DE60236710D1 - Strahlungsempfindliche Harzzusammensetzung - Google Patents

Strahlungsempfindliche Harzzusammensetzung

Info

Publication number
DE60236710D1
DE60236710D1 DE60236710T DE60236710T DE60236710D1 DE 60236710 D1 DE60236710 D1 DE 60236710D1 DE 60236710 T DE60236710 T DE 60236710T DE 60236710 T DE60236710 T DE 60236710T DE 60236710 D1 DE60236710 D1 DE 60236710D1
Authority
DE
Germany
Prior art keywords
resin composition
sensitive resin
radiation sensitive
radiation
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60236710T
Other languages
English (en)
Inventor
Tomoki Nagai
Jun Numata
Eiichi Kobayashi
Tsutomu Shimokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Application granted granted Critical
Publication of DE60236710D1 publication Critical patent/DE60236710D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y10S430/121—Nitrogen in heterocyclic ring

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
DE60236710T 2001-04-27 2002-04-25 Strahlungsempfindliche Harzzusammensetzung Expired - Lifetime DE60236710D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001133702 2001-04-27

Publications (1)

Publication Number Publication Date
DE60236710D1 true DE60236710D1 (de) 2010-07-29

Family

ID=18981511

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60236710T Expired - Lifetime DE60236710D1 (de) 2001-04-27 2002-04-25 Strahlungsempfindliche Harzzusammensetzung

Country Status (7)

Country Link
US (1) US6821705B2 (de)
EP (1) EP1253470B1 (de)
JP (1) JP3988517B2 (de)
KR (1) KR100828893B1 (de)
DE (1) DE60236710D1 (de)
SG (1) SG104317A1 (de)
TW (1) TWI258058B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4838437B2 (ja) * 2000-06-16 2011-12-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4438218B2 (ja) * 2000-11-16 2010-03-24 Ｊｓｒ株式会社 感放射線性樹脂組成物
TWI314943B (en) * 2002-08-29 2009-09-21 Radiation-sensitive resin composition
JP3850781B2 (ja) * 2002-09-30 2006-11-29 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、及び半導体装置の製造方法
JP3937996B2 (ja) * 2002-10-08 2007-06-27 Ｊｓｒ株式会社 感放射性樹脂組成物
CN1802603A (zh) 2003-07-17 2006-07-12 霍尼韦尔国际公司 用于高级微电子应用的平面化薄膜及其生产装置和方法
JP4140506B2 (ja) * 2003-10-28 2008-08-27 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP2005232388A (ja) * 2004-02-20 2005-09-02 Tokyo Ohka Kogyo Co Ltd 高分子化合物、該高分子化合物を含有するフォトレジスト組成物、およびレジストパターン形成方法
WO2005100412A1 (ja) * 2004-04-13 2005-10-27 Tokyo Ohka Kogyo Co., Ltd. 高分子化合物、該高分子化合物を含有するフォトレジスト組成物、およびレジストパターン形成方法
JP4544085B2 (ja) * 2004-09-28 2010-09-15 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物
JP4665810B2 (ja) * 2005-03-29 2011-04-06 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物
US7534548B2 (en) 2005-06-02 2009-05-19 Hynix Semiconductor Inc. Polymer for immersion lithography and photoresist composition
US20070196765A1 (en) 2006-02-22 2007-08-23 Jsr Corporation Radiation-sensitive positive resin composition for producing platings, transfer film, and process for producing platings
KR101231709B1 (ko) * 2007-10-11 2013-02-08 주식회사 엘지화학 콜레이트계 화합물 및 이를 포함하는 네가티브형 감광성수지 조성물
JP5290129B2 (ja) * 2008-12-25 2013-09-18 信越化学工業株式会社 化学増幅ポジ型レジスト組成物及びレジストパターン形成方法
JP5527236B2 (ja) 2011-01-31 2014-06-18 信越化学工業株式会社 ポジ型化学増幅レジスト材料、パターン形成方法及び酸分解性ケトエステル化合物
JP7041756B2 (ja) * 2018-09-28 2022-03-24 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US5310619A (en) * 1986-06-13 1994-05-10 Microsi, Inc. Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable
JPH03231592A (ja) 1990-02-06 1991-10-15 Canon Inc 投射型表示装置
JP2870998B2 (ja) 1990-06-21 1999-03-17 カシオ計算機株式会社 文字出力装置
JPH06123970A (ja) 1992-10-12 1994-05-06 Shin Etsu Chem Co Ltd ポジ型レジスト材料
JPH0784180A (ja) 1993-09-13 1995-03-31 Nikon Corp 水中用魚眼レンズ
JP3116751B2 (ja) * 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
JP3203995B2 (ja) * 1993-12-24 2001-09-04 ジェイエスアール株式会社 感放射線性樹脂組成物
JP3491388B2 (ja) 1995-06-07 2004-01-26 株式会社村田製作所 多層厚膜体印刷方法および多層厚膜体
JP3231592B2 (ja) 1995-10-04 2001-11-26 旭光学工業株式会社 光学部材検査装置
US5962180A (en) * 1996-03-01 1999-10-05 Jsr Corporation Radiation sensitive composition
US6120972A (en) * 1997-09-02 2000-09-19 Jsr Corporation Radiation-sensitive resin composition
US6143472A (en) * 1998-11-18 2000-11-07 Wako Pure Chemical Industries, Ltd. Resist composition and a method for formation of a pattern using the composition
JP2000089454A (ja) 1998-09-14 2000-03-31 Tokyo Ohka Kogyo Co Ltd ネガ型レジスト組成物
US6365321B1 (en) * 1999-04-13 2002-04-02 International Business Machines Corporation Blends of hydroxystyrene polymers for use in chemically amplified positive resist formulations
JP4337172B2 (ja) 1999-06-14 2009-09-30 住友金属工業株式会社 エッジ検出方法、エッジ検出装置、及び記録媒体
KR20010009339A (ko) 1999-07-09 2001-02-05 박찬구 카르복시산 유도체 및 그 제조방법
AU1603101A (en) * 1999-11-17 2001-05-30 E.I. Du Pont De Nemours And Company Nitrile/fluoroalcohol-containing photoresists and associated processes for microlithography

Also Published As

Publication number Publication date
KR100828893B1 (ko) 2008-05-09
US6821705B2 (en) 2004-11-23
SG104317A1 (en) 2004-06-21
TWI258058B (en) 2006-07-11
US20020192593A1 (en) 2002-12-19
JP2003015302A (ja) 2003-01-17
KR20020092177A (ko) 2002-12-11
EP1253470A2 (de) 2002-10-30
EP1253470B1 (de) 2010-06-16
JP3988517B2 (ja) 2007-10-10
EP1253470A3 (de) 2003-11-05

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