DE69121433T2 - Halbleiterschaltung mit Korrekturschaltung für die Eingangsschaltschwelle - Google Patents

Halbleiterschaltung mit Korrekturschaltung für die Eingangsschaltschwelle

Info

Publication number
DE69121433T2
DE69121433T2 DE69121433T DE69121433T DE69121433T2 DE 69121433 T2 DE69121433 T2 DE 69121433T2 DE 69121433 T DE69121433 T DE 69121433T DE 69121433 T DE69121433 T DE 69121433T DE 69121433 T2 DE69121433 T2 DE 69121433T2
Authority
DE
Germany
Prior art keywords
circuit
switching threshold
input switching
correction circuit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69121433T
Other languages
English (en)
Other versions
DE69121433D1 (de
Inventor
Takako Sakagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69121433D1 publication Critical patent/DE69121433D1/de
Application granted granted Critical
Publication of DE69121433T2 publication Critical patent/DE69121433T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/00369Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
DE69121433T 1990-03-02 1991-02-28 Halbleiterschaltung mit Korrekturschaltung für die Eingangsschaltschwelle Expired - Fee Related DE69121433T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2050894A JPH03253114A (ja) 1990-03-02 1990-03-02 半導体装置

Publications (2)

Publication Number Publication Date
DE69121433D1 DE69121433D1 (de) 1996-09-26
DE69121433T2 true DE69121433T2 (de) 1997-03-27

Family

ID=12871445

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69121433T Expired - Fee Related DE69121433T2 (de) 1990-03-02 1991-02-28 Halbleiterschaltung mit Korrekturschaltung für die Eingangsschaltschwelle

Country Status (5)

Country Link
US (1) US5157287A (de)
EP (1) EP0444683B1 (de)
JP (1) JPH03253114A (de)
KR (1) KR930009150B1 (de)
DE (1) DE69121433T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6809989B2 (en) 2000-04-24 2004-10-26 Nec Electronics Corporation Semiconductor storage device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0554650A (ja) * 1991-08-26 1993-03-05 Nec Corp 半導体集積回路
EP0575687B1 (de) * 1992-06-26 1997-01-29 STMicroelectronics S.r.l. Einschalt-Rücksetzschaltung mit niedrigem Ruhestromverbrauch
US5406144A (en) * 1993-09-07 1995-04-11 Texas Instruments Incorporated Power reduction in a temperature compensating transistor circuit
JPH07221628A (ja) * 1994-02-08 1995-08-18 Toshiba Corp 入力回路
US5991887A (en) * 1996-02-28 1999-11-23 Dallas Semiconductor Corporation Low power wake up circuitry, with internal power down of the wake up circuitry itself
JP3859766B2 (ja) * 1996-05-24 2006-12-20 株式会社ルネサステクノロジ 半導体記憶装置の入力回路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710533A (en) * 1980-06-23 1982-01-20 Nec Corp Logical circuit
JPS615621A (ja) * 1984-06-20 1986-01-11 Nec Corp 入力回路
JPH0659024B2 (ja) * 1985-12-23 1994-08-03 日本電気株式会社 時定数回路
JPS62230220A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 相補性絶縁ゲ−ト型論理回路
JPH0821851B2 (ja) * 1986-07-18 1996-03-04 日本電気株式会社 インバータ回路
JP2741022B2 (ja) * 1987-04-01 1998-04-15 三菱電機株式会社 パワーオンリセツトパルス発生回路
JPH01286619A (ja) * 1988-05-13 1989-11-17 Nec Corp 入力回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6809989B2 (en) 2000-04-24 2004-10-26 Nec Electronics Corporation Semiconductor storage device

Also Published As

Publication number Publication date
DE69121433D1 (de) 1996-09-26
EP0444683A2 (de) 1991-09-04
EP0444683B1 (de) 1996-08-21
JPH03253114A (ja) 1991-11-12
KR910017758A (ko) 1991-11-05
US5157287A (en) 1992-10-20
EP0444683A3 (en) 1991-12-04
KR930009150B1 (ko) 1993-09-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee