DE3933552A1 - Kompensierter kondensator fuer den eingang eines analog-/digitalwandlers mit geschaltetem kondensator - Google Patents

Kompensierter kondensator fuer den eingang eines analog-/digitalwandlers mit geschaltetem kondensator

Info

Publication number
DE3933552A1
DE3933552A1 DE3933552A DE3933552A DE3933552A1 DE 3933552 A1 DE3933552 A1 DE 3933552A1 DE 3933552 A DE3933552 A DE 3933552A DE 3933552 A DE3933552 A DE 3933552A DE 3933552 A1 DE3933552 A1 DE 3933552A1
Authority
DE
Germany
Prior art keywords
capacitor
lower electrode
electrodes
delta
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE3933552A
Other languages
German (de)
English (en)
Other versions
DE3933552C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Adrian Bruce Early
Iii Baker Perkins Lee Scott
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Crystal Semiconductor Corp
Original Assignee
Crystal Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crystal Semiconductor Corp filed Critical Crystal Semiconductor Corp
Publication of DE3933552A1 publication Critical patent/DE3933552A1/de
Application granted granted Critical
Publication of DE3933552C2 publication Critical patent/DE3933552C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M3/00—Conversion of analogue values to or from differential modulation
    • H03M3/30—Delta-sigma modulation
    • H03M3/322—Continuously compensating for, or preventing, undesired influence of physical parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M3/00—Conversion of analogue values to or from differential modulation
    • H03M3/30—Delta-sigma modulation
    • H03M3/458—Analogue/digital converters using delta-sigma modulation as an intermediate step
    • H03M3/494—Sampling or signal conditioning arrangements specially adapted for delta-sigma type analogue/digital conversion systems
    • H03M3/496—Details of sampling arrangements or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Analogue/Digital Conversion (AREA)
  • Compression, Expansion, Code Conversion, And Decoders (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Filters That Use Time-Delay Elements (AREA)
DE3933552A 1988-10-13 1989-10-07 Kompensierter kondensator fuer den eingang eines analog-/digitalwandlers mit geschaltetem kondensator Granted DE3933552A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/257,477 US4918454A (en) 1988-10-13 1988-10-13 Compensated capacitors for switched capacitor input of an analog-to-digital converter

Publications (2)

Publication Number Publication Date
DE3933552A1 true DE3933552A1 (de) 1990-04-19
DE3933552C2 DE3933552C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-07-29

Family

ID=22976459

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3933552A Granted DE3933552A1 (de) 1988-10-13 1989-10-07 Kompensierter kondensator fuer den eingang eines analog-/digitalwandlers mit geschaltetem kondensator

Country Status (4)

Country Link
US (1) US4918454A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH0756942B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3933552A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2223879B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4225113A1 (de) * 1992-07-30 1994-02-03 Erhardt & Leimer Gmbh Vorrichtung zur Überwachung einer laufenden Warenbahn
DE4302184A1 (de) * 1993-01-27 1994-07-28 Teves Gmbh Alfred Schaltung zur Verstärkung des Ausgangssignals eines Sensors
DE10207739A1 (de) * 2002-02-22 2003-09-11 Infineon Technologies Ag Integrierte Halbleiterschaltung mit einer Parallelschaltung gekoppelter Kapazitäten
DE10330490B4 (de) * 2002-07-19 2008-12-04 Samsung Electronics Co., Ltd., Suwon Integrierte MIM-Kondensatorstruktur
US7924029B2 (en) 2005-12-22 2011-04-12 Synaptics Incorporated Half-bridge for capacitive sensing
US8681474B2 (en) 2007-12-05 2014-03-25 Rohde & Schwartz Gmbh & Co. Kg Electrical circuit arrangement with concentrated elements in multi-layer substrates
US9240296B2 (en) 2012-08-06 2016-01-19 Synaptics Incorporated Keyboard construction having a sensing layer below a chassis layer

Families Citing this family (48)

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US5208597A (en) * 1988-10-13 1993-05-04 Crystal Semiconductor Compensated capacitors for switched capacitor input of an analog-to-digital converter
US4918454A (en) 1988-10-13 1990-04-17 Crystal Semiconductor Corporation Compensated capacitors for switched capacitor input of an analog-to-digital converter
EP0396787B1 (de) * 1989-05-08 1994-01-12 Siemens Aktiengesellschaft Integrierbarer Sigma-Delta-Modulator in Switched-Capacitor-Technik
US5012245A (en) * 1989-10-04 1991-04-30 At&T Bell Laboratories Integral switched capacitor FIR filter/digital-to-analog converter for sigma-delta encoded digital audio
US5245343A (en) * 1990-08-03 1993-09-14 Honeywell Inc. Enhanced accuracy delta-sigma A/D converter
US5589847A (en) * 1991-09-23 1996-12-31 Xerox Corporation Switched capacitor analog circuits using polysilicon thin film technology
US5305004A (en) * 1992-09-29 1994-04-19 Texas Instruments Incorporated Digital to analog converter for sigma delta modulator
US5376936A (en) * 1993-06-16 1994-12-27 Crystal Semiconductor Corporation One-bit switched-capacitor D/A circuit with continuous time linearity
GB2284317B (en) * 1993-11-11 1997-12-24 Motorola Inc A differential switched capacitor circuit
JPH07235616A (ja) * 1993-12-28 1995-09-05 Matsushita Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
KR0136994B1 (ko) * 1994-10-27 1998-04-24 김주용 반도체 소자의 캐패시터 구조 및 그 제조방법
US5598157A (en) * 1994-10-28 1997-01-28 Harris Corporation Sigma Delta analog to digital converter with three point calibration apparatus and method
US5646621A (en) * 1994-11-02 1997-07-08 Advanced Micro Devices, Inc. Delta-sigma ADC with multi-stage decimation filter and gain compensation filter
US5621675A (en) * 1994-11-02 1997-04-15 Advanced Micro Devices, Inc. Digital decimation and compensation filter system
US5638072A (en) * 1994-12-07 1997-06-10 Sipex Corporation Multiple channel analog to digital converter
US5648779A (en) * 1994-12-09 1997-07-15 Advanced Micro Devices, Inc. Sigma-delta modulator having reduced delay from input to output
US5751615A (en) * 1995-11-14 1998-05-12 Advanced Micro Devices, Inc. Implementation of a digital decimation filter and method
US5732004A (en) * 1995-11-14 1998-03-24 Advanced Micro Devices, Inc. DSP architecture for a FIR-type filter and method
JP3199004B2 (ja) * 1997-11-10 2001-08-13 日本電気株式会社 半導体装置およびその製造方法
US6194946B1 (en) 1998-05-07 2001-02-27 Burr-Brown Corporation Method and circuit for compensating the non-linearity of capacitors
AU5781700A (en) * 1999-07-01 2001-01-22 Texas Instruments Tucson Corporation Capacitor array
JP3795338B2 (ja) 2001-02-27 2006-07-12 旭化成マイクロシステム株式会社 全差動型サンプリング回路及びデルタシグマ型変調器
US20040207041A1 (en) * 2001-07-17 2004-10-21 De Maaijer Luc M.F. Capacitor arrangement and method for producing such a capacitor arrangement
US6515612B1 (en) * 2001-10-23 2003-02-04 Agere Systems, Inc. Method and system to reduce signal-dependent charge drawn from reference voltage in switched capacitor circuits
TW200403872A (en) * 2002-08-30 2004-03-01 Matsushita Electric Ind Co Ltd MIM capacitor
US6919233B2 (en) 2002-12-31 2005-07-19 Texas Instruments Incorporated MIM capacitors and methods for fabricating same
US7388247B1 (en) 2003-05-28 2008-06-17 The United States Of America As Represented By The Secretary Of The Navy High precision microelectromechanical capacitor with programmable voltage source
US20050263813A1 (en) * 2004-06-01 2005-12-01 Ching-Huei Tsai Capacitor on the semiconductor wafer
JP2006128468A (ja) * 2004-10-29 2006-05-18 Seiko Epson Corp 半導体装置
US8169014B2 (en) * 2006-01-09 2012-05-01 Taiwan Semiconductor Manufacturing Co., Ltd. Interdigitated capacitive structure for an integrated circuit
JP2007294848A (ja) * 2006-03-30 2007-11-08 Eudyna Devices Inc キャパシタおよび電子回路
US20070267733A1 (en) * 2006-05-18 2007-11-22 International Business Machines Corporation Symmetrical MIMCAP capacitor design
WO2011036428A1 (en) 2009-09-23 2011-03-31 X-Fab Semiconductor Foundries Ag Ultra-low voltage coefficient capacitors
US8143941B2 (en) * 2009-11-12 2012-03-27 Qualcomm, Incorporated Active analog filter having a MOS capacitor device with improved linearity
DE102010001377A1 (de) * 2010-01-29 2011-08-04 E.G.O. Elektro-Gerätebau GmbH, 75038 Schaltungsanordnung zum Bestimmen einer Kapazität einer Anzahl von kapazitiven Sensorelementen
JP5517898B2 (ja) * 2010-11-26 2014-06-11 株式会社日立製作所 アナログデジタル変換器
JP5871691B2 (ja) * 2012-03-29 2016-03-01 キヤノン株式会社 増幅回路、光電変換装置、および撮像システム
US9086709B2 (en) 2013-05-28 2015-07-21 Newlans, Inc. Apparatus and methods for variable capacitor arrays
US9570222B2 (en) * 2013-05-28 2017-02-14 Tdk Corporation Vector inductor having multiple mutually coupled metalization layers providing high quality factor
US9716188B2 (en) * 2013-08-30 2017-07-25 Qualcomm Incorporated Metal oxide semiconductor (MOS) capacitor with improved linearity
JP2015142156A (ja) * 2014-01-27 2015-08-03 新日本無線株式会社 Δσａｄｃ回路
US10382002B2 (en) 2015-03-27 2019-08-13 Tdk Corporation Apparatus and methods for tunable phase networks
US10073482B2 (en) 2015-03-30 2018-09-11 Tdk Corporation Apparatus and methods for MOS capacitor structures for variable capacitor arrays
US10042376B2 (en) 2015-03-30 2018-08-07 Tdk Corporation MOS capacitors for variable capacitor arrays and methods of forming the same
US9973155B2 (en) 2015-07-09 2018-05-15 Tdk Corporation Apparatus and methods for tunable power amplifiers
US10439627B2 (en) * 2017-12-18 2019-10-08 Qualcomm Incorporated Alias rejection through charge sharing
US20220416011A1 (en) * 2021-06-23 2022-12-29 Mediatek Singapore Pte. Ltd. Capacitor structure
US12381541B2 (en) 2023-05-22 2025-08-05 Analog Devices International Unlimited Company Managing capacitor voltage dependence

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Publication number Priority date Publication date Assignee Title
GB2138207A (en) * 1983-04-15 1984-10-17 Hitachi Ltd A semiconductor memory device and a method of manufacture thereof
EP0145606A2 (en) * 1983-12-13 1985-06-19 Fujitsu Limited Semiconductor memory device
EP0159824A2 (en) * 1984-03-30 1985-10-30 Kabushiki Kaisha Toshiba Semiconductor device with recessed capacitor
EP0190694A2 (en) * 1985-02-04 1986-08-13 Nippon Telegraph And Telephone Corporation Oversampling converter
US4626881A (en) * 1983-10-17 1986-12-02 Sanyo Electric Co., Ltd. Capacitor produced of a layer combination of metal, insulator and semiconductor
US4706066A (en) * 1985-07-02 1987-11-10 U.S. Philips Corporation Switch capacitor D/A converter having a distortion reducing capacitor
EP0263287A2 (en) * 1986-09-29 1988-04-13 International Business Machines Corporation Forming a capacitor in an integrated circuit

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DE2602315C3 (de) * 1976-01-22 1981-10-01 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung und Betriebsverfahren zur Umwandlung eines Analog-Signals in ein Digitalsignal
US4194187A (en) * 1978-08-07 1980-03-18 The United States Of America As Represented By The Secretary Of The Army Analog-to-digital conversion by charge coupled device
FR2533382B1 (fr) * 1982-09-21 1988-01-22 Senn Patrice Codeur de type delta-sigma, a double integration et applications de ce codeur a une voie de transmission de type mic et a la mesure de tensions continues
JPS6033739A (ja) * 1983-08-04 1985-02-21 Nec Corp デルタ・シグマ変調器
JPH0665225B2 (ja) * 1984-01-13 1994-08-22 株式会社東芝 半導体記憶装置の製造方法
KR900000170B1 (ko) * 1984-06-05 1990-01-23 가부시끼가이샤 도오시바 다이내믹형 메모리셀과 그 제조방법
FR2566538B1 (fr) * 1984-06-26 1986-11-14 Thomson Csf Comparateur analogique a transfert de charge et dispositifs utilisant un tel comparateur
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JPS61224350A (ja) * 1985-03-29 1986-10-06 Toshiba Corp 半導体記憶装置
JPH0682783B2 (ja) * 1985-03-29 1994-10-19 三菱電機株式会社 容量およびその製造方法
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US4746899A (en) * 1986-10-07 1988-05-24 Crystal Semiconductor Corporation Method for reducing effects of electrical noise in an analog-to-digital converter
US4731696A (en) * 1987-05-26 1988-03-15 National Semiconductor Corporation Three plate integrated circuit capacitor
EP0324036A1 (en) * 1988-01-09 1989-07-19 Signal Processing Technologies, Inc. Capacitance stabilization for A/D and D/A converters
JPH01204528A (ja) * 1988-02-10 1989-08-17 Fujitsu Ltd Ａ／ｄ変換器
US4918454A (en) 1988-10-13 1990-04-17 Crystal Semiconductor Corporation Compensated capacitors for switched capacitor input of an analog-to-digital converter

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GB2138207A (en) * 1983-04-15 1984-10-17 Hitachi Ltd A semiconductor memory device and a method of manufacture thereof
US4626881A (en) * 1983-10-17 1986-12-02 Sanyo Electric Co., Ltd. Capacitor produced of a layer combination of metal, insulator and semiconductor
EP0145606A2 (en) * 1983-12-13 1985-06-19 Fujitsu Limited Semiconductor memory device
EP0159824A2 (en) * 1984-03-30 1985-10-30 Kabushiki Kaisha Toshiba Semiconductor device with recessed capacitor
EP0190694A2 (en) * 1985-02-04 1986-08-13 Nippon Telegraph And Telephone Corporation Oversampling converter
US4706066A (en) * 1985-07-02 1987-11-10 U.S. Philips Corporation Switch capacitor D/A converter having a distortion reducing capacitor
EP0263287A2 (en) * 1986-09-29 1988-04-13 International Business Machines Corporation Forming a capacitor in an integrated circuit

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4225113A1 (de) * 1992-07-30 1994-02-03 Erhardt & Leimer Gmbh Vorrichtung zur Überwachung einer laufenden Warenbahn
DE4302184A1 (de) * 1993-01-27 1994-07-28 Teves Gmbh Alfred Schaltung zur Verstärkung des Ausgangssignals eines Sensors
DE10207739A1 (de) * 2002-02-22 2003-09-11 Infineon Technologies Ag Integrierte Halbleiterschaltung mit einer Parallelschaltung gekoppelter Kapazitäten
DE10330490B4 (de) * 2002-07-19 2008-12-04 Samsung Electronics Co., Ltd., Suwon Integrierte MIM-Kondensatorstruktur
US7924029B2 (en) 2005-12-22 2011-04-12 Synaptics Incorporated Half-bridge for capacitive sensing
US8681474B2 (en) 2007-12-05 2014-03-25 Rohde & Schwartz Gmbh & Co. Kg Electrical circuit arrangement with concentrated elements in multi-layer substrates
US8860531B2 (en) 2007-12-05 2014-10-14 Rohde & Schwarz Gmbh & Co. Kg Filter having electrical circuit arrangement with concentrated elements in multi-layer substrates
US9240296B2 (en) 2012-08-06 2016-01-19 Synaptics Incorporated Keyboard construction having a sensing layer below a chassis layer

Also Published As

Publication number Publication date
GB8922827D0 (en) 1989-11-22
JPH02210859A (ja) 1990-08-22
GB2223879A (en) 1990-04-18
JPH0756942B2 (ja) 1995-06-14
US4918454A (en) 1990-04-17
GB2223879B (en) 1993-03-17
US4918454B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1994-02-22
DE3933552C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-07-29

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