DE3883929T2 - Nichtflüchtiger Speicher. - Google Patents

Nichtflüchtiger Speicher.

Info

Publication number
DE3883929T2
DE3883929T2 DE88119501T DE3883929T DE3883929T2 DE 3883929 T2 DE3883929 T2 DE 3883929T2 DE 88119501 T DE88119501 T DE 88119501T DE 3883929 T DE3883929 T DE 3883929T DE 3883929 T2 DE3883929 T2 DE 3883929T2
Authority
DE
Germany
Prior art keywords
volatile memory
volatile
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE88119501T
Other languages
English (en)
Other versions
DE3883929D1 (de
Inventor
Akihiro C O Patent Di Yamazaki
Katsuya Kiyohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3883929D1 publication Critical patent/DE3883929D1/de
Publication of DE3883929T2 publication Critical patent/DE3883929T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/70—Arrangements for deflecting ray or beam
    • H01J29/72—Arrangements for deflecting ray or beam along one straight line or along two perpendicular straight lines
    • H01J29/76—Deflecting by magnetic fields only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/70—Arrangements for deflecting ray or beam
DE88119501T 1987-11-24 1988-11-23 Nichtflüchtiger Speicher. Expired - Lifetime DE3883929T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29569587A JPH081759B2 (ja) 1987-11-24 1987-11-24 不揮発性メモリ

Publications (2)

Publication Number Publication Date
DE3883929D1 DE3883929D1 (de) 1993-10-14
DE3883929T2 true DE3883929T2 (de) 1994-01-05

Family

ID=17823969

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88119501T Expired - Lifetime DE3883929T2 (de) 1987-11-24 1988-11-23 Nichtflüchtiger Speicher.

Country Status (7)

Country Link
US (1) US5016218A (de)
EP (1) EP0317984B1 (de)
JP (1) JPH081759B2 (de)
KR (1) KR910007439B1 (de)
DE (1) DE3883929T2 (de)
ES (1) ES2050142T3 (de)
MY (1) MY103797A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3247402B2 (ja) * 1991-07-25 2002-01-15 株式会社東芝 半導体装置及び不揮発性半導体記憶装置
GB9417264D0 (en) * 1994-08-26 1994-10-19 Inmos Ltd Memory device
FR2799045B1 (fr) * 1999-09-29 2002-02-08 St Microelectronics Sa Memoire en circuit integre a acces serie
JP5260180B2 (ja) * 2008-08-20 2013-08-14 ルネサスエレクトロニクス株式会社 半導体記憶装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5775030A (en) * 1980-10-29 1982-05-11 Nippon Shirikonikusu Kk High-dielectric strength semiconductor switch circuit
JPS58114396A (ja) * 1981-12-26 1983-07-07 Toshiba Corp 不揮発性メモリ−
JPS5952497A (ja) * 1982-09-17 1984-03-27 Nec Corp デコ−ダ回路
JPS6079598A (ja) * 1983-10-07 1985-05-07 Hitachi Ltd 半導体記憶装置
JPS59185092A (ja) * 1984-02-29 1984-10-20 Toshiba Corp 電圧切換回路
JPH0746515B2 (ja) * 1984-12-28 1995-05-17 日本電気株式会社 デコ−ダ回路
JPS61172496A (ja) * 1985-01-28 1986-08-04 Toshiba Corp フイ−ルドメモリ装置
JP2504743B2 (ja) * 1985-03-18 1996-06-05 日本電気株式会社 半導体記憶装置
JP2519885B2 (ja) * 1985-04-09 1996-07-31 セイコーエプソン株式会社 Ｃ・ｍｏｓ型電流増幅回路
DE3684351D1 (de) * 1985-04-18 1992-04-23 Nec Corp Programmierbarer festwertspeicher mit reduzierter programmierspeisespannung.
US4769787A (en) * 1985-07-26 1988-09-06 Hitachi, Ltd. Semiconductor memory device
JPS6231094A (ja) * 1985-08-01 1987-02-10 Toshiba Corp 不揮発性半導体記憶装置
JPS6252797A (ja) * 1985-08-30 1987-03-07 Mitsubishi Electric Corp 半導体記憶装置
US4668287A (en) * 1985-09-26 1987-05-26 Westinghouse Electric Corp. Process for producing high purity zirconium and hafnium
JPS62116095A (ja) * 1985-11-15 1987-05-27 Matsushita Electric Ind Co Ltd 色信号記録再生方法

Also Published As

Publication number Publication date
KR890008847A (ko) 1989-07-12
EP0317984A2 (de) 1989-05-31
JPH081759B2 (ja) 1996-01-10
MY103797A (en) 1993-09-30
EP0317984A3 (de) 1991-01-09
JPH01137499A (ja) 1989-05-30
KR910007439B1 (ko) 1991-09-26
EP0317984B1 (de) 1993-09-08
ES2050142T3 (es) 1994-05-16
US5016218A (en) 1991-05-14
DE3883929D1 (de) 1993-10-14

Similar Documents

Publication Publication Date Title
DE3852833T2 (de) Nichtflüchtiger Speicher.
DE3850943T2 (de) Löschbaren programmierbarer Speicher.
DE3885408D1 (de) Nichtflüchtige Speicherzelle.
DE3778065D1 (de) Magnetischer speicher.
DE3684359D1 (de) Nichtfluechtiger elektrisch aenderbarer speicher.
DE3782854D1 (de) Blockmaessig elektrisch loeschbarer speicher.
DE68917792T2 (de) Speicher.
DE3580429D1 (de) Optischer speicher.
DE3576013D1 (de) Nichtfluechtiger halbleiterspeicher.
DE3785509T2 (de) Nichtfluechtige halbleiterspeicheranordnung.
DE3786819D1 (de) Nichtfluechtige halbleiterspeicheranordnung.
DE68923942T2 (de) Nichtflüchtiges Halbleiterspeichersystem.
DE3869158D1 (de) Speicher-leseschaltung.
DE3878370T2 (de) Nichtfluechtige halbleiterspeicheranordnung.
DE3481350D1 (de) Rekonfigurierbarer speicher.
DE69021175T2 (de) Optischer speicher.
DE3686144T2 (de) Nichtfluechtiger halbleiterspeicher.
DE69015667T2 (de) Nichtflüchtiger Halbleiterspeicher.
DE69014821D1 (de) Nichtflüchtige Speicheranordung.
DE3583669D1 (de) Nichtfluechtige halbleiterspeicheranordnung.
DE3874455T2 (de) Nichtfluechtiger halbleiterspeicher.
DE3586493D1 (de) Nichtfluechtige halbleiterspeicheranordnung.
DE3778601D1 (de) Nichtfluechtige halbleiterspeicheranordnung.
DE69014189D1 (de) Speicher mit verbesserter Lesezeit.
DE3883929T2 (de) Nichtflüchtiger Speicher.

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP T

8364 No opposition during term of opposition