DE4012681A1 - Integrierte schaltungsanordung - Google Patents
Integrierte schaltungsanordungInfo
- Publication number
- DE4012681A1 DE4012681A1 DE19904012681 DE4012681A DE4012681A1 DE 4012681 A1 DE4012681 A1 DE 4012681A1 DE 19904012681 DE19904012681 DE 19904012681 DE 4012681 A DE4012681 A DE 4012681A DE 4012681 A1 DE4012681 A1 DE 4012681A1
- Authority
- DE
- Germany
- Prior art keywords
- mos field
- type
- effect transistor
- semiconductor substrate
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 230000005669 field effect Effects 0.000 claims description 146
- 239000002019 doping agent Substances 0.000 claims description 39
- 238000009413 insulation Methods 0.000 claims description 19
- 238000012545 processing Methods 0.000 claims description 6
- 230000007547 defect Effects 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 43
- 239000007788 liquid Substances 0.000 abstract description 21
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 20
- 239000000463 material Substances 0.000 abstract description 19
- 239000012535 impurity Substances 0.000 abstract 1
- 108091006146 Channels Proteins 0.000 description 46
- 239000010410 layer Substances 0.000 description 43
- 230000006870 function Effects 0.000 description 21
- 238000000034 method Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 11
- 230000010354 integration Effects 0.000 description 10
- 229910052785 arsenic Inorganic materials 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 238000002955 isolation Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 4
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000008014 freezing Effects 0.000 description 2
- 238000007710 freezing Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
- H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10215689 | 1989-04-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE4012681A1 true DE4012681A1 (de) | 1990-10-25 |
Family
ID=14319867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19904012681 Withdrawn DE4012681A1 (de) | 1989-04-21 | 1990-04-20 | Integrierte schaltungsanordung |
Country Status (6)
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2243948B (en) * | 1990-04-20 | 1994-06-08 | Nobuo Mikoshiba | Integrated circuit |
| JPH1168105A (ja) | 1997-08-26 | 1999-03-09 | Mitsubishi Electric Corp | 半導体装置 |
| US7064050B2 (en) * | 2003-11-28 | 2006-06-20 | International Business Machines Corporation | Metal carbide gate structure and method of fabrication |
| US7667277B2 (en) * | 2005-01-13 | 2010-02-23 | International Business Machines Corporation | TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks |
| US8063450B2 (en) | 2006-09-19 | 2011-11-22 | Qunano Ab | Assembly of nanoscaled field effect transistors |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2012712B2 (de) * | 1970-03-17 | 1972-11-02 | Siemens AG, 1000 Berlin und 8000 München | Integrierte bistabile kippschaltung mit feldeffekttransistoren |
| JPS5214383A (en) * | 1975-07-24 | 1977-02-03 | Fujitsu Ltd | Mis-type semiconductor device |
| JPS56165358A (en) * | 1980-05-23 | 1981-12-18 | Nec Corp | Semiconductor device |
| JPS56165359A (en) * | 1980-05-23 | 1981-12-18 | Nec Corp | Semiconductor device |
| JPS57128967A (en) * | 1981-02-02 | 1982-08-10 | Nec Corp | Integrated semiconductor device |
| JPS5925273A (ja) * | 1982-08-03 | 1984-02-09 | Toshiba Corp | 半導体装置及びその製造方法 |
| JPS59168666A (ja) * | 1983-03-15 | 1984-09-22 | Toshiba Corp | 半導体装置 |
| DE3330851A1 (de) * | 1983-08-26 | 1985-03-14 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen |
| JPS60100474A (ja) * | 1983-11-04 | 1985-06-04 | Shindengen Electric Mfg Co Ltd | 半導体圧力センサ |
| JPS60100473A (ja) * | 1983-11-05 | 1985-06-04 | Mitsubishi Electric Corp | 電界効果トランジスタ |
| JPS61137317A (ja) * | 1984-12-10 | 1986-06-25 | Agency Of Ind Science & Technol | 半導体装置用電極材料 |
| JPS62219966A (ja) * | 1986-03-22 | 1987-09-28 | Toshiba Corp | 半導体装置 |
| JPS63113895A (ja) * | 1986-10-30 | 1988-05-18 | Nec Corp | Ｍｏｓ型半導体集積回路装置 |
-
1990
- 1990-04-10 CA CA 2014296 patent/CA2014296C/en not_active Expired - Fee Related
- 1990-04-17 GB GB9008525A patent/GB2231720B/en not_active Expired - Fee Related
- 1990-04-20 JP JP2105038A patent/JPH0348460A/ja active Pending
- 1990-04-20 DE DE19904012681 patent/DE4012681A1/de not_active Withdrawn
- 1990-04-20 FR FR9005083A patent/FR2646289A1/fr active Granted
- 1990-04-20 NL NL9000949A patent/NL9000949A/nl not_active Application Discontinuation
Non-Patent Citations (2)
| Title |
|---|
| BENEKING, H.: Feldeffekttransistoren, 1973, S. 196-199 * |
| Phys. of Semic.Dev.S.M.Sze, 1969, pp. 541-545 * |
Also Published As
| Publication number | Publication date |
|---|---|
| NL9000949A (nl) | 1990-11-16 |
| GB2231720B (en) | 1993-08-11 |
| CA2014296C (en) | 2000-08-01 |
| GB9008525D0 (en) | 1990-06-13 |
| FR2646289B1 (US07652168-20100126-C00068.png) | 1994-08-19 |
| CA2014296A1 (en) | 1990-10-21 |
| GB2231720A (en) | 1990-11-21 |
| JPH0348460A (ja) | 1991-03-01 |
| FR2646289A1 (fr) | 1990-10-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AG | Has addition no. |
Ref country code: DE Ref document number: 4033141 Format of ref document f/p: P |
|
| 8110 | Request for examination paragraph 44 | ||
| 8127 | New person/name/address of the applicant |
Owner name: CLARION CO., LTD., TOKIO/TOKYO, JP |
|
| 8181 | Inventor (new situation) |
Free format text: HERR, NOBUO MIKOSHIBA, SENDAI, MIYAGI, JP HERR, KAZUO TSUBOUCHI, SENDAI, MIYAGI, JP HERR, KAZUYA MASU, SENDAI, MIYAGI, JP |
|
| Q176 | Request that utility model be ruled invalid withdrawn |
Ref document number: 4033141 Country of ref document: DE |
|
| 8139 | Disposal/non-payment of the annual fee |