DE69724848D1 - Integrierte Halbleiterschaltung mit verbesserter Eingangspfadverkabelung - Google Patents
Integrierte Halbleiterschaltung mit verbesserter EingangspfadverkabelungInfo
- Publication number
- DE69724848D1 DE69724848D1 DE69724848T DE69724848T DE69724848D1 DE 69724848 D1 DE69724848 D1 DE 69724848D1 DE 69724848 T DE69724848 T DE 69724848T DE 69724848 T DE69724848 T DE 69724848T DE 69724848 D1 DE69724848 D1 DE 69724848D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor circuit
- integrated semiconductor
- input path
- improved input
- path cabling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1565796 | 1996-01-31 | ||
| JP1565796 | 1996-01-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69724848D1 true DE69724848D1 (de) | 2003-10-23 |
| DE69724848T2 DE69724848T2 (de) | 2004-07-08 |
Family
ID=11894812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69724848T Expired - Fee Related DE69724848T2 (de) | 1996-01-31 | 1997-01-30 | Integrierte Halbleiterschaltung mit verbesserter Eingangspfadverkabelung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5724281A (de) |
| EP (1) | EP0788109B1 (de) |
| KR (1) | KR100244824B1 (de) |
| DE (1) | DE69724848T2 (de) |
| TW (1) | TW325566B (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0818787A3 (de) * | 1996-07-11 | 1999-08-25 | Texas Instruments Inc. | Verbesserungen betreffend Halbleiteranordnungen |
| JP3408479B2 (ja) * | 1999-12-17 | 2003-05-19 | 日本電気株式会社 | 半導体記憶装置 |
| JP2001283590A (ja) * | 2000-03-31 | 2001-10-12 | Fujitsu Ltd | 半導体集積回路 |
| JP2002176153A (ja) * | 2000-12-05 | 2002-06-21 | Fujitsu Ltd | 半導体記憶装置 |
| KR100852187B1 (ko) | 2007-01-25 | 2008-08-13 | 삼성전자주식회사 | 효과적인 시스템 인 패키지 구성을 위한 핀 구성 변경 회로 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5217917A (en) * | 1990-03-20 | 1993-06-08 | Hitachi, Ltd. | Semiconductor memory device with improved substrate arrangement to permit forming a plurality of different types of random access memory, and a testing method therefor |
| EP0476282A3 (en) * | 1990-07-31 | 1992-06-24 | Texas Instruments Incorporated | Improvements in or relating to integrated circuits |
| JPH04157695A (ja) * | 1990-10-19 | 1992-05-29 | Sanyo Electric Co Ltd | 半導体記憶装置 |
| JPH0582746A (ja) * | 1991-09-20 | 1993-04-02 | Fujitsu Ltd | 半導体記憶装置 |
| US5353250A (en) * | 1991-12-09 | 1994-10-04 | Texas Instruments Inc. | Pin programmable dram that provides customer option programmability |
| JP3218103B2 (ja) * | 1992-12-25 | 2001-10-15 | 三菱電機株式会社 | 半導体記憶装置 |
| US5471157A (en) * | 1994-03-31 | 1995-11-28 | Sgs-Thomson Microelectronics, Inc. | Integrated circuit with centralized control of edge transition detection pulse generation |
| JPH07312100A (ja) * | 1994-05-17 | 1995-11-28 | Seiko Instr Inc | 半導体メモリ集積回路 |
-
1997
- 1997-01-29 TW TW086100990A patent/TW325566B/zh not_active IP Right Cessation
- 1997-01-29 US US08/790,466 patent/US5724281A/en not_active Expired - Fee Related
- 1997-01-30 KR KR1019970002816A patent/KR100244824B1/ko not_active IP Right Cessation
- 1997-01-30 EP EP97101470A patent/EP0788109B1/de not_active Expired - Lifetime
- 1997-01-30 DE DE69724848T patent/DE69724848T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE69724848T2 (de) | 2004-07-08 |
| US5724281A (en) | 1998-03-03 |
| EP0788109B1 (de) | 2003-09-17 |
| EP0788109A2 (de) | 1997-08-06 |
| KR970060520A (ko) | 1997-08-12 |
| KR100244824B1 (ko) | 2000-02-15 |
| EP0788109A3 (de) | 1999-10-27 |
| TW325566B (en) | 1998-01-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |