DE3889754D1 - Halbleiterlaservorrichtung mit externem Resonator. - Google Patents

Halbleiterlaservorrichtung mit externem Resonator.

Info

Publication number
DE3889754D1
DE3889754D1 DE3889754T DE3889754T DE3889754D1 DE 3889754 D1 DE3889754 D1 DE 3889754D1 DE 3889754 T DE3889754 T DE 3889754T DE 3889754 T DE3889754 T DE 3889754T DE 3889754 D1 DE3889754 D1 DE 3889754D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
external resonator
resonator
external
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3889754T
Other languages
English (en)
Other versions
DE3889754T2 (de
Inventor
Hiroshi Hayashi
Shigeki Maei
Osamu Yamamoto
Hidenori Kawanishi
Nobuyuki Miyauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3889754D1 publication Critical patent/DE3889754D1/de
Application granted granted Critical
Publication of DE3889754T2 publication Critical patent/DE3889754T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
DE3889754T 1987-03-19 1988-03-21 Halbleiterlaservorrichtung mit externem Resonator. Expired - Fee Related DE3889754T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62064586A JPS63229890A (ja) 1987-03-19 1987-03-19 外部共振器型半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
DE3889754D1 true DE3889754D1 (de) 1994-07-07
DE3889754T2 DE3889754T2 (de) 1994-10-20

Family

ID=13262498

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3889754T Expired - Fee Related DE3889754T2 (de) 1987-03-19 1988-03-21 Halbleiterlaservorrichtung mit externem Resonator.

Country Status (4)

Country Link
US (1) US4864585A (de)
EP (1) EP0283322B1 (de)
JP (1) JPS63229890A (de)
DE (1) DE3889754T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5258821A (en) * 1990-04-20 1993-11-02 Photon, Inc. Laser beam profiler having a multimode laser diode interferometer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55143042A (en) * 1979-04-25 1980-11-08 Hitachi Ltd Semiconductor device
JPS6043680B2 (ja) * 1979-09-21 1985-09-30 日本電信電話株式会社 温度安定化レ−ザ装置
JPS58111393A (ja) * 1981-12-25 1983-07-02 Hitachi Ltd 半導体レ−ザ装置
JPS58111391A (ja) * 1981-12-25 1983-07-02 Hitachi Ltd 半導体レ−ザ装置
JPS58207689A (ja) * 1982-05-28 1983-12-03 Hitachi Ltd 半導体レ−ザ装置
JPS5925292A (ja) * 1982-07-30 1984-02-09 Fujitsu Ltd 半導体レ−ザ装置
DE3410729A1 (de) * 1984-03-23 1985-09-26 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Stabilisierter halbleiterlaser
JPS60261185A (ja) * 1984-06-08 1985-12-24 Hitachi Ltd 半導体レ−ザの実装方法
JPS63213389A (ja) * 1987-02-27 1988-09-06 Sharp Corp 半導体レ−ザ装置
JP3991393B2 (ja) * 1997-06-11 2007-10-17 住友電気工業株式会社 化合物半導体の製造装置

Also Published As

Publication number Publication date
EP0283322B1 (de) 1994-06-01
EP0283322A3 (en) 1989-03-22
EP0283322A2 (de) 1988-09-21
DE3889754T2 (de) 1994-10-20
US4864585A (en) 1989-09-05
JPS63229890A (ja) 1988-09-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8339 Ceased/non-payment of the annual fee