EP0283322A3 - An external cavity type semiconductor laser apparatus - Google Patents
An external cavity type semiconductor laser apparatus Download PDFInfo
- Publication number
- EP0283322A3 EP0283322A3 EP88302452A EP88302452A EP0283322A3 EP 0283322 A3 EP0283322 A3 EP 0283322A3 EP 88302452 A EP88302452 A EP 88302452A EP 88302452 A EP88302452 A EP 88302452A EP 0283322 A3 EP0283322 A3 EP 0283322A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- type semiconductor
- semiconductor laser
- laser apparatus
- external cavity
- cavity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0654—Single longitudinal mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1039—Details on the cavity length
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP64586/87 | 1987-03-19 | ||
JP62064586A JPS63229890A (en) | 1987-03-19 | 1987-03-19 | External cavity type semiconductor laser device |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0283322A2 EP0283322A2 (en) | 1988-09-21 |
EP0283322A3 true EP0283322A3 (en) | 1989-03-22 |
EP0283322B1 EP0283322B1 (en) | 1994-06-01 |
Family
ID=13262498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP88302452A Expired - Lifetime EP0283322B1 (en) | 1987-03-19 | 1988-03-21 | An external cavity type semiconductor laser apparatus |
Country Status (4)
Country | Link |
---|---|
US (1) | US4864585A (en) |
EP (1) | EP0283322B1 (en) |
JP (1) | JPS63229890A (en) |
DE (1) | DE3889754T2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5258821A (en) * | 1990-04-20 | 1993-11-02 | Photon, Inc. | Laser beam profiler having a multimode laser diode interferometer |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55143042A (en) * | 1979-04-25 | 1980-11-08 | Hitachi Ltd | Semiconductor device |
JPS6043680B2 (en) * | 1979-09-21 | 1985-09-30 | 日本電信電話株式会社 | Temperature stabilized laser device |
JPS58111391A (en) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | Semiconductor laser device |
JPS58111393A (en) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | Semiconductor laser device |
JPS58207689A (en) * | 1982-05-28 | 1983-12-03 | Hitachi Ltd | Semiconductor laser apparatus |
JPS5925292A (en) * | 1982-07-30 | 1984-02-09 | Fujitsu Ltd | Semiconductor laser device |
DE3410729A1 (en) * | 1984-03-23 | 1985-09-26 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Stabilised semiconductor laser |
JPS60261185A (en) * | 1984-06-08 | 1985-12-24 | Hitachi Ltd | Mounting method of semiconductor laser |
JPS63213389A (en) * | 1987-02-27 | 1988-09-06 | Sharp Corp | Semiconductor laser device |
JP3991393B2 (en) * | 1997-06-11 | 2007-10-17 | 住友電気工業株式会社 | Compound semiconductor manufacturing equipment |
-
1987
- 1987-03-19 JP JP62064586A patent/JPS63229890A/en not_active Withdrawn
-
1988
- 1988-03-18 US US07/169,685 patent/US4864585A/en not_active Expired - Lifetime
- 1988-03-21 EP EP88302452A patent/EP0283322B1/en not_active Expired - Lifetime
- 1988-03-21 DE DE3889754T patent/DE3889754T2/en not_active Expired - Fee Related
Non-Patent Citations (5)
Title |
---|
APPLIED PHYSICS LETTERS, vol. 47, no. 2, July 1985, pages 71-73, American Institute of Physics, Woodbury, New York, US; J.R. ANDREWS: "Enhanced thermal stability of single longitudinal mode coupled cavity lasers" * |
JOURNAL OF APPLIED PHYSICS, vol. 61, no. 3, 1st February 1987, pages 870-874, American Institute of Physics, New York, NY, US; O. YAMAMOTO et al.: "Stable single-longitudinal-mode operation in visible (AlGa)As semiconductor lasers coupled with a short external cavity" * |
PATENT ABSTRACTS OF JAPAN, vol. 5, no. 103 (E-64)[775], 3rd July 1981; & JP-A-56 045 091 (NIPPON DENSHIN DENWA KOSHA) 24-04-1981 * |
PATENT ABSTRACTS OF JAPAN, vol. 7, no. 218 (E-200)[1363], 28th September 1983; & JP-A-58 111 391 (HITACHI SEISAKUSHO K.K.) 02-07-1983 * |
PATENT ABSTRACTS OF JAPAN, vol. 8, no. 53 (E-231)[1490], 9th March 1984; & JP-A-58 207 689 (HITACHI SEISAKUSHO K.K.) 03-12-1983 * |
Also Published As
Publication number | Publication date |
---|---|
US4864585A (en) | 1989-09-05 |
JPS63229890A (en) | 1988-09-26 |
DE3889754T2 (en) | 1994-10-20 |
EP0283322B1 (en) | 1994-06-01 |
EP0283322A2 (en) | 1988-09-21 |
DE3889754D1 (en) | 1994-07-07 |
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