mit delokalisierter anionischer ladung, ihrer verwendung als komponenten von ionenleitern oder von katalysatoren
TW502133B (en) * 1999-06-10 2002-09-11 Wako Pure Chem Ind Ltd Resist composition, agent and method for reducing substrate dependence thereof
US6338931B1 (en) * 1999-08-16 2002-01-15 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
IL139513A (en) * 1999-11-09 2004-12-15 Jsr Corp N -sulfonylaxamide and radiation-resistant resins that use these compounds
WO2001055789A2 (en) * 2000-01-25 2001-08-02 Infineon Technologies Ag Chemically amplified short wavelength resist
EP1122605A3 (de) * 2000-02-04 2001-09-19 JSR Corporation Strahlungsempfindliche Harzzusammensetzung
JP3437138B2 (ja) * 2000-03-14 2003-08-18 松下電器産業株式会社 パターン形成材料及びパターン形成方法
JP4838437B2 (ja) * 2000-06-16 2011-12-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
AU2001267839A1 (en) * 2000-08-30 2002-03-13 Wako Pure Chemical Industries, Ltd. Sulfonium salt compound
KR20020045566A (ko) * 2000-12-07 2002-06-19 카나가와 치히로 고분자 화합물의 제조 방법 및 이 고분자 화합물을 사용한레지스트 재료
US6838225B2 (en) 2001-01-18 2005-01-04 Jsr Corporation Radiation-sensitive resin composition
JP4255100B2 (ja) * 2001-04-06 2009-04-15 富士フイルム株式会社 ＡｒＦエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法
KR100508699B1 (ko) * 2001-08-09 2005-08-17 학교법인 한양학원 Ａｆｍ 리소그래피용 아조 화합물 레지스트
KR100587452B1 (ko) * 2001-09-28 2006-06-09 신에쓰 가가꾸 고교 가부시끼가이샤 신규 술포닐디아조메탄 화합물, 광산발생제 및 그것을이용한 레지스트 재료 및 패턴 형성 방법
KR20050094828A (ko) * 2002-12-26 2005-09-28 도오꾜오까고오교 가부시끼가이샤 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
JP4152810B2 (ja) * 2003-06-13 2008-09-17 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
DE102004021861A1 (de) 2004-05-04 2005-11-24 Biedermann Motech Gmbh Flexibler Platzhalter
JP2005326491A (ja) * 2004-05-12 2005-11-24 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
WO2006059569A1 (ja) * 2004-12-03 2006-06-08 Tokyo Ohka Kogyo Co., Ltd. ポジ型レジスト組成物およびレジストパターン形成方法
JP5183903B2 (ja) 2006-10-13 2013-04-17 信越化学工業株式会社 高分子化合物、レジスト材料及びこれを用いたパターン形成方法
JP6247858B2 (ja) * 2013-08-01 2017-12-13 富士フイルム株式会社 パターン形成方法、及びこれを用いた電子デバイスの製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3206245A1 (de) * 1982-02-20 1983-09-01 Alcoa Deutschland Gmbh Verpackungswerke, 6520 Worms Bausatz fuer einen kappenverschluss
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPH0225850A (ja) * 1988-07-15 1990-01-29 Hitachi Ltd 放射線感応性組成物およびそれを用いたパターン形成法
DE69125634T2 (de) * 1990-01-30 1998-01-02 Wako Pure Chem Ind Ltd Chemisch verstärktes Photolack-Material
DE4006190A1 (de) * 1990-02-28 1991-08-29 Hoechst Ag Negativ arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
TW394861B (en) * 1994-04-25 2000-06-21 Tokyo Ohka Kogyo Co Ltd Positive resist composition
US5558971A (en) * 1994-09-02 1996-09-24 Wako Pure Chemical Industries, Ltd. Resist material
JP2956824B2 (ja) * 1995-06-15 1999-10-04 東京応化工業株式会社 ポジ型レジスト膜形成用塗布液
JP3433017B2 (ja) * 1995-08-31 2003-08-04 株式会社東芝 感光性組成物
US5962180A (en) * 1996-03-01 1999-10-05 Jsr Corporation Radiation sensitive composition
US5945248A (en) * 1996-07-24 1999-08-31 Tokyo Ohka Kogyo Co., Ltd. Chemical-sensitization positive-working photoresist composition
US5908730A (en) * 1996-07-24 1999-06-01 Tokyo Ohka Kogyo Co., Ltd. Chemical-sensitization photoresist composition

Also Published As

Publication number Publication date
DE69915928T2 (de) 2005-04-14
KR19990088376A (ko) 1999-12-27
TWI232855B (en) 2005-05-21
EP0959389A1 (de) 1999-11-24
KR100539648B1 (ko) 2005-12-29
EP0959389B1 (de) 2004-03-31
US6143460A (en) 2000-11-07

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