DE3872673T2 - Verfahren zum testen von zellen von elektrisch programmierbaren speichern und entsprechende integrierte schaltung. - Google Patents
Verfahren zum testen von zellen von elektrisch programmierbaren speichern und entsprechende integrierte schaltung.Info
- Publication number
- DE3872673T2 DE3872673T2 DE8888402905T DE3872673T DE3872673T2 DE 3872673 T2 DE3872673 T2 DE 3872673T2 DE 8888402905 T DE8888402905 T DE 8888402905T DE 3872673 T DE3872673 T DE 3872673T DE 3872673 T2 DE3872673 T2 DE 3872673T2
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuit
- electrically programmable
- programmable storage
- corresponding integrated
- testing cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5006—Current
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8716236A FR2623653B1 (fr) | 1987-11-24 | 1987-11-24 | Procede de test de cellules de memoire electriquement programmable et circuit integre correspondant |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3872673D1 DE3872673D1 (de) | 1992-08-13 |
DE3872673T2 true DE3872673T2 (de) | 1992-12-03 |
Family
ID=9357084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888402905T Expired - Fee Related DE3872673T2 (de) | 1987-11-24 | 1988-11-18 | Verfahren zum testen von zellen von elektrisch programmierbaren speichern und entsprechende integrierte schaltung. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4958324A (de) |
EP (1) | EP0318363B1 (de) |
JP (1) | JP2928794B2 (de) |
KR (1) | KR890008851A (de) |
DE (1) | DE3872673T2 (de) |
FR (1) | FR2623653B1 (de) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5208530A (en) * | 1986-09-19 | 1993-05-04 | Actel Corporation | Testability architecture and techniques for programmable interconnect architecture |
FR2629248B1 (fr) * | 1988-03-25 | 1992-04-24 | Sgs Thomson Microelectronics | Procede de test de memoire a programmation unique et memoire correspondante |
US5109353A (en) * | 1988-12-02 | 1992-04-28 | Quickturn Systems, Incorporated | Apparatus for emulation of electronic hardware system |
US5329470A (en) * | 1988-12-02 | 1994-07-12 | Quickturn Systems, Inc. | Reconfigurable hardware emulation system |
KR910007434B1 (ko) * | 1988-12-15 | 1991-09-26 | 삼성전자 주식회사 | 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치 및 그 소거 및 프로그램 방법 |
US5195099A (en) * | 1989-04-11 | 1993-03-16 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device having improved error correcting circuit |
US5353243A (en) | 1989-05-31 | 1994-10-04 | Synopsys Inc. | Hardware modeling system and method of use |
US5369593A (en) | 1989-05-31 | 1994-11-29 | Synopsys Inc. | System for and method of connecting a hardware modeling element to a hardware modeling system |
FR2663774B1 (fr) * | 1990-06-21 | 1992-09-25 | Sgs Thomson Microelectronics | Circuit de test de cellules memoires electriquement programmables. |
US5528600A (en) * | 1991-01-28 | 1996-06-18 | Actel Corporation | Testability circuits for logic arrays |
JP3282188B2 (ja) * | 1991-06-27 | 2002-05-13 | 日本電気株式会社 | 半導体メモリ装置 |
FR2683664A1 (fr) * | 1991-11-13 | 1993-05-14 | Sgs Thomson Microelectronics | Memoire integree electriquement programmable a un seuil transistor. |
US5235549A (en) * | 1991-12-23 | 1993-08-10 | Intel Corporation | Semiconductor device with apparatus for performing electrical tests on single memory cells |
US5255230A (en) * | 1991-12-31 | 1993-10-19 | Intel Corporation | Method and apparatus for testing the continuity of static random access memory cells |
JPH0612900A (ja) * | 1992-06-29 | 1994-01-21 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
DE69326329T2 (de) * | 1993-06-28 | 2000-04-13 | St Microelectronics Srl | Speicherzellen-Stromleseverfahren in Mikrosteuergerät |
JPH0757472A (ja) * | 1993-08-13 | 1995-03-03 | Nec Corp | 半導体集積回路装置 |
FR2714202B1 (fr) * | 1993-12-22 | 1996-01-12 | Sgs Thomson Microelectronics | Mémoire en circuit intégré à temps de lecture amélioré. |
US5680583A (en) | 1994-02-16 | 1997-10-21 | Arkos Design, Inc. | Method and apparatus for a trace buffer in an emulation system |
JPH08167296A (ja) * | 1994-12-08 | 1996-06-25 | Nippon Motorola Ltd | 半導体記憶装置 |
US5559745A (en) * | 1995-09-15 | 1996-09-24 | Intel Corporation | Static random access memory SRAM having weak write test circuit |
US5870407A (en) * | 1996-05-24 | 1999-02-09 | Advanced Micro Devices, Inc. | Method of screening memory cells at room temperature that would be rejected during hot temperature programming tests |
US5930185A (en) * | 1997-09-26 | 1999-07-27 | Advanced Micro Devices, Inc. | Data retention test for static memory cell |
US5936892A (en) * | 1996-09-30 | 1999-08-10 | Advanced Micro Devices, Inc. | Memory cell DC characterization apparatus and method |
US5920517A (en) * | 1996-09-30 | 1999-07-06 | Advanced Micro Devices, Inc. | Memory array test and characterization using isolated memory cell power supply |
US5923601A (en) * | 1996-09-30 | 1999-07-13 | Advanced Micro Devices, Inc. | Memory array sense amplifier test and characterization |
US5841967A (en) * | 1996-10-17 | 1998-11-24 | Quickturn Design Systems, Inc. | Method and apparatus for design verification using emulation and simulation |
FR2758645B1 (fr) * | 1997-01-22 | 2001-12-14 | Sgs Thomson Microelectronics | Dispositif et procede de programmation d'une memoire |
US5909049A (en) * | 1997-02-11 | 1999-06-01 | Actel Corporation | Antifuse programmed PROM cell |
US5960191A (en) | 1997-05-30 | 1999-09-28 | Quickturn Design Systems, Inc. | Emulation system with time-multiplexed interconnect |
US5970240A (en) | 1997-06-25 | 1999-10-19 | Quickturn Design Systems, Inc. | Method and apparatus for configurable memory emulation |
US6256241B1 (en) | 2000-03-30 | 2001-07-03 | Intel Corporation | Short write test mode for testing static memory cells |
KR100542695B1 (ko) * | 2003-11-13 | 2006-01-11 | 주식회사 하이닉스반도체 | 반도체 소자의 테스트 모드 회로 |
JP4848126B2 (ja) * | 2004-11-04 | 2011-12-28 | オンセミコンダクター・トレーディング・リミテッド | マイクロコンピュータ、マイクロコンピュータにおける不揮発性メモリのデータ保護方法 |
US7555424B2 (en) | 2006-03-16 | 2009-06-30 | Quickturn Design Systems, Inc. | Method and apparatus for rewinding emulated memory circuits |
US7388796B2 (en) * | 2006-06-29 | 2008-06-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for testing memory under worse-than-normal conditions |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4228528B2 (en) * | 1979-02-09 | 1992-10-06 | Memory with redundant rows and columns | |
US4253059A (en) * | 1979-05-14 | 1981-02-24 | Fairchild Camera & Instrument Corp. | EPROM Reliability test circuit |
JPS5928560Y2 (ja) * | 1979-11-13 | 1984-08-17 | 富士通株式会社 | 冗長ビットを有する記憶装置 |
JPS6035760B2 (ja) * | 1980-12-18 | 1985-08-16 | 富士通株式会社 | 半導体記憶装置 |
JPS5853775A (ja) * | 1981-09-26 | 1983-03-30 | Fujitsu Ltd | Icメモリ試験方法 |
US4519076A (en) * | 1981-12-28 | 1985-05-21 | National Semiconductor Corporation | Memory core testing system |
JPS5922295A (ja) * | 1982-06-30 | 1984-02-04 | Fujitsu Ltd | 半導体記憶装置 |
US4502140A (en) * | 1983-07-25 | 1985-02-26 | Mostek Corporation | GO/NO GO margin test circuit for semiconductor memory |
US4609998A (en) * | 1983-12-15 | 1986-09-02 | Monolithic Memories, Inc. | High conductance circuit for programmable integrated circuit |
JPS60201598A (ja) * | 1984-03-23 | 1985-10-12 | Fujitsu Ltd | 半導体集積回路 |
US4670878A (en) * | 1984-08-14 | 1987-06-02 | Texas Instruments Incorporated | Column shift circuitry for high speed testing of semiconductor memory devices |
JPS61178795A (ja) * | 1985-02-01 | 1986-08-11 | Toshiba Corp | ダイナミツク型半導体記憶装置 |
US4720817A (en) * | 1985-02-26 | 1988-01-19 | Texas Instruments Incorporated | Fuse selection of predecoder output |
JPS61292755A (ja) * | 1985-06-20 | 1986-12-23 | Fujitsu Ltd | 半導体集積回路 |
EP0214508B1 (de) * | 1985-09-11 | 1991-09-25 | Siemens Aktiengesellschaft | Integrierter Halbleiterspeicher |
US4734885A (en) * | 1985-10-17 | 1988-03-29 | Harris Corporation | Programming arrangement for programmable devices |
JPS62114200A (ja) * | 1985-11-13 | 1987-05-25 | Mitsubishi Electric Corp | 半導体メモリ装置 |
JPS62121979A (ja) * | 1985-11-22 | 1987-06-03 | Mitsubishi Electric Corp | 集積回路メモリ |
IT1186430B (it) * | 1985-12-12 | 1987-11-26 | Sgs Microelettrica Spa | Rpocedimento per la realizzazione di memorie a sola lettura in tecnologia nmos programmate mediante impiantazione ionica e memoria a sola lettura ottenuta mediante tale procedimento |
JP2513462B2 (ja) * | 1986-03-26 | 1996-07-03 | 株式会社日立製作所 | マイクロ・コンピユ−タ |
US4714839A (en) * | 1986-03-27 | 1987-12-22 | Advanced Micro Devices, Inc. | Control circuit for disabling or enabling the provision of redundancy |
US4731760A (en) * | 1986-05-05 | 1988-03-15 | Motorola, Inc. | On-chip test circuitry for an ECL PROM |
JPS63155494A (ja) * | 1986-12-19 | 1988-06-28 | Fujitsu Ltd | 擬似スタテイツクメモリ装置 |
-
1987
- 1987-11-24 FR FR8716236A patent/FR2623653B1/fr not_active Expired - Lifetime
-
1988
- 1988-11-09 US US07/269,169 patent/US4958324A/en not_active Expired - Lifetime
- 1988-11-18 DE DE8888402905T patent/DE3872673T2/de not_active Expired - Fee Related
- 1988-11-18 EP EP88402905A patent/EP0318363B1/de not_active Expired - Lifetime
- 1988-11-24 KR KR1019880015652A patent/KR890008851A/ko not_active Application Discontinuation
- 1988-11-24 JP JP29714288A patent/JP2928794B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH01171200A (ja) | 1989-07-06 |
US4958324A (en) | 1990-09-18 |
FR2623653A1 (fr) | 1989-05-26 |
DE3872673D1 (de) | 1992-08-13 |
KR890008851A (ko) | 1989-07-12 |
JP2928794B2 (ja) | 1999-08-03 |
EP0318363A1 (de) | 1989-05-31 |
FR2623653B1 (fr) | 1992-10-23 |
EP0318363B1 (de) | 1992-07-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |