DE3851475D1 - Integrierte Schaltung mit vergrabene Dioden enthaltender Schützvorrichtung sowie zugehöriges Verfahren zur Hertellung. - Google Patents
Integrierte Schaltung mit vergrabene Dioden enthaltender Schützvorrichtung sowie zugehöriges Verfahren zur Hertellung.Info
- Publication number
- DE3851475D1 DE3851475D1 DE3851475T DE3851475T DE3851475D1 DE 3851475 D1 DE3851475 D1 DE 3851475D1 DE 3851475 T DE3851475 T DE 3851475T DE 3851475 T DE3851475 T DE 3851475T DE 3851475 D1 DE3851475 D1 DE 3851475D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- integrated circuit
- protective device
- device containing
- associated method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000001681 protective effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08126—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transitor switches
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/065,450 US4736271A (en) | 1987-06-23 | 1987-06-23 | Protection device utilizing one or more subsurface diodes and associated method of manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3851475D1 true DE3851475D1 (de) | 1994-10-20 |
DE3851475T2 DE3851475T2 (de) | 1995-04-13 |
Family
ID=22062791
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3851475T Expired - Fee Related DE3851475T2 (de) | 1987-06-23 | 1988-06-17 | Integrierte Schaltung mit vergrabene Dioden enthaltender Schützvorrichtung sowie zugehöriges Verfahren zur Hertellung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4736271A (de) |
EP (1) | EP0296675B1 (de) |
JP (1) | JPH0732233B2 (de) |
KR (1) | KR970004453B1 (de) |
DE (1) | DE3851475T2 (de) |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06104394B2 (ja) * | 1986-06-11 | 1994-12-21 | 株式会社東芝 | 携帯可能記憶媒体 |
JPH0693497B2 (ja) * | 1986-07-30 | 1994-11-16 | 日本電気株式会社 | 相補型mis集積回路 |
IT1215131B (it) * | 1986-12-03 | 1990-01-31 | Sgs Microelettronica Spa | Protezione dei circuiti integrati contro scariche elettrostatiche |
JPH0758734B2 (ja) * | 1987-02-23 | 1995-06-21 | 株式会社東芝 | 絶縁ゲ−ト型セミカスタム集積回路 |
JPH0748652B2 (ja) * | 1987-07-23 | 1995-05-24 | 三菱電機株式会社 | 半導体回路装置の入力保護装置 |
WO1989007334A1 (en) * | 1988-02-02 | 1989-08-10 | Analog Devices, Inc. | Ic with means for reducing esd damage |
US5182621A (en) * | 1988-06-14 | 1993-01-26 | Nec Corporation | Input protection circuit for analog/digital converting semiconductor |
JPH02113623A (ja) * | 1988-10-21 | 1990-04-25 | Sharp Corp | 集積回路の静電気保護回路 |
US4990802A (en) * | 1988-11-22 | 1991-02-05 | At&T Bell Laboratories | ESD protection for output buffers |
US5189588A (en) * | 1989-03-15 | 1993-02-23 | Matsushita Electric Industrial Co., Ltd. | Surge protection apparatus |
US5200876A (en) * | 1989-04-10 | 1993-04-06 | Matsushita Electric Industrial Co., Ltd. | Electrostatic breakdown protection circuit |
US5019002A (en) * | 1989-07-12 | 1991-05-28 | Honeywell, Inc. | Method of manufacturing flat panel backplanes including electrostatic discharge prevention and displays made thereby |
US5124877A (en) * | 1989-07-18 | 1992-06-23 | Gazelle Microcircuits, Inc. | Structure for providing electrostatic discharge protection |
US5032742A (en) * | 1989-07-28 | 1991-07-16 | Dallas Semiconductor Corporation | ESD circuit for input which exceeds power supplies in normal operation |
WO1991002408A1 (en) * | 1989-07-28 | 1991-02-21 | Dallas Semiconductor Corporation | Line-powered integrated circuit transceiver |
JP2542706B2 (ja) * | 1989-10-05 | 1996-10-09 | 株式会社東芝 | ダイナミックram |
IT1237666B (it) * | 1989-10-31 | 1993-06-15 | Sgs Thomson Microelectronics | Processo per la fabbricazione di un componente limitatore della tensione di programmazione e stabilizzatore di tensione incorporato inun dispositivo elettrico con celle di memoria eeprom |
US5045733A (en) * | 1989-11-28 | 1991-09-03 | Thomson Consumer Electronics, Inc. | Switching apparatus with cascaded switch sections |
US5124578A (en) * | 1990-10-01 | 1992-06-23 | Rockwell International Corporation | Receiver designed with large output drive and having unique input protection circuit |
US5117129A (en) * | 1990-10-16 | 1992-05-26 | International Business Machines Corporation | Cmos off chip driver for fault tolerant cold sparing |
US5138413A (en) * | 1990-10-22 | 1992-08-11 | Harris Corporation | Piso electrostatic discharge protection device |
US5341114A (en) * | 1990-11-02 | 1994-08-23 | Ail Systems, Inc. | Integrated limiter and amplifying devices |
US5359211A (en) * | 1991-07-18 | 1994-10-25 | Harris Corporation | High voltage protection using SCRs |
JP2748747B2 (ja) * | 1991-10-22 | 1998-05-13 | 株式会社デンソー | 電源電圧補償装置 |
US5276582A (en) * | 1992-08-12 | 1994-01-04 | National Semiconductor Corporation | ESD protection using npn bipolar transistor |
GB2273831B (en) * | 1992-12-24 | 1997-03-26 | Motorola Semiconducteurs | Voltage protection circuit |
JP2589938B2 (ja) * | 1993-10-04 | 1997-03-12 | 日本モトローラ株式会社 | 半導体集積回路装置の静電破壊保護回路 |
EP0606667A1 (de) * | 1993-01-13 | 1994-07-20 | Koninklijke Philips Electronics N.V. | Halbleiterbauelement mit einer integrierten Schaltung mit Überspannungsschutz |
DE69326543T2 (de) * | 1993-04-28 | 2000-01-05 | Cons Ric Microelettronica | Monolithisch integrierte Struktur einer elektronischen Vorrichtung mit einer bestimmten unidirektionalen Konduktionsschwellenspannung |
EP0657933B1 (de) * | 1993-12-13 | 2000-06-28 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Integrierte aktive Klammerungsstruktur für den Schutz von Leistungshalbleiterbauelementen gegen Überspannungen |
CA2115230A1 (en) * | 1994-02-08 | 1995-08-09 | Jonathan H. Orchard-Webb | Esd protection circuit |
FR2717308B1 (fr) * | 1994-03-14 | 1996-07-26 | Sgs Thomson Microelectronics | Dispositif de protection contre des surtensions dans des circuits intégrés. |
US5530612A (en) * | 1994-03-28 | 1996-06-25 | Intel Corporation | Electrostatic discharge protection circuits using biased and terminated PNP transistor chains |
US5597758A (en) * | 1994-08-01 | 1997-01-28 | Motorola, Inc. | Method for forming an electrostatic discharge protection device |
JPH08139528A (ja) * | 1994-09-14 | 1996-05-31 | Oki Electric Ind Co Ltd | トランジスタ保護回路 |
EP0740344B1 (de) * | 1995-04-24 | 2002-07-24 | Conexant Systems, Inc. | Verfahren und Apparat zum Koppeln verschiedener, unabhängiger on-Chip-Vdd-Busse an eine ESD-Klemme |
US5656967A (en) * | 1995-08-07 | 1997-08-12 | Micron Technology, Inc. | Two-stage fusible electrostatic discharge protection circuit |
US5706163A (en) * | 1995-11-28 | 1998-01-06 | California Micro Devices Corporation | ESD-protected thin film capacitor structures |
US5708289A (en) * | 1996-02-29 | 1998-01-13 | Sgs-Thomson Microelectronics, Inc. | Pad protection diode structure |
US5719737A (en) * | 1996-03-21 | 1998-02-17 | Intel Corporation | Voltage-tolerant electrostatic discharge protection device for integrated circuit power supplies |
US6064093A (en) * | 1996-03-29 | 2000-05-16 | Citizen Watch Co., Ltd. | Protection circuit with clamping feature for semiconductor device |
US5875089A (en) * | 1996-04-22 | 1999-02-23 | Mitsubishi Denki Kabushiki Kaisha | Input protection circuit device |
US6147564A (en) * | 1996-12-04 | 2000-11-14 | Seiko Epson Corporation | Oscillation circuit having electrostatic protective circuit |
JP3536561B2 (ja) * | 1996-12-04 | 2004-06-14 | セイコーエプソン株式会社 | 発振回路、電子回路、これらを備えた半導体装置、時計および電子機器 |
US6025746A (en) * | 1996-12-23 | 2000-02-15 | Stmicroelectronics, Inc. | ESD protection circuits |
US6014052A (en) * | 1997-09-29 | 2000-01-11 | Lsi Logic Corporation | Implementation of serial fusible links |
GB2334633B (en) * | 1998-02-21 | 2002-09-25 | Mitel Corp | Low leakage electrostatic discharge protection system |
ITMI991387A1 (it) * | 1999-06-22 | 2000-12-22 | St Microelectronics Srl | Struttura circuitale e relativo metodo di inhibit compatibile a massaper circuiti integrati su un substrato svincolato dal potenziale di ma |
US6777996B2 (en) * | 2000-02-09 | 2004-08-17 | Raytheon Company | Radio frequency clamping circuit |
DE10241086B4 (de) * | 2001-09-06 | 2016-02-18 | Fuji Electric Co., Ltd | Zusammengesetztes integriertes Halbleiterbauteil |
US7948725B2 (en) * | 2001-09-06 | 2011-05-24 | Fuji Electric Systems Co., Ltd. | Composite integrated semiconductor device |
US7384854B2 (en) * | 2002-03-08 | 2008-06-10 | International Business Machines Corporation | Method of forming low capacitance ESD robust diodes |
US6683334B2 (en) * | 2002-03-12 | 2004-01-27 | Microsemi Corporation | Compound semiconductor protection device for low voltage and high speed data lines |
JP2004050637A (ja) * | 2002-07-19 | 2004-02-19 | Canon Inc | インクジェットヘッド用基板、インクジェットヘッド及び該インクジェットヘッドを備えたインクジェット記録装置 |
US7705349B2 (en) * | 2002-08-29 | 2010-04-27 | Micron Technology, Inc. | Test inserts and interconnects with electrostatic discharge structures |
US7250668B2 (en) * | 2005-01-20 | 2007-07-31 | Diodes, Inc. | Integrated circuit including power diode |
DE102005019305B4 (de) | 2005-04-26 | 2010-04-22 | Infineon Technologies Ag | ESD-Schutzstruktur mit Diodenreihenschaltung und Halbleiterschaltung mit derselben |
US7700977B2 (en) * | 2007-06-21 | 2010-04-20 | Intersil Americas Inc. | Integrated circuit with a subsurface diode |
US8164154B1 (en) | 2010-12-17 | 2012-04-24 | Aram Tanielian | Low profile Schottky barrier diode for solar cells and solar panels and method of fabrication thereof |
US9012997B2 (en) | 2012-10-26 | 2015-04-21 | International Business Machines Corporation | Semiconductor device including ESD protection device |
JP2017216325A (ja) * | 2016-05-31 | 2017-12-07 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN106449634B (zh) * | 2016-09-23 | 2019-06-14 | 矽力杰半导体技术(杭州)有限公司 | 瞬态电压抑制器及其制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3673428A (en) * | 1970-09-18 | 1972-06-27 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
US3967295A (en) * | 1975-04-03 | 1976-06-29 | Rca Corporation | Input transient protection for integrated circuit element |
US4136349A (en) * | 1977-05-27 | 1979-01-23 | Analog Devices, Inc. | Ic chip with buried zener diode |
US4602267A (en) * | 1981-02-17 | 1986-07-22 | Fujitsu Limited | Protection element for semiconductor device |
JPS6066049U (ja) * | 1983-10-12 | 1985-05-10 | 日本電気株式会社 | C−mos型電界効果トランジスタ |
US4605980A (en) * | 1984-03-02 | 1986-08-12 | Zilog, Inc. | Integrated circuit high voltage protection |
JPS61242060A (ja) * | 1985-04-19 | 1986-10-28 | Matsushita Electronics Corp | 半導体集積回路 |
US4651178A (en) * | 1985-05-31 | 1987-03-17 | Rca Corporation | Dual inverse zener diode with buried junctions |
-
1987
- 1987-06-23 US US07/065,450 patent/US4736271A/en not_active Expired - Lifetime
-
1988
- 1988-06-17 EP EP88201245A patent/EP0296675B1/de not_active Expired - Lifetime
- 1988-06-17 DE DE3851475T patent/DE3851475T2/de not_active Expired - Fee Related
- 1988-06-20 JP JP63152080A patent/JPH0732233B2/ja not_active Expired - Lifetime
- 1988-06-22 KR KR1019880007520A patent/KR970004453B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0296675A2 (de) | 1988-12-28 |
EP0296675A3 (en) | 1989-12-06 |
KR970004453B1 (ko) | 1997-03-27 |
JPH0732233B2 (ja) | 1995-04-10 |
JPS6433957A (en) | 1989-02-03 |
DE3851475T2 (de) | 1995-04-13 |
US4736271A (en) | 1988-04-05 |
EP0296675B1 (de) | 1994-09-14 |
KR890001188A (ko) | 1989-03-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
8339 | Ceased/non-payment of the annual fee |