DE4322359C2 - Halbleiterspeichereinrichtung - Google Patents

Halbleiterspeichereinrichtung

Info

Publication number
DE4322359C2
DE4322359C2 DE4322359A DE4322359A DE4322359C2 DE 4322359 C2 DE4322359 C2 DE 4322359C2 DE 4322359 A DE4322359 A DE 4322359A DE 4322359 A DE4322359 A DE 4322359A DE 4322359 C2 DE4322359 C2 DE 4322359C2
Authority
DE
Germany
Prior art keywords
buffer
signal
data
write clock
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE4322359A
Other languages
German (de)
English (en)
Other versions
DE4322359A1 (de
Inventor
Jung Pill Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of DE4322359A1 publication Critical patent/DE4322359A1/de
Application granted granted Critical
Publication of DE4322359C2 publication Critical patent/DE4322359C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
DE4322359A 1992-07-04 1993-07-05 Halbleiterspeichereinrichtung Expired - Fee Related DE4322359C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920011933A KR950010142B1 (ko) 1992-07-04 1992-07-04 라이트 인에이블 (we) 버퍼 보호 회로

Publications (2)

Publication Number Publication Date
DE4322359A1 DE4322359A1 (de) 1994-01-27
DE4322359C2 true DE4322359C2 (de) 1998-05-28

Family

ID=19335882

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4322359A Expired - Fee Related DE4322359C2 (de) 1992-07-04 1993-07-05 Halbleiterspeichereinrichtung

Country Status (3)

Country Link
JP (1) JPH06103772A (ja)
KR (1) KR950010142B1 (ja)
DE (1) DE4322359C2 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100481827B1 (ko) * 1997-05-12 2005-07-11 삼성전자주식회사 데이터입/출력버퍼회로를제어하기위한회로들을갖는반도체메모리장치
KR100480900B1 (ko) * 1998-01-13 2005-07-07 주식회사 하이닉스반도체 반도체메모리
US6628564B1 (en) 1998-06-29 2003-09-30 Fujitsu Limited Semiconductor memory device capable of driving non-selected word lines to first and second potentials

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3634760A1 (de) * 1985-10-31 1987-05-14 Mitsubishi Electric Corp Dynamische direktzugriffspeichervorrichtung
US5014245A (en) * 1989-07-20 1991-05-07 Kabushiki Kaisha Toshiba Dynamic random access memory and method for writing data thereto

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05182466A (ja) * 1991-12-27 1993-07-23 Mitsubishi Electric Corp 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3634760A1 (de) * 1985-10-31 1987-05-14 Mitsubishi Electric Corp Dynamische direktzugriffspeichervorrichtung
US5014245A (en) * 1989-07-20 1991-05-07 Kabushiki Kaisha Toshiba Dynamic random access memory and method for writing data thereto

Also Published As

Publication number Publication date
DE4322359A1 (de) 1994-01-27
JPH06103772A (ja) 1994-04-15
KR950010142B1 (ko) 1995-09-07
KR940002859A (ko) 1994-02-19

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee