DE3889754T2 - Halbleiterlaservorrichtung mit externem Resonator. - Google Patents
Halbleiterlaservorrichtung mit externem Resonator.Info
- Publication number
- DE3889754T2 DE3889754T2 DE3889754T DE3889754T DE3889754T2 DE 3889754 T2 DE3889754 T2 DE 3889754T2 DE 3889754 T DE3889754 T DE 3889754T DE 3889754 T DE3889754 T DE 3889754T DE 3889754 T2 DE3889754 T2 DE 3889754T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser device
- external resonator
- resonator
- external
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0654—Single longitudinal mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1039—Details on the cavity length
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62064586A JPS63229890A (ja) | 1987-03-19 | 1987-03-19 | 外部共振器型半導体レ−ザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3889754D1 DE3889754D1 (de) | 1994-07-07 |
DE3889754T2 true DE3889754T2 (de) | 1994-10-20 |
Family
ID=13262498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3889754T Expired - Fee Related DE3889754T2 (de) | 1987-03-19 | 1988-03-21 | Halbleiterlaservorrichtung mit externem Resonator. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4864585A (de) |
EP (1) | EP0283322B1 (de) |
JP (1) | JPS63229890A (de) |
DE (1) | DE3889754T2 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5258821A (en) * | 1990-04-20 | 1993-11-02 | Photon, Inc. | Laser beam profiler having a multimode laser diode interferometer |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55143042A (en) * | 1979-04-25 | 1980-11-08 | Hitachi Ltd | Semiconductor device |
JPS6043680B2 (ja) * | 1979-09-21 | 1985-09-30 | 日本電信電話株式会社 | 温度安定化レ−ザ装置 |
JPS58111391A (ja) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | 半導体レ−ザ装置 |
JPS58111393A (ja) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | 半導体レ−ザ装置 |
JPS58207689A (ja) * | 1982-05-28 | 1983-12-03 | Hitachi Ltd | 半導体レ−ザ装置 |
JPS5925292A (ja) * | 1982-07-30 | 1984-02-09 | Fujitsu Ltd | 半導体レ−ザ装置 |
DE3410729A1 (de) * | 1984-03-23 | 1985-09-26 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Stabilisierter halbleiterlaser |
JPS60261185A (ja) * | 1984-06-08 | 1985-12-24 | Hitachi Ltd | 半導体レ−ザの実装方法 |
JPS63213389A (ja) * | 1987-02-27 | 1988-09-06 | Sharp Corp | 半導体レ−ザ装置 |
JP3991393B2 (ja) * | 1997-06-11 | 2007-10-17 | 住友電気工業株式会社 | 化合物半導体の製造装置 |
-
1987
- 1987-03-19 JP JP62064586A patent/JPS63229890A/ja not_active Withdrawn
-
1988
- 1988-03-18 US US07/169,685 patent/US4864585A/en not_active Expired - Lifetime
- 1988-03-21 DE DE3889754T patent/DE3889754T2/de not_active Expired - Fee Related
- 1988-03-21 EP EP88302452A patent/EP0283322B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0283322A3 (en) | 1989-03-22 |
EP0283322A2 (de) | 1988-09-21 |
JPS63229890A (ja) | 1988-09-26 |
US4864585A (en) | 1989-09-05 |
DE3889754D1 (de) | 1994-07-07 |
EP0283322B1 (de) | 1994-06-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee |