JPS5775030A - High-dielectric strength semiconductor switch circuit - Google Patents

High-dielectric strength semiconductor switch circuit

Info

Publication number
JPS5775030A
JPS5775030A JP15077580A JP15077580A JPS5775030A JP S5775030 A JPS5775030 A JP S5775030A JP 15077580 A JP15077580 A JP 15077580A JP 15077580 A JP15077580 A JP 15077580A JP S5775030 A JPS5775030 A JP S5775030A
Authority
JP
Japan
Prior art keywords
fets
turned
dielectric strength
switch circuit
semiconductor switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15077580A
Other languages
Japanese (ja)
Inventor
Kikuo Tominaga
Hiroyuki Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIHON SHIRIKONIKUSU KK
NIPPON SHIRIKONIKUSU KK
Original Assignee
NIHON SHIRIKONIKUSU KK
NIPPON SHIRIKONIKUSU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIHON SHIRIKONIKUSU KK, NIPPON SHIRIKONIKUSU KK filed Critical NIHON SHIRIKONIKUSU KK
Priority to JP15077580A priority Critical patent/JPS5775030A/en
Publication of JPS5775030A publication Critical patent/JPS5775030A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches

Landscapes

  • Electronic Switches (AREA)

Abstract

PURPOSE:To enhance the dielectric strength of a switch circuit, by providing a switching element between the output of thes witch circuit, which is connected between a power source and the earth, and a load. CONSTITUTION:When a signal is not applied to a terminal T1, an MOSFET Q1 is turned off, and the voltage between the source and the gate of an MOSFET Q2 is zero approximately, and therefore, the FET Q2 is turned off. However, the junction between the source and the drain of the FET Q2 is forward bias, and a capacitor Cc is charged up to a power source voltage VDD. When a signal is applied to the terminal T1, FETs Q1 and Q2 are turned on, and the potential at a point C jumps up to a maximum 2VDD by storage energy of resonance circuit C0 and L0, but only the voltage VDD at most is applied between drains and sources of FETs Q1 and Q2, thus preventing the breakdown of FETs.
JP15077580A 1980-10-29 1980-10-29 High-dielectric strength semiconductor switch circuit Pending JPS5775030A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15077580A JPS5775030A (en) 1980-10-29 1980-10-29 High-dielectric strength semiconductor switch circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15077580A JPS5775030A (en) 1980-10-29 1980-10-29 High-dielectric strength semiconductor switch circuit

Publications (1)

Publication Number Publication Date
JPS5775030A true JPS5775030A (en) 1982-05-11

Family

ID=15504145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15077580A Pending JPS5775030A (en) 1980-10-29 1980-10-29 High-dielectric strength semiconductor switch circuit

Country Status (1)

Country Link
JP (1) JPS5775030A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01137499A (en) * 1987-11-24 1989-05-30 Toshiba Corp Non-volatile memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01137499A (en) * 1987-11-24 1989-05-30 Toshiba Corp Non-volatile memory

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